DH50204 [TEMEX]
Pin Diode, 200V V(BR), Silicon, F27D, 2 PIN;
| 型号： | DH50204 |
| 厂家： | 
TEMEX |
| 描述： | Pin Diode, 200V V(BR), Silicon, F27D, 2 PIN |
| 文件： | 总56页 (文件大小：641K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE SILICON COMPONENTS
Contents
MICROWAVE SILICON COMPONENTS
CONTENTS
CONTENTS
PAGE
INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2
SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4
SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28
TUNING VARACTORS DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-31
POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40
CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47
MOS CAPACITORS: Please consult page 7-39 of this catalog
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MICROWAVE SILICON COMPONENTS
Introduction
INTRODUCTION
This part of the Microwave section presents TEMEX product lines including:
•
•
•
•
•
•
receiving diodes
control diodes
tuning varactors
m ultiplier varactors
step recovery diodes
high voltage PIN diodes
TEMEX products are available in a com plete assortm ent of packages including:
•
•
•
•
•
chips
standard
surface m ount ceram ic and plastic
non m agnetic
custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point ofTEMEX product m anufacturing. From the virgin wafer,
TEMEX perform s all functions, including:
•
•
•
•
•
•
•
•
epitaxy
diffusion
photom asking
m etallization
passivation
dicing
packaging
control and burn-in
TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky m etallurgies, all
junction passivations, and all m esa operations.
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MICROWAVE SILICON COMPONENTS
Sym bols
SYMBOLS
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case Capacitance
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Capacitance
Total Capacitance
j
CT
CX/C
f
Tuning Ratio
y
Test Frequency
FCO
FI
Cut-off Frequency
Frequency Input
FIF
FO
F
Interm ediate Frequency
Output Frequency
Operating frequency
Forward Continuous Current
Reverse Continuous Current
Reverse Pulse Current
Conversion Loss
oper
IF
IR
IRP
L
N/A
NFSSB
NFIF
Not Applicable
Single Sideband Noise Figure
Noise Figure of Interm ediate Frequency
Gold Contact Diam eter
CW Power Capability
Power Dissipation
PCW
P
diss
P
Power Input
in
PL
Lim iting Threshold
PLO
PO
Local Oscillator Power
Output Power
PRF
RF Power
Q
Figure of Merit
-X
RSF
Forward Series Resistance
Therm al Resistance
Video Resistance
R
th
RV
τI
TCR
Minority Carrier Lifetim e
Reverse Switching Tim e
Junction Tem perature
Snap-offTim e
T
j
tSO
TSS
VBR
Tangential Sensitivity
Breakdown Voltage
V
F
V
R
Forward Continuous Voltage
Applicable Voltage (RF + bias)
Voltage Standing Wave Ratio
Forward Threshold Voltage
Threshold Voltage
VSWR
VT
VTO
ZIF
Im pedance at Interm ediate Frequency
Output Im pedance
ZO
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SILICON PIN DIODES
Selection guide
SILICON PIN DIODES
Selection Guide
PAGE
HOW TO SPECIFY A PIN DIODE?
12-5
SURFACE MOUNT PACKAGE
- PLASTIC PACKAGE SWITCHING SILICON PIN DIODES
- PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES
- LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
- SQUARE CERAMIC PIN DIODES
12-6
12-8
12-10
12-12
12-15
- NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES
HIGH VOLTAGE PIN DIODES
12-17
12-18
12-20
- SWITCHING & PHASE SHIFTING APPLICATIONS
- TWO AND THREE PORTS RF PIN SWITCH MODULES
MICROWAVE APPLICATIONS
12-22
12-23
12-24
12-25
12-26
- ULTRAFAST SWITCHING SILICON PIN DIODES
- FAST SWITCHING SILICON PIN DIODES
- ATTENUATOR SILICON PIN DIODES
- SILICON LIMITER PIN DIODES
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SILICON PIN DIODES
How to specify a PIN diode
HOW TO S P ECIFY A P IN DIODE ?
To obtain the PIN diodes best suited for a specific application, consider the following:
1. Application
8. Maxim um loss expected
•
•
•
switch
9. Minim um isolation needed
10. VSWR and distortion requirements
attenuator
lim iter
11. Power applied to the diode
2. Frequency and bandwidth requirements
•
•
•
forward biased
reverse biased
during switching
3. Power characteristics
•
•
•
peak
average
12.Static characteristics
pulse duration and duty cycle
•
•
applicable voltage: V
R
4. Sw itching tim e
5. Bias conditions
total capacitance: C
T
(in space charge)
•
•
forward
reverse
•
forward series resistance: R
SF
•
•
carrier lifetim e τl
6. Circuit im pedance
therm al resistance: R
th
13.Mechanical and packaging constraints
7. Shunt or series assem bly
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SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
P LASTIC PACKAGE S URFACE MOUNT S WITCHING
S ILICON P IN DIODES
Description
TEMEX uses its proprietary technology to m anufacture its Silicon PIN diodes in plastic package.
This product fam ily is designed for a low cost, m edium to high volum e m arket that m ay be supplied
in tape and reel for autom ated pick and place assem bly on surface m ount circuit boards.
The use of this technology elim inates wire bonding on to the chips.
Applications
The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF)
and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching
tim e and low switching current.
TEMEX’ diodes are designed to cover a broad range of CW low power (up to 2 W), m edium peak
power, RF and m icrowave applications (up to 3 GHz).
Main applications include: SPST and SPDT switches, antenna (Wireless Com m unication System s)
and filter switches, phase shifters ....
Note: To reduce the distortion, it is necessary to verify and design with the following form ula:
Î
HF
πτl I
F
DC
<< 1
Î
:
:
:
RF peak current (A)
HF
τl
Diode m inority carrier lifetim e (s)
DC bias current (A)
I
DC
πF :
Application frequency (Hz)
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SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
Characteristics @ Ta = +25° C
PACKAGED DIODES
Breakdown
Total
Series
Minority carrier
(1)
(2)
voltage (V
)
capacitance (CT
F = 1 MHz
)
resistance (RSF)
lifetime (τI)
BR
IF = 10 mA
IF = 10 mA
Test conditions
Type
IR = 10 µA
V = 50 V
F = 120 MHz
IR = 6 mA
ns
R
V
pF
Ω
min.
35
max
0.3
max
2.5
typ.
150
(3)
(5)
DH50051
DH50058
DH50053
DH50103
DH50109
DH50203
DH50209
DH80051
(3)
35
1
0.5
1.5
3
0.6
3
200
200
500
1000
500
1000
2000
(4)
50
0.35
0.35
1.2
0.35
1.2
0.6
100
100
200
200
400
0.6
2
(1)
(2)
(3)
:
:
:
Other breakdown values on request
Other capacitance values on request
VR = 5 V at F = 1 MHz
(4) : VR = 20 V at F = 1 MHz
(5) : RSF at IF = 5 m A
Tem perature ranges:
Operating junction (T )
j
:
-55° C to +125° C
Storage :
-55° C to +150° C
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
Packages
DH50051
DH50058
DH50053
DH50103
DH50109
DH50203
DH50209
DH80051
DH50051-60
DH50051-51
DH50058-51
DH50053-51
DH50103-51
DH50109-51
DH50203-51
DH50209-51
DH80051-51
DH50051-53
DH50058-53
DH50053-53
DH50103-53
DH50109-53
DH50203-53
DH50209-53
DH80051-53
DH50051-54
DH50058-54
DH50053-54
DH50103-54
DH50109-54
DH50203-54
DH50209-54
DH80051-54
DH50051-70
DH50058-70
DH50053-70
DH50103-70
DH50109-70
DH50103-70
DH50209-70
DH80051-70
DH50058-60
DH50053-60
DH50103-60
DH50109-60
DH50203-60
DH50209-60
DH80051-60
(1) Other configuration available on request.
How to order?
DH50051
-
51
T3
Package
inform ation
Diode type
Conditioning
51: single SOT23
53: dual com m on
cathode SOT23
54: dual com m on
anode SOT23
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
60: single SOD323
70: dual SOT143
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SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
P LASTIC PACKAGE S URFACE MOUNT ATTENUATING
S ILICON P IN DIODES
Description
TEMEX uses its proprietary technology to m anufacture its Silicon PIN diodes in plastic package.
This product fam ily is designed for a low cost, m edium to high volum e m arket that m ay be supplied
in tape and reel for autom ated pick and place assem bly on surface m ount circuit boards.
The use of this technology elim inates wire bonding on to the chips.
Applications
Typical applications include variable RF attenuators and AGC (Autom atic Gain Control) circuits,
from MHz to several GHz.
The attenuating Pin diode uses properties of variation of forward series resistance versus the DC
forward bias current. In order to obtain the best dynam ic range, a single diode attenuator m ay be used
in series or shunt configuration or designed as a m ultiple diode circuit (T or p circuit), where the device
m ay be m atched through the attenuation range.
Note:To reduce the distortion, it is necessary to verify and design with the following form ula:
Î
HF
πτl I
F
DC
<< 1
Î
:
:
:
:
RF peak current (A)
HF
τl
Diode m inority carrier lifetim e (s)
DC bias current (A)
I
DC
F
Application frequency (Hz)
Typical perform ance curve
Typical series resistance versus forward current
RSF (Ω)
1000
100
10
1
DH40144
DH40225
DH40141
IF (mA)
10
0.1
1
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SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
Electrical characteristics at 25° C
I Zone
thickness
J unction
capacitance
Reverse
current
Carrier
lifetim e
Electrical
Param eters
Forward series
resistance Rsf (Ω)
(2)
(1)
C
j
IR
τI
IF = 10 m A
Test conditions
µm
F = 120 MHz
F = 1 MHz VR = 100 V
IR = 6 m A
µs
IF = 0.1 m A IF = 1 m A IF = 10 m A
pF
µA
Type
typ.
140
140
220
m in. m ax m in. m ax m in. m ax typ. m ax
m ax
10
10
typ.
2.5
5.0
DH40141
DH40144
DH40225
400
200
400
800
400
800
50
25
50
100
50
100
6.5
3.5
6.5
13
7
13
0.05
0.10
0.10
0.10
0.30
0.30
10
7.0
(1) Other I zone thicknesses on request
(2) Other capacitance values on request (m easured at 50 V)
Tem perature ranges:
Operating junction (T ) : - 55° C to + 125° C
j
Storage
:
- 65° C to + 150° C
Packages
SOD323
SOT23
SOT143
Packages
DH40141
DH40144
DH40225
DH40141-60
DH40144-60
DH40225-60
DH40141-51
DH40144-51
DH40225-51
DH40141-70
DH40144-70
DH40225-70
(1) Other configuration available on request.
How to order?
DH40141
-
51
T3
Diode type
Package
Conditioning
inform ation
51: single SOT23
53: dual com m on
cathode SOT23
54: dual com m on
anode SOT23
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
60: single SOD323
70: dual SOT143
87: SOT323
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SILICON PIN DIODES
Low cost square ceram ic package PIN diodes
LOW COST S QUARE CERAMIC PACKAGE P IN DIODES
Features
Description
•
•
•
•
•
•
Low loss, low distortion
TEMEX is m anufacturing a square PIN diode
for surface m ount applications. The chip inside
is passivated to ensure high reliability and very
low leakage current. These diodes ensure high
power switching at frequencies from HF to few
GHz. This package utilizes ceram ic package
technology with low inductance and leadless
faced package. The design sim plifies autom atic
pick and place indexing and assem bly.
The term ination contacts are tin plated for
vapor or reflow circuit board soldering. The
active area is a PIN glass passivated chip, which
can be designed to custom er specifications.
Low inductance
High reliability
Herm etically sealed package
Non rolling MELF design
Pick and place com patibility
Pinning
Outline draw ing
SOLDERABLE
SURFACES
CERAMIC
C
B
Millimeters
Inches
Package Symbol min. max min. max
CHIP
FULL FACE BOND
A
B
C
A
B
C
A
B
C
2
2.3
3.5
0.8
2.8
5.2
0.8
.079 .091
.114 .138
.012 .031
.098 .0110
.185 .205
.012 .031
SMD4
SMD6
SMD8
2.9
0.3
2.5
4.7
0.3
3.50 3.81 .138 .150
4.70 5.2
.185 .205
0.20 0.38 .008 .015
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SILICON PIN DIODES
Low cost square ceram ic package PIN diodes
Applications
TEMEX square ceram ic diodes are particularly suitable for high volum e tape and reel assem bly.
Several values of total capacitance are available, together with a low forward series resistance. These
com ponents are designed to m eet the low distortion specification required by all the m obile radio
applications. Due to the specific design, these devices offer low loss and low therm al resistance
perform ance and are characterized for high power handling. The electrical properties are ideal for use
in antenna switches, filters, phase shifters, in all m obile radio applications from few MHz to GHz
frequencies.
Electrical characteristics at 25° C
Applicable
voltage
V
Total
capacitance
Forward
series resistance
Minority
carrier
Electrical
Parameter
Power
dissipation
Package
C
T
R
lifetime
SF
τ
I
f = 1 MHz
f = 120 MHz
I = 10 mA
Contact
F
Test conditions
I < 10 µA
R
(1)
V = 50 V
R
I = 50 mA
F
I = 6 mA
R
surface
V
max
50
200
50
50
50
50
50
pF
Ω
µs
min.
1.0
1.0
2.0
3.5
5.0
1.0
1.0
W
max
3.0
3.0
4.0
4.5
8.0
3
Type
Type
typ.
0.6
1.0
0.9
1.5
1.8
0.6
1.0
max
typ.
0.70
0.25
0.50
0.40
0.50
0.7
max
0.90
0.35
0.75
0.60
0.75
1.00
0.35
(2)
SQM1050
SQM1150
SQM1250
SQM1350
SQM1450
SQM2050
SQM2150
SMD4
SMD4
SMD4
SMD4
SMD8
SMD4
SMD4
0.7
1.2
1.2
1.7
2.5
0.7
1.2
(2)
0.25
3
(1) diode brazed on infinite copper heat sink at 25° C
(2) standard package SMD4 also available in SMD6
Tem perature ranges:
Operating junction (T )
j
:
-55° C to +150° C
Storage
Soldering
:
:
-65° C to +150° C
230° C 5 Sec.
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SILICON PIN DIODES
Square ceram ic surface m ountable PIN diodes
S QUARE CERAMIC S URFACE MOUNTABLE P IN DIODES
Description
These PIN diodes are m anufactured in a square package (SMD) for surface m ount applications.
These packages utilize ceram ic package technology with low inductance and axial term inations.
This design sim plifies autom atic pick and place indexing and assem bly. The term ination contacts are
tin lead plated for vapor or reflow circuit board soldering on Printed Circuit Boards.
These diodes are particularly suited for applications in frequency hopping radios, low loss,
low distortion, and filters in HF, VHF and UHF frequencies.
Packages
Packages
SMD4
SMD4AM
SMD6
SMD8
SMD8AM
DH50209
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
DH80082
DH80100
DH80102
DH80106
-06
-06
-06
-06
-06
-06
-06
-06
-06
-40
-40
-40
-40
-40
-40
-40
-40
-40
-20
-20
-20
-20
-24
-24
-44
-44
Other specifications available on request.
How to order?
DH80053
-
06
T3
Diode type
Package
inform ation
-06: SMD4
-40: SMD4AM
SMD8AM
Conditioning
T1: 1000 pieces
tape & reel
T3: 3000 pieces
tape & reel
-20: SDM6
-24: SMD8
blank: bulk
12-12
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SILICON PIN DIODES
Square ceram ic surface m ountable PIN diodes
Electrical characteristics
Low voltage PIN diodes
Breakdow n
Total
capacitance
Forward
series resistance
Minority
carrier
V
br
(V)
Ct (pF)
R
(Ω)
t l (µs)
sf
Test
conditions
Vr = 50 V
f = 1 MHz
If = 50 m A
f = 120 MHz
m ax.
If = 10 m A
Ir = 6 m A
m in.
Ir = 10 µA
Type
m in.
typ.
m ax.
DH50209
200
1.00
1.20
0.25
2.00
Medium voltage PIN diodes
Applicable Breakdow n Total capacitance
Forward series
resistance Rsf
Minority
carrier
τl (µs)
Max. power
dissipation
25° C
voltage V
(V)
Vbr
(V)
Ct
(pF)
(Ω)
Test
conditions
Type
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
I < 10 µA
Ir = 10 µA
Vr = 50 V
f = 1MHz
I= 100mA I= 200 mA If= 10mA Contact Free
f= 120MHz f= 120 MHz Ir= 6mA surface air
W (1) W (2)
m ax.
500
500
500
500
500
500
typ.
550
550
550
550
550
550
typ.
m ax.
0.45
0.65
1.05
1.20
1.35
1.55
m ax.
m in.
1.1
0.40
0.55
0.85
1.05
1.25
1.45
0.70
0.60
0.40
0.35
0.30
0.28
0.65
0.55
0.35
0.30
0.27
0.25
3.0
3.5
4.0
4.0
4.5
4.5
1.2
1.2
1.2
1.5
1.5
1.5
1.5
2.0
2.5
3.0
3.5
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
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SILICON PIN DIODES
Square ceram ic surface m ountable PIN diodes
Medium voltage PIN diodes
Applicable Breakdow n Total capacitance
Forward series
resistance Rsf
(Ω)
Minority
carrier
τl (µs)
Max. power
dissipation
25° C
voltage V
(V)
Vbr
(V)
Ct
(pF)
Test
conditions
Type
DH80082
DH80100
DH80102
DH80106
Vr = 50 V
f = 1MHz
I=100mA I=200 mA If=10mA Contact Free
f=120MHz f=120 MHz Ir=6mA surface air
W (1) W (2)
I < 10 µA
Ir = 10 µA
m ax.
800
1000
1000
1000
typ.
850
1100
1100
1100
typ.
m ax.
1.00
0.65
1.00
2.00
m ax.
m in.
3.00
3.00
4.00
7.00
0.90
0.55
0.85
1.25
0.40
0.70
0.50
0.35
0.35
0.60
0.35
0.30
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
Tem perature ranges
Operating junction (T )
j
Storage
:
:
-55° C to +150° C
-65° C to +150° C
Series Resistance vs. Forward Current
RSF (Ω)
100
10
1
DH80052
DH80050
0
I (mA)
1000
0.1
10
100
RSF (Ω)
100
10
DH80053
DH80051
1
0
I (mA)
1000
0.1
10
100
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SILICON PIN DIODES
Non m agnetic square ceram ic package 500 volts PIN diodes
NON MAGNETIC S QUARE CERAMIC PACKAGE
5 0 0 VOLTS P IN DIODES
Features
Description
•
•
•
•
•
•
•
•
Non m agnetic package
TEMEX is m anufacturing a non m agnetic
square PIN diode for surface m ount appli-
cations. The properties of non m agnetism
prevent interference in the m agnetic field of the
im aging system .The chip inside is passivated to
ensure high reliability and very low leakage.
These diodes ensure high power switching at
frequencies from 1 MHz to several GHz. This
package utilizes ceram ic package technology
with low inductance and axial term inations.The
design sim plifies autom atic pick and place
indexing and assem bly. The term ination
contacts are tin plated for vapor or reflow circuit
board soldering. The active area is a PIN high
power glass passivated chip which can be
designed to custom er specifications.
Low loss, low distortion
Low inductance
High reliability
Herm etically sealed package
Glass passivated PIN diode chip
Non rolling MELF design
Pick and place com patibility
Pinning
Outline draw ing
SOLDERABLE
SURFACES
CERAMIC
0.635 max
(.025 max)
+0.3
-0.3
3.20
(.126+-..001122
)
CHIP
FULL FACE BOND
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SILICON PIN DIODES
Non m agnetic square ceram ic package 500 volts PIN diodes
Applications
Maxim um ratings
TEMEX non m agnetic SQP diodes are
particularly suitable for Magnetic Resonance
Im aging applications. The m axim um operating
breakdown voltage is 550 V. Several values of
total capacitance are available (beginning at
0.40 pF), together with a low forward series
resistance.
OPERATING
J UNCTION
SOLDERING
STORAGE
- 55° C
- 65° C
230° C 5 sec.
+ 150° C
+ 150° C
These devices are characterized for high power
handling, low loss and low distortion (long
carrier lifetim e design). The electrical properties
are ideal for use in RF coils which m ust produce
a hom ogeneous electrom agnetic field in the
MRI system for frequencies from a few MHz to
over 100 MHz.
Electrical characteristics
STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS
PACKAGED DIODES
Minority
Characteristics Applicable Breakdow n
Total
Forward series
resistance
Power
dissipation
carrier
lifeτtiIm e
at 25° C
voltage
voltage
capacitance
V
VBR
CT
RSF
Test
f = 1 MHz
VR = 50 V
f = 120 MHz
IF as below
IF = 10 m A
IR = 6 m A
Contact
IR < 10 µA I < 10 µA
r
conditions
surface (1)
TYPE
V
V
pF
Ω m ax
µs
W
max
typ.
typ.
max
IF=100mA IF=200mA
min.
max
DH80050-40
DH80051-40
DH80052-40
DH80053-40
DH80054-40
DH80055-40
500
500
500
500
500
500
550
550
550
550
550
550
0.40
0.55
0.85
1.05
1.25
1.45
0.45
0.65
1.05
1.20
1.35
1.55
0.70
0.60
0.40
0.35
0.30
0.25
0.65
0.55
0.35
0.30
0.27
0.22
1.1
1.5
2.0
2.5
3.0
3.5
3.0
3.5
4.0
4.0
4.5
4.5
(1) diode brazed on infinite copper heat sink
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SILICON PIN DIODES
High voltage PIN diodes
HIGH VOLTAGE P IN DIODES
Applications
Characteristics
These devices are m ost often used to control
Radio Frequency (RF) and m icrowave signals.
Typically, high-voltage PIN diodes are found in
high power switches and phase shifters.
The controlling elem ent of a PIN diode is its
Intrinsic (l) layer. The diode itself is a sandwich,
i.e. a high resistivity l layer between highly
doped layers of P and N m aterials. With
negative bias on the l layer, the PIN diode
exhibits very high parallel resistance, e.g. acting
as a switch in the OFF position. A positive bias
causes the diode to conduct, with very low
series resistance. Certain applications im pose
specific objectives on diode construction (e.g.
in the HF and VHF band, low signal distortion
can be achieved with high Minority Carrier
Lifetim e τl).
TEMEX high-voltage PIN diode products are
designed for very high reliability, high power
handling capabilities, high isolation, and low
signal distortion, especially in the HF and VHF
bands. High-power m ultithrow switch m odules
are available for frequencies in the 1 MHz to
1 GHz range.
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat m ount, stud m ount, surface
m ount (SMD) and (on request) non-m agnetic.
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SILICON PIN DIODES
High voltage PIN diodes
S ILICON P IN DIODES FOR S WITCHING & P HAS E
S HIFTING AP P LICATIONS (MEDIUM & HIGH P OWER)
Description
This series of high power, high voltage PIN diodes incorporates ceram ic-glass passivated m esa
technology. A broad range of products is available, in term s of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-m agnetic packages.
Electrical characteristics
CHIP DIODES
CHIP AND PACKAGED DIODES
Applicable Break-
voltage dow n
J unction
capacitance
Forward series
resistance
RSF
Minority
carrier
lifetim e
Characteristics
at 25°C
Chip
dim ensions
(1)
VR
VBR
C
j
τ
I
VR = 50 V
f = 1 MHz
pF
f=120 MHz
IF =10 m A
IR =6m A
Test conditions
N/ A
I<10µA I<10µA
IF AS SHOWN
TYPE
m m typ.
V
V
Ω MAX
µS
PIN
Gold dia per side
min.
typ.
typ.
max
IF = 100 mA IF = 200 mA
min.
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4
500
500
500
500
500
800
800
800
550
550
550
550
550
850
850
850
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.20
0.40
0.70
0.90
1.3
0.35
0.90
1.7
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
1000
1000
1000
1100
1100
1100
0.30
0.60
1.40
0.40
0.75
1.70
V = 100V
I = 200 mA I = 300 mA
F F
R
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1.5 H (2)
1.7 H (2)
2.2
1.5
2.2
1200
1200
1200
1200
1500
1500
1300
1300
1300
1300
1600
1600
0.30
0.40
1.20
1.70
2.30
1.20
2.30
0.60
0.45
0.40
0.30
0.45
0.30
0.55
0.35
0.30
0.25
0.35
0.25
6.0
1.00
1.40
2.00
1.00
2.00
10.0
12.0
15.0
10.0
15.0
V = 200V
I = 200 mA I = 300 mA
F F
R
EH80182
EH80189
EH80204
EH80209
EH80210
0.75
1.4
0.85
1.4
1.5
2.6 H (2)
1.7
2.6 H (2)
3 H (2)
1800
1800
2000
2000
2000
1900
1900
2100
2100
2100
0.60
0.80
2.40
1.30
2.40
3.40
0.60
0.35
0.50
0.35
0.20
0.50
0.30
0.40
0.30
0.15
12.0
18.0
14.0
18.0
25.0
2.00
1.00
2.00
3.00
1.5
(1) Other capacitance values available on request
(2) Hexagonal chips (between opposite flats)
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SILICON PIN DIODES
High voltage PIN diodes
PACKAGED DIODES
Therm al
Typical operating
conditions
resistance
RTH (4)
Type
Standard case (3)
VSWR < 1.5
PDISS = 1 W
Z = 50 Ω
0
Chip configuration
°C/ W
Frequency
Power
PIN
Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35
Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300
Flat mounted
max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
MHz
W
50
80
100
100
250
60
80
200
80
100
500
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
50
-
-
-
-
-
-
-
-
-
20000
30
20
20
10
50
20
10
20
20
10
15000
10000
3000
1000
20000
10000
500
10000
3000
500
15.0
12.0
5.5
-
-
DH80120
DH80124
DH80126
DH80129
DH80154
DH80159
F 27d
BH35
BH35
BH141
BH141
BH141
BH301
BH300
BH300
BH300
BH300
BH300
BH202
BH200
BH200
BH200
BH200
BH200
15.0
8.0
6.0
4.5
8.0
4.5
10
10
10
5
10
5
-
-
-
-
-
-
8000
2000
500
200
2000
200
100
250
500
1000
250
1000
DH80182
DH80189
DH80204
DH80209
DH80210
BH35
BH141
BH141
BH141
BH141
BH300
BH300
BH300
BH300
BH300
BH200
BH200
BH200
BH200
BH200
10
4.5
8.0
4.5
2.5
10
15
10
1.5
1.5
-
-
-
-
-
50
200
1000
200
50
1000
250
1000
1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Tem perature ranges: Operating junction (T ): -55° C to +175° C
Storage: -65° C to +200° C
j
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SILICON PIN DIODES
High voltage PIN diodes
TWO & THREE P ORT RF P IN S WITCH MODULES
Description
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 fam ily,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
Electrical characteristics
Loss
Isolation Input power
Characteristics
at 25°C
Frequency
range
Suggested bias
conditions
L
I
P
in
f (MHz)
I (m A)
f
f (MHz)
V (V)
r
Test conditions
Case
N/ A
CW
Forward Reverse
Sw itch
Type
Type
(1)
MHz
typ.
dB
dB
W
m A
typ.
V
(2)
m ax
m in.
m ax
typ.
200 MHz 100 MHz
100 m A
0.35
0.35
0 V
35
35
SH90101
SH91101
TO39
TO39
SP2T
SP2T
10 - 600
10 - 600
10
10
100
100
50
50
400 MHz 200 MHz
100 m A
0.35
0.35
0.35
0.35
0 V
25
25
25
25
SH90103
SH91103
SH92103
SH93103
BH203
BH203
BH204
BH204
SP2T
SP2T
SP3T
SP3T
20 - 1000
20 - 1000
20 - 1000
20 - 1000
100
100
100
100
200
200
200
200
150
150
150
150
100 MHz 200 MHz
200 m A
100 V
SH91107
BH403a
SP2T
20 - 500
0.20
33
1000
400
600
10 MHz 10 MHz
200 m A
0.15
0.15
200 V
37
37
SH90207
SH91207
BH405
BH405
SP2T
SP2T
1.5 - 50
1.5 - 50
1000
1000
1000
1000
700
700
(1) Series 90 and 92 : com m on anode
Series 91 and 93 : com m on cathode
(2) Custom configurations available on request
Tem perature ranges:
Operating junction (T ) : - 55° C to + 150° C
j
Storage
:
- 65° C to + 175° C
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SILICON PIN DIODES
High voltage PIN diodes
Internal w iring diagram s
Typical perform ances
INSERTION LOSS AND ISOLATION
VERSUS FREQUENCY
com m on
anode
com m on
cathode
Insertion
loss (dB)
Isolation
(dB)
46
0.9
0.8
0.7
44
42
Isolation
0.6
40
BOTTOM
VIEW
0.5
0.4
0.3
0.2
38
36
34
32
SH91101
SH90101
Insertion
loss
30
28
0.1
0
f
10 20 30 50 70 100 200 400 600 (MHz)
Insertion
loss (dB)
Isolation
(dB)
52
48
44
40
36
0.8
0.7
0.6
0.5
SH90103
SH92103
SH91103
SH93103
Isolation
0.4
32
28
0.3
0.2
0.1
0
24
20
Insertion
loss
f
20 30 50 70 100 200 400 700 1000 (MHz)
Insertion
loss (dB)
Isolation
(dB)
0.8
0.7
52
48
44
40
36
0.6
0.5
0.4
Isolation
0.3
0.2
0.1
0
32
28
Insertion
loss
SH91107
24
20
f
20 30 50 70 100 200 300 500
(MHz)
Insertion
loss (dB)
Isolation
(dB)
0.8
0.7
54
51
48
45
42
0.6
0.5
0.4
0.3
bias
bias bias
bias
Isolation
38
36
Insertion
loss
0.2
SH91207
SH90207
33
30
0.1
0
f
(MHz)
1
2
3
5
7
10
20 30 50
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SILICON PIN DIODES
Microwave applications
MICROWAVE AP P LICATIONS
Low and m edium voltage PIN diode applications
The m ost com m on uses of these devices are: fast switching, attenuation and lim iting. They operate at
frequencies from a few MHz to 100 GHz.
In switching applications, e.g. tim ing digital bit stream s, these PIN diodes support signal power levels
below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 µm , and passivated m esa technology in chip
configurations, yield very low junction capacitance (C ), i.e. below 0.025 pF.
j
As attenuators, e.g. in Autom atic Gain Control (AGC) circuits, these PIN diodes are m anufactured with
a proprietary technology. This technology optim izes the relationship between C and R
Series Resistance), offering a high Minority Carrier Lifetim e τl, which m inim izes signal distortion.
(Forward
j
SF
In lim iting applications, e.g. passive protection for receivers, these PIN diodes operate as power
dependent variable resistors.
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SILICON PIN DIODES
Microwave applications
ULTRAFAST S WITCHING S ILICON P IN DIODES
Description
For ultrafast switching, these passivated m esa diodes have a thin I layer (< 10 µm ).
Electrical characteristics
CHIP DIODES
CHIP AND PACKAGED DIODES
PACKAGED DIODES
Characteristics Gold Breakdown Junction
Series
Minority Reverse
Thermal
at 25°C
dia voltage capacitance resistance carrier switching
resistance
lifetime
time
TCR
Ø
V
C
RSF
τI
R
BR
j
th
Test
V = 6 V
IF = 10 mA IF = 10 MA IF = 20 mA
P
R
diss
IR = 10 µA
conditions
f = 1 MHz
f = 120 MHz IR = 6 mA V = 10 V
1 W
R
50 Ω
F 27 d
°C/W
Type
µm
V
pF
Ω
ns
ns
Type
Standard cases (1)
C =
b
0.18 pF
(2)
C =
b
0.12 pF
(2)
Case
typ. min. typ. max
max
typ.
typ.
max
C2a (1)
EH50033
EH50034
EH50035
EH50036
EH50037
EH50052
EH50053
EH50054
EH50055
EH50056
EH50057
EH50071
EH50072
EH50073
EH50074
EH50075
EH50076
EH50077
EH50101
EH50102
EH50103
EH50104
EH50105
EH50106
EH50107
25
30
35
55
65
30
35
40
50
65
80
35
40
45
50
60
80
100
45
50
60
70
90
30
30
30
30
30
50
50
50
50
50
50
70
70
70
70
70
70
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.40 0.60
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.40 0.60
0.04 0.06
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.40 0.60
0.04 0.06
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.40 0.60
1.8
1.5
1.0
0.9
0.7
1.6
1.4
1.1
1.0
0.9
0.7
2.0
1.7
1.6
1.4
1.0
0.9
0.7
1.9
1.7
1.4
1.2
1.0
0.8
0.6
20
20
25
30
40
30
30
35
40
50
60
50
50
60
60
100
100
150
150
150
200
250
300
400
500
2.0
2.0
2.5
3.0
4.0
3.0
3.0
4.0
4.0
5.0
6.0
5.0
5.0
6.0
6.0
10.0
10.0
15.0
15.0
15.0
20.0
25.0
30.0
40.0
50.0
DH50033
DH50034
DH50035
DH50036
DH50037
DH50052
DH50053
DH50054
DH50055
DH50056
DH50057
DH50071
DH50072
DH50073
DH50074
DH50075
DH50076
DH50077
DH50101
DH50102
DH50103
DH50104
DH50105
DH50106
DH50107
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
80
80
70
60
50
80
70
60
50
45
45
70
70
60
50
45
40
40
60
60
55
50
40
35
35
70
100
100
100
100
100
110 100
130 100
(1)
(2)
Custom cases available on request
C = C + C
Tem perature ranges:
Operating Junction (T ) : -55° C to +175° C
T
j
b
j
Storage
: -65° C to +200° C
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SILICON PIN DIODES
Microwave applications
FAST S WITCHING S ILICON P IN DIODES
Description
For fast switching, these passivated m esa diodes have a m edium I layer (< 50 µm ).
Electrical characteristics
CHIP DIODES
CHIP AND PACKAGED DIODES
PACKAGED DIODES
Characteristics Gold Breakdown Junction
Series
Minority Reverse
Thermal
at 25°C
dia voltage capacitance resistance carrier switching
resistance
lifetime
time
TCR
Ø
V
C
RSF
τI
R
BR
j
th
Test
V = 50 V
IF = 10 mA IF = 10 MA IF = 20 mA
P
R
diss
IR = 10 µA
conditions
f = 1 MHz
f = 120 MHz IR = 6 mA V = 10 V
1 W
F27 d
°C/W
R
50 Ω
Type
µm
V
pF
Ω
ns
ns
Type
Standard cases (2)
C =
b
0.18 pF
(2)
C =
b
0.12 pF
(2)
Case
typ. min. typ. max
max
typ.
typ.
max
C2a (1)
EH50151
EH50152
EH50153
EH50154
EH50155
EH50156
EH50157
EH50201
EH50202
EH50203
EH50204
EH50205
EH50206
EH50207
EH50251
EH50252
EH50253
EH50254
EH50255
EH50256
EH50401
EH50402
EH50403
EH50404
EH50405
55
60
70
150
150
150
150
150
150
150
200
200
200
200
200
200
200
250
250
250
250
250
250
400
400
400
400
400
0.04 0.06
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.40 0.60
0.04 0.06
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.40 0.60
0.04 0.06
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
0.23 0.40
0.04 0.06
0.06 0.08
0.08 0.12
0.12 0.17
0.17 0.23
2.0
1.7
1.5
1.4
1.0
0.8
0.6
2.3
2.1
1.5
1.3
1.0
0.8
0.7
2.4
2.2
2.0
1.4
0.9
0.8
2.5
2.3
2.1
1.8
1.6
200
230
300
500
550
800
950
300
400
500
650
800
950
1050
330
500
900
900
1000
1150
700
800
1000
1500
2000
20
23
30
50
55
80
95
30
40
50
65
80
95
100
33
50
90
90
DH50151
DH50152
DH50153
DH50154
DH50155
DH50156
DH50157
DH50201
DH50202
DH50203
DH50204
DH50205
DH50206
DH50207
DH50251
DH50252
DH50253
DH50254
DH50255
DH50256
DH50401
DH50402
DH50403
DH50404
DH50405
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
BH142
M208
M208
M208
BH142
BH142
50
50
45
40
35
30
30
45
45
40
35
30
30
25
40
40
35
30
30
25
35
35
30
25
20
90
110
130
150
60
65
75
100
120
150
170
65
75
100
130
160
180
80
100
110
70
90
80
120
150
200
100
150
200
(1) Chip presentation C2a, except:
Tem perature ranges:
Operating junction (T )
j
C2b for EH50256, EH50404 and EH50405
: -55° C to +175° C
: -65° C to +200° C
(2) Custom cases available on request
(3) C = C + C
Storage
T
j
b
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SILICON PIN DIODES
Microwave applications
ATTENUATOR S ILICON P IN DIODES
Description
The table below presents a single set of values from the variety of custom er options available for this
series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the custom er
to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness.
Typical applications include variable RF attenuators and AGC (Autom atic Gain Control) circuits, from
a few MHz to several GHz.
Electrical characteristics
PACKAGED
DIODES
CHIP DIODES
CHIP AND PACKAGED DIODES
I
Junction
capacitance
Reverse
current
C
Minority carrier
lifetime
Series resistance
Charact.
at 25°C
O
N
F
ZONE
THICKNESS
(1)
RSF
τ
C (2)
J
IR
I
I
F = 1 MHz
IF = 10 mA
IR = 6 mA
G
U
R
A
T
I
Test
conditions
V =100 V
F = 120 MHz
R
V = 50 V
R
µm
Standard
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
Type
µA
µs
Type
pF
package
(3)
Ω
Ω
Ω
O
N
typ.
min. max min. max min. max
typ.
max
max
min.
typ.
EH40073 C4c
EH40141 C4a
EH40144 C4c
EH40225 C4d
70
70
140
8
16
100
50
1.0
6.5 13.0
3.5 7.0
6.5 13.0
2.0
0.30
0.05
0.10
0.10
0.50
0.10
0.30
0.30
10
10
10
10
1.5
1.5
4.0
5.5
2.0 DH40073 F 27d
2.5 DH40141 F 27d
5.0 DH40144 F 27d
7.0 DH40225 F 27d
140 400 800
140 200 400
220 400 800
50
25
50
100
(1) Other I zone thicknesses available on request
(2) Other capacitance values available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +175°C
j
(3) Custom cases available on request
Storage
: -65° C to +200° C
Typical series resistance vs forward current
RSF (Ω)
1000
EH40141 - EH40225
EH40144
100
EH40073
10
1
IF (mA)
0.1
1
10
100
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SILICON PIN DIODES
Microwave applications
S ILICON LIMITER P IN DIODES
Description
These passivated m esa PIN diodes have a thin I layer.This series of diodes is available as chips and in
herm etic ceram ic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise am plifiers, m ixers, and detectors).
Electrical characteristics
CHIP DIODES
PACKAGED DIODES
Minority
carrier
Breakdow n
voltage
J unction
capacitance capacitance
J unction
Series
resistance
RSF
GOLD DIA
Characteristics at 25°C
lifetim e
Ø
VBR
C
C -6 (1)
j
j0
τI
IF=10 m A
IR =10 µA
VR =0 V
VR =6 V
IF =10 m A
Test conditions
I = 6 m A
f = 1 MHz
pF
f = 1 MHz
pF
f=120 MHz
R
Type
Case
µm
V
Ω
ns
typ.
m in.
m ax
typ.
m in.
m ax
m ax
typ.
EH60033
EH60034
EH60035
EH60036
EH60037
EH60052
EH60053
EH60054
EH60055
EH60056
EH60057
EH60072
EH60074
EH60076
EH60102
EH60104
EH60106
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
25
30
35
55
65
30
35
40
50
65
80
40
50
80
50
70
110
25
25
25
25
25
50
50
50
50
50
50
70
70
70
90
90
90
50
50
50
50
50
70
70
70
70
70
70
90
90
90
120
120
120
0.14
0.20
0.28
0.45
0.70
0.10
0.14
0.20
0.28
0.45
0.70
0.10
0.20
0.45
0.10
0.20
0.45
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.06
0.12
0.23
0.06
0.12
0.23
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.08
0.17
0.40
0.08
0.17
0.40
1.8
1.5
1.0
0.9
0.7
1.8
1.4
1.1
1.0
0.9
0.8
1.7
1.4
0.9
1.7
1.2
0.8
20
20
25
30
40
30
30
35
40
50
60
50
60
100
150
250
400
(1) Other values of capacitance available on request
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SILICON PIN DIODES
Microwave applications
PACKAGED DIODES
NOMINAL MICROWAVE CHARACTERISTICS
Leakage Insertion
Peak
Thermal
resistance
RTH
Threshold
PL
CW power
PIN
power
power
loss
Characteristics at 25°C
PIN
POUT
L
f = 2.7 GHz
1dB
Limiting
f = 2.7 GHz
PIN = -10
dBm
1 µs
Pulse
1% DC
dBm
P
= 1W
diss
Test conditions
f = 2.7 GHz
case F 27d
Standard case (2)
°C/ W
dBm
dBm
dB
W
Type
C = 0.18 pF
C = 0.12 pF
b
b
max
typ.
typ.
typ.
max
max
(3)
(3)
DH60033
DH60034
DH60035
DH60036
DH60037
DH60052
DH60053
DH60054
DH60055
DH60056
DH60057
DH60072
DH60074
DH60076
DH60102
DH60104
DH60106
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
80
80
70
60
50
80
70
60
50
45
45
70
50
40
60
50
35
+ 10
+ 10
+ 10
+ 10
+ 10
+ 15
+ 15
+ 15
+ 15
+ 15
+ 15
+ 18
+ 18
+ 18
+ 20
+ 20
+ 20
+ 20
+ 20
+ 21
+ 22
+ 23
+ 24
+ 24
+ 25
+ 26
+ 27
+ 28
+ 27
+ 30
+ 32
+ 31
+ 33
+ 35
0.1
0.1
0.1
0.2
0.2
0.1
0.1
0.1
0.1
0.2
0.2
0.1
0.2
0.2
0.2
0.2
0.3
+ 50
+ 50
+ 52
+ 53
+ 56
+ 52
+ 52
+ 53
+ 54
+ 57
+ 58
+ 54
+ 55
+ 58
+ 56
+ 59
+ 61
2.0
2.0
2.5
3.0
4.0
2.5
2.5
3.0
3.5
4.0
5.0
3.0
4.0
5.0
3.5
5.0
7.0
(2) Other capacitance values available on request
(3) = C +C
Tem perature ranges:
Operating junction (T ) : -55° C to +125°C
C
T
j
b
j
Storage
: -65° C to +200° C
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SILICON SCHOTTKY DIODES
Selection guide
SILICON SCHOTTKY DIODES
Selection Guide
PAGE
SCHOTTKY BARRIER DETECTOR DIODES
SCHOTTKY BARRIER MIXER DIODES
12-29
12-30
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SILICON SCHOTTKY DIODES
Silicon Schottky barrier detector diodes
S ILICON S CHOTTKY BARRIER DETECTOR DIODES
Description
Silicon Schottky barrier detector diodes are available as:
•
•
packaged diodes
chip
They are optim ized for wide band applications, in the frequency range from 1 to 18 GHz.
Electrical characteristics packaged diodes
Forward
continuous
currenT
IF
Tangential
sensitivity
Video
resistance
RV
RF
power
PRF
Frequency
range
Breakdown
voltage
VBR
Characteristics at 25°C
Test conditions
F
T
oper
ss
Video bandw idth = 1 MHz
IF = 30 µA
IR = 10 µA
V
N/ A
GHz
CW
N/ A
m A
dBm
m in.
kΩ
m W
TYPE
CASE (1)
m in.
m ax
m ax
m ax
typ.
DH340
F51
2 - 12
12 - 18
- 54
- 51
1
2
250
50
3
(1) Custom cases available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
Storage
: -65° C to +175° C
Typical tangential sensitivity vs frequency
•
•
T = + 25° C
TSS
I = 30 µA
F
(dBm)
•
Video bandwidth = 1 MHz
-56
-54
-52
-51
1
2
5
10
20
f (GHz)
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SILICON SCHOTTKY DIODES
Silicon Schottky barrier m ixer diodes
S ILICON S CHOTTKY BARRIER MIXER DIODES
Description
Silicon Schottky barrier m ixer diodes are available in the following configurations:
•
•
packaged
chip
Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between
-10 dBm and +10 dBm . Medium barrier diodes are required for applications where the LO drive level
is between -5 dBm and +15 dBm . The use of a passivated planar construction contributes to high
reliability.
Electrical characteristics packaged diodes
SSB
IF
Frequency
range
Breakdow n
voltage
VBR
Total
capacitance
CTO
VSWR
(ratio)
Noise
figure
NFSSB
Characteristics
at 25°C
Test pulse
energy
Im pedance
F
ZIF
oper
f = 30 MHZ
PLO = 1 m W
F=1 MHZ
VR =0 V
IR = 10 µA
Test conditions
N/ A
(1)
N/ A
ratio
Pulse =3 nS
Type
Case (2) GHz
dB
Ω
Ergs
m ax
V
pF
m ax
typ.
m ax
m in.
m ax
typ.
typ.
DH301
DH302
DH303
DH312
DH313
DH314
DH315
DH322
DH323
DH324
DH325
F51
F51
F51
F51
F51
F51
F51
F51
F51
F51
F51
1 - 6
1 - 6
1 - 6
6.5
6.0
5.5
7.0
6.5
6.0
5.5
7.5
7.0
6.5
6.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
400
400
400
400
400
5
5
5
5
5
5
5
5
5
5
5
3
3
3
3
3
3
3
3
3
3
3
0.40
0.40
0.40
0.25
0.25
0.25
0.25
0.17
0.17
0.17
0.17
6 - 12
6 - 12
6 - 12
6 - 12
12 - 18
12 - 18
12 - 18
12 - 18
RF Power m ax: 250 m W CW
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
(1) Noise figure m easurem ent conditions:
Storage
: -65° C to +175° C
P
f
= 1 m W
LO
= 30 MHz
IF
NF = 1.5 dB
IF
noise tube: 15.6 dB
dc load = 10 Ω
test frequencies: 3.0, 9.3 or 15.0 GHz
(2)
Custom cases available on request
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TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
PAGE
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
12-32
HIGH Q SILICON ABRUPT J UNCTION TUNING VARACTOR
- VBR = 30 V
- VBR = 45 V
12-34
12-35
SILICON HYPERABRUPT J UNCTION TUNING VARACTOR
12-36
MICROWAVE SILICON HYPERABRUPT J UNCTION TUNING VARACTOR
12-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
sam e function as the fam iliar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
S OT2 3 S URFACE MOUNT S ILICON ABRUP T
TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial m esa design with a high tem perature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This fam ily
is designed for a low cost m edium to high volum e m arket that m ay be supplied in tape and reel
for autom ated pick and place assem bly on surface m ount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and m oderate frequency bandwidth applications
(VCO m ainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:
C (0 V)
j
C (V )
j
r
=
γ
1 + V
r
[
]
φ
V
:
:
:
Reverse voltage
r
φ
Built-in potential .7V for Si
.5 for abrupt tuning varactor
γ
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25° C
Reverse breakdown voltage, Vb = @10 µA: 30 V m in.
Breakdow n
voltage
VBR
J unction
capacitance
Tuning
ratio
Figure
of m erit
Q
Electrical
param eters
C
j
F = 1 MHz
VR = 4 V
VR = 4 V
Test Conditions
Type
IR = 10 µA
C
/ C
j0V j30V
F = 50 MHz
V
pF
(1)
typ.
typ.
m in.
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
30
30
30
30
30
30
30
1.0 ± 20%
1.6 ± 20%
2.0 ± 20%
3.0 ± 20%
4.5 ± 20%
6.7 ± 10%
10 ± 10%
4.0
4.5
4.6
4.7
4.8
4.9
5.0
4300
4100
3900
3400
2200
2600
2200
(1)
Other tolerance on request
Tem perature ranges:
Operating junction (T ): -55° C to +125° C
j
Storage :
-65° C to +150° C
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
Packages
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
DH71010-60
DH71016-60
DH71020-60
DH71030-60
DH71045-60
DH71067-60
DH71100-60
DH71010-51
DH71016-51
DH71020-51
DH71030-51
DH71045-51
DH71067-51
DH71100-51
DH71010-53
DH71016-53
DH71020-53
DH71030-53
DH71045-53
DH71067-53
DH71100-53
DH71010-54
DH71016-54
DH71020-54
DH71030-54
DH71045-54
DH71067-54
DH71100-54
DH71010-70
DH71016-70
DH71020-70
DH71030-70
DH71045-70
DH71067-70
DH71100-70
(1) Other configuration available on request.
How to order?
DH71010
-
51
T3
Diode type
Package
Conditioning
inform ation
51: single SOT23
53: dual com m on
cathode SOT23
54: dual com m on
anode SOT23
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
60: single SOD323
70: dual SOT143
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TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q S ILICON ABRUP T J UNCTION TUNING VARACTOR
VBR 3 0 V
Description
This series of high Q epi-junction m icrowave tuning varactors (30 V) incorporates a passivated m esa
technology. It is well suited for frequency tuning applications up to Ku band.
CHIP DIODES
CHIP AND PACKAGED DIODES
PACKAGED DIODES (1)
V
BR (10 µA) ≥ 30 V
junction Fig. of
capacitance merit
Standard cases
Other cases
Gold
dia
Ø
Tuning
ratio
Tuning
ratio
Characteristics at 25°C
Test Conditions
C
Q
C /C
C /C
30
TO T
30
T
j
TO
CASE
CASE
V = 4 V
V = 4 V
R
R
CAPACITANCE
CAPACITANCE
C
C
f = 1 MHZ f = 50 MHZ
b
b
Type
Case
µm
pF
Type
Case
Case
typ.
± 20 % (2)
min.
C = 0.18 pF (3) min. C = 0.12 pF (3) min.
b
b
EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
EH71045
EH71054
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
50
60
70
80
90
100
110
120
140
150
170
180
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
4500
4500
4400
4300
4200
4100
3900
3600
3400
3200
3000
2800
DH71004
DH71006
DH71008
DH71010
DH71012
DH71016
DH71020
DH71025
DH71030
DH71037
DH71045
DH71054
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
3.0
3.4
3.7
4.0
4.3
4.5
4.6
4.6
4.7
4.7
4.8
4.8
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
3.3
3.7
4.0
4.3
4.5
4.6
4.7
4.8
4.8
4.8
4.9
4.9
3.7
4.5
5.4
± 10 % (2)
C = 0.18 pF (3)
b
C = 0.2 pF (3)
b
EH71067
EH71080
EH71100
EH71120
EH71150
EH71180
EH71200
EH71220
EH71270
EH71330
EH71390
EH71470
EH71560
EH71680
EH71820
EH71999
C2a
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
C2c
C2d
C2d
200
220
250
270
300
330
350
370
410
450
500
540
590
650
720
800
6.7
8.0
2600
2400
2200
2000
1800
1700
1500
1400
1300
1200
950
DH71067
DH71080
DH71100
DH71120
DH71150
DH71180
DH71200
DH71220
DH71270
DH71330
DH71390
DH71470
DH71560
DH71680
DH71820
DH71999
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
750
650
500
400
300
(1) Custom cases available on request
(2) Closer capacitance tolerances available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
(3) C = C + C
Storage
: -65° C to +175° C
T
j
b
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TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
VBR 4 5 V
Description
This series of high Q epi-junction m icrowave tuning varactors (45 V) incorporates a passivated m esa
technology. It is well suited for frequency tuning applications up to X band.
Chip diodes
Chip and packaged diodes
BR (10 µA) ≥ 45 V
Packaged diodes (1)
V
STANDARD CASES
OTHER CASES
GOLD
DIA
Ø
Junction
Capacitance
Fig. of
Merit
Q
Tuning
Ratio
Tuning
Ratio
C /C
45
TO T
Characteristics at 25° C
Test conditions
C
j
C /C
45
TO
T
Case
Capacitance
Case
Capacitance
V = 4 V
V = 4 V
R
R
f = 1 MHZ f = 50 MHZ
C
C
b
b
Type
Case
µm
pF
Type
Case
Case
typ.
± 20 % (2)
min.
C =0.18pF (3) min. C =0.12pF (3) min.
b
b
EH72004
EH72006
EH72008
EH72010
EH72012
EH72016
EH72020
EH72025
EH72030
EH72037
EH72045
EH72054
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
60
80
90
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3000
2900
2800
2700
2700
2600
2500
2400
2300
2200
2000
1900
DH72004
DH72006
DH72008
DH72010
DH72012
DH72016
DH72020
DH72025
DH72030
DH72037
DH72045
DH72054
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
3.5
3.9
4.2
4.5
4.7
5.0
5.2
5.4
5.5
5.6
5.7
5.8
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
3.7
4.1
4.5
4.7
4.9
5.2
5.5
5.6
5.7
5.7
5.8
5.9
110
110
120
140
150
170
190
210
230
3.7
4.5
5.4
± 10 % (2)
C =0.18pF (3)
b
C = 0.2pF (3)
b
EH72067
EH72080
EH72100
EH72120
EH72150
EH72180
EH72200
EH72220
EH72270
EH72330
EH72390
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
250
280
310
340
380
420
440
470
520
570
620
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
DH72067
DH72080
DH72100
DH72120
DH72150
DH72180
DH72200
DH72220
DH72270
DH72330
DH72390
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
5.9
5.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
33.0
39.0
800
± 10 % (2)
C =0.18pF (3)
b
EH72470
EH72560
EH72680
C2d
C2d
C2d
680
740
820
47.0
56.0
68.0
700
600
450
DH72470
DH72560
DH72680
BH28
BH28
BH28
6.0
6.0
6.0
± 10 % (2)
C =0.4pF (3)
b
EH72820
EH72999
C2g
C2g
900
1000
82.0
100.0
350
250
DH72820
DH72999
BH141
BH141
6.0
6.0
(1) Custom cases available on request
(2) Closer capacitance tolerances available on request
(3) = C + C
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
C
Storage
: -65° C to +175° C
T
j
b
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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
P LASTIC PACKAGE, S URFACE MOUNT HYP ERABRUP T
TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated m esa technology.This fam ily is designed for a low cost m edium to high volum e m arket that
m ay be supplied in tape and reel for autom ated pick and place assem bly on surface m ount circuit boards.
Application
The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of
capacitance range. They provide the highest Q factor (low reverse series resistance). Typical
applications include low noise narrow and m oderate frequency bandwidth applications (VCO m ainly)
from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase
shifters, delay lines...
2 0 Vo lt hyp e ra b ru p t ju n c t io n va ra c t o rs
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 20 V m in. @ 10 µA
Reverse Current, Ir = 200 nA @ 16 V
Tem perature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
Total capacitance (pF)
Ct
Tuning
ratio
Test
conditions
Type
f = 1 MHz
Vr = 1 V
typ
f = 1 MHz
Vr = 4 V
±20 %
f=1 MHz
Vr = 12 V
typ.
f = 1 MHz Ct1V/ Ct12V Ct1V/ Ct20V
Vr = 20 V
typ.
f = 1 MHz
typ.
f = 1 MHz
typ.
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
2.5
3.6
5.2
1.2
1.7
2.4
3.5
4.9
7.0
10.0
15.0
0.6
0.8
1.1
1.6
2.2
3.1
4.5
6.6
0.5
0.7
0.9
1.3
1.7
2.4
3.5
5.1
4.1
4.4
4.7
4.9
5.0
5.1
5.2
5.2
4.9
5.4
5.8
6.1
6.4
6.5
6.7
6.8
8.0
11.0
16.0
23.0
35.0
12 Vo lt hyp e ra b ru p t ju n c t io n va ra c t o rs
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 12 V m in. @ 10 µA
Reverse Current, Ir = 200 nA @ 8 V
Tem perature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
Total capacitance (pF)
Ct
Tuning
ratio
Test
conditions
Type
f = 1 MHz
Vr = 1 V
typ
f = 1 MHz
Vr = 2.5 V
±20 %
f=1 MHz
Vr = 4 V
typ.
Ct1V/ Ct2.5V Ct1V/ Ct4V
f = 1 MHz
typ.
f = 1 MHz
typ.
DH77033
DH77047
DH77068
DH77100
DH77150
6.0
8.5
12.0
18.0
27.0
3.5
4.9
7.0
10.0
15.0
1.9
2.7
3.8
5.5
8.1
1.7
1.7
1.7
1.7
1.8
3.1
3.2
3.2
3.2
3.3
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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Typical junction capacitance versus reverse voltage
Profils in Cj
100.00
10.00
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
10
100
0.1
0.10
VR (V)
100
10
DH77033
DH77047
DH77068
DH77100
DH77150
1
1
0.1
10
V (V)
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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
Packages
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
DH77033
DH77047
DH77068
DH77100
DH77150
DH76010-60
DH76015-60
DH76022-60
DH76033-60
DH76047-60
DH76068-60
DH76100-60
DH76150-60
DH77033-60
DH77047-60
DH77068-60
DH77100-60
DH77150-60
DH76010-51
DH76015-51
DH76022-51
DH76033-51
DH76047-51
DH76068-51
DH76100-51
DH76150-51
DH77033-51
DH77047-51
DH77068-51
DH77100-51
DH77150-51
DH76010-53
DH76015-53
DH76022-53
DH76033-53
DH76047-53
DH76068-53
DH76100-53
DH76150-53
DH77033-53
DH77047-53
DH77068-53
DH77100-53
DH77150-53
DH76010-54
DH76015-54
DH76022-54
DH76033-54
DH76047-54
DH76068-54
DH76100-54
DH76150-54
DH77033-54
DH77047-54
DH77068-54
DH77100-54
DH77150-54
DH76010-70
DH76015-70
DH76022-70
DH76033-70
DH76047-70
DH76068-70
DH76100-70
DH76150-70
DH77033-70
DH77047-70
DH77068-70
DH77100-70
DH77150-70
(1) Other configuration available on request.
How to order?
DH76150
-
51
T3
Diode type
Package
Conditioning
inform ation
51: single SOT23
53: dual com m on
cathode SOT23
54: dual com m on
anode SOT23
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
60: single SOD323
70: dual SOT143
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TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q S ILICON HYP ERABRUP T J UNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated m esa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta = +25° C
Reverse breakdown voltage, Vb = @ 10 µA: 20 V m in.
Reverse current,
Ir @ 16 V:
200 nA
Figure of
merit (Q)
Total capacitance (pF)
Ct
Tuning
ratio
Test
f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Ct1V/Ct12V Ct1V/CT20V
conditions
Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V f = 1 MHz
f = 1 MHz
typ.
4.9
(1)
Type
Case
typ.
2200
2000
1700
1400
1000
700
typ.
2.5
3.6
5.2
7.7
11
±20%
1.2
1.7
2.4
3.5
typ.
0.6
0.8
1.1
typ.
0.5
0.7
0.9
1.3
typ.
4.1
4.4
4.7
4.9
5.0
5.1
5.2
5.2
Chip
DH76010 F27d
DH76015 F27d
DH76022 F27d
DH76033 F27d
DH76047 F27d
DH76068 F27d
DH76100 F27d
DH76150 F27d
EH76010
EH76015
EH76022
EH76033
EH76047
EH76068
EH76100
EH76150
5.4
5.8
6.1
6.4
6.5
6.7
6.8
1.6
4.9
6.9
2.2
3.0
4.5
6.6
1.7
16
2.4
3.5
5.1
400
140
23
34
10.2
15.2
(1)
Custom cases available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
Storage
: -65° C to +150° C
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
0.1
10
100
0.10
VR (V)
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POWER GENERATION DIODES
Selection guide
POWER GENERATION DIODES
Selection Guide
PAGE
STEP RECOVERY DIODES
- STANDARD
12-42
12-43
- SURFACE MOUNT PLASTIC PACKAGES
SILICON MULTIPLIER VARACTORS
12-45
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POWER GENERATION DIODES
Step recovery diodes and m ultiplier varactor applications
STEP RECOVERY DIODES AND MULTIP LIER
VARACTOR AP P LICATIONS
A Step Recovery Diode (SRD) generates pulses that can be used to m ultiply frequencies, and to set up
reference points, e.g. for synchronizing test instrum ents.
This device operates by alternately producing and consum ing a charge, based on the frequency of its
input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias,
the SRD m aintains conduction by consum ing its charge. When the charge has been fully consum ed, the
SRD snaps off, i.e. very quickly reverts to zero conduction.
This device acts as a switch, controlling current flow by alternately storing and releasing its charge, forming
pulses at a repetition rate equal to the frequency of its input.
The output of a step recovery diode is m ost often used in two ways:
•
•
a pulse train can be applied to resonant circuits, which provides output power at a frequency
above that of the original input,
a pulse train can be used to develop a series of frequencies at m ultiples of the original input
frequencies.
Typical applications of step recovery diodes include oscillators, power transm itters and drivers,
for telecom m unications, telem etry, radar and test equipm ent.
In choosing a SRD, the significant characteristics include:
Output Frequency (f ) ; Breakdown Voltage (V ) ; Junction Capacitance (C ) ; Minority Carrier Lifetime (τl);
o
BR
j
Snap-offTim e (t ) ;Therm al Resistance (R ) and Output Power (P ).
so
th
o
Multiplier varactors
A m ultiplier varactor is a physical stack of series-connected SRD units.This configuration is capable of
m ultiplying power.
Power out
Power in
Packages for m ultiplier varactors are designed to dissipate the power yield
(
(
Most of these packages hold from 2 to 4 chips, this type of com ponents are available on custom er
request.
12-41
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POWER GENERATION DIODES
Step recovery diodes (SRD)
STEP RECOVERY DIODES (S .R.D.)
Description
These diodes use m esa technology and oxide passivation. They support fast switching and m ultiplier
applications:
•
•
•
•
very short pulse generation,
ultra fast waveform shaping,
com b generation,
high order m ultiplication, at m oderate power ratings.
Chip diodes
Chip and packaged diodes
Packaged diodes
Gold Breakdown Junction Min. car. Snap-Off
Thermal
resistance
Characteristics
at 25°C
dia
voltage capacitance lifetime
time
∆
V
C
t
t
R
br
j
I
so
th
Vr=6V If=10mA If=10 mA
f= 1MHz Ir = 6mA Vr=10V
Pdiss =1W
in F27d
Test conditions N/A
Ir=10µA
V
Type
Case
µm
pF
ns
ps
Type Case (1) °C/W
Other cases (1)
C =0.1pF
b
C =0.18pF C =0.12pF
b
b
typ.
min.
max
min. typ. max
max
(2)
(2)
(2)
EH541
EH542
EH543
EH544
EH545
EH546
C2a 160
C2a 220
C2a 110
C2a 140
30
50
30
50
25
15
1.5
1.5
1.0
1.0
0.4
0.3
25
40
20
35
10
6
90 140 DH541 A22e
150 250 DH542 A22e
90 140 DH543 A22e
150 250 DH544 A22e
75 100 DH545 A22e
60 80 DH546 A22e
30
25
40
35
70
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
C2a
C2a
55
40
100
(1) Custom cases available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
(2)
C
= C + C
T
j
b
Storage
: -65° C to +175° C
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POWER GENERATION DIODES
Plastic package Surface Mount step recovery diodes
P LASTIC PACKAGE S URFACE MOUNT S .R.D.
Description
Our SRD diodes are also available in plastic package.They incorporate a passivated m esa technology.
This fam ily is designed for a low cost m edium to high volum e m arket that m ay be supplied in tape
and reel for autom ated pick and place assem bly on surface m ount circuit boards.
Application
The DH54X series support fast switching and m ultiplier applications:
• very short pulse generation
• ultra fast waveform shaping
• com b generation
• high order m ultiplication at m oderate power ratings.
Tem perature ranges
Operating junction (Tj) : -55°C to +125°C
Storage : -55° C to +150° C
Minority Snapp-Off
J unction
Breakdow n
capacitance
carrier
tim e t
so
V
(V)
br
Cj (pF)
Vr = 6 V
f = 1 MHz
m ax.
1.5
lifetim e t l (ns)
(ps)
If = 10 m A
Vr = 10 V
Test
conditions
Type
DH541
DH542
DH543
DH544
DH545
DH546
If = 10 m A
Ir = 6 m A
Ir = 10 µA
m in.
30
m in.
25
40
20
35
10
typ.
m ax.
140
250
140
250
100
80
90
150
90
150
75
50
30
50
25
1.5
1.0
1.0
0.4
15
0.3
6
60
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
Packages
DH541
DH542
DH543
DH544
DH545
DH546
DH541-60
DH542-60
DH543-60
DH544-60
DH545-60
DH546-60
DH541-51
DH542-51
DH543-51
DH544-51
DH545-51
DH546-51
DH541-53
DH542-53
DH543-53
DH544-53
DH545-53
DH546-53
DH541-54
DH542-54
DH543-54
DH544-54
DH545-54
DH546-54
DH541-70
DH542-70
DH543-70
DH544-70
DH545-70
DH546-70
(1) Other configuration available on request.
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POWER GENERATION DIODES
Plastic package Surface Mount step recovery diodes
How to order?
DH541
-
51
T3
Diode type
Package
Conditioning
inform ation
51: single SOT23
53: dual com m on
cathode SOT23
54: dual com m on
anode SOT23
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
60: single SOD323
70: dual SOT143
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POWER GENERATION DIODES
Silicon m ultiplier varactor
S ILICON MULTIP LIER VARACTORS
Description
These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power
levels (stack configuration) and/or at high m ultiplication orders.
Pa ck a g e d d io d e s
Output Breakdown
freq. voltage
Junction
capacitance
Min. car. Snap-Off Thermal
Power
output
Characteristics
at 25°C
lifetime
time
resistance
Varactor
chips
per
F
V
C
τI
t
R
P
o
br
j
so
th
o
IF = 10 mA IF = 10 mA
V = 6 V
Test
Conditions
R
IR = 10 µA
f = (n)f
N/A
N/A
o
i
IR = 6 mA V = 10 V
f = 1 MHz
pF
R
package
V
ns
ps
°C/W
max
W
Type
Case
GHz
min. max min. max
min.
max
typ.
(n)
DH294
DH200 BH142b
DH270 S268-W1
DH110
DH293
DH252
DH256
DH292
DH267
M208b
1
1
1
1
1
1
1
1
1
0.2 - 2
0.5 - 2
2 - 3
2 - 4
3 - 6
45
90
80
60
50
40
30
20
15
70
140
110
90
70
60
45
35
25
4.0
5.5
4.0
3.0
2.0
0.9
0.5
0.2
0.2
7.0
7.0
5.5
4.0
3.0
2.0
1.1
0.5
0.3
125
250
160
100
60
35
20
10
6
400
1000
700
400
250
200
120
75
300
8
0.5
20.0
15.0
9.0
6.0
3.0
2.0
0.6
0.2
2
2
2
2
2
2
2
2
2
10
25
30
50
60
70
100
F27d
F60d
F27d
F27d
F27d
F27d
2 - 8
5 - 12
8 - 16
10 - 25
60
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
Storage
: -65° C to +175° C
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MICROWAVE SILICON COMPONENTS
Case styles
CASE STYLES
SURFACE MOUNT DEVICES
GENERAL PURPOSE
STRIP LINE / MICRO STRIP
PAGE
PAGE
PAGE
SMD3
......................12-56
......................12-56
......................12-56
......................12-56
......................12-56
......................12-56
......................12-57
......................12-57
BH15
.....................12-48
.....................12-48
.....................12-49
.....................12-50
.....................12-50
.....................12-50
.....................12-50
.....................12-50
.....................12-50
.....................12-53
A22e
BH28
BH32
BH35
.....................12-48
.....................12-48
.....................12-48
.....................12-48
SMD4
BH16
SMD6
BH101
BH143
BH151
BH152
BH153
BH154
BH155
BMH76
SMD8
SOD323
SOT23
SOT143
SOT323
BH142a .....................12-49
BH142b .....................12-49
BH142c .....................12-49
BH142d .....................12-49
BH142e .....................12-49
POWER
BH142f
BH167
BH167s
BH198
F27d
.....................12-49
.....................12-51
.....................12-51
.....................12-51
.....................12-54
.....................12-54
.....................12-54
.....................12-54
.....................12-55
.....................12-55
.....................12-55
.....................12-55
.....................12-55
.....................12-55
.....................12-55
.....................12-55
.....................12-56
PAGE
BH141
BH158
......................12-49
......................12-51
BH158am ......................12-51
F30
BH200a
BH202
BH203a
BH203b
BH203c
BH204
BH300
BH301
BH303
BH403a
BH405
......................12-52
......................12-52
......................12-52
......................12-52
......................12-52
......................12-52
......................12-53
......................12-53
......................12-53
......................12-53
......................12-53
F51
CHIP vERSION
F54
PAGE
F54s
F60
C2
C4
.....................12-54
.....................12-54
F60d
M208a
M208b
M208c
M208d
M208e
M208f
S268/W1 .....................12-56
TO39
W2
.....................12-57
.....................12-57
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MICROWAVE SILICON COMPONENTS
Case styles
C =0.1pF
C =0.1pF
b
E
D
C
B
A
1.7
2.1 .067 DIA .083 DIA
E
D
C
B
A
0.09
0.28
3.82
0.15
1.17
0.11
0.48
4.58
0.35
.0035
.011
.15
.0043
.019
.18
b
A22e
BH15
0.35
0.41 .014 DIA .016 DIA
25.4
1
1
E
B
25.4
4
.006
.014
D
E
4.4
.157
min.
.173
max
1.37
max
.046
min.
.054
max
C
A
SYM min.
max
SYM min.
B
C
A
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
D
C =0.16pF
b
C =0.2pF
b
E
D
C
B
A
0.08
0.45
4.58
0.66
2.4
0.12
0.55
5.58
0.86
.003
.018
.180
.026
.005
.022
.220
.034
C
B
A
2.04
1.93
3.00
2.50
.080
.098
BH28
BH16
2.13 .076 DIA .084 DIA
3.20 .118 DIA .126 DIA
A
E
B
SYM min.
max
min.
max
2.6
.094
min.
.102
max
C
BOL MILLIMETERS
INCHES
SYM min.
max
C
D
BOL MILLIMETERS
INCHES
A
B
C =0.2pF
b
C =0.25pF
b
H
G
F
5.14
1.37
1.78
1.37
5.93
1.77
1.98
1.77
.202
.054
.070
.054
.233
.070
.078
.070
BH32
BH35
C
B
A
3.5
3.86
5.64
3.9
.138
.154
A
C
D
E
4.26 .152 DIA .168 DIA
6.04 .222 DIA .238 DIA
D
C
B
A
1.52
1.62 .060 DIA .064 DIA
4.16 .156 DIA .164 DIA
3.25 .120 DIA .128 DIA
1.62 .060 DIA .064 DIA
3.96
3.05
1.52
SYM min.
max
min.
max
G
BOL MILLIMETERS
INCHES
C
B
F
E
H
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
B
A
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MICROWAVE SILICON COMPONENTS
Case styles
F
E
D
C
B
A
0.70
5.10
13.4
.028
.201
.526
C =0.15pF
b
C =0.4pF
E
D
C
B
A
0.05
0.55
5
0.15
0.65
.002
.022
.197
.011
.006
.026
b
BH101
BH141
4.70
12.8
.185
.504
A
E
F
B
6. 40 UNF-3A
0.28
2.3
0.48
.019
5.20
6.50
5.40 .205 DIA .203 DIA
6.70 .256 DIA .263 DIA
E
2.7
.091
min.
.106
max
A
D
SYM min.
max
D
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
C
A
BOL MILLIMETERS
INCHES
C
B
C =0.2pF
b
C =0.2pF
b
G
F
0.1
0.06
0.55
2.5
0.5
.004
.0024
.022
.098
.083
.049
.020
.0039
.026
BH142a
0.10
0.65
BH142b
E
D
C
B
A
B
D
C
B
D
A
B
A
1.24
1.90
1.58
.049
.062
2.10
1.24
2.70
1.58
.106
.062
A
2.20 .075 DIA .087 DIA
SYM min.
max
min.
max
1.90
2.20 .075 DIA .087 DIA
F
E
G
BOL MILLIMETERS
INCHES
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
C =0.2pF
b
C =0.2pF
b
BH142c
BH142d
E
D
C
B
A
0.06
0.55
5
0.10
0.65
.0024
.022
.197
.049
.0039
.026
E
D
C
B
A
0.06
0.55
5
0.10
0.65
.0024
.022
.197
.049
.0039
.026
E
A
B
A
1.24
1.58
.062
1.24
1.58
.062
1.90
2.20 .075 DIA .087 DIA
1.90
2.20 .075 DIA .087 DIA
SYM min.
max
min.
max
SYM min.
max
min.
max
C
C
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
E
D
D
E
C =0.2pF
b
C =0.2pF
b
BH142f
E
D
C
B
A
0.06
0.55
5
0.10
0.65
.0024
.022
.197
.049
.0019
.026
E
D
C
B
A
0.06
0.55
10
0.10
0.65
.0024
.022
.394
.049
.0039
.026
BH142e
B
A
C
B
A
1.24
1.58
.062
1.24
1.58
.062
1.90
2.20 .075 DIA .087 DIA
max min. max
1.90
2.20 .075 DIA .087 DIA
max min. max
C
SYM min.
SYM min.
E
C
D
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
E
D
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MICROWAVE SILICON COMPONENTS
Case styles
C =0.1pF
C =0.25pF
b
E
D
C
B
A
0.08
0.45
7.60
0.45
0.12
0.55
.003
.094
.299
.018
.005
.102
b
BH143
BH151
E
D
C
B
A
0.08
0.35
3.70
0.20
1.17
0.12
0.45
4.30
0.30
.003
.014
.147
.008
.005
.018
.169
.012
C
0.55
.022
E
D
E
B
2.40
2.60
max
BOL MILLIMETERS
.094
min.
.102
max
B
A
SYM min.
1.37
max
.046
min.
.054
max
INCHES
SYM min.
D
BOL MILLIMETERS
INCHES
C
A
C =0.05pF
b
C =0.13pF
b
E
D
C
B
A
0.08
0.35
3.70
0.20
1.17
0.12
0.45
4.30
0.30
.003
.014
.147
.008
.005
.018
.169
.012
BH152
BH153
E
D
C
B
A
0.08
0.45
6.15
0.91
1.68
0.12
0.55
6.55
1.01
.003
.018
.242
.036
.005
.022
.258
.040
E
B
B
E
C
C
1.37
max
.046
min.
.054
max
1.88
max
.066
min.
.074
max
SYM min.
SYM min.
A
D
BOL MILLIMETERS
INCHES
D
BOL MILLIMETERS
INCHES
C
A
C =0.13pF
b
C =0.13pF
b
E
D
C
B
A
0.08
0.45
6.15
0.91
1.68
0.12
0.55
6.55
1.01
.003
.018
.242
.036
.005
.022
.258
.040
BH154
BH155
E
D
C
B
A
0.08
0.45
6.15
0.91
1.68
0.12
0.55
6.55
1.01
.003
.018
.242
.036
.005
.022
.258
.040
B
E
C
C
1.88
max
.066
min.
.074
max
B
E
C
C
1.88
max
.066
min.
.074
max
A
SYM min.
D
SYM min.
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
D
A
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MICROWAVE SILICON COMPONENTS
Case styles
C =0.4pF
b
C =0.4pF
b
D
C
B
A
4.1
5.2
4.7
5.7
4.4
5.5 .204 DIA .216 DIA
5.2 .185 .205
6.1 .224 DIA .240 DIA
max min. max
BOL MILLIMETERS INCHES
.16
.173
D
C
B
A
4.00
5.10
4.90
6.50
4.50
5.50 .200 DIA .216 DIA
5.30 .193 .209
6.70 .256 DIA .264 DIA
.157
.177
BH158
BH158am
A
A
SYM min.
SYM min.
max
min.
max
B
D
B
D
BOL MILLIMETERS
INCHES
C
C
C =0.12pF
G
F
1.86
0.71
2.06
0.81
.073
.028
.081
.032
b
C =0.12pF
b
F
E
D
C
B
A
0.71
0.61
1.55
1.22
1.86
1.42
0.81
0.66 .024 DIA .026 DIA
1.75 .061 .069
1.32 .048 DIA .052 DIA
2.06 .073 .081
1.62 .056 DIA .064 DIA
max min. max
BOL MILLIMETER INCHES
.028
.032
BH167s
BH167
E
D
C
B
A
0.61
1.55
1.22
2.57
1.42
0.66 .024 DIA .026 DIA
1.75 .060 .070
1.32 .048 DIA 052 DIA
2.87 .101 .113
1.62 .056 DIA .064 DIA
max min. max
BOL MILLIMETERS INCHES
A
E
A
B
D
SYM min.
F
B
SYM min.
G
D
E
C
F
E
C
C =0.6pF
b
BH198
4 (.157)
0.1 (.004)
L
4
.157
2 (.079)
Cathod
D1 1.55
1.75
1.88
.06
.069
.074
.006
.024
.044
.049
D
C
1.68
0.07
.066
.003
.016
.036
.034
0.15
0.6
Anode in
B2 0.4
B1 0.92
A1 0.86
1.12
1.25
Cathod
1.02 (.040)
1.25 (.049)max
A
0.66
0.86
max
.026
min.
.034
max
SYM min.
Dimensions in mm (inches)
BOL MILLIMETER
INCHES
Tg : ± 0.1 (.004)
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MICROWAVE SILICON COMPONENTS
Case styles
C =0.4pF
M
L
K
J
43°
47°
43°
47°
L
K
J
43°
47°
43°
47°
C =0.15pF
b
b
4.12
4.52
.162
.178
5.49
5.89
.216
.232
BH200a
BH202
12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122DIA .128DIA
1.25
16.30 16.70
30.48 31.50 1.200DIA 1.240DIA
I
6.30
6.40
.248
.719
.970
.252
.735
.980
A
I
1.29
.049
.642
.248
.009
.098
.719
.970
.267
.051
.658
.252
.011
.105
.735
.980
.283
H
G
F
18.26 18.67
24.64 24.89
C
D
A
E
H
G
F
F
6.30
0.23
2.50
6.40
0.27
2..67
3.10
3.25 .122 DIA .128 DIA
B
D
J
B
L
E
D
C
B
A
0.10 0.127
.004
.267
.152
.098
.005
.283
.168
.105
C
E
E
D
C
B
A
6.78
3.86
7.19
4.27
G
I
H
18.26 18.67
24.64 24.89
K
I
J
2.50 2.667
6.78
9.4
7.19
12.50 12.90 .492 DIA .508 DIA
G
K
H
9.64 .370 DIA .380 DIA
SYM min.
max
min.
max
M
L
M
L
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
F
BOL MILLIMETERS
INCHES
M
L
K
J
43°
47°
43°
47°
M
L
K
J
43°
47°
43°
47°
C =0.15pF
b
C =0.15pF
b
4.12
4.52
.162
.178
4.12
4.52
.162
.178
BH203a
BH203b
12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122DIA .128DIA
1.25
16.30 16.70
12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122DIA .128DIA
1.25
16.30 16.70
D
A
I
1.29
.049
.642
.248
.009
.098
.719
.970
.267
.051
.658
.252
.011
.105
.735
.980
.283
D
A
I
1.29
.049
.642
.248
.009
.098
.719
.970
.267
.051
.658
.252
.011
.105
.735
.980
.283
H
G
F
H
G
F
F
F
6.30
0.23
2.50
6.40
0.27
2.67
6.30
0.23
2.50
6.40
0.27
2.67
B
B
L
L
C
C
E
E
E
D
C
B
A
E
D
C
B
A
K
K
I
18.26 18.67
24.64 24.89
18.26 18.67
24.64 24.89
J
J
H
G
G
6.78
9.4
7.19
6.78
9.4
7.19
9.64 .370 DIA .380 DIA
9.64 .370 DIA .380 DIA
H
M
M
M
M
I
SYM min.
max
min.
max
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
C =0.15pF
b
C =0.15pF
b
M
L
K
J
43°
47°
43°
47°
M
L
K
J
43°
47°
43°
47°
4.12
4.52
.162
.178
4.12
4.52
.162
.178
BH203c
BH204
12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122DIA .128DIA
1.25
16.30 16.70
12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122DIA .128DIA
1.25
16.30 16.70
D
A
I
1.29
.049
.642
.248
.009
.098
.719
.970
.267
.051
.658
.252
.011
.105
.735
.980
.283
I
1.29
.049
.642
.248
.009
.098
.719
.970
.267
.051
.658
.252
.011
.105
.735
.980
.283
D
A
H
G
F
H
G
F
F
F
B
6.30
0.23
2.50
6.40
0.27
2.67
6.30
0.23
2.50
6.40
0.27
2.67
L
B
L
C
E
C
E
E
D
C
B
A
E
D
C
B
A
I
K
K
I
J
18.26 18.67
24.64 24.89
18.26 18.67
24.64 24.89
J
G
G
6.78
9.4
7.19
6.78
9.4
7.19
9.64 .370 DIA .380 DIA
max min. max
BOL MILLIMETERS INCHES
9.64 .370 DIA .380 DIA
max min. max
BOL MILLIMETERS INCHES
H
M
M
M
H
M
SYM min.
SYM min.
12-52
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
MICROWAVE SILICON COMPONENTS
Case styles
C =0.2pF
b
C =0.4pF
b
BH301
BH300
J
1.52
2.82
4.42
1.62
3.02
4.82
.060
.111
.174
.064
.119
.190
I
3.25
5.60
3.45
6.00
.128
.220
.136
.236
I
H
G
F
A
A
H
G
F
6 - 32 UNC - 3A
4 - 40 UNC - 3A
2.97
0.20
20
3.38
0.30
-
.177
.008
.787
.248
.549
.133
.012
-
E
I
2.16
0.18
2.56
0.20
.85
.101
.008
.637
.189
.415
B
J
I
E
D
C
B
A
E
B
E
D
C
B
A
.007
.617
.185
.372
H
H
15.67 16.18
G
6.30
6.40
.252
.593
C
4.70
9.46
4.80
G
13.95 15.05
6.5
10.54
F
F
6.7 .256 DIA .264 DIA
D
3.00
3.20 .118 DIA .126 DIA
D
C
SYM min.
max
min.
max
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
C =0.3pF
b
I
3.25
5.60
3.45
6.00
.128
.220
.136
.236
N
M
L
K
J
-
3
-
.120
.397
C =0.4pF
b
BH303
H
G
F
Typical: 45°
9.68 10.08 .381
6 - 32 UNC - 3A
BH403a
A
2.97
0.20
20
3.38
0.30
-
.177
.008
.787
.248
.549
.133
.012
-
10.46 10.87 .412 DIA .428 DIA
E
F
E
D
C
B
A
2.72
1.57
0.10
1.78
4.39
1.90
25.4
3.12
1.98
0.15
2.03
4.64
2.16
-
.107
.062
.004
.070
.173
.075
1
.123
.078
.006
.080
.183
.085
-
I
E
A
B
I
H
H
6.30
6.40
.252
.593
H
G
F
F
B
K
L
C
G
J
13.95 15.05
6.5
D
6.7 .256 DIA .264 DIA
I
SYM min.
max
min.
max
E
D
C
B
A
M
D
C
G
BOL MILLIMETERS
INCHES
N
10 - 32 UNF 3A
12.50 12.90 .492 DIA .508
18.67 19.43
max
BOL MILLIMETERS
.735
min.
.765
max
SYM min.
INCHES
C =0.4pF
b
J
0.97
2.49
2.9
1.07
2.59
3.1
.038
.098
.114
.882
.0079
.240
.362
.042
.102
.122
.890
.0118
.256
.378
K
J
0.50
0.20
1.95
1.47
5.1
0.70
0.24
2.15
1.67
5.3
.020
.008
.077
.058
.201
.125
.028
.010
.085
.066
.209
.145
C =0.15pF
b
I
BH405
BMH76
H
G
F
I
22.4
0.20
6.1
22.6
0.30
6.5
H
G
F
H
I
B
F
J
B
E
D
C
B
A
3.18
3.68
G
H
J
E
9.2
9.6
E
D
C
B
A
2.36
2.52 .093 DIA .099 DIA
C
A
K
5/16 - 24 UNF - 2A
14.2 .551
3.1
4
3.3
4.2
.122
.157
.119
.406
min.
.130
.165
.127
.413
max
D
D
A
14
.559
I
E
G
19.6
19.8 .772 DIA .780 DIA
max min. max
BOL MILLIMETERS INCHES
3.02
10.3
3.22
10.5
max
G
D
SYM min.
I
SYM min.
F
C
F
BOL MILLIMETERS
INCHES
12-53
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
MICROWAVE SILICON COMPONENTS
Case styles
C4
C2J 1740
C2H 1440
C2G 1140
C2E 940
C2D 840
C2C 740
C2B 540
C2A 340
1800
1500
1200
1000
900
68.50
56.69
44.88
37.01
33.07
29.13
21.26
13.39
70.87
59.06
47.24
39.37
35.43
31.50
23.62
15.75
C2
C4G 1500
C4F 1000
C4E 700
C4D 500
C4C 400
C4B 300
C4A 200
2500
1500
1000
700
59.06
39.37
27.56
19.69
15.75
11.81
7.87
98.43
59.06
39.37
27.56
19.69
15.75
11.81
Ø
500
800
400
600
300
A
400
A
CON min.
max
min.
max
CON min.
max
min.
max
A
A
FIG
A (µm)
A (µ”)
FIG
A (µm)
A (µ”)
C =0.18pF
b
F27d
H
G
F
2.01
2.95
1.55
1.55
2.05 .079 DIA .081 DIA
3.15 .116 DIA .124 DIA
1.59 .061 DIA .063 DIA
1.59 .061 DIA .063 DIA
G
F
C =0.25pF
b
F30
D
C
B
A
0.4
1.4
0.6
1.6
.016
.055
.024
.063
A
E
C
1.93
2.94
2.13 .076 DIA .084 DIA
3.14 .116 DIA .124 DIA
D
C
B
A
5.15
5.65
1.59
1.82
.202
.061
.069
.222
.063
.072
D
H
1.55
1.74
1.55
D
B
A
C
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
1.59
max
.061
min.
.063
max
B
SYM min.
E
BOL MILLIMETERS
INCHES
C =0.1pF
b
C =0.2pF
b
F51
F54
F
E
D
C
B
A
1.0
1.2
.039
.016
.047
.019
D
C
B
A
1.47
1.47
1.93
1.67
.058
.066
C
0.40
0.47
A
1.67 .058 DIA .066 DIA
2.13 .076 DIA .084 DIA
D
0.61
1.19
1.70
2.00
0.66 .024 DIA .029 DIA
1.35 .047 DIA .053 DIA
D
4.9
5.3
.193
min.
.209
max
2.00
2.16 .079 DIA .085 DIA
max min. max
BOL MILLIMETER INCHES
.067
.079
B
SYM min.
max
A
E
F
BOL MILLIMETERS
INCHES
SYM min.
D
C
B
12-54
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
MICROWAVE SILICON COMPONENTS
Case styles
C =0.2pF
b
C =0.2pF
b
F
E
D
C
B
A
1.51
1.81
3.76
1.63
1.95
4.21
.059
.071
.148
.064
.077
.166
F60
D
C
B
A
0.36
0.84
0.46
0.94
.014
.073
.018
.047
F54s
A
A
1.19
2.00
1.35 .047 DIA .053 DIA
2.16 .079 DIA .085 DIA
1.52
1.62 .060 DIA .064 DIA
2.13 .076 DIA .084 DIA
3.15 .116 DIA .124 DIA
D
E
F
1.93
2.95
SYM min.
max
min.
max
C
D
BOL MILLIMETERS
INCHES
SYM min.
max
min.
max
B
BOL MILLIMETER
INCHES
C
B
G
F
0.1
0.06
0.55
2.5
0.4
0.1
.004
.0024
.022
.100
.052
.037
.015
.004
.026
C =0.12pF
b
C =0.25pF
b
F60d
M208a
F
E
D
C
B
A
1.52
0.95
2.91
1.64
1.09
3.36
.060
.037
.115
.065
.043
.132
A
E
D
C
B
A
0.65
D
D
A
B
1.52
1.62 .060 DIA .064 DIA
2.13 .076 DIA .084 DIA
3.15 .116 DIA .124 DIA
1.3
1.7
.068
.053
E
F
C
1.93
2.95
0.95
1.35
D
1,07
1,47 .042 DIA .058 DIA
G
F
E
SYM min.
max
min.
max
SYM min.
max
min.
max
BOL MILLIMETER
INCHES
BOL MILLIMETER
INCHES
C
B
C =0.12pF
b
E
D
C
B
A
0.06
0.55
5
0.1
.0024
.022
.200
.037
.004
.026
M208c
0.65
M208b
D
B
C =0.12pF
b
A
B
A
0.95
1.35
.053
B
A
0.95
1.07
1.35
.037
.053
1.07
1.47 .042 DIA .058 DIA
1.47 .042 DIA .058 DIA
SYM min.
max
min.
max
SYM min.
max
min.
max
C
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
E
C =0.12pF
b
C =0.12pF
b
M208e
M208d
E
D
C
B
A
0.06
0.55
5
0.1
.0024
.022
.200
.037
.004
.026
E
D
C
B
A
0.06
0.55
5
0.1
.0024
.022
.200
.037
.004
.026
D
B
0.65
0.65
A
E
B
D
C
0.95
1.35
.053
0.95
1.35
.053
A
1.07
1.47 .042 DIA .058 DIA
max min. max
BOL MILLIMETERS INCHES
1.07
1.47 .042 DIA .058 DIA
max min. max
BOL MILLIMETERS INCHES
C
SYM min.
SYM min.
E
C
12-55
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
MICROWAVE SILICON COMPONENTS
Case styles
C =0.12pF
b
C =0.2pF
b
I
0.38
0.64
0.51
0.62
0.88
0.60
.015
.025
.020
.024
.035
.024
S268/W1
M208f
H
G
F
F
E
D
C
B
A
0.06
0.55
5
0.1
.0024
.022
.200
.392
.037
.004
.026
F
B
E
2.44
2.64 .096 DIA .104 DIA
0.65
B
E
D
C
B
A
0.21
1.71
0.31
2.00
.008
.067
.012
.079
D
A
E
9.8
10.2
1.35
.408
.053
C
3 - 48 UNC 2A
5.46 .197
I
0.95
C
F
A
5.01
.215
1.07
1.47 .042 DIA .058 DIA
max min. max
BOL MILLIMETER INCHES
D
2.85
3.25 .112 DIA .128 DIA
max min. max
BOL MILLIMETER INCHES
SYM min.
G
H
SYM min.
C =0.24pF
b
C =0.11pF
b
E
D
C
B
A
Typical 0,2
Typical 1
Typical .008
Typical .039
E
D
C
B
A
2.69
3.71
4.4
2.89
3.91
4.6
.106
.114
SMD3
.146
.173
.154
.181
SMD4
A
B
0.3
2.9
2
0.8
3.5
.012
.031
.138
.114
2.19
2.44
2.39 .086 DIA .094 DIA
2.64 .096 DIA .104 DIA
A
2.3
.079
min.
.091
max
SYM min.
max
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
C
BOL MILLIMETERS
INCHES
E
D
C
B
E
D
A
C =0.24pF
b
E
D
C
B
A
Typical 0,20
Typical 1.20
Typical .008
Typical .047
SMD6
SMD8
0.3
4.70
2.5
0.8
5.2
.012
.031
.205
A
B
C
4.70
0.20
5.2
.185
.205
.185
0.38
max
.008
min.
.015
max
2.8
.098
min.
.110
max
SYM min.
SYM min.
max
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
B
C
B
C =0.2pF
b
SOT23
SOD323
K
J
0.1
0.13
0.56
0.1
0.004 0.005
0.021 0.022
0.002 0.0004
0.042 0.045
0.017 0.018
0.070 0.080
0.037 typ.
H
G
1.70
0.20
.0669
.0078
.0059
.0020
.0118
.043
D
0.53
0.05
1.07
0.43
1.78
B
C
F
I
F
0.15
H
G
F
1.14
0.46
2.04
C
B
E
0.05
D
0.30
A
H
C
G
C
1.10
E
0.94 typ.
A
B
1.25
.049
D
C
0.43
2.36
1.3
0.45
2.49
1.35
3.02
max
0.017 0.020
0.093 0.098
0.051 0.053
0.112 0.119
H
F
A
2.50
.098
G
I
D
K
SYM
Typical
Typical
B
J
E
A
SYM
2.84
min.
BOL MILLIMETERS
INCHES
min.
max
BOL Millimeters Millimeters Inches Inches
12-56
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
MICROWAVE SILICON COMPONENTS
Case styles
SOT143
SOT323
J
I
max 8°
K
J
0.12
0.43
0.1 max.
0.9
.0047
.017
0.10
0.12
.0039
.0047
.0075
.0157
.0315
.051
D
H
I
.004 max.
.035
F
A
J
G
1.90
H
G
F
G
F
0.40
0.3
.012
4
3
H
E
0.80
1.3
.051
G
E
B
D
D
1.30
E
0.65
0.3
.026
I
C
1.10
.043
D
C
.012
A
2
1
B
2.60
.102
2.1
.0.83
E
F
C
A
2.90
.114
B
1.25
1.9
.043
SYM
Typical
Typical
A
SYM
.075
J
Typical
Typical
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
C =0.2pF
b
TO39
I
8.3
8.5 .327 DIA .335 DIA
0.48 .016 DIA .019 DIA
H
G
F
0.41
44°
0.71
46°
44°
46°
.032
.409
0.81
.028
.370
.500
.196
.248
E
D
C
B
A
9.40 10.40
12.7
G
4.98
6.30
5.18
6.40
.204
.252
F
E
I
9.10
9.30 .358 DIA .366 DIA
max min. max
BOL MILLIMETER INCHES
C
A
H
SYM min.
D
B
C =0.15pF
b
W2
H
G
F
0.71
0.45
0.81
0.55
.028
.020
.032
.022
3 - 48 UNC - 3A
0.81 .024
E
H
F
E
0.61
.032
D
C
B
A
1.17
3.40
2.46
4.38
1.37 .046 DIA .054 DIA
3.60 .134 .142
2.66 .097 DIA .105 DIA
B
D
G
4.68
max
.172
min.
.184
max
C
A
SYM min.
BOL MILLIMETERS
INCHES
12-57
Vol. 1
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