P1300SB [TECCOR]

SIDACtor Device; 设备的SIDACtor
P1300SB
型号: P1300SB
厂家: TECCOR ELECTRONICS    TECCOR ELECTRONICS
描述:

SIDACtor Device
设备的SIDACtor

触发装置 硅浪涌保护器 双向触发二极管
文件: 总2页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MicroCapacitance (MC) SC SIDACtor Device  
MicroCapacitance (MC) SC SIDACtor Device  
The DO-214AA SC MC SIDACtor series is intended for applications sensitive to load  
values. Typically, high speed connections require a lower capacitance. CO values for the  
MicroCapacitance device are 40% lower than a standard SC part.  
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, IEC 60950, UL 60950, and TIA-968-A (formerly known as  
FCC Part 68). Contact factory regarding ITU K.20, K.21, and K.45.  
Electrical Parameters  
Part  
V
V
V
I
I
I
I
C
O
DRM  
S
T
DRM  
S
T
H
Number *  
Volts  
6
Volts  
25  
Volts  
µAmps  
mAmps  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
Amps  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
mAmps  
50  
pF  
55  
35  
60  
60  
60  
50  
50  
50  
40  
40  
40  
40  
40  
P0080SC MC  
P0300SC MC  
P0640SC MC  
P0720SC MC  
P0900SC MC  
P1100SC MC  
P1300SC MC  
P1500SC MC  
P1800SC MC  
P2300SC MC  
P2600SC MC  
P3100SC MC  
P3500SC MC  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
25  
58  
65  
75  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
50  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
90  
120  
140  
170  
190  
220  
275  
320  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
30  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 6  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  
MicroCapacitance (MC) SC SIDACtor Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
T
J
T
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
I
S  
I
H
Waveform = tr x td  
I
DRM  
50  
0
-V  
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Wave-form  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
© 2004 Littelfuse, Inc.  
2 - 7  
http://www.littelfuse.com  
+1 972-580-7777  
SIDACtor® Data Book and Design Guide  

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