SST113TT1 [TEMIC]

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,;
SST113TT1
型号: SST113TT1
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,

文件: 总5页 (文件大小:173K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

SST113TT1-E3

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB, LEAD FREE, TO-236, 3 PIN
VISHAY

SST113TT2

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB, TO-236, 3 PIN
VISHAY

SST113TT2

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,
TEMIC

SST113TT2-E3

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB, LEAD FREE, TO-236, 3 PIN
VISHAY

SST113_SOT-23

N-CHANNEL JFET
MICROSS

SST114

CIT SWITCH
CIT

SST11CP15

4.9-5.8 GHz High-Linearity Power Amplifier
SST

SST11CP15-QUBE

4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, UQFN-12
MICROCHIP

SST11CP15E

4.9-5.9 GHz High-Linearity Power Amplifier
MICROCHIP

SST11CP16

5.1-5.9 GHz High-Linearity Power Amplifier
MICROCHIP

SST11CP16-QXCE

5.1-5.9 GHz High-Linearity Power Amplifier
MICROCHIP

SST11CP16-QXCE-K

5.1-5.9 GHz High-Linearity Power Amplifier
MICROCHIP