LM285B-1.2V [TELCOM]
LOW POWER, BANDGAP VOLTAGE REFERENCES; 低功耗，带隙电压参考
| 型号： | LM285B-1.2V |
| 厂家： | 
TELCOM SEMICONDUCTOR, INC |
| 描述： | LOW POWER, BANDGAP VOLTAGE REFERENCES |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
3
LOW POWER, BANDGAP VOLTAGE REFERENCES
FEATURES
GENERAL DESCRIPTION
■ Output Tolerance ....................................... 1% or 2%
■ Output Voltage Option
LM285/385-1.2V ........................................1.235V
LM285/385-2.5V ............................................2.5V
■ Wide Operating Current Range
The LM285/385-1.2V (1.235V output) and LM285/385-
2.5V (2.5V output) are bipolar, two-terminal, bandgap volt-
age references that offer precision performance without
premium price. These devices do not require thin-film re-
sistors, greatly lowering manufacturing complexity and cost.
A 30ppm/°C output temperature coefficient and a 15µA
to 20mA operating current range make these voltage refer-
ences especially attractive for multimeter, data acquisition
and telecommunications applications.
LM285/385-1.2V ........................... 15µA to 20mA
LM285/385-2.5V ........................... 20µA to 20mA
■ Temperature Coefficient .......................... 30ppm/°C
■ Dynamic Impedance .......................................... 0.6Ω
■ TO-92-3 Plastic Package
■ 8-Pin Plastic Narrow Body (SOIC) Package
PIN CONFIGURATIONS
SURFACE MOUNT
8-PIN PLASTIC SOIC
TO-92-3 PLASTIC
(BOTTOM VIEW)
APPLICATIONS
1
2
3
4
8
7
6
5
CATHODE
NC
NC
1
2
3
■ ADC and DAC Reference
■ Current Source Generation
■ Threshold Detectors
■ Power Supplies
NC
NC
NC
ANODE
NC
■ Multi-meters
LM285/285B E0A-1.2
LM285/285B EOA-2.5
LM385/385B COA-1.2
LM385/385B COA-2.5
LM285/285B EZB-1.2
LM285/285B EZB-2.5
LM385/385B CZB-1.2
LM385/385B CZB-2.5
NC = NO INTERNAL CONNECTION
ORDERING INFORMATION
Temperature
Part No.
Package
Range
Voltage
Tolerance
LM285BEOA-1.2
LM285BEOA-2.5
LM285BEZB-1.2
LM285BEZB-2.5
LM285EOA-1.2
LM285EOA-2.5
LM285EZB-1.2
LM285EZB-2.5
LM385BCOA-1.2
LM385BCOA-2.5
LM385BCZB-1.2
LM385BCZB-2.5
LM385COA-1.2
LM385COA-2.5
LM385CZB-1.2
LM385CZB-2.5
8-Pin SOIC
8-Pin SOIC
TO-92-3
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1.2
2.5
1%
1.5%
1%
1.5%
2%
3%
2%
3%
1%
1.5%
1%
1.5%
2%
3%
2%
TO-92-3
8-Pin SOIC
8-Pin SOIC
TO-92-3
TO-92-3
8-Pin SOIC
8-Pin SOIC
TO-92-3
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
TO-92-3
8-Pin SOIC
8-Pin SOIC
TO-92-3
TO-92-3
3%
LM285/B/385/B-9 11/6/96
TELCOM SEMICONDUCTOR, INC.
3-9
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
ABSOLUTE MAXIMUM RATINGS*
Lead Temperature (Soldering, 10 sec)
TO-92 Package .............................................. +300°C
Surface Mount Package ................................. +300°C
Power Dissipation
Limited by Forward/Reverse Current
*Functional operation above the absolute maximum stress ratings is not
implied.
Forward Current .................................................... +10mA
Reverse Current.................................................... +30mA
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature Range
TO-92 Package ................................ – 40°C to +85°C
Surface Mount Package ................... – 40°C to +85°C
ELECTRICAL CHARACTERISTICS: TA = +25°C, unless otherwise specified.
LM285 / LM285B–1.2
LM385 / LM385B–1.2
Symbol Parameter
Test Conditions
Min
Typ Max
Min
Typ Max
Unit
V(BR)R
Reverse Breakdown Voltage
I
R ≤ 20mA
V
LM285B-1.2/LM385B-1.2
TA = Tlow to Thigh (Note 1)
LM285-1.2V/LM385-1.2V
TA = Tlow to Thigh (Note 1)
1.223
1.200
1.205
1.192
1.235 1.247
1.223
1.210
1.205
1.192
1.235 1.247
—
1.270
—
1.260
1.235 1.260
1.235 1.260
—
1.273
—
1.273
IRMIN
Minimum Operating Current
TA = +25°C
TA = Tlow to Thigh (Note 1)
µA
—
—
8.0
—
15
20
—
—
8.0
—
15
20
∆V(BR)R
Reverse Breakdown Voltage
Change with Current
mV
IRmin = IR = 1.0mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
1.0mA = IR = 20mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
—
—
—
—
—
—
—
—
1.0
1.5
10
—
—
—
—
—
—
—
—
1.0
1.5
20
20
25
Z
Reverse Dynamic Impedance
IR = 100µA
—
—
—
0.6
30
20
—
100
—
—
—
—
0.6
30
20
—
100
—
Ω
∆V(BR)/∆T Average Temperature Coefficient 10µA ≤ IR ≤ 20mA
ppm/°C
ppm/kHR
S
Long Term Stability
IR = 100µA,
TA = +25°C ±0.1°C
LM285 / LM285B–2.5
LM385 / LM385B–2.5
Symbol Parameter
Test Conditions
Min
Typ Max
Min
Typ Max
Unit
V(BR)R
Reverse Breakdown Voltage
IR = 20mA
V
LM285B-2.5/LM385B-2.5
TA = Tlow to Thigh (Note 1)
LM285-2.5V/LM385-2.5V
TA = Tlow to Thigh (Note 1)
2.462
2.415
2.425
2.400
2.5
—
2.5
—
2.538
2.585
2.575
2.600
2.462
2.436
2.425
2.400
2.5
—
2.5
—
2.538
2.564
2.575
2.600
IRMIN
Minimum Operating Current
TA = +25°C
TA = Tlow to Thigh (Note 1)
µA
—
—
13
—
20
30
—
—
13
—
20
30
∆V(BR)R
Reverse Breakdown Voltage
Change with Current
mV
IRmin = IR = 1.0mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
1.0mA = IR = 20mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
—
—
—
—
—
—
—
—
1.0
1.5
10
—
—
—
—
—
—
—
—
2.0
2.5
20
20
25
Z
Reverse Dynamic Impedance
IR = 100µA
—
—
—
0.6
30
20
—
100
—
—
—
—
0.6
30
20
—
100
—
Ω
∆V(BR)/∆T Average Temperature Coefficient 20µA ≤ IR ≤ 20mA
ppm/°C
ppm/kHR
S
Long Term Stability
IR = 100µA,
TA = +25°C ±0.1°C
Note: 1. Tlow = – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
Thigh = +85°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
3-10
TELCOM SEMICONDUCTOR, INC.
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
3
TYPICAL APPLICATIONS
10V Reference
Battery Powered 1.25V Reference
Precision Current Source
+15V
50 kΩ
LM285/385-1.2V
+9V
7
3
2
+
6
360 kΩ
V
= 10V
OUT
+15V
7
1 µF
6
TC911
–
4
81 kΩ
1.25V
2
3
2.5V
–
LM285/385
-2.5V
180 kΩ
TC911
+
4
LM285/385-1.2V
R
SET
60 kΩ
0.1 µF
1.25V
I
=
OUT
R
SET
RESPONSE TIME TEST CIRCUIT
36 kΩ
OUTPUT
INPUT
LM285/385-1.2V
LM285/385-2.5V
TELCOM SEMICONDUCTOR, INC.
3-11
LOW POWER, BANDGAP
VOLTAGE REFERENCES
LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
TYPICAL CHARACTERISTICS
LM285/385-1.2V: Output Voltage vs
Reverse Current
LM285/385-1.2V: Output Voltage Change
vs Reverse Current
LM285/385-1.2V: Forward Voltage vs
Forward Current
10
8
1.2
1000
T
= +25°C
T
= +25°C
A
A
T
= +25°C
A
1.0
0.8
0.6
0.4
0.2
0
100
10
1
6
4
2
0
0.1
0
0.25 0.5 0.75 1.0 1.25
OUTPUT VOLTAGE (V)
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1.5
FORWARD CURRENT (mA)
REVERSE CURRENT (mA)
LM285/385-2.5V: Output Voltage vs
Reverse Current
LM285/385-1.2V
Response Time
LM285/385-2.5V: Output Voltage Change
vs Reverse Current
1000
100
10
10
10.0
5.0
T
= +25°C
A
T
= +25°C
A
T
= +25°C
A
8
INPUT
0
1.5
1.0
0.5
0
6
4
OUTPUT
1
2
0
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
0.1
1
10
100
0
200
400
600
TIME (µsec)
OUTPUT VOLTAGE (V)
REVERSE CURRENT (mA)
LM285/385-2.5V
Response Time
LM285/385-2.5V: Forward Voltage vs
Forward Current
10
1.2
1.0
0.8
0.6
0.4
0.2
0
T
= +25°C
T
= +25°C
A
A
5
0
INPUT
OUTPUT
200
3
2
1
0
0.01
0.1
1
10
100
0
400
600
FORWARD CURRENT (mA)
TIME (µsec)
3-12
TELCOM SEMICONDUCTOR, INC.
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