DH80182-BH200 [TEMEX]
Pin Diode, Silicon, CERAMIC, 2 PIN;
| 型号： | DH80182-BH200 |
| 厂家： | 
TEMEX |
| 描述： | Pin Diode, Silicon, CERAMIC, 2 PIN |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON PIN DIODES
High voltage PIN diodes
S ILICON P IN DIODES FOR S WITCHING & P HAS E
S HIFTING AP P LICATIONS (MEDIUM & HIGH P OWER)
Description
This series of high power, high voltage PIN diodes incorporates ceram ic-glass passivated m esa
technology. A broad range of products is available, in term s of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-m agnetic packages.
Electrical characteristics
CHIP DIODES
CHIP AND PACKAGED DIODES
Applicable Break-
voltage dow n
J unction
capacitance
Forward series
resistance
RSF
Minority
carrier
lifetim e
Characteristics
at 25°C
Chip
dim ensions
(1)
VR
VBR
C
j
τ
I
VR = 50 V
f = 1 MHz
pF
f=120 MHz
IF =10 m A
IR =6m A
Test conditions
N/ A
I<10µA I<10µA
IF AS SHOWN
TYPE
m m typ.
V
V
Ω MAX
µS
PIN
Gold dia per side
min.
typ.
typ.
max
IF = 100 mA IF = 200 mA
min.
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4
500
500
500
500
500
800
800
800
550
550
550
550
550
850
850
850
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.20
0.40
0.70
0.90
1.3
0.35
0.90
1.7
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
1000
1000
1000
1100
1100
1100
0.30
0.60
1.40
0.40
0.75
1.70
V = 100V
I = 200 mA I = 300 mA
F F
R
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1.5 H (2)
1.7 H (2)
2.2
1.5
2.2
1200
1200
1200
1200
1500
1500
1300
1300
1300
1300
1600
1600
0.30
0.40
1.20
1.70
2.30
1.20
2.30
0.60
0.45
0.40
0.30
0.45
0.30
0.55
0.35
0.30
0.25
0.35
0.25
6.0
1.00
1.40
2.00
1.00
2.00
10.0
12.0
15.0
10.0
15.0
V = 200V
I = 200 mA I = 300 mA
F F
R
EH80182
EH80189
EH80204
EH80209
EH80210
0.75
1.4
0.85
1.4
1.5
2.6 H (2)
1.7
2.6 H (2)
3 H (2)
1800
1800
2000
2000
2000
1900
1900
2100
2100
2100
0.60
0.80
2.40
1.30
2.40
3.40
0.60
0.35
0.50
0.35
0.20
0.50
0.30
0.40
0.30
0.15
12.0
18.0
14.0
18.0
25.0
2.00
1.00
2.00
3.00
1.5
(1) Other capacitance values available on request
(2) Hexagonal chips (between opposite flats)
12-18
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SILICON PIN DIODES
High voltage PIN diodes
PACKAGED DIODES
Therm al
Typical operating
conditions
resistance
RTH (4)
Type
Standard case (3)
VSWR < 1.5
PDISS = 1 W
Z = 50 Ω
0
Chip configuration
°C/ W
Frequency
Power
PIN
Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35
Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300
Flat mounted
max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
MHz
W
50
80
100
100
250
60
80
200
80
100
500
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
BH202N
50
-
-
-
-
-
-
-
-
-
20000
30
20
20
10
50
20
10
20
20
10
15000
10000
3000
1000
20000
10000
500
10000
3000
500
15.0
12.0
5.5
-
-
DH80120
DH80124
DH80126
DH80129
DH80154
DH80159
F 27d
BH35
BH35
BH141
BH141
BH141
BH301
BH300
BH300
BH300
BH300
BH300
BH202N
BH200
BH200
BH200
BH200
BH200
15.0
8.0
6.0
4.5
8.0
4.5
10
10
10
5
10
5
-
-
-
-
-
-
8000
2000
500
200
2000
200
100
250
500
1000
250
1000
DH80182
DH80189
DH80204
DH80209
DH80210
BH35
BH141
BH141
BH141
BH141
BH300
BH300
BH300
BH300
BH300
BH200
BH200
BH200
BH200
BH200
10
4.5
8.0
4.5
2.5
10
15
10
1.5
1.5
-
-
-
-
-
50
200
1000
200
50
1000
250
1000
1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Tem perature ranges: Operating junction (T ): -55° C to +175° C
Storage: -65° C to +200° C
j
12-19
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