TC4428 [TELCOM]
1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS; 1.5A双高速，功率MOSFET驱动器
| 型号： | TC4428 |
| 厂家： | 
TELCOM SEMICONDUCTOR, INC |
| 描述： | 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS |
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4
TC4426
TC4427
TC4428
1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
GENERAL DESCRIPTION
FEATURES
The TC4426/4427/4428 are improved versions of the
earlier TC426/427/428 family of buffer/drivers (with which
they are pin compatible). They will not latch up under any
conditions within their power and voltage ratings. They are
not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4kV of
electrostatic discharge.
As MOSFET drivers, the TC4426/4427/4428 can easily
switch 1000 pF gate capacitances in under 30nsec, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.
■ High Peak Output Current ............................... 1.5A
■ Wide Operating Range ..........................4.5V to 18V
■ High Capacitive Load
Drive Capability ........................ 1000 pF in 25 nsec
■ Short Delay Time ................................ <40nsec Typ
■ Consistent Delay Times With Changes in
Supply Voltage
■ Low Supply Current
— With Logic “1” Input .................................... 4mA
— With Logic “0” Input ................................. 400µA
■ Low Output Impedance ....................................... 7Ω
■ Latch-Up Protected: Will Withstand >0.5A
Reverse Current................................. Down to – 5V
■ Input Will Withstand Negative Inputs
■ ESD Protected.....................................................4kV
■ Pinout Same as TC426/TC427/TC428
Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nanoseconds range. They are pin
compatible with the TC4426/27/28.
ORDERING INFORMATION
Temperature
Part No.
Package
Range
FUNCTIONAL BLOCK DIAGRAM
TC4426COA
TC4426CPA
TC4426EOA
TC4426EPA
TC4426MJA
8-Pin SOIC
0°C to +70°C
0°C to +70°C
V
DD
8-Pin Plastic DIP
8-Pin SOIC
INVERTING
OUTPUTS
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
8-Pin Plastic DIP
8-Pin CerDIP
300 mV
OUTPUT
TC4427COA
TC4427CPA
TC4427EOA
TC4427EPA
TC4427MJA
8-Pin SOIC
0°C to +70°C
0°C to +70°C
NONINVERTING
OUTPUTS
8-Pin Plastic DIP
8-Pin SOIC
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
INPUT
GND
4.7V
8-Pin Plastic DIP
8-Pin CerDIP
TC4426/TC4427/TC4428
TC4428COA
TC4428CPA
TC4428EOA
TC4428EPA
TC4428MJA
8-Pin SOIC
0°C to +70°C
0°C to +70°C
EFFECTIVE INPUT
C = 12 pF
8-Pin Plastic DIP
8-Pin SOIC
NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.
2. TC4428 has one inverting and one noninverting driver.
3. Ground any unused driver input.
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
8-Pin Plastic DIP
8-Pin CerDIP
TC4426/7/8-8 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-245
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B. (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
PIN CONFIGURATIONS
NC
1
2
3
4
NC
IN A
GND
IN B
1
2
3
4
NC
IN A
GND
IN B
1
2
3
4
8
7
6
5
8
7
6
5
NC
8
7
6
5
NC
NC
IN A
GND
OUT A
OUT A
OUT A
TC4426
TC4427
TC4428
V
V
V
DD
DD
DD
OUT B
OUT B
IN B
OUT B
2
4
7
5
2,4
7,5
2,4
7,5
INVERTING
NONINVERTING
DIFFERENTIAL
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
1
V
VIL
V
IIN
0V ≤ VIN ≤ VDD
– 1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
VDD – 0.025
—
—
7
—
0.025
10
V
V
Ω
A
A
—
—
VDD = 18V, IO = 10 mA
IPK
Duty Cycle ≤ 2%, t ≤ 30 µsec
Duty Cycle ≤ 2%
t ≤ 30 µsec
—
1.5
—
—
IREV
Latch-Up Protection
Withstand Reverse Current
> 0.5
—
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
19
19
20
40
30
30
30
50
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
tD2
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
4.5
0.4
mA
mA
NOTE: 1. Switching times are guaranteed by design.
4-246
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
4
TC4426
TC4427
TC4428
ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature
range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
VIL
V
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
VDD – 0.025
—
—
9
—
0.025
12
V
V
Ω
A
A
—
—
VDD = 18V, IO = 10 mA
IPK
Duty Cycle ≤ 2%, t ≤ 300µsec
Duty Cycle≤ 2%
t ≤ 300µsec
—
1.5
—
—
IREV
Latch-Up Protection
> 0.5
—
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
—
—
—
—
40
40
40
60
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
tD2
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
8
mA
0.6
NOTE: 1. Switching times are guaranteed by design.
Crossover Energy Loss
–8
10
+5V
9
8
7
6
90%
INPUT
10%
0V
t
t
V
= 18V
DD
D1
D2
t
5
4
F
t
R
V
DD
90%
90%
4.7 µF
0.1 µF
OUTPUT
0V
6
3
10%
10%
5,7
2,4
INPUT
OUTPUT
= 1000 pF
Inverting Driver
C
L
2
+5V
90%
INPUT
–9
10
10%
3
0V
4
6
8
10
12
14
16
18
V
V
DD
90%
DD
90%
t
t
D1
D2
INPUT: 100 kHz, square wave,
= t ≤ 10ns
t
t
Thermal Derating Curves
F
OUTPUT
0V
R
t
RISE FALL
1600
1400
1200
1000
800
10%
10%
8 Pin DIP
Noninverting Driver
8 Pin CerDIP
8 Pin SOIC
Figure 1. Switching Time Test Circuit
600
400
200
0
NOTE: The values on this graph represent the loss seen by both drivers in a package
during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.
30
40
70
80
90
100
110
120
10
20
50
60
0
AMBIENT TEMPERATURE (°C)
TELCOM SEMICONDUCTOR, INC.
4-247
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
Fall Time vs. Supply Voltage
100
100
80
2200 pF
2200 pF
TA = 25°C
TA = 25°C
80
1500 pF
1500 pF
60
60
40
1000 pF
1000 pF
40
470 pF
470 pF
100 pF
20
20
0
100 pF
0
14
16
18
14
16
18
4
6
8
10
12
DD
4
6
8
10
12
DD
V
V
Fall TIme vs. Capacitive Load
Rise TIme vs. Capacitive Load
100
80
100
5V
5V
TA = 25°C
TA = 25°C
80
60
40
10V
15V
60
40
10V
15V
20
0
20
0
100
1000
(pF)
10,000
100
1000
10,000
C
C
(pF)
LOAD
LOAD
Rise and Fall Times vs. Temperature
Propagation Delay vs. Supply Voltage
60
60
50
40
C
V
= 1000 pF
C
= 1000 pF
LOAD
LOAD
tD2
= 17.5V
DD
50
40
30
TA = 25°C
t
D1
30
20
10
t
FALL
20
10
t
RISE
–55 –35 –15
5
25 45 65 85 105 125
14
16
18
4
6
8
10
12
DD
V
TEMPERATURE (°C)
4-248
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
4
TC4426
TC4427
TC4428
TYPICAL CHARACTERISTICS (Cont.)
Effect of Input Amplitude on Delay Time
Propagation Delay Time vs. Temperature
60
60
V
= 18V
C
V
= 1000 pF
DD
LOAD
= 10V
V
= 1000 pF
LOAD
50
40
30
50
DD
t
D2
40
30
t
D2
t
D1
t
20
10
20
10
D1
4
0
2
6
8
10
–55 –35 –15
5
25 45 65 85 105 125
(°C)
V
(V)
T
DRIVE
A
Quiescent Supply Current vs. Voltage
Quiescent Supply Current vs. Temperature
4.0
3.5
3.0
2.5
2.0
T
A
= +25°C
V
= 18V
DD
BOTH INPUTS = 1
1
BOTH INPUTS = 1
BOTH INPUTS = 0
0.1
–55 –35 –15
5
25 45 65 85 105 125
4
6
8
10
12
14
16
18
V
T
(°C)
A
DD
High-State Output Resistance
Low-State Output Resistance
25
20
15
25
20
15
WORST CASE @ T = +150°C
WORST CASE @ T = +150°C
J
J
TYP @ T = +25°C
TYP @ T = +25°C
A
A
10
8
10
8
5
5
14
16
18
14
16
18
4
6
8
10
12
4
6
8
10
12
DD
V
V
DD
TELCOM SEMICONDUCTOR, INC.
4-249
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
60
2 MHz
1000 pF
2200 pF
V
= 18V
V = 18V
DD
DD
50
40
30
20
50
40
30
20
900 kHz
600 kHz
100 pF
200 kHz
20 kHz
10
10
0
0
100
1000
(pF)
10,000
10
100
FREQUENCY (kHz)
1000
C
LOAD
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
60
2200 pF
= 12V
2 MHz
V
= 12V
V
DD
DD
50
40
30
20
50
40
30
20
1000 pF
100 pF
900 kHz
600 kHz
10
10
0
200 kHz
20 kHz
0
100
1000
(pF)
10,000
10
100
1000
C
FREQUENCY (kHz)
LOAD
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
60
60
V
= 6V
V
= 6V
DD
DD
50
40
30
20
50
40
30
20
2200 pF
100 pF
2 MHz
1000 pF
900 kHz
600 kHz
200 kHz
20 kHz
10
10
0
0
100
1000
(pF)
10,000
10
100
FREQUENCY (kHz)
1000
C
LOAD
4-250
TELCOM SEMICONDUCTOR, INC.
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