HAL835PUT [TDK]
线性霍尔传感器;
| 型号： | HAL835PUT |
| 厂家： | 
TDK ELECTRONICS |
| 描述： | 线性霍尔传感器 传感器 |
| 文件： | 总54页 (文件大小：605K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hardware
Documentation
Data Sheet
HAL® 83x
Robust Multi-Purpose Programmable
Linear Hall-Effect Sensor Family
Edition March 21, 2018
DSH000169_003EN
DATA SHEET
HAL 83x
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document are believed to be accurate and
reliable. The software and proprietary information contained therein may be protected
by copyright, patent, trademark and/or other intellectual property rights of
TDK-Micronas. All rights not expressly granted remain reserved by TDK-Micronas.
TDK-Micronas assumes no liability for errors and gives no warranty representation or
guarantee regarding the suitability of its products for any particular purpose due to
these specifications.
By this publication, TDK-Micronas does not assume responsibility for patent infringe-
ments or other rights of third parties which may result from its use. Commercial condi-
tions, product availability and delivery are exclusively subject to the respective order
confirmation.
Any information and data which may be provided in the document can and do vary in
different applications, and actual performance may vary over time.
All operating parameters must be validated for each customer application by customers’
technical experts. Any new issue of this document invalidates previous issues.
TDK-Micronas reserves the right to review this document and to make changes to the
document’s content at any time without obligation to notify any person or entity of such
revision or changes. For further advice please contact us directly.
Do not use our products in life-supporting systems, military, aviation, or aerospace
applications! Unless explicitly agreed to otherwise in writing between the parties,
TDK-Micronas’ products are not designed, intended or authorized for use as compo-
nents in systems intended for surgical implants into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the
product could create a situation where personal injury or death could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval sys-
tem or transmitted without the express written consent of TDK-Micronas.
TDK-Micronas Trademarks
– HAL
TDK-Micronas Patents
EP0 953 848, EP 1 039 357, EP 1 575 013
Third-Party Trademarks
All other brand and product names or company names may be trademarks of their
respective companies.
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
Contents
Page
Section
Title
5
6
6
6
1.
Introduction
Applications
1.1.
1.2.
1.2.1.
General Features
Device-specific features of HAL835
7
2.
Ordering Information
7
2.1.
Device-Specific Ordering Codes
8
8
11
12
20
20
3.
Functional Description
General Function
A/D Converter
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
3.1.
3.2.
3.3.
3.4.
3.4.1.
23
23
27
27
27
28
29
29
30
32
33
33
33
35
36
36
36
37
37
37
4.
4.1.
Specifications
Outline Dimensions
4.2.
4.3.
4.4.
Soldering, Welding and Assembly
Pin Connections and Short Descriptions
Dimensions of Sensitive Area
Absolute Maximum Ratings
Storage and Shelf Life
4.5.
4.6.
4.7.
4.8.
Recommended Operating Conditions
Characteristics
Additional Information
4.8.1.
4.8.2.
4.8.3.
4.8.4.
4.8.5.
4.9.
4.9.1.
4.9.2.
4.9.3.
4.9.4.
4.9.5.
PWM Output (HAL835 only)
TO92UT Packages
Definition of sensitivity error ES
Power-On Operation
Diagnostics and Safety Features
Overvoltage and Undervoltage Detection
Open-Circuit Detection
Overtemperature and Short-Circuit Protection
EEPROM Redundancy
ADC Diagnostic
38
38
39
40
42
42
5.
Application Notes
5.1.
5.2.
5.3.
5.4.
5.5.
Application Circuit (for analog output mode only)
Use of two HAL83x in Parallel (for analog output mode only)
Temperature Compensation
Ambient Temperature
EMC and ESD
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DATA SHEET
HAL 83x
Contents
Page
Section
Title
43
43
43
46
47
48
51
6.
Programming
6.1.
6.2.
6.3.
6.4.
6.5.
6.6.
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
53
7.
Data Sheet History
TDK-Micronas GmbH
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DATA SHEET
HAL 83x
Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family
Release Note:
Revision bars indicate significant changes to the previous edition.
1. Introduction
The HAL83x is a family of programmable linear Hall sensors from TDK-Micronas. This
robust multipurpose sensors can replace the HAL 805, HAL 815, HAL 825, and
HAL810. HAL 83x offers better quality, extended functionality and performance com-
pared to the first generation devices. This family consists of two members: the HAL830
and the HAL835. HAL835 is the device with the full feature set and maximum perfor-
mance compared with the HAL830.
The HAL83x is an universal magnetic field sensor with linear output based on the Hall
effect. The IC can be used for angle or distance measurements when combined with a
rotating or moving magnet. The major characteristics like magnetic field range, sensitivity,
output quiescent voltage (output voltage at B = 0 mT), and output voltage range are pro-
grammable in a non-volatile memory. The sensor has a ratiometric output characteristic,
which means that the output voltage is proportional to the magnetic flux and the supply
voltage. It is possible to program several devices connected to the same supply and
ground line.
The HAL83x features a temperature-compensated Hall plate with spinning-current off-
set compensation, an A/D converter, digital signal processing, a D/A converter with out-
put driver, an EEPROM memory with redundancy and lock function for the calibration
data, an EEPROM for customer serial number, a serial interface for programming the
EEPROM, and protection devices at all pins.
The HAL83x is programmable by modulating the supply voltage. No additional pro-
gramming pin is needed. The easy programmability allows a 2-point calibration by
adjusting the output voltage directly to the input signal (like mechanical angle, distance,
or current). Individual adjustment of each sensor during the customer’s manufacturing
process is possible. With this calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly.
In addition, the temperature compensation of the Hall IC can be fit to common magnetic
materials by programming first and second order temperature coefficients of the Hall sen-
sor sensitivity. This enables operation over the full temperature range with high accuracy.
The calculation of the individual sensor characteristics and the programming of the
EEPROM memory can easily be done with a PC and the application kit from
TDK-Micronas.
The sensor is designed for hostile industrial and automotive applications and operates
with typically 5 V supply voltage in the ambient temperature range from 40 °C up to
160 °C. The HAL83x is available in the very small leaded package TO92UT-1/-2 and is
AECQ 100 qualified.
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DATA SHEET
HAL 83x
1.1. Applications
Due to the sensor’s versatile programming characteristics and low temperature drift, the
HAL 83x is the optimal system solution for applications such as:
– Pedal, turbo-charger, throttle and EGR systems
– Distance measurements
1.2. General Features
– high-precision linear Hall-effect sensor family with 12 bit ratiometric analog output and
digital signal processing
– multiple programmable magnetic characteristics in a non-volatile memory (EEPROM)
with redundancy and lock function
– operates from TJ = 40 °C up to 170 °C
– operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V
– operates with static magnetic fields and dynamic magnetic fields up to 2 kHz
– programmable magnetic field range from 30 mT up to 150 mT
– open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down
resistor, overvoltage and undervoltage detection
– for programming an individual sensor within several sensors in parallel to the same
supply voltage, a selection can be done via the output pin
– temperature characteristics are programmable for matching common magnetic materials
– programmable clamping function
– programming via modulation of the supply voltage
– overvoltage and reverse-voltage protection at all pins
– magnetic characteristics extremely robust against mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
1.2.1. Device-specific features of HAL835
– very low offset (0.2 %VSUP) and sensitivity (1 %) drift over temperature
– selectable PWM output with 11 bit resolution and 8 ms period
– 14 bit multiplex analog output
– 15 mT magnetic range
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DATA SHEET
HAL 83x
2. Ordering Information
A Micronas device is available in a variety of delivery forms. They are distinguished by a
specific ordering code:
XXXNNNNPA-T-C-P-Q-SP
Further Code Elements
Temperature Range
Package
Product Type
Product Group
Fig. 2–1: Ordering Code Principle
For a detailed information, please refer to the brochure:
“Micronas Sensors and Controllers: Ordering Codes, Packaging, Handling”.
2.1. Device-Specific Ordering Codes
The HAL 83x is available in the following package and temperature variants.
Table 2–1: Available packages
Package Code (PA)
Package Type
UT
TO92UT-1/2
Table 2–2: Available temperature ranges
Temperature Code (T) Temperature Range
A
T = 40 °C to 170 °C
J
The relationship between ambient temperature (TA) and junction temperature (TJ) is
explained in Section 5.4. on page 42.
For available variants for Configuration (C), Packaging (P), Quantity (Q), and Special
Procedure (SP) please contact TDK-Micronas.
Table 2–3: Available ordering codes and corresponding package marking
Available Ordering Codes
HAL830UT-A-[C-P-Q-SP]
HAL835UT-A-[C-P-Q-SP]
Package Marking
830A
835A
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DATA SHEET
HAL 83x
3. Functional Description
3.1. General Function
The HAL83x is a programmable linear Hall-Effect sensor which provides an output sig-
nal proportional to the magnetic flux through the Hall plate and proportional to the sup-
ply voltage (ratiometric behavior) as long as the analog output mode is selected. When
the PWM output mode is selected, the PWM signal is not ratiometric to the supply volt-
age (for HAL 835 only).
The external magnetic field component perpendicular to the branded side of the package
generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This
voltage is converted to a digital value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers and converted to an output sig-
nal. The function and the parameters for the DSP are explained in Section 3.2. on page 11.
The setting of the LOCK register disables the programming of the EEPROM memory for
all time. It also disables the reading of the memory. This register cannot be reset.
As long as the LOCK register is not set, the output characteristic can be adjusted by
programming the EEPROM registers. The IC is addressed by modulating the supply
voltage (see Fig. 3–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor
generates an normal output signal. After detecting a command, the sensor reads or
writes the memory and answers with a digital signal on the output pin (see also applica-
tion note “HAL 8xy, HAL 100x Programmer Board”). The output switches from analog to
digital during the communication. Several sensors in parallel to the same supply and
ground line can be programmed individually. The selection of each sensor is done via
its output pin.
For HAL835 the digital output for generation of the BiPhase-M programming protocol is
also used to generate the PWM output signal.
The open-circuit detection function provides a defined output voltage for the analog output
if the VSUP or GND line are broken. Internal temperature compensation circuitry and
spinning-current offset compensation enable operation over the full temperature range with
minimal changes in accuracy and high offset stability. The circuitry also reduces offset
shifts due to mechanical stress from the package. The non-volatile memory consists of
redundant and non-redundant EEPROM cells. The non-redundant EEPROM cells are only
used to store production information for tracking inside the sensor. In addition, the sensor
IC is equipped with devices for overvoltage and reverse-voltage protection at all pins.
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DATA SHEET
HAL 83x
HAL
83x
V
SUP
8
7
6
5
VSUP
OUT
GND
Fig. 3–1: Programming with VSUP modulation
VSUP
Internally
Open-Circuit,
Overvoltage,
Undervoltage
Detection
Stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Protection
Devices
Oscillator
50
50
Digital
Signal
Processing
OUT
Switched
Hall Plate
A/D
Converter
D/A
Converter
Analog
Output
EEPROM Memory
Supply
Level
Digital
Output
Detection
Open-Circuit
Detection
Lock Control
GND
Fig. 3–2: HAL83x block diagram
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DATA SHEET
HAL 83x
ADC-Readout Register
14 bit
Digital Output
14 bit
Digital Signal Processing
A/D
Converter
Digital
Filter
Multiplier
Adder
Limiter
D/A
Converter
Mode Register
Clamp
low
8 bit
Clamp
high
9 bit
TC
TCSQ
3 bit
Sensitivity
14 bit
VOQ
Lock
1 bit
Micronas
Register
Range
3 bit
Filter
2 bit
5 bit
11 bit
TC Range Select 2 bit
Other: 8 bit
EEPROM Memory
Lock
Control
Fig. 3–3: Details of EEPROM Registers and Digital Signal Processing
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DATA SHEET
HAL 83x
3.2. A/D Converter
The ADC used in HAL83x sensor has a "Sigma-Delta" architecture. It delivers an over-
sampled multi-bit stream with high-frequency shaped quantization noise. Low-pass
filtering performs an averaging of the signal by accumulation. With longer accumulation
the resolution of the data converter increases.
The accumulation takes place in the decimating filter, the low-pass filter, and the external
RC-filter.
A pplication circuit:
R C Low pass Filter
Fig. 3–4: Signal path
Example of a Sigma-Delta-ADC (simplified illustration)
Fig. 3–5: Sigma-Delta-ADC
A: Input Signal
B: Integrated value
C: High frequency data stream (modulated)
After filtering (D), the signal is reconstructed: the lower the cutoff frequency of this filter
the higher is the resolution.
The A/D readout of the sensor is a snapshot of the explained data stream.
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DATA SHEET
HAL 83x
3.3. Digital Signal Processing and EEPROM
The DSP performs signal conditioning and allows adaption of the sensor to the customer
application. The parameters for the DSP are stored in the EEPROM registers. The details
are shown in Fig. 3–3.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity: name of the parameter
The EEPROM registers consist of four groups:
Group 1 contains the registers for the adaptation of the sensor to the magnetic system:
MODE for selecting the magnetic field range and filter frequency, TC, TCSQ and
TC-Range for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output characteristics: SENSITIVITY,
VOQ, CLAMP-LOW (MIN-OUT), CLAMP-HIGH (MAX-OUT) and OUTPUT MODE. The
output characteristic of the sensor is defined by these parameters.
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output signal at
B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
VOUT
B
-----------------
Sensitivity =
– The output voltage can be calculated as:
VOUT = Sensitivity B + VOQ
The output voltage range can be clamped by setting the registers CLAMP-LOW and
CLAMP-HIGH in order to enable failure detection (such as short-circuits to VSUP or
GND and open connections).
Group 3 contains the general purpose register GP. The GP Register can be used to
store customer information, like a serial number after manufacturing. TDK-Micronas will
use this GP REGISTER to store informations like, Lot number, wafer number, x and y
position of the die on the wafer, etc. This information can be read by the customer and
stored in its own data base or it can stay in the sensor as is.
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DATA SHEET
HAL 83x
Group 4 contains the Micronas registers and LOCK for the locking of all registers. The
MICRONAS registers are programmed and locked during production. These registers
are used for oscillator frequency trimming, A/D converter offset compensation, and sev-
eral other special settings.
An external magnetic field generates a Hall voltage on the Hall plate. The ADC
converts the amplified positive or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to a digital value. This value can
be read by the A/D-READOUT register to ensure that the suitable converter
modulation is achieved. The digital signal is filtered in the internal low-pass filter and
manipulated according to the settings stored in the EEPROM. The digital value after
signal processing is readable in the D/A-READOUT register. Depending on the
programmable magnetic range of the Hall IC, the operating range of the A/D
converter is from 15 mT...+15 mT up to 150 mT...+150 mT.
During further processing, the digital signal is multiplied with the sensitivity factor, added to
the quiescent output voltage level and limited according to the clamping voltage levels. The
result is converted to an analog signal and stabilized by a push-pull output stage.
The D/A-READOUT at any given magnetic field depends on the programmed magnetic
field range, the low-pass filter, SENSITIVITY, VOQ, TC values and CLAMP-LOW and
CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383.
Note
During application design, it should be taken into consideration that the
maximum and minimum D/A-READOUT should not violate the error band
of the operational range.
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DATA SHEET
HAL 83x
MODE register
The MODE register contains all bits used to configure the A/D converter and the different
output modes.
Table 3–1: MODE register of HAL830 / HAL835
MODE
Bit Number
9
8
7
6
5
4
3
2
1
0
Parameter
RANGE Reserved
OUTPUT-
MODE
FILTER RANGE
(together
Reserved
with bit 9)
Magnetic Range
The RANGE bits define the magnetic field range of the A/D converter.
Table 3–2: Magnetic Range HAL 835
Magnetic Range RANGE
MODE
MODE [9]
MODE [2:1]
15 mT
30 mT
60 mT
80 mT
100 mT
150 mT
1
0
0
0
0
1
00
00
01
10
11
11
Table 3–3: Magnetic Range HAL 830
Magnetic Range RANGE
MODE [9]
MODE [2:1]
30 mT
60 mT
80 mT
100 mT
150 mT
0
0
0
0
1
00
01
10
11
11
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DATA SHEET
HAL 83x
Filter
The FILTER bits define the 3 dB frequency of the digital low-pass filter.
Table 3–4: FILTER bits defining the3 dB frequency
3 dB Frequency
80 Hz
MODE [4:3]
00
10
11
01
500 Hz
1 kHz
2 kHz
Output Format
The OUTPUTMODE bits define the different output modes of HAL83x.
Table 3–5: OUTPUTMODE for HAL835
Output Format
MODE [7:5]
000
Analog Output (12 bit)
Multiplex Analog Output (continuously)
Multiplex Analog Output (external trigger)
Burn-In Mode
001
011
010
PWM
110
PWM (inverted polarity)
111
Table 3–6: OUTPUTMODE for HAL830
Output Format
MODE [7:5]
000
Analog Output (12 bit)
In Analog Output mode the sensor provides an ratiometric 12 bit analog output voltage
between 0 V and 5 V.
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DATA SHEET
HAL 83x
In Multiplex Analog Output mode the sensor delivers two analog 7-bit values. The 7 LSB
(least significant bits) and the 7 MSB of the output value are transmitted separately. This
enables the sensor to transmit a 14-bit signal to the 8-bit A/D converter of an ECU with the
advantage of achieving a higher signal-to-noise ratio in a disturbed environment.
– In external trigger mode the ECU can switch the output of the sensor between LSB and
MSB by changing the current flow direction through the sensor’s output. In case the out-
put is pulled up by a 10 k resistor, the sensor sends the MSB. If the output is pulled
down, the sensor will send the LSB. Maximum refresh rate is about 500 Hz (2 ms).
– In continuous mode the sensor transmits first LSB and then MSB continuously and
the ECU must listen to the data stream sent by the sensor.
In the Multiplex Analog Output mode 1 LSB is represented by a voltage level change of
39 mV. In Analog Output mode with14 bit 1 LSB would be 0.31 mV.
In Burn-In Mode the signal path of the sensors DSP is stimulated internally without applied
magnetic field. In this mode the sensor provides a “saw tooth” shape output signal. Shape
and frequency of the saw tooth signal depend on the programming of the sensor.
This mode can be used for Burn-In test in the customers production line.
In PWM mode the sensor provides an 11 bit PWM output. The PWM period is 8 ms and
the output signal will change between 0 V and 5 V supply voltage. The magnetic field
information is coded in the duty cycle of the PWM signal. The duty cycle is defined as
the ratio between the high time “s” and the period “d” of the PWM signal (see Fig. 3–6).
Note
The PWM signal is updated with the rising edge. If the duty cycle is evaluated
with a microcontroller, the trigger-level for the measurement value should be
the falling edge. Please use the rising edge to measure the PWM period.
For PWM (inverted) the duty-cycle value is then inverted. Meaning that a 70% duty-
cycle in normal PWM mode is 30% duty-cycle in PWM (inverted) mode.
Out
d
s
V
V
high
low
time
Update
Fig. 3–6: Definition of PWM signal
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DATA SHEET
HAL 83x
TC Register
The temperature dependence of the magnetic sensitivity can be adapted to different
magnetic materials in order to compensate for the change of the magnetic strength with
temperature. The adaptation is done by programming the TC (Temperature Coefficient)
and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and
the curvature of the temperature dependence of the magnetic sensitivity can be
matched to the magnet and the sensor assembly. As a result, the output voltage char-
acteristic can be constant over the full temperature range. The sensor can compensate
for linear temperature coefficients ranging from about 3100 ppm/K up to 1000 ppm/K
and quadratic coefficients from about 7 ppm/K² to 2 ppm/K².
The full TC range is separated in the following four TC range groups (see Table 3–7
and Table 5–1 on page 40).
Table 3–7: TC-Range Groups
TC-Range [ppm/k]
TC-Range Group
(see also Table 5–1 on page 40)
3100 to 1800 (not for 15mT range)
1750 to 550 (not for 15mT range)
500 to +450 (default value)
+450 to +1000
0
2
1
3
TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four
ranges. For example 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Please
refer to Section 5.3. for more details.
Sensitivity
The SENSITIVITY register contains the parameter for the multiplier in the DSP. The
Sensitivity is programmable between 4 and 4. For VSUP = 5 V, the register can be
changed in steps of 0.00049.
For all calculations, the digital value from the magnetic field of the D/A converter is
used. This digital information is readable from the D/A-READOUT register.
VOUT 16383
D/A-READOUT VDD
------------------------------------------------------------------
SENSITIVITY =
SensINITIAL
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DATA SHEET
HAL 83x
VOQ
The VOQ register contains the parameter for the adder in the DSP. VOQ is the output
signal without external magnetic field (B = 0 mT) and programmable from VSUP
(100% duty-cycle) up to VSUP (100% duty-cycle). For VSUP = 5 V, the register can
be changed in steps of 4.9 mV (0.05% duty-cycle).
Note: If VOQ is programmed to a negative value, the maximum output signal is limited to:
VOUTmax = VOQ + VSUP
Clamping Levels
The output signal range can be clamped in order to detect failures like shorts to VSUP or
GND or an open circuit.
The CLAMP-LOW register contains the parameter for the lower limit. The lower clamp-
ing limit is programmable between 0 V (min. duty-cycle) and VSUP/2 (50% duty-cycle).
For VSUP = 5 V, the register can be changed in steps of 9.77 mV (0.195% duty-cycle).
The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamp-
ing voltage is programmable between 0 V (min. duty-cycle) and VSUP (max. duty-cycle).
For VSUP = 5 V, in steps of 9.77 mV (0.195% duty-cycle).
GP Register
The register GP0 to GP 3 can be used to store some information, like production date or
customer serial number. TDK-Micronas will store production Lot number, wafer number
and x,y coordinates in registers GP1 to GP3. The total register contains of four blocks with
a length of 13 bit each.The customer can read out this information and store it in his pro-
duction data base for reference or he can store own production information instead.
Note
This register has no redundancy (and guarantee is limited) for traceability.
To read/write this register it is mandatory to read/write all GP register one
after the other starting with GP0. In case of writing the registers it is neces-
sary to first write all registers followed by one store sequence at the end.
Even if only GP0 should be changed all other GP registers must first be
read and the read out data must be written again to these registers.
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DATA SHEET
HAL 83x
LOCK
By setting the 1-bit register all registers will be locked and the sensor will no longer
respond to any supply voltage modulation. This bit is active after the first power-off and
power-on sequence after setting the LOCK bit. EMC properties of the HAL83x is only
guaranteed for locked devices.
Warning This register cannot be reset!
D/A-READOUT
This 14-bit register delivers the actual digital value of the applied magnetic field after the
signal processing. This register can be read out and is the basis for the calibration pro-
cedure of the sensor in the system environment.
Note
The MSB and LSB are reversed compared with all the other registers.
Please reverse this register after readout.
Note
HAL835: During calibration it is mandatory to select the Analog Output as
output format. The D/A-Readout register can be read out only in the Analog
Output mode. For all other modes the result read back from the sensor will
be a 0. After the calibration the output format can than easily be switched to
the wanted output mode, like PWM.
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DATA SHEET
HAL 83x
3.4. Calibration Procedure
3.4.1. General Procedure
For calibration in the system environment, the application kit from TDK-Micronas is
recommended. It contains the hardware for generation of the serial telegram for pro-
gramming (Programmer Board Version 5.1) and the corresponding software (PC83x)
for the input of the register values.
For the individual calibration of each sensor in the customer application, a two point
adjustment is recommended. The calibration shall be done as follows:
Step 1: Input of the registers which need not be adjusted individually
The magnetic circuit, the magnetic material with its temperature characteristics, the filter
frequency, the output mode and the GP register value are given for this application.
Therefore, the values of the following register blocks should be identical for all sensors
of the customer application.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the sensor position)
– OUTPUTMODE
– TC, TCSQ and TC-RANGE
(depends on the material of the magnet and the other temperature dependencies of the
application)
– GP
(if the customer wants to store own production information. It is not necessary to change
this register)
As the clamping levels are given. They have an influence on the D/A-Readout value
and have to be set therefore after the adjustment process.
Write the appropriate settings into the HAL83x registers.
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
Step 2: Initialize DSP
As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ and
CLAMP-LOW/HIGH, these registers have to be initialized with defined values, first:
– VOQINITIAL = 2.5 V
– Clamp-Low = 0 V
– Clamp-High = 4.999 V
– SensINITIAL (see Table 3–8)
Table 3–8: SensINITIAL
3dB Filter frequency
Sens
0.464
0.3
INITIAL
80 Hz
500 Hz
1 kHz
2 kHz
0.321
0.641
Step 3: Define Calibration Points
The calibration points 1 and 2 can be set inside the specified range. The corresponding
values for VOUT1 and VOUT2 result from the application requirements.
LowClampingVoltage VOUT1,2 HighClampingVoltage
For highest accuracy of the sensor, calibration points near the minimum and maximum
input signal are recommended. The difference of the output voltage between calibration
point 1 and calibration point 2 should be more than 3.5 V.
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
21
DATA SHEET
HAL 83x
Step 4: Calculation of VOQ and Sensitivity
Set the system to calibration point 1 and read the register D/A-READOUT. The result is
the value D/A-READOUT1.
Now, set the system to calibration point 2, read the register D/A-READOUT again, and
get the value D/A-READOUT2.
With these values and the target values VOUT1 and VOUT2, for the calibration points 1
and 2, respectively, the values for Sensitivity and VOQ are calculated as:
Vout2 – Vout1
D/A-Readout2 – D/A-Readout1
16383
-------------------------------------------------------------------------------- --------------
Sensitivity = Sens
INITIAL
5
5 D/A-Readout2
Sensitivity
--------------------------------------------
--------------------------------------------
INITIAL
Voq = Vout2 –
– Voq
16383
Sensitivity
INITIAL
This calculation has to be done individually for each sensor.
Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the
sensor. At that time it is also possible to store the application specific values for Clamp-Low
and Clamp-High into the sensors EEPROM.The sensor is now calibrated for the customer
application. However, the programming can be changed again and again if necessary.
Note
For a recalibration, the calibration procedure has to be started at the begin-
ning (step 1). A new initialization is necessary, as the initial values from
step 1 are overwritten in step 4.
Step 5: Locking the Sensor
The last step is activating the LOCK function by programming the LOCK bit. Please
note that the LOCK function becomes effective after power-down and power-up of the
Hall IC. The sensor is now locked and does not respond to any programming or reading
commands.
Note
It is mandatory to lock the sensor.
Warning This register can not be reset!
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
4. Specifications
4.1. Outline Dimensions
Product
HAL 830/835/1002
14.7ꢀ0.2 standard
1.55
gate remain
short lead
L
Y
A
D
0.395ꢀ0.09
0.3
D
ꢁ
center of
sensitive area
ꢀ0.05
4.06
ꢀ0.05
1.5
0.7
1+0.2
ejector pin Ø1.5
A
0.5 +- 0.1
0.08
1
2
3
dambar cut,
not Sn plated (6x)
ꢀ0.05
0.36
Sn plated
ꢀ0.05
Sn plated
0.43
ꢀ0.4
ꢀ0.4
2.54
2.54
lead length cut
not Sn plated (3x)
0
2.5
5 mm
scale
Physical dimensions do not include moldflash.
Sn-thickness might be reduced by mechanical handling.
BACK VIEW
SPECIFICATION
FRONT VIEW
JEDEC STANDARD
ISSUE DATE
REVISION DATE
PACKAGE
TO92UT-1
ANSI
REV.NO.
1
DRAWING-NO.
(YY-MM-DD)
(YY-MM-DD)
ITEM NO. ISSUE
TYPE
NO.
17-12-11
17-12-11
CUTS00031031.1
ZG
2087_Ver.01
c
Copyright 2016 TDK-Micronas GmbH, all rights reserved
Fig. 4–1:
TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
23
DATA SHEET
HAL 83x
Product
HAL 83x
14.7ꢀ0.2
standard
L
short lead
gate remain
Y
A
D
1.5
0.295ꢀ0.09
0.3
D
ꢁ
center of
sensitive area
ꢀ0.05
4.06
ꢀ0.05
1.5
0.7
1+0.2
ejector pin Ø1.5
A
0.5 +- 0.1
0.08
1
2
3
dambar cut,
not Sn plated (6x)
ꢀ0.05
Sn plated
0.36
ꢀ0.05
0.43
Sn plated
ꢀ0.4
ꢀ0.4
1.27
1.27
2.54
lead length,
not Sn plated (3x)
0
2.5
5 mm
scale
Physical dimensions do not include moldflash.
Sn-thickness might be reduced by mechanical handling.
FRONT VIEW
BACK VIEW
SPECIFICATION
JEDEC STANDARD
ISSUE DATE
REVISION DATE
PACKAGE
TO92UT-2
ANSI
REV.NO.
1
DRAWING-NO.
CUTI00032501.1
(YY-MM-DD)
(YY-MM-DD)
ITEM NO. ISSUE
TYPE
NO.
17-04-21
17-04-21
ZG
2081_Ver.01
c
Copyright 2016 TDK-Micronas GmbH, all rights reserved
Fig. 4–2:
TO92UT-2 Plastic Transistor Standard UT package, 3 pins
Weight approximately 0.12 g
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
p
Δh
Δh
Δ
p
Δ
B
A
D0
F2
P2
F1
feed direction
P0
view A-B
H
H1
all dimensions in mm
TO92UA TO92UT
21 - 23.1 22 - 24.1
other dimensions see drawing of bulk
max. allowed tolerance over 20 hole spacings 1.0
Short leads
Long leads
18 - 20
24 - 26
28 - 30.1
27 - 29.1
Δp
UNIT
mm
D0
4.0
F1
F2
Δh
L
P0
P2
T
T1
W
W0
6.0
W1
9.0
W2
0.3
2.74
2.34
2.74
2.34
11.0
max
13.2
12.2
7.05
5.65
1.0
1.0
0.5
0.9
18.0
JEDEC STANDARD
ISSUE DATE
YY-MM-DD
ANSI
DRAWING-NO.
06632.0001.4
ZG-NO.
ISSUE
-
ITEM NO.
ICE 60286-2
ZG001032_Ver.06
16-07-18
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–3:
TO92UA/UT: Dimensions ammopack inline, spread
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
25
DATA SHEET
HAL 83x
p
Δh
Δh
Δ
p
Δ
B
A
D0
F2
P2
F1
feed direction
P0
view A-B
H
H1
all dimensions in mm
TO92UA TO92UT
other dimensions see drawing of bulk
max. allowed tolerance over 20 hole spacings 1.0
Short leads
Long leads
18 - 20
24 - 26
21 - 23.1
27 - 29.1
22 - 24.1
28 - 30.1
Δp
UNIT
mm
D0
4.0
F1
F2
Δh
L
P0
P2
T
T1
W
W0
6.0
W1
9.0
W2
0.3
1.47
1.07
1.47
1.07
11.0
max
13.2
12.2
7.05
5.65
1.0
1.0
0.5
0.9
18.0
STANDARD
ISSUE DATE
YY-MM-DD
ANSI
DRAWING-NO.
06631.0001.4
ZG-NO.
ISSUE
-
ITEM NO.
IEC 60286-2
ZG001031_Ver.05
16-07-18
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–4:
TO92UA/UT: Dimensions ammopack inline, not spread
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
26
DATA SHEET
HAL 83x
4.2. Soldering, Welding and Assembly
Information related to solderability, welding, assembly, and second-level packaging is
included in the document “Guidelines for the Assembly of Micronas Packages”.
It is available on the TDK-Micronas website (https://www.micronas.com/en/service-center/
downloads) or on the service portal (https://service.micronas.com).
4.3. Pin Connections and Short Descriptions
Table 4–1: Pin Connection and Short Description
Pin No.
Pin Name
VSUP
GND
Type
SUPPLY
GND
I/O
Short Description
1
2
3
Supply Voltage and Programming Pin
Ground
OUT
Push-Pull Output and Selection Pin
1
VSUP
OUT
3
2 GND
Fig. 4–5: Pin configuration
4.4. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
TDK-Micronas GmbH
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DATA SHEET
HAL 83x
4.5. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only. Functional operation of the device at
these conditions is not implied. Exposure to absolute maximum rating conditions for
extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to
high static voltages or electric fields; however, it is advised that normal precautions be
taken to avoid application of any voltage higher than absolute maximum-rated voltages
to this circuit.
All voltages listed are referenced to ground (GND).
Table 4–2: Absolute Maximum Ratings
Symbol
Parameter
Pin
No.
Min. Max. Unit Condition
VSUP
VSUP
VOUT
Supply Voltage
Supply Voltage
Output Voltage
1
1
3
8.5
16
5
8.5
16
16
2
V
V
V
V
t < 96 h3)4)
t < 1 h3)4)
VOUT VSUP Excess of Output Voltage 3,1
over Supply Voltage
IOUT
Continuous Output Cur-
rent
3
10
10
10
mA
min
kV
tSh
Output Short Circuit Dura- 3
tion
VESD
ESD Protection1)
1
3
8
7.5
8
7.5
TJ
Junction Temperature
under bias2)
50
190
°C
tNVMLife
Tstorage
EEPROM
25
years TA = 85°C
°C Device only without
Transportation/Short Term
Storage Temperature
55
150
packing material
1)
AEC-Q100-002 (100 pF and 1.5 k)
For 96 h - Please contact TDK-Micronas for other temperature requirements
No cumulated stress
2)
3)
4)
As long as T is not exceeded
J
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
4.6. Storage and Shelf Life
Information related to storage conditions of Micronas sensors is included in the document
“Guidelines for the Assembly of Micronas Packages”. It gives recommendations linked to
moisture sensitivity level and long-term storage.
It is available on the TDK-Micronas website (https://www.micronas.com/en/service-center/
downloads) or on the service portal (https://service.micronas.com).
4.7. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended
Operating Conditions/Characteristics” is not implied and may result in unpredictable
behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Table 4–3: Recommended Operating Conditions
Symbol Parameter
Pin No. Min. Typ. Max. Unit
Condition
VSUP
IOUT
RL
Supply Voltage
1
3
3
4.5
5
5.5
V
12.4 12.5 12.6
During programming
Continuous Output
Current
1.2
4.5
0
1.2
mA
k
Load Resistor
10
Can be pull-up or
pull-down resistor
CL
Load Capacitance
3
100 1000 nF
Analog output only
CP
Protection Capacitor
1-2
0.33 100 2700 nF
NPRG
Number of EEPROM
Programming Cycles
100
cycles 0°C < Tamb < 55°C
TJ
Junction Temperature
Range1)
40
40
40
125
150
170
°C
°C
°C
for 8000 h2)
for 2000 h2)
for 1000 h2)
1)
Depends on the temperature profile of the application. Please contact TDK-Micronas for life time calculations.
Time values are not cumulative
2)
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
4.8. Characteristics
at TJ = 40 °C to 170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and lock-
ing, at Recommended Operation Conditions if not otherwise specified in the column
“Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Table 4–4: Characteristics
Symbol
General
ISUP
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Supply Current
over Temperature Range
1
3
5
7
1
10
10
mA
ROUT
Output Resistance over
Recommended Operating
Range
VOUTLmax VOUT VOUTHmin
Guaranteed by Design
100% tested
fOSC
BW
Oscillator Frequency
110
128
2
150
kHz
kHz
512 kHz internally
100% tested
Small Signal Bandwidth (3 dB)
3
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
Basics
VOQ
Voltage at Output Quiet Mode
3
3
2.46
2.48
2.5
V
B = 0 mT, IOUT = 0 mA, TJ = 25 °C
f3dB = 1000 Hz, BRange = 30 mT,
Voq = 2.5 V, Sensitivity = 0.6
unadjusted sensor
delivery status
based on characterisation
Sensitivity
80
90
100
mV/mT With SENSITIVITY = 1
Voq = 2.5 V
Magnetic range = 60mT
3 dB frequency = 500 Hz
TC =15
TCSQ = 1
TC-Range = 500 ... +450 ppm/K
Overall Performance
INL
Non-Linearity of Output Voltage
over Temperature
3
0.5
0
0.5
%
% of supply voltage1)
For VOUT = 0.35 V ... 4.65 V;
V
SUP = 5 V, Sensitivity 0.95
Dev-VOUT
VOUTn
Deviation of Output Voltage
over Temperature
3
3
30
0
30
mV
mV
Noise Output VoltageRMS
0.6
1.4
Magnetic range = 60 mT
3 dB Filter frequency = 500 Hz
Sensitivity 0.7; C = 4.7 nF (VSUP
& VOUT to GND) based on charac-
terisation
ER
Ratiometric Error of Output
over Temperature
3
0.25
0
0.25
%
VOUT1 VOUT2> 2 V
during calibration procedure
(Error in VOUT / VSUP
)
1) If more than 50% of the selected magnetic field range is used (Sensitivity 0.5) and the temperature compensation is suitable.
INL = VOUT VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature.
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
Table 4–4: Characteristics, continued
Symbol
DAC
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
2)
Resolution
3
3
12
bit
Ratiometric to VSUP
DNL
Differential Non-Linearity of D/A
Converter3)
2.0
1.5
0
0
2.0
1.5
LSB
HAL830
HAL835
Only @ 25°C ambient temperature
Drift over temperature
ES
Error in Magnetic Sensitivity
3
4
1
0
0
4
1
%
HAL830
HAL835
over Temperature Range4)
VSUP = 5 V; 60 mT range,
3 dB frequency = 500 Hz,
TC & TCSQ for linearized
temperature coefficients
(see Section Table 4–5: on
page 32)
VOffset
Offset Drift over Temperature
Range
3
0.6
0.2
0.25
0.1
0.6
0.2
%
VSUP
HAL830
HAL835
VOUT(B = 0 mT)25°C
VSUP = 5 V; 60 mT range,
3 dB frequency = 500 Hz,
TC = 15, TCSQ = 1, TC-Range = 1
0.65 < sensitivity < 0.65
4)
VOUT(B = 0 mT)max
2) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096
3) Only tested at 25°C. The specified values are test limits only. Overmolding and packaging might influence this parameter
4)
T
= 150°C
ambient
TDK-Micronas GmbH
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DATA SHEET
HAL 83x
4.8.1. Additional Information
Table 4–5: Additional Information
Symbol
General
tr(O)
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Step Response Time of Output1)
3
3.0
1.5
1.1
0.9
3.5
1.75
1.3
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
1.05
CL = 10 nF, time to 90% of final out-
put voltage for a steplike
Signal Bstep from 0 mT to Bmax
CL = 10 nF, 90% of VOUT
tPOD
Power-Up Time (Time to reach
stable Output Voltage)
1.5
1.7
1.9
ms
PORUP
Power-On Reset Voltage (UP)
3.4
3.0
V
V
PORDOWN
Power-On Reset Voltage
(DOWN)
DAC
VOUTCL
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
3
3
15
15
0
0
15
15
mV
mV
RL = 5 k, VSUP = 5 V
Spec values are derived from reso-
lutions of the registers Clamp-Low/
Clamp-High and the parameter
Voffset
VOUTCH
Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
VOUTH
VOUTL
Upper Limit of Signal Band2)
Lower Limit of Signal Band2)
D/A-Converter Glitch Energy
3
3
3
4.65
4.8
0.2
40
V
VSUP = 5 V, 1 mA IOUT 1mA
0.35
V
VSUP = 5 V, 1 mA IOUT 1mA
3)
DACGE
nV
1) Guaranteed by design
2)
Signal Band Area with full accuracy is located between V
and V
. The sensor accuracy is reduced below V
and above V
OUTL
OUTH
OUTL OUTH
3) The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state. This energy is
normally specified as the area of the glitch in nVs
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
4.8.2. PWM Output (HAL835 only)
Table 4–6: PWM Output (HAL835 only)
Symbol
Parameter
Pin No.
Min.
Typ.
11
0
Max.
Unit
bit
Conditions
Resolution
3
3
DCMIN-
DUTY
Accuracy of Duty Cycle at
Clamp Low over Temperature
Range
0.3
0.3
%
Spec values are derived from
resolutions of the registers Clamp-
Low/Clamp-High and the para-
meter DCOQoffset
DCMAX-
DUTY
Accuracy of Duty Cycle at
Clamp High over Temperature
Range
3
0.3
0
0.3
%
VOUTH
VOUTL
fPWM
Output High Voltage
Output Low Voltage
3
3
3
4.8
0.2
125
V
VSUP = 5 V, 1 mA IOUT 1mA
VSUP = 5 V, 1 mA IOUT 1mA
V
PWM Output Frequency over
Temperature Range
105
145
Hz
tPOD
Power-Up Time (Time to reach
valid Duty Cycle)
3
3
8.5
ms
ms
tr(O)
Step Response Time of Output
3
13
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
0,9
0,6
0,4
1,2
0.8
0,5
Time to 90% of final output voltage
for a steplike signal Bstep from 0
mT to Bmax
4.8.3. TO92UT Packages
Table 4–7: TO92UT Packages
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Thermal Resistance
junction to air
Rthja
Rthjc
235
61
K/W
K/W
Determined with a 1s0p board
Determined with a 1s0p board
junction to case
4.8.4. Definition of sensitivity error ES
ES is the maximum of the absolute value of the quotient of the normalized measured
value1 over the normalized ideal linear2 value minus 1:
meas
ideal
------------
ES = max abs
– 1
{Tmin, Tmax}
In the example below, the maximum error occurs at 10°C:
1,001
0,993
------------
ES =
– 1 = 0.8%
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
1
: normalized to achieve a least-squares method straight line that has a value of 1 at 25°C
: normalized to achieve a value of 1 at 25°C
2
ideal 200 ppm/k
1.03
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
1.02
1.01
1.00
0.99
0.98
1.001
0.992
–25 -10
150
175
0
25
temperature [°C]
125
–50
50
75 100
ES definition example
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
4.8.5. Power-On Operation
at TJ = 40 °C to 170 °C, after programming and locking. Typical Characteristics for
TJ = 25 °C.
Table 4–8: Power-On Operation
Symbol
PORUP
Parameter
Min.
Typ.
3.4
Max.
Unit
V
Power-On Reset Voltage (UP)
Power-On Reset Voltage (DOWN)
PORDOWN
3.0
V
Vout [V]
97%VSUP
97%VSUP
97%VSUP
Ratiometric Output
3.5 V
5
VSUP,OV
VSUP,UV
VSUP [V]
: Output Voltage undefined
VSUP,UV = Undervoltage Detection Level
SUP,OV = Overvoltage Detection Level
V
Fig. 4–6: Analog output behavior for different supply voltages
VSUP
First PWM starts
5 V
VSUP,UVmin.
4.2 V
time
tPOD
VOUT
The first period contains
no valid data
Output undefined
time
No valid signal
Valid signal
Fig. 4–7: Power-up behavior of HAL835 with PWM output activated
TDK-Micronas GmbH
March 21, 2018; DSH000169_003EN
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DATA SHEET
HAL 83x
4.9. Diagnostics and Safety Features
4.9.1. Overvoltage and Undervoltage Detection
at TJ = 40 °C to 170 °C, Typical Characteristics for TJ = 25 °C, after programming and
locking
Table 4–9: Over-/Undervoltage Detection
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Test Conditions
1)2)
1)2)
VSUP,UV
VSUP,OV
Undervoltage detection level
Overvoltage detection level
1
1
4.2
8.9
4.5
V
V
8.5
10.0
1) If the supply voltage drops below VSUP,UV or rises above VSUP,OV, the output voltage is switched to VSUP (97% of VSUP at RL = 10 k
to GND).
2) If the PWM output of HAL835 is activated, then the output signal will follow VSUP and PWM signal is switched off
Note
The over- and undervoltage detection is activated only after locking the sensor!
4.9.2. Open-Circuit Detection
at TJ = 40 °C to 170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor.
Table 4–10: Open-Circuit Detection
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Comment
VOUT
Output voltage at open
3
0
0
0.15
V
VSUP = 5 V
VSUP line
RL = 10 kto 200k
0
0
0.2
0.25
5.0
5.0
5.0
V
V
V
V
V
VSUP = 5 V
5 kRL < 10 k
0
0
VSUP = 5 V
4.5 kRL < 10 k1)
VOUT
Output voltage at open
GND line
3
4.85
4.8
4.75
4.9
4.9
4.9
VSUP = 5 V
RL = 10 kto 200k
VSUP = 5 V
5 kRL < 10 k
VSUP = 5 V
4.5 kRL < 10 k1)
1)Characterize on small sample size, not tested.
Note
In case that the PWM output mode is used the sensor will stop transmis-
sion of the PWM signal if VSUP or GND lines are broken and VOUT will be
according to above table.
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DATA SHEET
HAL 83x
4.9.3. Overtemperature and Short-Circuit Protection
If overtemperature >180 °C or a short-circuit occurs, the output will be switched off and
goes in high impedance conditions.
4.9.4. EEPROM Redundancy
The non-volatile memory except the GP registers uses the Micronas Fail Safe Redun-
dant Cell technology well proven in automotive applications.
4.9.5. ADC Diagnostic
The A/D-READOUT register can be used to avoid under/overrange effects in the A/D
converter.
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DATA SHEET
HAL 83x
5. Application Notes
5.1. Application Circuit (for analog output mode only)
For EMC protection, it is recommended to connect one ceramic 100 nF capacitor each
between ground and the supply voltage, respectively the output voltage pin.
Please note that during programming, the sensor will be supplied repeatedly with the
programming voltage of 12.5 V for 100 ms. All components connected to the VSUP line
at this time must be able to resist this voltage.
VSUP
OUT
HAL83x
100 nF
100 nF
GND
Fig. 5–1: Recommended application circuit (analog output signal)
VSUP
OUT
HAL83x
100 nF
100 nF
GND
Fig. 5–2: Recommended application circuit (PWM output signal)
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DATA SHEET
HAL 83x
5.2. Use of two HAL83x in Parallel (for analog output mode only)
Two different HAL83x sensors which are operated in parallel to the same supply and
ground line can be programmed individually. In order to select the IC which should be
programmed, both Hall ICs are inactivated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only
the activated sensor will react to all following read, write, and program commands. If the
second IC has to be programmed, the “Deactivate” command is sent again, and the
second IC can be selected.
Note
The multi-programming of two sensors requires a 10 k pull-down resistor
on the sensors output pins.
VSUP
OUT A & Select A
OUT B & Select B
HAL83x
Sensor A
HAL83x
Sensor B
100 nF
100 nF
100 nF
GND
Fig. 5–3: Recommended Application circuit (parallel operation of two HAL83x)
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DATA SHEET
HAL 83x
5.3. Temperature Compensation
The relationship between the temperature coefficient of the magnet and the corresponding
TC, TCSQ and TC-Range codes for linear compensation is given in the following table. In
addition to the linear change of the magnetic field with temperature, the curvature can be
adjusted as well. For this purpose, other TC, TCSQ and TC-Range combinations are
required which are not shown in the table. Please contact TDK-Micronas for more detailed
information on this higher order temperature compensation.
Table 5–1: Temperature Compensation
Temperature
Coefficient of
TC-Range
Group
TC
TCSQ
Magnet (ppm/K)
1075
1000
900
3
3
3
3
3
3
3
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
31
28
24
16
12
8
7
1
0
2
2
2
2
0
1
1
2
1
0
1
4
7
0
2
1
3
6
7
2
750
675
575
450
4
400
31
24
20
16
15
12
8
250
150
50
0
100
200
300
400
500
600
700
800
900
1000
1100
4
0
0
31
28
24
20
16
16
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DATA SHEET
HAL 83x
Table 5–1: Temperature Compensation, continued
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
Group
TC
TCSQ
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2400
2500
2600
2800
2900
3000
3100
3300
3500
2
2
2
2
2
2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
12
12
8
5
0
3
7
1
6
6
7
2
6
1
0
5
5
1
6
3
7
1
4
4
4
0
31
28
28
24
24
20
16
14
12
8
8
4
4
0
Note
Note
The above table shows only some approximate values. TDK-Micronas rec-
ommends to use the TC-Calc software to find optimal settings for tempera-
ture coefficients. Please contact TDK-Micronas for more detailed information.
Please be aware that TC-Range Group 0 and 2 are not valid in the 15 mT
magnetic range.
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DATA SHEET
HAL 83x
5.4. Ambient Temperature
Due to the internal power dissipation, the temperature on the silicon chip (junction temper-
ature TJ) is higher than the temperature outside the package (ambient temperature TA).
TJ = TA + T
At static conditions and continuous operation, the following equation applies:
T = ISUP * VSUP * RthjX
The X represents junction-to-air or junction-to-case.
In order to estimate the temperature difference T between the junction and the respective
reference (e.g. air, case, or solder point) use the max. parameters for ISUP, RthX, and the
max. value for VSUP from the application.
The following example shows the result for junction-to -air conditions. VSUP = 5.5 V,
Rthja = 250 K/W and ISUP = 10 mA the temperature difference T = 13.75 K.
The junction temperature TJ is specified. The maximum ambient temperature TAmax can
be estimated as:
TAmax = TJmax T
5.5. EMC and ESD
Please contact TDK-Micronas for the detailed investigation reports with the EMC and
ESD results.
EMC results are only valid for locked devices.
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DATA SHEET
HAL 83x
6. Programming
6.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The
sensor answers with a serial telegram on the output pin.
The bits in the serial telegram have a different bit time for the VSUP-line and the output.
The bit time for the VSUP-line is defined through the length of the Sync Bit at the beginning
of each telegram. The bit time for the output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as
a voltage change between 50% and 80% of the bit time. After each bit, a voltage
change occurs.
6.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the
Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 6–2)
After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is
valid and the command has been processed, the sensor answers with an Acknowledge
Bit (logical 0) on the output.
– Read a register (see Fig. 6–3)
After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data
Bits, and the Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 6–4)
After evaluating this command, the sensor answers with the Acknowledge Bit. After
the delay time tw, the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 6–5)
If more than one sensor is connected to the supply line, selection can be done by first
deactivating all sensors. The output of all sensors have to be pulled to ground. With
an Activate pulse on the appropriate output pin, an individual sensor can be selected.
All following commands will only be accepted from the activated sensor.
tr
tf
VSUPH
tp0
tp0
logical 0
or
VSUPL
tp1
VSUPH
tp0
tp0
logical 1
or
tp1
VSUPL
Fig. 6–1: Definition of logical 0 and 1 bit
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DATA SHEET
HAL 83x
Table 6–1: Telegram parameters
Symbol
Parameter
Pin Min. Typ. Max. Unit Remarks
VSUPL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VSUPH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
tf
Rise time
Fall time
1
1
0.05
0.05
ms
ms
see Fig. 6–1 on page 43
see Fig. 6–1 on page 43
tp0
Bit time on VSUP
1
3
1.7
2
1.8
3
1.9
4
ms
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
tpOUT is defined through the Acknowl-
edge Bit
tp1
Duty-Cycle Change for logical 1
1, 3 50
65
80
%
V
% of tp0 or tpOUT
VSUPPROG
Supply Voltage for
1
12.4
12.5 12.6
Programming the EEPROM
tPROG
trp
Programming Time for EEPROM
Rise time of programming voltage
Fall time of programming voltage
1
1
1
95
0.2
0
100
0.5
105
1
ms
ms
ms
see Fig. 6–1 on page 43
see Fig. 6–1 on page 43
tfp
1
tw
Delay time of programming voltage after
Acknowledge
1
0.5
0.7
1
ms
Vact
tact
Voltage for an Activate pulse
Duration of an Activate pulse
3
3
3
3
4
5
V
0.05
0
0.1
0.1
0.2
0.2
ms
V
Vout,deact Output voltage after deactivate command
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VSUP
Acknowledge
VOUT
Fig. 6–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
DAT
DP
VOUT
Fig. 6–3: Telegram for coding a Read command
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DATA SHEET
HAL 83x
t
t
t
fp
rp
PROG
V
SUPPROG
ERASE, PROM, and LOCK
AP
Sync
COM
CP
ADR
V
SUP
Acknowledge
V
OUT
t
w
Fig. 6–4: Telegram for coding the EEPROM programming
tr tACT tf
VACT
VOUT
Fig. 6–5: Activate pulse
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DATA SHEET
HAL 83x
6.3. Telegram Codes
Sync Bit
Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for t .
p0
Command Bits (COM)
The Command code contains 3 bits and is a binary number. Table 6–2 shows the available
commands and the corresponding codes for the HAL83x.
Command Parity Bit (CP)
This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The
parity bit is “0”, if the number of zeros is even.
Address Bits (ADR)
The Address code contains 4 bits and is a binary number. Table 6–3 shows the available
addresses for the HAL83x registers.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The parity
bit is “0” if the number of zeros is even.
Data Bits (DAT)
The 14 Data Bits contain the register information.
The registers use different number formats for the Data Bits. These formats are
explained in Section 6.4.
In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is
written, only the last 10 bits are valid.
In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is
read, only the first 10 bits are valid.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the binary number is even. The parity
bit is “0” if the number of zeros is uneven.
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DATA SHEET
HAL 83x
Acknowledge
After each telegram, the output answers with the Acknowledge signal. This logical “0”
pulse defines the exact timing for tpOUT
.
Table 6–2: Available commands
Command
READ
Code
Explanation
read a register
write a register
2
3
4
5
WRITE
PROM
program all non-volatile registers
erase all non-volatile registers
ERASE
6.4. Number Formats
Binary number:
The most significant bit is given as first, the least significant bit as last digit.
Example: 101001 represents 41 decimal.
Signed binary number:
The first digit represents the sign of the following binary number (1 for negative, 0 for
positive sign).
Example: 0101001 represents +41 decimal
1101001 represents 41 decimal
Two’s-complement number:
The first digit of positive numbers is “0”, the rest of the number is a binary number. Neg-
ative numbers start with “1”. In order to calculate the absolute value of the number, cal-
culate the complement of the remaining digits and add “1”.
Example: 0101001 represents +41 decimal
1010111 represents 41 decimal
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DATA SHEET
HAL 83x
6.5. Register Information
CLAMP-LOW
– The register range is from 0 up to 255.
– The register value is calculated by:
LowClampingVoltage 2
--------------------------------------------------------------
CLAMP-LOW =
255
VSUP
CLAMP-HIGH
– The register range is from 0 up to 511.
– The register value is calculated by:
HighClampingVoltage
------------------------------------------------------
CLAMP-HIGH =
511
VSUP
VOQ
– The register range is from 1024 up to 1023.
– The register value is calculated by:
V
------O---Q---
VOQ =
1024
VSUP
SENSITIVITY
– The register range is from 8192 up to 8191.
– The register value is calculated by:
SENSITIVITY = Sensitivity 2048
TC
– The TC register range is from 0 up to 1023.
– The register value is calculated by:
TC = GROUP 256 + TCValue 8 + TCSQValue
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DATA SHEET
HAL 83x
MODE
– The register range is from 0 up to 1023 and contains the settings for FILTER, RANGE,
OUTPUTMODE:
MODE = RANGEMode9 512 +
OUTPUTMODE 32 +
FILTER 8 + RANGEMode2:1 2
D/A-READOUT
– This register is read only.
– The register range is from 0 up to 16383.
DEACTIVATE
– This register can only be written.
– The register has to be written with 2063 decimal (80F hexadecimal) for the deactiva-
tion.
– The sensor can be reset with an Activate pulse on the output pin or by switching off
and on the supply voltage.
Table 6–3: Available register addresses
Register
Code Data
Bits
Format
binary
binary
Customer
Remark
CLAMP-LOW
CLAMP-HIGH
VOQ
1
2
3
4
5
6
7
8
8
read/write/
program
Low clamping voltage
High clamping voltage
9
read/write/
program
11
14
10
2
two’s compl.
binary
read/write/
program
Output quiescent volt-
age
SENSITIVITY
MODE
signed binary
read/write/
program
binary
read/write/
program
Range, filter, output
mode
LOCKR
binary
read/write/
program
Lock Bit
A/D READOUT
14
two’s compl.
binary
read
1)
GP REGISTERS
1...3
3x13 binary
read/write/
program
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DATA SHEET
HAL 83x
Table 6–3: Available register addresses, continued
Register
D/A-READOUT
TC
Code Data
Bits
Format
binary
binary
Customer
Remark
9
14
read
Bit sequence is
reversed during read
11
10
read/write/
program
bits 0 to 2 TCSQ
bits 3 to 7 TC
bits 8 to 9 TC Range
1)
GP REGISTER 0
DEACTIVATE
12
15
13
12
binary
binary
read/write/
program
write
Deactivate the sensor
1) To read/write this register it is mandatory to read/write all GP register one after the other starting
with GP0. In case of a writing the registers it is necessary to first write all registers followed by one
store sequence at the end. Even if only GP0 should be changed all other GP registers must first
be read and the read out data must be written again to these registers.
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DATA SHEET
HAL 83x
6.6. Programming Information
Table 6–4: Data formats
Char
Bit
DAT3
DAT2
DAT1
DAT0
1
5
1
13
1
2
1
1
1
0
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
Register
4
CLAMP
LOW
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CLAMP
HIGH
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
VOQ
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
SENSITIV-
ITY
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MODE
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A/D-
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
READOUT
LOCKR
Write
Read
V
V
GP 1...3
Registers
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D/A-
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
READOUT1)
TC
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
GP 0
Register
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DEACTI-
VATE
Write
1
0
0
0
0
0
0
0
1
1
1
1
V: valid, : ignore, bit order: MSB first
1) LSB first
If the content of any register (except the lock registers) is to be changed, the desired
value must first be written into the corresponding RAM register. Before reading out the
RAM register again, the register value must be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done by first sending an ERASE com-
mand followed by sending a PROM command. The address within the ERASE and
PROM commands must be zero. ERASE and PROM act on all registers in parallel.
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DATA SHEET
HAL 83x
If all HAL83x registers are to be changed, all writing commands can be sent one after
the other, followed by sending one ERASE and PROM command at the end.
During all communication sequences, the customer has to check if the communication with
the sensor was successful. This means that the acknowledge and the parity bits sent by
the sensor have to be checked by the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent from the programmer board.
Note
For production and qualification tests it is mandatory to set the LOCK bit after
final adjustment and programming of HAL83x. The LOCK function is active after
the next power-up of the sensor.
The success of the lock process must be checked by reading at least one sensor
register after locking and/or by an analog check of the sensors output signal.
Electrostatic discharges (ESD) may disturb the programming pulses. Please
take precautions against ESD.
TDK-Micronas GmbH
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DATA SHEET
HAL 83x
7. Data Sheet History
1. Advance Information: ”HAL 83x Robust Mutlti-Purpose Programmable Linear Hall-Effect Sensor Family”,
Jan. 13, 2013, AI000169_001EN. First release of the Advance Information.
2. Preliminary Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
Aug. 2, 2013, PD000213_001EN. First release of the preliminary data sheet.
Major Changes:
– Absolute Maximum Ratings: Values for V
ESD
– Characteristics: Values for V
Offset
3. Preliminary Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
Oct. 2, 2014, PD000213_002EN. Second release of the preliminary data sheet.
Major Changes:
– TO92 UT package drawing updated
– TO92 UT package spread legs option deleted
– Recommended operating conditions and characteristics:
– Updated DNL value for HAL 835
– Updated RL
(load resistor)
min
– Diagnostics and safety features updated
– Offset correction feature for HAL 835 removed
4. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
Feb. 25, 2015, DSH000169_001E. First release of the data sheet.
Major Changes:
– Step Response Times
5. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
May 22, 2015, DSH000169_002E. Second release of the data sheet.
Major Changes:
– Package TO92UT-1 (spread) added
– Package drawing TO92UT-2 (non-spread) updated
– Ammopack drawings updated
– Assembly and storage information
– Several text corrections
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DATA SHEET
HAL 83x
6. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
March 21, 2018, DSH000169_003EN. Third release of the data sheet.
Major Changes:
– Section 3.2. added
– 40mT magnetic range in Table 3–2 and Table 3–3 removed
– Limitation for TC-Range 0 and 2 in Table 3–7
– Initial values for Sens
in Table 3–8 changed
INITIAL
– Sensitivity euquation in Fig. 3.4.1. updated
– V equation in Section 3.4.1. changed
OQ
– Package Drawing TO92UT-1 (spread) updated
– Package Drawing TO92UT-2 (non-spread) updated
– Ammopack Drawing TO92UT/UA (spread) updated
– Ammopack Drawing TO92UT/UA (non-spread) updated
– Section 4.2.updated
– Section 4.5 deleted
– Section 4.6.1 switched to Section 4.6. and got updated
– t
and T
in Table 4–2 added
storage
NVMLife
– C in Table 4–3 added
p
– Characteristics (Table 4–4) updated:
• ROUT conditions
• fOSC added
• V value
OQ
• V
• R
• R
value
conditions
conditions
OUTn
thja
thjc
– Maximum values for t
– Fig. 5–1 added
(Step Response Time of Output) added in Section 4.8.
r(O)
– Parameter A/D-Readout in Table 6–4 added
TDK-Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 www.micronas.com
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