概述
规格参数
数据手册DG201HSAK/883 概述
High-Speed Quad SPST CMOS Analog Switch 高速四通道SPST CMOS模拟开关 复用器或开关
DG201HSAK/883 规格参数
| 生命周期： | Transferred | Reach Compliance Code： | unknown |
| 风险等级： | 5.55 | 模拟集成电路 - 其他类型： | SPST |
| JESD-30 代码： | R-GDIP-T16 | 标称负供电电压 (Vsup)： | -15 V |
| 信道数量： | 1 | 功能数量： | 4 |
| 端子数量： | 16 | 标称断态隔离度： | 85 dB |
| 通态电阻匹配规范： | 1.5 Ω | 最大通态电阻 (Ron)： | 50 Ω |
| 最高工作温度： | 125 °C | 最低工作温度： | -55 °C |
| 封装主体材料： | CERAMIC, GLASS-SEALED | 封装形状： | RECTANGULAR |
| 封装形式： | IN-LINE | 认证状态： | Not Qualified |
| 标称供电电压 (Vsup)： | 15 V | 表面贴装： | NO |
| 最长断开时间： | 50 ns | 最长接通时间： | 50 ns |
| 技术： | CMOS | 温度等级： | MILITARY |
| 端子形式： | THROUGH-HOLE | 端子位置： | DUAL |
| Base Number Matches： | 1 |
DG201HSAK/883 数据手册
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PDF下载DG201HS
High-Speed Quad SPST CMOS Analog Switch
Features
Benefits
Applications
D Fast Switching—tON: 38 ns
D Low On-Resistance: 25 W
D Low Leakage: 100 pA
D Faster Throughput
D Data Acquisition
D Higher Accuracy
D Hi-Rel Systems
D Reduced Pedestal Error
D Upgrades Existing Designs
D Simple Interfacing
D Sample-and-Hold Circuits
D Communication Systems
D Automatic Test Equipment
D Low Charge Injection
D TTL/CMOS Logic Compatible
D Single Supply Compatibility
D High Current Rating: –30 mA
D Replaces HI201HS, ADG201HS D Integrator Reset Circuits
D Space Savings (TSSOP)
D Choppers
D Gain Switching
D Avionics
Description
The DG201HS is an improved monolithic device high-voltage silicon-gate process. An epitaxial layer
containing four independent analog switches. It is prevents latchup.
designed to provide high speed, low error switching of
analog signals. Combining low on-resistance (25 W) with
Each switch conducts equally well in both directions
when on, and blocks input voltages to the supply values,
when off.
high speed (t : 38 ns), the DG201HS is ideally suited for
ON
high speed data acquisition requirements.
To achieve high voltage ratings and superior switching
performance, the DG201HS is built on a proprietary
Functional Block Diagram and Pin Configuration
LCC
Dual-In-Line, SOIC and TSSOP
D
IN NC IN
D
2
1
1
2
Key
IN
D
S
IN
2
1
1
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
3
2
1
20 19
D
2
4
5
6
7
8
18
17
16
S
S
2
1
Truth Table
S
2
V–
NC
V+
NC
NC
Logic
Switch
ON
V–
V+
NC
0
1
GND
15
14
OFF
GND
S
S
3
4
4
4
Logic “0” v 0.8 V
S
4
S
3
D
D
Logic “1” w 2.4 V
3
9
10 11 12 13
IN
IN
3
D
IN NC IN
D
3
4
4
3
Top View
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70038.
Siliconix
1
E-77071—Rev. E, 01-Sep-97
DG201HS
Ordering Information
Temp Range
Package
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin CerDIP
LCC-20
Part Number
DG201HSDJ
DG201HSDY
–40 to 85_C
DG201HSDQ
DG201HSAK/883
DG201HSAZ/883
–55 to 125_C
Absolute Maximum Ratings
d
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
16-Pin CerDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
e
16-Pin Narrow Body SOIC and TSSOP . . . . . . . . . . . . . . . . 600 mW
LCC-20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
d
a
Digital Inputs V , V . . . . . . . . . . . . . . . . . . (V–) –4 V to (V+) +4 V
S
D
or 30 mA, whichever occurs first
Notes:
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . 100 mA
a. Signals on S , D , or IN exceeding V+ or V– will be clamped
X
X
X
by internal diodes. Limit forward diode current to maximum
current ratings.
Storage Temperature
(A Suffix) . . . . . . . . . . . . . –65 to 150_C
(D Suffix) . . . . . . . . . . . . . –65 to 125_C
b. All leads welded or soldered to PC board.
c. Derate 6 mW/_C above 75_C.
Power Dissipation (Package)b
d. Derate 12 mW/_C above 75_C.
e. Derate 7.6 mW/_C above 75_C.
c
16-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
Schematic Diagram (Typical Channel)
V+
S
X
5 V
Reg
Level
Shift/
Drive
V–
V+
IN
D
X
X
GND
V–
Figure 1.
2
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Specificationsa
Conditions Unless
A Suffix
D Suffix
Otherwise Specified
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –15 V
f
Parameter
Symbol
V
= 3 V, 0.8 V
Tempb Typc Mind Maxd Mind Maxd Unit
IN
Analog Switch
e
Analog Signal Range
V
Full
V–
V+
V–
V+
V
W
%
ANALOG
I
= –10 mA, V = "8.5 V
Room
Full
25
50
75
50
75
S
D
Drain-Source On-Resistance
r
DS(on)
V+ = 13.5 V, V– = –13.5 V
r
Match
Room
3
DS(on)
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
I
S(off)
V+ = 16.5 V, V– = –16.5 V
V
V
"15.5 V
Switch Off Leakage Current
D =
Room
Full
0.1
0.1
–1
–60
1
60
–1
–20
1
20
= #15.5 V
S
I
nA
D(off)
V+ = 16.5 V, V– = –16.5 V
Room
Full
–1
–60
1
60
–1
–20
1
20
Channel On Leakage Current
I
D(on)
V
= V = #15.5 V
S
D
Digital Control
Input, High Voltage
Input, Low Voltage
Input Capacitance
V
Full
Full
Full
2.4
–1
2.4
–1
INH
V
V
0.8
1
0.8
1
INL
C
5
pF
in
I
or
INL
Input Current
V
under test = 0.8 V, 3 V
Full
mA
IN
I
INH
Dynamic Characteristics
Turn-On Time
Room
Full
48
30
60
75
60
75
t
ON
R
= 1 kW, C = 35 pF
L
L
Room
Full
50
70
50
70
V
= "10 V, V
= 3 V
S
INH
t
OFF1
ns
See Figure 3
Turn-Off Time
t
Room
Room
150
180
OFF2
Output Settling Time to 0.1%
Charge Injection
t
s
C
= 1 nF, V = 0 V
S
L
Q
Room
Room
–5
85
pC
dB
V
= 0 V, R = 0 W
gen
gen
R
L
= 1 kW, C = 10 pF
L
OFF Isloation
OIRR
f = 100 kHz
Any Other Channel Switches
Crosstalk
(Channel-to-Channel)
R
L
= 1 kW, C = 10 pF
X
Room
100
L
TALK
f = 100 kHz
Source Off Capacitance
Drain Off Capacitance
C
Room
Room
Room
Room
8
8
S(off)
C
D(off)
V , V = 0 V, f = 1 MHz
pF
S
D
Channel On Capacitance
Drain-to-Source Capacitance
C
D(on)
30
0.5
C
DS(off)
Power Supplies
Room
Full
4.5
3.5
Positive Supply Current
I+
I–
10
10
mA
V+ = 15 V, V– = –15 V
= 0 or 5 V
Room
Full
V
Negative Supply Current
IN
–6
–6
c
Power Consumption
P
C
Full
240
240
mW
Siliconix
3
E-77071—Rev. E, 01-Sep-97
DG201HS
Specificationsa for Single Supply
Conditions Unless
Otherwise Specified
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
V+ = 10.8 V to 16.5 V
V– = GND = 0 V
f
Parameter
Analog Switch
Symbol
Tempb Typc Mind Maxd Mind Maxd Unit
V
= 3 V, 0.8 V
IN
e
Analog Signal Range
V
Full
0
V+
0
V+
V
ANALOG
I
= –10 mA, V = 8.5 V
Room
Full
65
0.1
0.1
0.1
90
120
90
120
S
D
Drain-Source On-Resistance
r
W
DS(on)
V+ = 10.8 V
Room
Full
–1
–60
1
60
–1
–20
1
20
I
S(off)
D(off)
V+ = 16.5 V, V = 0.5 V, 10 V
S
Switch Off Leakage Current
Channel On Leakage Current
V
= 10 V, 0.5 V
D
Room
Full
–1
–60
1
60
–1
–20
1
20
I
nA
I
+
S(on)
Room
Full
–1
–60
1
60
–1
–20
1
20
D(on)
I
V+ = 16.5 V, V = 0.5 V, 10 V
D
Digital Control
Input, High Voltage
Input, Low Voltage
Input Capacitance
V
Full
Full
Full
2.4
–1
2.4
–1
INH
V
V
0.8
1
0.8
1
INL
C
5
pF
in
I
or
V+ = 16.5 V
under test = 0.8 V, 3 V
INL
Input Current
Full
mA
I
V
INH
IN
Dynamic Characteristics
Turn-On Time
Room
Full
50
70
50
70
t
ON
R
L
= 1 kW, C = 35 pF, V = 2 V
L S
V= 10.8 V, See Figure 2
Room
Full
50
70
50
70
t
OFF1
ns
Turn-Off Time
t
Room
Room
150
180
OFF2
Output Settling Time to 0.1%
Charge Injection
t
s
C
= 1 nF, V = 0 V
S
L
Q
Room
Room
10
85
pC
dB
V
= 0 V, R = 0 W
gen
gen
R
L
= 1 kW, C = 10 pF
L
Off Isloation
OIRR
f = 100 kHz
Any Other Channel Switches
Crosstalk
(Channel-to-Channel)
R
L
= 1 kW, C = 10 pF
X
Room
100
L
TALK
f = 100 kHz
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
C
Room
Room
Room
10
10
30
S(off)
f = 1 MHz
C
D(off)
pF
C
D(on)
V
= 0 V
ANALOG
Power Supplies
Positive Supply Current
I+
Full
Full
10
10
mA
V+ = 15 V, V = 0 or 5 V
IN
c
Power Consumption
P
C
150
150
mW
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
= input voltage to perform proper function.
IN
4
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Typical Characteristics
rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
70
60
50
40
30
20
10
0
50
40
30
20
10
0
V+ = 15 V
V– = –15 V
125_C
85_C
"5 V
"10 V
25_C
"15 V
0_C
–55_C
"20 V
–20 –16 –12 –8 –4
0
4
8
12 16 20
–15
–10
–5
0
5
10
15
V
– Drain Voltage (V)
V – Drain Voltage (V)
D
D
rDS(on) vs. VD and Single Power Supply Voltages
Leakage Currents vs. Temperature
10 nA
1 nA
180
V+ = 5 V
160
140
120
100
80
7 V
I
D(on)
10 V
60
100 pA
I
I
S(off), D(off)
12 V
15 V
14
40
20
0
10 pA
0
2
4
6
8
10
12
16
–60 –40 –20
0
20 40 60 80 100 120 140
V
– Drain Voltage (V)
Temperature (_C)
D
Input Switching Threshold vs. Supply Voltage
Switching Time vs. Power Supply Voltage
55
50
45
40
35
30
2.5
2
1.5
1
t
ON
0.5
0
t
OFF
"4 "6 "8 "10 "12 "14 "16 "18 "20
"4 "6 "8 "10 "12 "14 "16 "18 "20
Positive/Negative Supplies (V)
Supply Voltage (V)
Siliconix
5
E-77071—Rev. E, 01-Sep-97
DG201HS
Typical Characteristics (Cont’d)
Switching Times vs. Temperature
Switching Times vs. Single Supply Voltage
65
60
55
50
45
40
35
30
45
V+ = 15 V
V– = –15 V
t
ON
40
35
30
25
20
t
OFF
t
ON
t
OFF
4
6
8
10
12
14
16
18
20
–55
–25
0
25
50
75
100 125
Temperature (_C)
V+ – Positive Supply (V)
Switching Times vs. Temperature
Charge Injection vs. Source Voltage
20
10
50
45
40
35
30
25
20
V+ = 15 V, V– = 0 V
V+ = 10.8 V
V– = 0 V
0
t
ON
–10
–20
–30
–40
V+ = 15 V
V– = –15 V
t
OFF
–55
–25
0
25
50
75
100 125
–15
–10
–5
V – Source Voltage (V)
S
0
5
10
15
Temperature (_C)
Off Isolation vs. Frequency
120
V+ = 15 V
V– = –15 V
110
100
90
R
= 100 W
L
80
70
R
L
= 1 kW
60
50
40
10 k
100 k
1 M
10 M
f – Frequency (Hz)
6
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Test Circuits
+15 V
V+
3 V
0 V
Logic
Input
t <20 ns
t <20 ns
f
r
50%
S
D
"10 V
V
O
t
IN
OFF1
Switch
Input
V
S
R
1 kW
C
L
35 pF
L
3 V
GND
V–
90%
10%
Switch
Output
V
O
t
t
–15 V
(includes fixture and stray capacitance)
ON
OFF2
C
L
R
L
V
= V
S
O
R
L
+ r
DS(on)
Figure 2. Switching Time
+15 V
V+
DV
R
g
O
S
D
V
O
V
O
IN
GND
C
1 nF
L
3 V
IN
X
V–
SW
OFF
ON
–15 V
Q = DV x C
O
L
Figure 3. Charge Injection
+15 V
V+
C
+15 V
C
S
1
D
V
1
2
S
R = 50 W
V+
g
50 W
V
IN
O
1
2
S
D
V
S
0V, 2.4 V
NC
0V, 2.4 V
R = 50 W
g
S
2
D
R
L
V
O
IN
0V, 2.4 V
R
L
IN
GND
V–
C
V
GND
V–
C
–15 V
–15 V
V
V
S
S
X
Isolation = 20 log
Off Isolation = 20 log
TALK
V
O
O
C = RF bypass
Figure 4. Off Isolation
Figure 5. Crosstalk
Siliconix
E-77071—Rev. E, 01-Sep-97
7
DG201HS
Applications
A high-speed, low-glitch analog switch such as Siliconix’s DG201HS improves the accuracy and shortens the acquisition
and settling times of a sample-and-hold circuit.
Input
Buffer
DG201HS
JFET Buffer
OUTPUT
to A/D Converter
V
ANALOG
CH
(Polystyrene)
Si581
SAMPLE/HOLD
8
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HSAK/883 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| DG201HSAZ/883 | TEMIC | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSAZ/883 | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDJ | TEMIC | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDJ | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDJ-E3 | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDQ | TEMIC | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDQ | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDQ-E3 | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDQ-T1 | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
| DG201HSDQ-T1-E3 | VISHAY | High-Speed Quad SPST CMOS Analog Switch | 获取价格 |
|
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