BZW03C120 [TEMIC]

Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon,;
BZW03C120
型号: BZW03C120
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon,

测试 二极管
文件: 总5页 (文件大小:69K)
中文:  中文翻译
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BZW03C...  
Silicon Z–Diodes and Transient Voltage Suppressors  
Features  
Glass passivated junction  
Hermetically sealed package  
Clamping time in picoseconds  
Applications  
Voltage regulators and transient suppression circuits  
94 9588  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
Unit  
W
l=10mm, T =25 C  
P
V
6.0  
1.85  
20  
Power dissipation  
L
T
=45 C  
P
V
W
amb  
Repetitive peak reverse power  
dissipation  
P
ZRM  
W
Non repetitive peak surge power  
dissipation  
t =100 s, T =25 C  
P
ZSM  
1000  
W
p
j
Junction temperature  
T
175  
C
C
j
Storage temperature range  
T
stg  
–65...+175  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
Value  
30  
Unit  
K/W  
K/W  
l=25mm, T =constant  
R
thJA  
Junction ambient  
L
on PC board with spacing 37.5mm  
R
thJA  
70  
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =1A  
Type  
Symbol  
Min  
Typ  
Max  
1.2  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (5)  
Rev. A1, 12-Dec-94  
BZW03C...  
Characteristics when used as voltage regulator diodes, Tj = 25°C  
Type  
V
Z’  
r
zj  
and  
TK  
at  
i
Z
I
at V  
R
VZ  
R
BZW03C...  
V
%/K  
mA  
A
V
Min.  
7.0  
7.0  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
Typ.  
7.5  
Max.  
7.9  
Typ.  
0.7  
0.8  
0.9  
1.0  
1.1  
1.1  
1.2  
1.2  
1.3  
1.3  
1.5  
1.6  
1.8  
2.5  
4
Max.  
1.5  
1.5  
2.0  
2.0  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
3.0  
3.5  
3.5  
5.0  
8
Min.  
0
Max.  
0.07  
0.08  
0.08  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
Max.  
1500  
1200  
10  
20  
15  
10  
4
7V5  
8V2  
9V1  
10  
175  
150  
150  
125  
125  
100  
100  
75  
75  
65  
65  
50  
50  
50  
40  
40  
30  
30  
30  
25  
25  
20  
20  
20  
20  
15  
15  
12  
12  
10  
10  
8
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
8.2  
8.7  
0.03  
0.03  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
9.1  
9.6  
10.0  
11.0  
12.0  
13.0  
15.0  
16.0  
18.0  
20.0  
22.0  
24.0  
27.0  
30  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
11  
12  
13  
15  
2
11  
16  
2
12  
18  
2
13  
20  
2
15  
22  
2
16  
24  
2
18  
27  
2
20  
30  
2
22  
33  
31  
33  
35  
5
10  
2
24  
36  
34  
36  
38  
6
11  
2
27  
39  
37  
39  
41  
7
14  
2
30  
43  
40  
43  
46  
10  
20  
2
33  
47  
44  
47  
50  
12  
25  
2
36  
51  
48  
51  
54  
14  
27  
2
39  
56  
52  
56  
60  
18  
35  
2
43  
62  
58  
62  
66  
20  
42  
2
47  
68  
64  
68  
72  
22  
44  
2
51  
75  
70  
75  
79  
25  
45  
2
56  
82  
77  
82  
87  
30  
65  
2
62  
91  
85  
91  
96  
40  
75  
2
68  
100  
110  
120  
130  
150  
160  
180  
200  
220  
240  
270  
94  
100  
110  
120  
130  
150  
160  
180  
200  
220  
240  
270  
106  
116  
127  
141  
156  
171  
191  
212  
233  
256  
289  
45  
90  
2
75  
104  
114  
124  
138  
153  
168  
188  
208  
228  
251  
65  
125  
170  
190  
330  
350  
430  
500  
700  
900  
1200  
2
82  
90  
2
91  
100  
150  
180  
210  
250  
350  
450  
600  
2
100  
110  
120  
130  
150  
160  
180  
200  
2
8
2
5
2
5
2
5
2
5
2
5
2
2 (5)  
TELEFUNKEN Semiconductors  
Rev. A1, 12-Dec-94  
BZW03C...  
Characteristics when used as transient suppressor diodes, Tj = 25°C  
1)  
2)  
1)  
2)  
Type  
I
at  
V
V(  
I
Type  
BZW03C...  
47  
I
at  
V
V(  
I
(BR) S  
R
R
BR)  
(BR) S  
R
R
BR)  
BZW03C...  
7V5  
8V2  
9V1  
10  
A
V
V
A
A
V
V
A
3000  
2400  
100  
40  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
11  
11.3  
12.3  
13.3  
14.8  
15.7  
17.0  
18.9  
20.9  
22.9  
25.6  
28.4  
31.0  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
44.2  
40.6  
37.6  
34.0  
31.8  
29.4  
26.4  
23.9  
21.8  
19.5  
17.6  
16.1  
14.8  
13.1  
11.8  
10.8  
10.0  
9.2  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
39  
43  
65.5  
70.8  
78.6  
86.5  
94.4  
7.6  
7.0  
6.3  
5.8  
5.3  
4.8  
4.3  
3.9  
3.6  
3.3  
3.0  
2.7  
2.4  
2.2  
2.0  
1.8  
1.6  
1.5  
1.3  
51  
56  
47  
62  
51  
11  
30  
68  
56  
12  
20  
75  
62  
103.5  
114  
126  
139  
152  
167  
185  
204  
224  
249  
276  
305  
336  
380  
13  
10  
82  
68  
15  
10  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
91  
75  
16  
10  
100  
110  
120  
130  
150  
160  
180  
200  
220  
240  
270  
82  
18  
10  
91  
20  
10  
100  
110  
120  
130  
150  
160  
180  
200  
220  
22  
10  
24  
10  
27  
10  
30  
10  
33  
10  
36  
10  
39  
10  
43  
10  
8.2  
1)  
2)  
Stand-off reverse voltage = recommended supply voltage  
exp. falling pulse, t = 500 s down to 37%  
p
Typical Characteristics (Tj = 25 C unless otherwise specified)  
8
50  
3
l
l
l=10mm  
15mm  
6
4
2
0
T =constant  
L
20mm  
37.5  
50  
see Fig.1  
80  
200  
0
40  
120  
160  
94 9087  
7
2
95 9608  
T
amb  
– Ambient Temperature ( °C )  
Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm,  
70 K/W  
Figure 2. Total Power Dissipation vs. Ambient Temperature  
R
thJA  
TELEFUNKEN Semiconductors  
3 (5)  
Rev. A1, 12-Dec-94  
BZW03C...  
6
5
4
10000  
1000  
100  
t
p
T =25°C  
j
3
2
1
0
T =25°C  
j
10  
2.0  
100  
0
0.5  
1.0  
1.5  
0.01  
0.1  
1
10  
95 9609  
V
– Forward Voltage ( V )  
95 9610  
t – Pulse Length ( ms )  
p
F
Figure 3. Forward Current vs. Forward Voltage  
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse  
Length  
Dimensions in mm  
4.3 max.  
Sintered Glass Case  
SOD 64  
Cathode Identification  
technical drawings  
according to DIN  
specifications  
Weight max. 1.0g  
1.35 max.  
26 min.  
26 min.  
4.2 max.  
94 9587  
4 (5)  
TELEFUNKEN Semiconductors  
Rev. A1, 12-Dec-94  
BZW03C...  
Ozone Depleting Substances Policy Statement  
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of  
continuous improvements to eliminate the use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain  
such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized  
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,  
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
TELEFUNKEN Semiconductors  
5 (5)  
Rev. A1, 12-Dec-94  

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