BZT55F2V4 [TEMIC]
Zener Diode, 2.4V V(Z), 3%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2;
| 型号： | BZT55F2V4 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Zener Diode, 2.4V V(Z), 3%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2 测试 二极管 |
| 文件： | 总6页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
96 12009
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
300K/W
Type
Symbol
Value
500
Unit
mW
mA
C
Power dissipation
Z–current
R
P
thJA
V
Z
I
P /V
V
Z
Junction temperature
Storage temperature range
T
175
j
T
stg
–65...+175
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
Value
500
Unit
K/W
Junction ambient
R
thJA
Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol
Min
Typ
Max
1.5
Unit
V
V
F
F
TELEFUNKEN Semiconductors
1 (6)
Rev. A2, 24-Jun-96
BZT55C...
1)
2)
Type
BZT55C...
2 V 4
2 V 7
3 V 0
3 V 3
3 V 6
3 V 9
4 V 3
4 V 7
5 V 1
5 V 6
6 V 2
6 V 8
7 V 5
8 V 2
9 V 1
10
V
I
for
V
and r
r
at I
I
and I
at V
TK
VZ
Znom
ZT
ZT
zjT
zjk
ZK
R
R
R
V
mA
5
V
mA
1
A
A
V
%/K
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.28 to 2.56 < 85
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 10
< 4
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
1
1
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
5
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
5.2 to 6.0
5.8 to 6.6
6.4 to 7.2
7.0 to 7.9
7.7 to 8.7
8.5 to 9.6
9.4 to 10.6
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
1
5
1
1
5
1
< 2
1
5
1
< 2
1
5
1
< 2
1
5
1
< 1
1
5
1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
1
5
1
1
5
1
< 2
1
5
1
< 2
2
5
1
< 2
3
5
< 7
1
< 2
5
5
< 7
< 50
1
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
5
< 10
< 15
< 50
1
< 2
5
< 70
1
< 2
11
11
5
10.4 to 11.6 < 20
11.4 to 12.7 < 20
12.4 to 14.1 < 26
13.8 to 15.6 < 30
15.3 to 17.1 < 40
16.8 to 19.1 < 50
18.8 to 21.2 < 55
20.8 to 23.3 < 55
22.8 to 25.6 < 80
25.1 to 28.9 < 80
< 70
1
< 2
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
12
12
5
< 90
1
< 2
13
13
5
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
1
< 2
15
15
5
1
< 2
16
16
5
1
< 2
18
18
5
1
< 2
20
20
5
1
< 2
22
22
5
1
< 2
24
24
5
1
< 2
27
27
5
1
< 2
30
30
5
28 to 32
31 to 35
34 to 38
37 to 41
40 to 46
44 to 50
48 to 54
52 to 60
58 to 66
64 to 72
70 to 79
< 80
< 80
< 80
< 90
< 90
1
< 2
33
33
5
1
< 2
36
36
5
1
< 2
39
39
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
< 5
43
43
< 5
47
47
< 110 < 700
< 125 < 700
< 5
51
51
< 10
< 10
< 10
< 10
< 10
56
56
< 135 < 1000 0.5
< 150 < 1000 0.5
< 200 < 1000 0.5
< 250 < 1500 0.5
2)
62
62
68
68
75
75
1)
t /T ≤ 100 ms,
p
at T = 150°C
j
tighter tolerances available on request:
BZT55A...
BZT55B...
BZT55F...
1% of V
2% of V
3% of V
Znom
Znom
Znom
2 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
BZT55C...
Typical Characteristics (Tj = 25 C unless otherwise specified)
600
500
400
300
200
100
0
15
10
5
I =5mA
Z
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
95 9602
T
amb
– Ambient Temperature ( °C )
95 9600
V – Z-Voltage ( V )
Z
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
T =25°C
j
150
100
10
1
V =2V
R
T =25°C
j
100
50
0
I =5mA
Z
25
25
0
5
10
15
20
0
5
10
V – Z-Voltage ( V )
Z
15
20
95 9598
V – Z-Voltage ( V )
Z
95 9601
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T =25 C
Figure 5. Diode Capacitance vs. Z–Voltage
amb
100
1.3
1.2
1.1
V
=V /V (25°C)
Zt Z
Ztn
10
1
–4
TK =10 10 /K
VZ
–4
8
6
10 /K
T =25°C
j
–4
10 /K
–4
4
2
10 /K
–4
10 /K
0
0.1
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
0.01
0.001
1.0
240
0
0.2
0.4
0.6
0.8
–60
0
60
120
180
95 9605
V – Forward Voltage ( V )
F
95 9599
T – Junction Temperature ( °C )
j
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 6. Forward Current vs. Forward Voltage
TELEFUNKEN Semiconductors
3 (6)
Rev. A2, 24-Jun-96
BZT55C...
100
1000
100
10
80
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
95 9604
V
– Z-Voltage ( V )
95 9606
V – Z-Voltage ( V )
Z
Z
Figure 9. Differential Z–Resistance vs. Z–Voltage
Figure 7. Z–Current vs. Z–Voltage
50
40
30
P
T
=500mW
tot
=25°C
amb
20
10
0
35
15
20
25
V – Z-Voltage ( V )
Z
30
95 9607
Figure 8. Z–Current vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r
T/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10. Thermal Response
4 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
BZT55C...
Dimensions in mm
96 12071
TELEFUNKEN Semiconductors
5 (6)
Rev. A2, 24-Jun-96
BZT55C...
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
6 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
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