MMDP-67204E-40QM [TEMIC]

FIFO, 4KX9, 40ns, Asynchronous, CMOS, PDFP28, 400 MIL, FLAT PACK, 28 PIN;
MMDP-67204E-40QM
型号: MMDP-67204E-40QM
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

FIFO, 4KX9, 40ns, Asynchronous, CMOS, PDFP28, 400 MIL, FLAT PACK, 28 PIN

先进先出芯片 光电二极管
文件: 总15页 (文件大小:104K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
M67204E  
4 K 9 CMOS Parallel FIFO Rad Tolerant  
Introduction  
The M67204E implement a first-in first-out algorithm, Using an array of eigh transistors (8 T) memory cell, the  
featuring asynchronous read/write operations. The FULL M67204E combine an extremely low standby supply  
and EMPTY flags prevent data overflow and underflow. current (typ = 1.0 µA) with a fast access time at 40 ns  
The Expansion logic allows unlimited expansion in word over the full temperature range. All versions offer battery  
size and depth with no timing penalties. Twin address backup data retention capability with a typical power  
pointers automatically generate internal read and write consumption at less than 2 µW.  
addresses, and no external address information are  
The M67204E is processed according to the methods of  
required for the TEMIC FIFOs. Address pointers are  
the latest revision of the MIL STD 883 (class B or S), ESA  
automatically incremented with the write pin and read  
SCC 9000 and QML.  
pin. The 9 bits wide data are used in data communications  
applications where a parity bit for error checking is  
necessary. The Retransmit pin resets the Read pointer to  
zero without affecting the write pointer. This is very  
useful for retransmitting data when an error is detected in  
the system.  
Features  
D First-in first-out dual port memory  
D 4096 × 9 organisation  
D Fully expandable by word width or depth  
D Asynchronous read/write operations  
D Empty, full and half flags in single device mode  
D Retransmit capability  
D Fast access time: 40, 50 ns  
D Wide temperature range : – 55 °C to + 125 °C  
D Bi-directional applications  
D Battery back-up operation 2 V data retention  
D TTL compatible  
D Single 5 V ± 10 % power supply  
D High performance SCMOS technology  
1
Rev. F – June 30, 1999  
M67204E  
Interface  
Block Diagram  
Pin Configuration  
DIL ceramic 28 pin 600 mils  
FP 28 pin 400 mils (Preview)  
(top view)  
W
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
I
8
I
3
I
2
I
1
I
0
2
I
I
I
I
4
3
5
6
7
4
5
6
FL/RT  
RS  
XI  
7
FF  
8
EF  
Q
Q
Q
Q
Q
9
XO/HF  
0
1
2
3
8
10  
11  
12  
13  
14  
Q
Q
Q
Q
R
7
6
5
4
GND  
2
Rev. F – June 30, 1999  
M67204E  
Pin Names  
NAMES  
DESCRIPTION  
NAMES  
FF  
DESCRIPTION  
I0–8  
Q0–8  
W
Inputs  
Full Flag  
Outputs  
XO/HF  
XI  
Expansion Out/Half-Full Flag  
Expansion IN  
Write Enable  
Read Enable  
Reset  
R
FL/RT  
VCC  
First Load/Retransmit  
Power Supply  
RS  
EF  
Empty Flag  
GND  
Ground  
Signal Description  
pointers to the first location. A reset is required after  
power-up before a write operation can be enabled. Both  
the Read Enable (R) and Write Enable (W) inputs must be  
in the high state during the period shown in figure 1 (i.e.  
Data In (I0 - I8)  
Data inputs for 9-bit data  
t
before the rising edge of RS) and should not change  
RSS  
Reset (RS)  
until t  
after the rising edge of RS. The Half-Full Flag  
RSR  
(HF) will be reset to high after Reset (RS).  
Reset occurs whenever the Reset (RS) input is taken to a  
low state. Reset returns both internal read and write  
Figure 1. Reset.  
Notes : 1. EF, FF and HF may change status during reset, but flags will be valid at t  
.
RSC  
2. W and R = V around the rising edge of RS.  
IH  
or equal to half of the total available memory in the  
device. The Half-Full Flag (HF) is then reset by the rising  
edge of the read operation.  
Write Enable (W)  
A write cycle is initiated on the falling edge of this input  
if the Full Flag (FF) is not set. Data set-up and hold times  
must be maintained in the rise time of the leading edge of  
the Write Enable (W). Data is stored sequentially in the  
Ram array, regardless of any current read operation.  
To prevent data overflow, the Full Flag (FF) will go low,  
inhibiting further write operations. On completion of a  
valid read operation, the Full Flag (FF) will go high after  
TRFF, allowing a valid write to begin. When the FIFO  
stack is full, the internal write pointer is blocked from W,  
so that external changes to W will have no effect on the  
full FIFO stack.  
Once half of the memory is filled, and during the falling  
edge of the next write operation, the Half-Full Flag (HF)  
will be set to low and remain in this state until the  
difference between the write and read pointers is less than  
3
Rev. F – June 30, 1999  
M67204E  
Read Enable (R)  
Expansion In (XI)  
This input is a dual-purpose pin. Expansion In (XI )is  
connected to GND to indicate an operation in the single  
device mode. Expansion In (XI) is connected to  
Expansion Out (XO) of the previous device in the Depth  
Expansion or Daisy Chain modes.  
A read cycle is initiated on the falling edge of the Read  
Enable (R) provided that the Empty Flag (EF) is not set.  
The data is accessed on a first in/first out basis, not with  
standing any current write operations. After Read Enable  
(R) goes high, the Data Outputs (Q0 – Q8) will return to  
a high impedance state until the next Read operation.  
When all the data in the FIFO stack has been read, the  
Empty Flag (EF) will go low, allowing the “final” read  
cycle, but inhibiting further read operations whilst the  
data outputs remain in a high impedance state. Once a  
valid write operation has been completed, the Empty Flag  
(EF) will go high after tWEF and a valid read may then  
be initiated. When the FIFO stack is empty, the internal  
read pointer is blocked from R, so that external changes  
to R will have no effect on the empty FIFO stack.  
Full Flag (FF)  
The Full Flag (FF) will go low, inhibiting further write  
operations when the write pointer is one location less than  
the read pointer, indicating that the device is full. If the  
read pointer is not moved after Reset (RS), the Full Flag  
(FF) will go low after 4096 writes.  
Empty Flag (EF)  
The Empty Flag (EF) will go low, inhibiting further read  
operations when the read pointer is equal to the write  
pointer, indicating that the device is empty.  
First Load/Retransmit (FL/RT)  
Expansion Out/Half-full Flag (XO/HF)  
This is a dual-purpose input. In the Depth Expansion  
Mode, this pin is connected to ground to indicate that it  
is the first loaded (see Operating Modes). In the Single  
Device Mode, this pin acts as the retransmit input. The  
Single Device Mode is initiated by connecting the  
Expansion In (XI) to ground.  
This is a dual-purpose output. In the single device mode,  
when Expansion In (XI) is connected to ground, this  
output acts as an indication of a half-full memory.  
After half the memory is filled and on the falling edge of  
the next write operation, the Half-Full Flag (HF) will be  
set to low and will remain set until the difference between  
the write and read pointers is less than or equal to half of  
the total memory of the device. The Half-Full Flag (HF)  
is then reset by the rising edge of the read operation.  
The M67204E can be made to retransmit data when the  
Retransmit Enable Control (RT) input is pulsed low. A  
retransmit operation will set the internal read point to the  
first location and will not affect the write pointer. Read  
Enable (R) and Write Enable (W) must be in the high state  
during retransmit. The retransmit feature is intended for  
use when a number of writes equals to or less than the  
depth of the FIFO have occured since the last RS cycle.  
The retransmit feature is not compatible with the Depth  
Expansion Mode and will affect the Half-Full Flag (HF),  
in accordance with the relative locations of the read and  
write pointers.  
In the Depth Expansion Mode, Expansion In (XI) is  
connected to Expansion Out (XO) of the previous device.  
This output acts as a signal to the next device in the Daisy  
Chain by providing a pulse to the next device when the  
previous device reaches the last memory location.  
Data Output (Q0 – Q8)  
DATA output for 9-bit wide data. This data is in a high  
impedance condition whenever Read (R) is in a high state.  
4
Rev. F – June 30, 1999  
M67204E  
Functional Description  
Operating Modes  
in a Single Device Configuration when the Expansion In  
(XI) control input is grounded (see Figure 2). In this mode  
Single Device Mode  
A single M67204E may be used when the application the Half-Full Flag (HF), which is an active low output, is  
requirements are for 4096 words or less. The M67204E is shared with Expansion Out (XO).  
Figure 2. Block Diagram of Single 4K × 9 FIFO.  
HF  
(HALF–FULL FLAG)  
(W)  
9
(R)  
(Q)  
READ  
WRITE  
9
DATA  
DATA  
OUT  
IN  
(I)  
M
67204E  
(EF)  
(RT)  
EMPTY FLAG  
RETRANSMIT  
FULL FLAG (FF)  
(RS)  
RESET  
EXPANSION IN (XI)  
Status flags (EF, FF and HF) can be detected from any  
device. Figure 3 demonstrates an 18-bit word width by  
Width Expansion Mode  
Word width may be increased simply by connecting the using two M67204E. Any word width can be attained by  
corresponding input control signals of multiple devices. adding additional M67204E.  
Figure 3. Block Diagram of 4096 × 18 FIFO Memory Used in Width Expansion Mode.  
HF  
HF  
18  
9
9
DATA (I)  
IN  
(R) READ  
(EF) EMPTY FLAG  
(RT) RETRANSMIT  
WRITE  
(W)  
M
M
FULL FLAG  
RESET  
(FF)  
67204E  
67204E  
9
(RS)  
9
XI  
XI  
18  
(Q) DATA  
OUT  
Note : 3. Flag detection is accomplished by monitoring the FF, EF and the HF signals on either (any) device used in the width  
expansion configuration. Do not connect any output control signals together.  
5
Rev. F – June 30, 1999  
M67204E  
Table 1 : Reset and retransmit  
Single Device Configuration/Width Expansion Mode  
INPUTS  
INTERNAL STATUS  
Read Pointer Write Pointer  
OUTPUTS  
MODE  
RS  
0
RT  
X
XI  
0
EF  
0
FF  
1
HF  
1
Reset  
Location Zero  
Location Zero  
Location Zero  
Unchanged  
Retransmit  
Read/Write  
1
0
0
X
X
X
(4)  
(4)  
1
1
0
Increment  
Increment  
X
X
X
Note : 4. Pointer will increment if flag is high.  
Table 2 : Reset and First Load Truth Table  
Depth Expansion/Compound Expansion Mode  
INPUTS  
INTERNAL STATUS  
OUTPUTS  
MODE  
RS  
0
FL  
0
XI  
(5)  
(5)  
(5)  
Read Pointer  
Write Pointer  
Location Zero  
Location Zero  
X
EF  
FF  
1
Reset First Device  
Reset All Other Devices  
Read/Write  
Location Zero  
Location Zero  
X
0
0
0
1
1
1
X
X
X
Note : 5. XI is connected to XO of previous device.  
See fig. 5.  
Depth Expansion (Daisy Chain) Mode  
Compound Expansion Module  
It is quite simple to apply the two expansion techniques  
described above together to create large FIFO arrays (see  
figure 5).  
The M67204E can be easily adapted for applications  
which require more than 4096 words. Figure 4  
demonstrates Depth Expansion using three M67204E.  
Any depth can be achieved by adding additional  
M67204E.  
Bidirectional Mode  
The M67204E operate in the Depth Expansion  
configuration if the following conditions are met :  
Applications which require data buffering between two  
systems (each system being capable of Read and Write  
operations) can be created by coupling M67204E as  
shown in figure 6. Care must be taken to ensure that the  
appropriate flag is monitored by each system (i.e. FF is  
monitored on the device on which W is in use ; EF is  
monitored on the device on which R is in use). Both Depth  
Expansion and Width Expansion may be used in this  
mode.  
1. The first device must be designated by connecting the  
First Load (FL) control input to ground.  
2. All other devices must have FL in the high state.  
3. The Expansion Out (XO) pin of each device must be  
connected to the Expansion In (XI) pin of the next  
device. See figure 4.  
4. External logic is needed to generate a composite Full  
Flag (FF) and Empty Flag (EF). This requires that all  
EF’s and all FFs be ØRed (i.e. all must be set to  
generate the correct composite FF or EF). See figure 4.  
Data Flow - Through Modes  
Two types of flow-through modes are permitted : a read  
5. The Retransmit (RT) function and Half-Full Flag (HF) flow-through and a write flow-through mode. In the read  
are not available in the Depth Expansion Mode. flow-through mode (figure 17) the FIFO stack allows a  
6
Rev. F – June 30, 1999  
M67204E  
single word to be read after one word has been written to In the write flow-through mode (figure 18), the FIFO  
an empty FIFO stack. The data is enabled on the bus at stack allows a single word of data to be written  
(tWEF + tA) ns after the leading edge of W which is immediately after a single word of data has been read  
known as the first write edge and remains on the bus until from a full FIFO stack. The R line causes the FF to be  
the R line is raised from low to high, after which the bus reset, but the W line, being low, causes it to be set again  
will go into a three-state mode after tRHZ ns. The EF line in anticipation of a new data word. The new word is  
will show a pulse indicating temporary reset and then will loaded into the FIFO stack on the leading edge of W. The  
be set. In the interval in which R is low, more words may W line must be toggled when FF is not set in order to write  
be written to the FIFO stack (the subsequent writes after new data into the FIFO stack and to increment the write  
the first write edge will reset the Empty Flag) ; however, pointer.  
the same word (written on the first write edge) presented  
to the output bus as the read pointer will not be  
incremented if R is low. On toggling R, the remaining  
words written to the FIFO will appear on the output bus  
in accordance with the read cycle timings.  
Figure 4. Block Diagram of 12288 × 9 FIFO Memory (Depth expansion).  
XO  
W
R
FF  
9
EF  
FL  
6
9
M
9
67204E  
Q
V
CC  
FULL  
EMPTY  
FF  
9
EF  
FL  
M
67204E  
EF  
FL  
FF  
9
M
67204E  
RS  
XI  
Figure 5. Compound FIFO Expansion.  
Q
0
– Q  
Q
Q
– Q  
– Q  
Q
Q
– Q  
– Q  
8
9
17  
17  
(N–8)  
N
N
Q
0
– Q  
8
9
(N–8)  
M67204E  
M67204E  
DEPTH  
EXPANSION  
BLOCK  
M67204E  
R . W . RS  
DEPTH  
EXPANSION  
BLOCK  
DEPTH  
EXPANSION  
BLOCK  
I
0
– I  
I
9
– I  
8
17  
I
– I  
N
(N–8)  
I
0
– I  
I
9
– I  
I – I  
(N–8) N  
8
17  
Notes : 6. For depth expansion block see section on Depth Expansion and Figure 4.  
7. For Flag detection see section on Width Expansion and Figure 3.  
7
Rev. F – June 30, 1999  
M67204E  
Figure 6. Bidirectional FIFO Mode.  
R
B
W
A
M
EF  
B
FF  
A
HF  
B
67204  
I
Q
B 0–8  
A 0–8  
SYSTEM A  
SYSTEM B  
Q
A 0–8  
I
B 0–8  
M
67204  
R
W
A
A
A
B
HF  
EF  
FF  
B
Electrical Characteristics  
Absolute Maximum Ratings  
Supply voltage (VCC – GND) . . . . . . . . . . . . . . . . . . – 0.3 V to 7.0 V  
Input or Output voltage applied : . . . . (GND – 0.3 V) to (Vcc + 0.3 V)  
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . – 65 °C to + 150 °C  
OPERATING RANGE  
OPERATING SUPPLY VOLTAGE  
OPERATING TEMPERATURE  
Military  
Vcc = 5 V ± 10 %  
– 55 °C to + 125 °C  
8
Rev. F – June 30, 1999  
M67204E  
DC Parameters  
M M67204E  
– 40  
M M67204E  
– 50  
Parameter  
Description  
UNIT  
VALUE  
I
Operating  
supply current  
135  
125  
mA  
mA  
µA  
Max  
CCOP (8)  
I
Standby  
supply current  
1.5  
1.5  
Max  
Max  
CCSB (9)  
I
Power down  
current  
200  
200  
CCPD (10)  
Notes : 8. Icc measurements are made with outputs open. F = F max  
9. R = W = RS = FL/RT = VIH.  
10. All input = Vcc.  
PARAMETER  
DESCRIPTION  
M67204E  
UNIT  
µA  
µA  
V
VALUE  
ILI (11)  
Input leakage current  
± 1  
± 10  
0.8  
2.2  
0.4  
2.4  
8
Max  
Max  
Max  
Min  
Max  
Min  
Max  
Max  
ILO (12)  
Output leakage current  
Input low voltage  
Input high voltage  
Output low voltage  
Output high voltage  
Input capacitance  
Output capacitance  
VIL (13)  
VIH (13)  
VOL (14)  
VOH (14)  
C IN (15)  
C OUT (15)  
V
V
V
pF  
pF  
8
Notes : 11. 0.4 Vin Vcc.  
12. R = VIH, 0.4 VOUT VCC.  
13. VIH max = Vcc + 0.3 V. VIL min = –0.3 V or –1 V pulse width 50 ns.  
Figure 7. Output Load.  
AC Test Conditions  
5 V  
Input pulse levels  
Input rise/Fall times  
Input timing reference levels  
Output reference levels  
Output load  
: Gnd to 3.0 V  
500  
: 5 ns  
TO  
OUTPUT  
PIN  
: 1.5 V  
: 1.5 V  
: See figure 7  
30 pF*  
333 Ω  
or equivalent circuit  
* includes jig and scope capacitance  
9
Rev. F – June 30, 1999  
M67204E  
M M67204E  
– 40  
M67204E  
– 50  
SYMBOL (16) SYMBOL (17)  
PARAMETER (18) (22)  
UNIT  
MIN.  
MAX.  
MIN.  
MAX.  
READ CYCLE  
TRLRL  
tRC  
Read cycle time  
50  
65  
50  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
TRLQV  
tA  
Access time  
10  
40  
5
40  
TRHRL  
tRR  
Read recovery time  
15  
50  
10  
15  
5
TRLRH  
tRPW  
tRLZ  
tWLZ  
tDV  
Read pulse width (19)  
Read low to data low Z (20)  
Write low to data low Z (20, 21)  
Data valid from read high  
Read high to data high Z (20)  
TRLQX  
TWHQX  
TRHQX  
10  
5
TRHQZ  
tRHZ  
25  
30  
WRITE CYCLE  
TWLWL  
tWC  
tWPW  
tWR  
tDS  
Write cycle time  
Write pulse width (19)  
Write recovery time  
Data set-up time  
Data hold time  
50  
40  
10  
20  
0
65  
50  
15  
30  
0
ns  
ns  
ns  
ns  
ns  
TWLWH  
TWHWL  
TDVWH  
TWHDX  
RESET CYCLE  
TRSLWL  
TRSLRSH  
TWHRSH  
TRSHWL  
tDH  
tRSC  
tRS  
Reset cycle time  
50  
40  
40  
10  
65  
50  
50  
15  
ns  
ns  
ns  
ns  
Reset pulse width (19)  
Reset set-up time  
tRSS  
tRSR  
Reset recovery time  
RETRANSMIT CYCLE  
TRTLWL  
TRTLRTH  
TWHRTH  
TRTHWL  
FLAGS  
tRTC  
tRT  
Retransmit cycle time  
50  
40  
40  
10  
65  
50  
50  
15  
ns  
ns  
ns  
ns  
Retransmit pulse width (19)  
Retransmit set-up time (20)  
Retransmit recovery time  
tRTS  
tRTR  
TRSLEFL  
TRSLFFH  
TRLEFL  
TRHFFH  
TEFHRH  
TWHEFH  
TWLFFL  
TWLHFL  
TRHHFH  
TFFHWH  
tEFL  
Reset to EF low  
50  
50  
30  
35  
60  
60  
45  
45  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tHFH, tFFH  
tREF  
Reset to HF/FF high  
Read low to EF low  
Read high to FF high  
Read width after EF high  
Write high to EF high  
Write low to FF low  
Write low to HF low  
Read high to HF high  
Write width after FF high  
tRFF  
tRPE  
40  
50  
tWEF  
tWFF  
tWHF  
tRHF  
35  
35  
50  
50  
45  
45  
60  
60  
tWPF  
40  
50  
10  
Rev. F – June 30, 1999  
M67204E  
M M67204E  
– 40  
M67204E  
– 50  
SYMBOL (16) SYMBOL (17)  
EXPANSION  
PARAMETER (18) (22)  
UNIT  
MIN.  
MAX.  
MIN.  
MAX.  
PREVIEW  
TWLXOL  
TWHXOH  
TXILXIH  
TXIHXIL  
TXILRL  
tXOL  
tXOH  
tXI  
Read/Write to XO low  
40  
40  
50  
50  
ns  
ns  
ns  
ns  
ns  
Read/Write to XO high  
XI pulse width  
40  
10  
10  
50  
10  
15  
tXIR  
tXIS  
XI recovery time  
XI set-up time  
Notes : 16. STD symbol.  
17. ALT symbol.  
18. Timings referenced as in ac test conditions.  
19. Pulse widths less than minimam value are not allowed.  
20. Values guaranteed by design, not currently tested.  
21. Only applies to read data flow-through mode.  
22. All parameters tested only.  
Figure 8. Asynchronous Write and Read Operation.  
11  
Rev. F – June 30, 1999  
M67204E  
Figure 9. Full Flag from Last Write to First Read.  
Figure 10. Empty Flag from Last Read to First Write.  
Figure 11. Retransmit.  
Notes : 23. EF, FF and HF may change status during Retransmit, but flags will be valid at t  
.
RTC  
12  
Rev. F – June 30, 1999  
M67204E  
Figure 12. Empty Flag Timing  
Figure 13. Full Flag Timing  
Figure 14. Half-Full Flag Timing.  
13  
Rev. F – June 30, 1999  
M67204E  
Figure 15. Expansion Out.  
Figure 16. Expansion In.  
Figure 17. Read Data Flow – Through Mode.  
14  
Rev. F – June 30, 1999  
M67204E  
Figure 18. Write Data Flow – Through Mode.  
Ordering Information  
TEMPERATURE RANGE  
PACKAGE  
DP  
DEVICE  
67204EV  
SPEED  
40  
FLOW  
/883  
M
M
M = 5 V version  
40 ns  
50 ns  
blank  
= MHS standards  
/883  
SB/SC  
QM  
= MIL STD 883 Class B or S  
= SCC 9000 level B/C  
= QML–Q  
DP = 28 pin FP 400 mils  
CP = Side brazed 28 pins 300 mils  
0 = Dice form  
SV  
= QML–V  
67204E = 4096 × 9 FIFO  
EV = Very low power Rad Tolerant  
M = Military  
S = Space  
–55° to +125°C  
–55° to +125°C  
* On request only  
The information contained herein is subject to change without notice. No responsibility is assumed by TEMIC for using this publication and/or circuits  
described herein : nor for any possible infringements of patents or other rights of third parties which may result from its use.  
15  
Rev. F – June 30, 1999  

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