DH71010-54T3 [TEMEX]
Variable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-3;
| 型号： | DH71010-54T3 |
| 厂家： | 
TEMEX |
| 描述： | Variable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-3 二极管 变容二极管 |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
S OT2 3 S URFACE MOUNT S ILICON ABRUP T
TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial m esa design with a high tem perature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This fam ily
is designed for a low cost m edium to high volum e m arket that m ay be supplied in tape and reel
for autom ated pick and place assem bly on surface m ount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and m oderate frequency bandwidth applications
(VCO m ainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:
C (0 V)
j
C (V )
j
r
=
γ
1 + V
r
[
]
φ
V
:
:
:
Reverse voltage
r
φ
Built-in potential .7V for Si
.5 for abrupt tuning varactor
γ
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25° C
Reverse breakdown voltage, Vb = @10 µA: 30 V m in.
Breakdow n
voltage
VBR
J unction
capacitance
Tuning
ratio
Figure
of m erit
Q
Electrical
param eters
C
j
F = 1 MHz
VR = 4 V
VR = 4 V
Test Conditions
Type
IR = 10 µA
C
/ C
j0V j30V
F = 50 MHz
V
pF
(1)
typ.
typ.
m in.
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
30
30
30
30
30
30
30
1.0 ± 20%
1.6 ± 20%
2.0 ± 20%
3.0 ± 20%
4.5 ± 20%
6.7 ± 10%
10 ± 10%
4.0
4.5
4.6
4.7
4.8
4.9
5.0
4300
4100
3900
3400
2200
2600
2200
(1)
Other tolerance on request
Tem perature ranges:
Operating junction (T ): -55° C to +125° C
j
Storage :
-65° C to +150° C
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
Packages
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
DH71010-60
DH71016-60
DH71020-60
DH71030-60
DH71045-60
DH71067-60
DH71100-60
DH71010-51
DH71016-51
DH71020-51
DH71030-51
DH71045-51
DH71067-51
DH71100-51
DH71010-53
DH71016-53
DH71020-53
DH71030-53
DH71045-53
DH71067-53
DH71100-53
DH71010-54
DH71016-54
DH71020-54
DH71030-54
DH71045-54
DH71067-54
DH71100-54
DH71010-70
DH71016-70
DH71020-70
DH71030-70
DH71045-70
DH71067-70
DH71100-70
(1) Other configuration available on request.
How to order?
DH71010
-
51
T3
Diode type
Package
Conditioning
inform ation
51: single SOT23
53: dual com m on
cathode SOT23
54: dual com m on
anode SOT23
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
60: single SOD323
70: dual SOT143
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相关型号：
DH71010-70T10
Variable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-4
TEMEX
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