TC4467 [TELCOM]
LOGIC-INPUT CMOS QUAD DRIVERS; 逻辑输入CMOS Quad驱动程序
| 型号： | TC4467 |
| 厂家： | 
TELCOM SEMICONDUCTOR, INC |
| 描述： | LOGIC-INPUT CMOS QUAD DRIVERS |
| 文件： | 总9页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4
TC4467
TC4468
TC4469
LOGIC-INPUT CMOS QUAD DRIVERS
GENERAL DESCRIPTION
FEATURES
The TC446X family of four-output CMOS buffer/drivers
are an expansion from our earlier single- and dual-output
drivers. Each driver has been equipped with a two-input
logic gate for added flexibility.
The TC446X drivers can source up to 250 mA into loads
referenced to ground. Heavily loaded clock lines, coaxial
cables, and piezoelectric transducers can all be easily
driven with the 446X series drivers. The only limitation on
loading is that total power dissipation in the IC must be kept
within the power dissipation limits of the package.
The TC446X series will not latch under any conditions
within their power and voltage ratings. They are not subject
to damage when up to 5V of noise spiking (either polarity)
occursonthegroundline. Theycanacceptuptohalfanamp
of inductive kickback current (either polarity) into their out-
puts without damage or logic upset. In addition, all terminals
are protected against ESD to at least 2000V.
■ High Peak Output Current ............................... 1.2A
■ Wide Operating Range ............................ 4.5 to 18V
■ Symmetrical Rise and Fall Times................25nsec
■ Short, Equal Delay Times ............................75nsec
■ Latchproof! Withstands 500mA Inductive Kickback
■ 3 Input Logic Choices
— AND / NAND / AND + Inv
■ 2kV ESD Protection on All Pins
APPLICATIONS
■ General-Purpose CMOS Logic Buffer
■ Driving All Four MOSFETs in an H-Bridge
■ Direct Small Motor Driver
■ Relay or Peripheral Drivers
■ CCD Driver
■ Pin-Switching Network Driver
ORDERING INFORMATION
Part No.
Package
Temp. Range
TC446xCOE
TC446xCPD
TC446xEJD
TC446xMJD
16-Pin SOIC (Wide)
14-Pin Plastic DIP
14-Pin CerDIP
0° to +70°C
0° to +70°C
– 40° to +85°C
– 55° to +125°C
14-Pin CerDIP
x indicates a digit must be added in this position to define the device
input configuration: TC446x — 7
NAND
AND
AND with INV
8
9
LOGIC DIAGRAMS
V
V
V
TC446X
TC4468
TC4469
TC4467
DD
14
DD
14
DD
14
V
DD
1
1
1
1A
2
1A
13
12
11
10
13
12
11
10
1A
2
13
12
11
10
1Y
2Y
3Y
4Y
1Y
1Y
2Y
3Y
4Y
2
1B
1B
1B
3
3
4
3
2A
4
2A
2B
2A
4
OUTPUT
2Y
3Y
4Y
2B
2B
5
5
6
5
3A
6
3A
3B
3A
6
3B
3B
8
8
9
8
4A
9
4A
4B
4A
9
4B
4B
7
7
7
GND
GND
GND
TC4467/8/9-6 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-261
LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Package Thermal Resistance
ABSOLUTE MAXIMUM RATINGS*
14-Pin CerDIP
RθJ-A ...................................... 100°C/W
RθJ-C ......................................... 23°C/W
Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (VDD + 0.3V)
Maximum Chip Temperature
Operating ........................................................ +150°C
Storage ............................................. – 65° to +150°C
Maximum Lead Temperature
14-Pin Plastic DIP RθJ-A ......................................... 80°C/W
RθJ-C ......................................... 35°C/W
16-Pin Wide SOIC RθJ-A ......................................... 95°C/W
RθJ-C ......................................... 28°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
(Soldering, 10 sec) ......................................... +300°C
Operating Ambient Temperature Range
C Device .................................................. 0° to +70°C
E Device ............................................. – 40° to +85°C
M Device........................................... – 55° to +125°C
Package Power Dissipation (TA ≤ 70°C)
14-Pin CerDIP ................................................840mW
14-Pin Plastic DIP...........................................800mW
16-Pin Wide SOIC ..........................................760mW
ELECTRICAL CHARACTERISTICS: Measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
Note 3
2.4
0
—
—
—
VDD
0.8
1
V
VIL
Note 3
V
IIN
0V ≤ VIN ≤ VDD
– 1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
ILOAD = 100µA (Note 1)
ILOAD = 10mA (Note 1)
IOUT = 10mA, VDD = 18V
VDD – 0.025
—
—
—
0.15
15
V
—
—
—
—
V
10
1.2
—
Ω
IPK
Peak Output Current
Continuous Output Current
—
A
IDC
Single Output
Total Package
300
500
mA
I
Latch-Up Protection
4.5V ≤ VDD ≤ 16V
500
—
—
mA
Withstand Reverse Current
Switching Time
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
15
15
40
40
25
25
75
75
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
tD2
Power Supply
IS
Power Supply Current
Power Supply Voltage
—
1.5
—
4
mA
V
VDD
Note 2
4.5
18
TRUTH TABLE
Part No.
TC4467 NAND
TC4468 AND
TC4469 AND/INV
INPUTS A
INPUTS B
H
H
H
L
L
H
L
L
H
H
H
L
L
H
L
L
H
H
H
L
L
H
L
L
OUTPUTS TC446X
L
H
H
H
H
L
L
L
L
H
L
L
H = High L = Low
4-262
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS
QUAD DRIVERS
4
TC4467
TC4468
TC4469
ELECTRICAL CHARACTERISTICS: Measured throughout operating temperature range with 4.5V ≤ VDD ≤ 18V,
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
(Note 3)
2.4
—
—
—
—
—
0.8
10
V
VIL
(Note 3)
V
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
ILOAD = 100 µA (Note 1)
ILOAD = 10 mA (Note 1)
IOUT = 10 mA, VDD = 18V
VDD – 0.025
—
—
—
0.30
30
V
—
—
V
20
1.2
—
Ω
IPK
—
—
A
I
Latch-Up Protection
4.5V ≤ VDD ≤ 16V
500
—
mA
Withstand Reverse Current
Switching Time
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
—
—
—
—
50
50
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
100
100
tD2
Power Supply
IS
IS
Power Supply Current
Power Supply Voltage
—
—
—
8
mA
V
Note 2
4.5
18
NOTES: 1. Totem-pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device.
2. When driving all four outputs simultaneously in the same direction, VDD shall be limited to 16V. This reduces the chance that internal
dv/dt will cause high-power dissipation in the device.
3. The input threshold has about 50 mV of hysteresis centered at approximately 1.5V. Slow moving inputs will force the device to
dissipate high peak currents as the input transitions through this band. Input rise times should be kept below 5 µs to avoid high internal
peak currents during input transitions. Static input levels should also be maintained above the maximum or below the minimum input
levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
PIN CONFIGURATIONS
16-Pin SOIC (Wide)
14-Pin Plastic DIP/CerDIP
1A
1B
V
DD
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1A 1
1B 2
2A 3
2B 4
14 V
DD
V
DD
13 1Y
2A
1Y
2Y
3Y
4Y
4B
4A
12 2Y
11 3Y
10 4Y
2B
TC4467/8/9
TC4467/8/9
3A
3B
3A 5
3B 6
GND
GND
9
8
4B
4A
GND 7
TELCOM SEMICONDUCTOR, INC.
4-263
LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Supply Bypassing
Three components make up total package power
dissipation:
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18V in 25nsec requires 0.72A from the
device's power supply.
(1) Load-caused dissipation (PL)
(2) Quiescent power (PQ)
(3) Transition power (PT).
To guarantee low supply impedance over a wide fre-
quencyrange,a1µFfilmcapacitorinparallelwithoneortwo
low-inductance 0.1 µF ceramic disk capacitors with short
lead lengths (<0.5 in.) normally provide adequate bypass-
ing.
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load, and
supply voltage. The power dissipation is:
2
PL = f C VS ,
Grounding
where: f = Switching frequency
C = Capacitive load
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground impedances
from input to output will appear as negative feedback and
degradeswitchingspeedcharacteristics.Instead,individual
ground returns for input and output circuits, or a ground
plane, should be used.
VS = Supply voltage.
A resistive-load-caused dissipation for ground-refer-
enced loads is a function of duty cycle, load current, and
load voltage. The power dissipation is:
Input Stage
PL = D (VS – VL) IL,
The input voltage level changes the no-load or quies-
cent supply current. The N-channel MOSFET input stage
transistor drives a 2.5 mA current source load. With logic "0"
outputs, maximum quiescent supply current is 4 mA. Logic
"1" output level signals reduce quiescent current to 1.4 mA
maximum. Unused driver inputs must be connected to VDD
or VSS. Minimum power dissipation occurs for logic "1"
outputs.
The drivers are designed with 50 mV of hysteresis. This
provides clean transitions and minimizes output stage cur-
rent spiking when changing states. Input voltage thresholds
are approximately 1.5V, making any voltage greater than
1.5V up to VDD a logic 1 input . Input current is less than 1 µA
over this range.
where: D = Duty cycle
VS = Supply voltage
VL = Load voltage
IL = Load current.
A resistive-load-caused dissipation for supply-refer-
enced loads is a function of duty cycle, load current, and
output voltage. The power dissipation is:
PL = D VO IL,
where: f = Switching frequency
VO = Device output voltage
IL = Load current.
Power Dissipation
Thesupplycurrentversusfrequencyandsupplycurrent
versus capacitive load characteristic curves will aid in deter-
mining power dissipation calculations. TelCom Semicon-
ductor's CMOS drivers have greatly reduced quiescent DC
power consumption.
Input signal duty cycle, power supply voltage and load
type, influence package power dissipation. Given power
dissipation and package thermal resistance, the maximum
ambient operating temperature is easily calculated. The 14-
pin plastic package junction-to-ambient thermal resistance
is 83.3°C/W. At +70°C, the package is rated at 800mW
maximum dissipation. Maximum allowable chip tempera-
ture is +150°C.
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain (all
devicesdriven).LogicLOWoutputsraisethecurrentto4mA
maximum. The quiescent power dissipation is:
PQ = VS (D (IH) + (1–D)IL),
where: IH = Quiescent current with all outputs LOW
(4 mA max)
IL = Quiescent current with all outputs HIGH
(0.6 mA max)
D = Duty cycle
VS =Supply voltage.
4-264
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS
QUAD DRIVERS
4
TC4467
TC4468
TC4469
Transition power dissipation arises in the
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
Maximum operating temperature:
TJ – θJA (PD) = 141°C,
where: TJ = Maximum allowable junction temperature
(+150°C)
θJA = Junction-to-ambient thermal resistance
(83.3°C/W) 14-pin plastic package.
PT = f VS (10 ϫ 10–9).
NOTE: Ambient operating temperature should not exceed +85°C for
"EJD" device or +125°C for "MJD" device.
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
the relative magnitude for each term:
C = 1000 pF capacitive load
VS = 15V
D = 50%
f
= 200 kHz
PD = Package Power Dissipation = PL + PQ + PT
= 45 mW + 35 mW + 30 mW = 110 mW.
V
DD
1 µF FILM
0.1 µF CERAMIC
V
+5V
14
90%
1
1A
13
12
11
10
OUT
2
INPUT
(A, B)
470 pF
1B
3
2A
10%
0V
4
2B
V
DD
90%
90%
5
3A
t
t
D1
D2
6
t
t
F
R
OUTPUT
0V
3B
8
4A
10%
10%
9
4B
Input: 100 kHz, square wave,
RISE = tFALL ≤ 10nsec
7
t
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-265
LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
TYPICAL CHARACTERISTICS
Fall Time vs. Supply Voltage
Rise Time vs. Supply Voltage
140
140
120
100
80
2200 pF
120
2200 pF
1500 pF
100
1600 pF
80
1000 pF
1000 pF
60
60
40
40
20
0
470 pF
100 pF
470 pF
100 pF
20
0
19
3
5
7
9
11
13
(V)
15
17
19
10,000
18
3
5
7
9
11
13
(V)
15
17
V
V
SUPPLY
SUPPLY
Rise Time vs. Capacitive Load
Fall Time vs. Capacitive Load
140
120
100
140
120
5V
5V
100
80
80
60
40
10V
15V
10V
15V
60
40
20
0
20
0
10,000
100
1000
100
1000
C
(pF)
C
(pF)
LOAD
LOAD
Rise/Fall Times vs. Temperature
Propagation Delay Time vs. Supply Voltage
80
60
40
20
0
25
20
V
C
= 17.5V
= 470 pF
SUPPLY
LOAD
C
= 470 pF
LOAD
t
t
(FALL)
t
D1
15
10
5
(RISE)
t
D2
0
4
6
8
10
V
12
(V)
14
16
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
SUPPLY
4-266
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS
QUAD DRIVERS
4
TC4467
TC4468
TC4469
TYPICAL CHARACTERISTICS (Cont.)
Input Amplitude vs. Delay Times
Propagation Delay Times vs. Temperature
140
70
60
50
40
30
20
V
DD
= 12V
V
= 17.5V
DD
120
100
80
60
40
20
0
C
V
= 470 pF
INPUT RISING
LOAD
t
D1
t
= 0, 5V
IN
t
D2
D2
t
D1
7
INPUT FALLING
10
1
2
3
4
5
6
8
9
120
–60 –40 –20
0
20
40
60
80
100
V
(V)
TEMPERATURE (°C)
DRIVE
Quiescent Supply Current vs. Temperature
Quiescent Supply Current vs. Supply Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.5
V
= 17.5V
DD
2.0
1.5
1.0
OUTPUTS = 0
OUTPUTS LOW
OUTPUTS HIGH
OUTPUTS = 1
0.5
0
120
–60 –40 –20
0
20
40
(°C)
60
80
100
4
6
8
10
12
(V)
14
16
18
T
V
JUNCTION
SUPPLY
Low-State Output Resistance
High-State Output Resistance
35
30
25
20
15
10
5
35
30
25
T = +150°C
J
20
15
10
5
T = +150°C
J
T = +25°C
J
T = +25°C
J
0
0
4
6
8
10
12
(V)
14
16
18
4
6
8
10
12
(V)
14
16
18
V
V
SUPPLY
SUPPLY
TELCOM SEMICONDUCTOR, INC.
4-267
LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 18V
V
= 18V
DD
DD
2200 pF
1000 pF
2 MHz
1 MHz
500 kHz
200 kHz
100 pF
20 kHz
1000
10
100
1000
10,000
10,000
10,000
10,000
100
FREQUENCY (kHz)
C
(pF)
LOAD
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
50
60
50
40
30
20
10
V
= 12V
DD
2 MHz
V
= 12V
2200 pF
DD
40
30
20
10
0
1 MHz
1000 pF
100 pF
500 kHz
200 kHz
20 kHz
0
100
1000
1000
10,000
10
100
C
(pF)
FREQUENCY (kHz)
LOAD
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
50
40
30
20
10
0
60
50
40
V
= 6V
V
DD
= 6V
DD
2200 pF
2 MHz
30
20
10
1000 pF
100 pF
1 MHz
500 kHz
200 kHz
20 kHz
0
100
1000
100
10
1000
10,000
C
(pF)
FREQUENCY (kHz)
LOAD
4-268
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS
QUAD DRIVERS
4
TC4467
TC4468
TC4469
TYPICAL APPLICATIONS
Stepper Motor Drive
Quad Driver for H-Bridge Motor Control
+12V
+5V TO +15V
14
14
AIRPAX
#M82102-P2
7.5°/STEP
18V
TC4469
1
TC4469
1
13
12
11
10
RED
13
2
2
DIRECTION
3
MOTOR
12
REV
3
4
4
FWD
GRAY
YEL
A
B
5
PWM SPEED
11
10
M
MOTOR
6
5
6
8
9
8
9
7
BLK
7
48-Volt, 3-Phase Brushless Output Stage
48V
R4
3.3
kΩ
R2
3.3
kΩ
R3
C1
1 µF
14
3.3
V
kΩ
DD
1
D1
1N4744
15V
1A
1B
2A
2B
3A
13
12
11
10
2
3
4
5
1Y
2Y
R1
3.3
kΩ
5W
U1
6
8
9
3Y
4Y
3B
4A
4B
D2
D3
D4
TC4469
GND
R5
7
MOTOR
PHASE A
MOTOR
MOTOR
R9
(FLOAT AT 33V)
PHASE C
PHASE B
Q1
A+
B+
C+
A–
B–
15V
14
R6
4.7 kΩ
2N5550
R10
R7
V
DD
Q2
1
1A
13
4.7 kΩ
2
3
4
5
2N5550
1Y
2Y
1B
2A
2B
3A
R11
Q3
12
11
10
4.7 kΩ
U2
2N5550
6
8
9
3Y
4Y
3B
4A
4B
TC4469
GND
7
C–
TELCOM SEMICONDUCTOR, INC.
4-269
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