Q2008LTV [TECCOR]
TRIAC With INT Trigger, 200V V(DRM), 8A I(T)RMS, TO-220AB, ISOLATED TO-220, 3 PIN;型号: | Q2008LTV |
厂家: | TECCOR ELECTRONICS |
描述: | TRIAC With INT Trigger, 200V V(DRM), 8A I(T)RMS, TO-220AB, ISOLATED TO-220, 3 PIN 局域网 三端双向交流开关 |
文件: | 总6页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
E3
TO-220
MT2
MT1
T
Quadrac
Internally Triggered Triacs (4 A to 15 A)
GE3eneral Description
Teccor’s Quadrac devices are triacs that include a diac trigger
mounted inside the same package. This device, developed by
Teccor, saves the user the expense and assembly time of buying
a discrete diac and assembling in conjunction with a gated triac.
Also, the alternistor Quadrac device (QxxxxLTH) eliminates the
need for a snubber network.
All Teccor triac and diac chips have glass-passivated junctions to
ensure long-term device reliability and parameter stability.
Variations of devices in this data sheet are available for custom
design applications. Consult the factory for more information.
The Quadrac device is a bidirectional AC switch and is gate con-
trolled for either polarity of main terminal voltage. Its primary pur-
pose is for AC switching and phase control applications such as
speed controls, temperature modulation controls, and lighting
controls where noise immunity is required.
Features
Triac current capacities range from 4 A to 15 A with voltage
ranges from 200 V to 600 V. Quadrac devices are available in the
TO-220 package.
The TO-220 package is electrically isolated to 2500 V rms from
the leads to mounting surface. 4000 V rms is available on special
order. This means that no external isolation is required, thus
eliminating the need for separate insulators and insulator-mount-
ing steps and saving dollars over “hot tab” devices.
•
•
•
•
•
Glass-passivated junctions
Electrically-isolated package
Internal trigger diac
High surge capability — up to 200 A
High voltage capability — 200 V to 600 V
©2004 Teccor Electronics
Thyristor Product Catalog
E3 - 1
http://www.teccor.com
+1 972-580-7777
Quadrac
Data Sheets
Part No.
Isolated
Trigger Diac Specifications (T–MT1)
IT(RMS)
(5)
VDRM
(1)
IDRM
(1) (10)
VTM
(1) (3)
∆V
(7)
V
[∆V± ]
I
C
T
(11)
BO
BO
BO
(6)
(6)
T
MT1
MT2
mAmps
Volts
T
=
T
=
T =
C
C
C
TO-220
Volts
Volts
Volts
Volts
µAmps
µFarads
25 °C
100 °C 125 °C
T
= 25 °C
C
See “Package Dimensions” section
for variations. (12)
MIN
200
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
MAX
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
MAX
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
MIN MAX
MIN
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAX
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
MAX
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Q2004LT
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
4 A
Q4004LT
Q6004LT
Q2006LT
Q4006LT
Q6006LT
Q4006LTH
Q6006LTH
Q2008LT
Q4008LT
Q6008LT
Q4008LTH
Q6008LTH
Q2010LT
Q4010LT
Q6010LT
Q4010LTH
Q6010LTH
Q2015LT
Q4015LT
Q6015LT
Q4015LTH
Q6015LTH
6 A
8 A
10 A
15 A
V
V
DRM — Repetitive peak blocking voltage
TM — Peak on-state voltage at maximum rated RMS current
Specific Test Conditions
[∆V±] — Dynamic breakback voltage (forward and reverse)
∆VBO — Breakover voltage symmetry
General Notes
•
C
T — Trigger firing capacitance
All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25 °C unless otherwise specified.
Operating temperature range (TJ) is -40 °C to +125 °C.
Storage temperature range (TS) is -40 °C to +125 °C.
Lead solder temperature is a maximum of +230 °C for 10 seconds
maximum; ≥1/16" (1.59 mm) from case.
The case temperature (TC) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
•
•
•
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
BO — Peak breakover current
DRM — Peak off-state current gate open; VDRM = maximum rated value
GTM — Peak gate trigger current (10 µs Max)
H — Holding current; gate open
T(RMS) — RMS on-state current, conduction angle of 360°
TSM — Peak one-cycle surge
•
I
I
I
I
I
I
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1
(2) See Figure E3.1 for IH versus TC.
(3) See Figure E3.4 and Figure E3.5 for iT versus vT.
(4) See Figure E3.9 for surge ratings with specific durations.
t
gt — Gate controlled turn-on time
V
BO — Breakover voltage (forward and reverse)
http://www.teccor.com
+1 972-580-7777
E3 - 2
©2004 Teccor Electronics
Thyristor Product Catalog
Data Sheets
Quadrac
I2t
di/dt
(9)
IH
(1) (2)
ITSM
(4) (8)
tgt
(6) (9)
IGTM
dv/dt(c)
(1) (5) (8)
dv/dt
(1)
Volts/µSec
T
=
T =
C
C
2
mAmps
Amps
Volts/µSec
µSec
Amps Sec
Amps
Amps/µSec
100 °C 125 °C
MAX
40
40
40
50
50
50
50
50
60
60
60
60
60
60
60
60
60
60
70
70
70
70
70
60/50Hz
55/46
55/46
55/46
80/65
80/65
80/65
80/65
80/65
100/83
100/83
100/83
100/83
100/83
120/100
120/100
120/100
120/100
120/100
200/167
200/167
200/167
200/167
200/167
MIN
3
3
3
4
4
4
25
25
4
4
4
25
25
4
4
4
30
30
4
MIN
TYP
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
75
75
50
50
50
50
100
100
85
12.5
12.5
12.5
26.5
26.5
26.5
26.5
26.5
41
41
41
41
41
1.2
1.2
1.2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
50
50
50
70
70
70
70
70
70
70
70
70
70
70
70
70
70
150
150
125
575
425
175
175
150
575
425
200
200
175
925
775
300
300
200
925
775
450
350
120
120
100
450
350
150
150
120
700
600
200
200
150
700
600
60
60
60
60
60
70
166
166
166
166
166
100
100
100
100
100
4
4
30
30
(5) See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at
specific operating temperature.
(6) See Figure E3.2 and Figure E3.3 for test circuit.
Electrical Isolation
All Teccor isolated Quadrac packages withstand a minimum high
potential test of 2500 V ac rms from leads to mounting tab over
the operating temperature range of the device. The following iso-
lation table shows standard and optional isolation ratings.
(7) ∆VBO = [+ VBO] - [- VBO
]
(8) See Figure E3.7 and Figure E3.8 for maximum allowable case
temperature at maximum rated current.
(9) Trigger firing capacitance = 0.1 µF with 0.1 µs rise time
(10) TC = TJ for test conditions in off state
(11) Maximum required value to ensure sufficient gate current
Electrical Isolation
from Leads to Mounting Tab *
V AC RMS
2500
TYPE
Standard
Optional **
(12) See package outlines for lead form configurations. When ordering
4000
special lead forming, add type number as suffix to part number.
* UL Recognized File #E71639
**For 4000 V isolation, use “V” suffix in part number.
Thermal Resistance (Steady State)
R
[R
] °C/W (TYP)
θJC θJA
TYPE
4 A
6 A
Isolated TO-220
3.6 [50]
3.3
8 A
10 A
15 A
2.8
2.6
2.1
©2004 Teccor Electronics
Thyristor Product Catalog
E3 - 3
http://www.teccor.com
+1 972-580-7777
Quadrac
Data Sheets
20
18
16
14
12
10
8
2.0
1.5
1.0
.5
T = 25 ˚C
C
INITIAL ON-STATE CURRENT
= 200 mA DC 4 A to 10 A
= 400 mA DC 15 A
6 A, 8 A, and 10 A
6
4
4 A
2
0
-40
-15
+25
+65
+105 +125
0
0
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (TC) – ˚C
Positive or Negative
Instantaneous On-state Voltage (vT) – Volts
Figure E3.1 Normalized DC Holding Current versus Case Temperature
Figure E3.4 On-state Current versus On-state Voltage (Typical)
(4 A to 10 A)
90
80
R
L
T
= 25˚C
C
70
60
50
40
30
20
10
0
D.U.T.
MT2
15 A
120 V
60 Hz
T
V
C
MT1
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
C
= 0.1 µF
T
Positive or Negative
Instantaneous On-state Voltage (vT) – Volts
Figure E3.2 Test Circuit
Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)
120
100
V
C
+V
BO
4 A
80
∆V+
60
40
25
20
∆V-
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 2.0
-V
BO
RMS On-state Current [I
] – Amps
T(RMS)
Figure E3.3 Test Circuit Waveforms
Figure E3.6 Maximum Allowable Ambient Temperature versus
On-state Current
http://www.teccor.com
+1 972-580-7777
E3 - 4
©2004 Teccor Electronics
Thyristor Product Catalog
Data Sheets
Quadrac
4.0
3.0
2.0
1.0
0
130
120
110
100
90
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
˚
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
4 A
4 A
80
70
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
60
0
.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
2.0
3.0
4.0
5.0
1.0
RMS On-state Current [I
] – Amps
RMS On-state Current [I
T(RMS)
] – Amps
T(RMS)
Figure E3.7 Maximum Allowable Case Temperature versus
On-state Current (4 A)
Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)
18
16
14
12
130
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
120
110
100
90
CONDUCTION ANGLE: 360
˚
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
15 A
10
15 A
6 A
6 A to 10 A
8
80
10 A
8 A
6
70
4
60
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
2
0
˚
CONDUCTION ANGLE: 360
0
0
2.0
10.0
12.0
14.0
16.0
18.0
20.0
4.0
6.0
8.0
0
2
4
6
8
10
12
14
16
RMS On-state Current [I
] – Amps
T(RMS)
RMS On-state Current [I
] – Amps
T(RMS)
Figure E3.8 Maximum Allowable Case Temperature versus
On-state Current (6 A to 15 A)
Figure E3.11 Power Dissipation (Typical) versus On-state Current
(6 A to 10 A and 15 A)
200
NOTES:
+4
+2
0
1) Gates control may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned to
steady state rated value.
120
100
80
60
50
40
30
20
-2
-4
-6
-8
10
8
6
5
4
3
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
2
RMS ON-STATE CURRENT [I
]: Maximum
T(RMS)
Rated Value at Specified Case Temperature
-40 -20
0
+20 +40 +60 +80 +100 +120 +140
1
1
2
3
4
5
6
8
10
20
3040 60 80 100
200 300
600 1000
Junction Temperature (TJ) – ˚C
Surge Current Duration – Full Cycles
Figure E3.9 Peak Surge Current versus Surge Current Duration
Figure E3.12 Normalized diac V
versus Junction Temperature
BO
©2004 Teccor Electronics
Thyristor Product Catalog
E3 - 5
http://www.teccor.com
+1 972-580-7777
Notes
相关型号:
©2020 ICPDF网 联系我们和版权申明