TCMT1020_技术文档

Optocouplers

Data Book

1996

Contents

General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Product Information Card . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Optocouplers – Isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Optocouplers – Optical Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Classification Chart for Opto Isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Conventions Used in Presenting Technical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Nomenclature for Semiconductor Devices According to Pro Electron . . . . . . . . . . . . . . . . . . .

Type Designation Code for Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Type Designation Code for Optical Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Symbols and Terminology – Alphabetically . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Example for Using Symbols According to DIN 41 785 and IEC 148 . . . . . . . . . . . . . . . . . . . . . . . . . . .

Data Sheet Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Data – Thermal Resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Optical and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Dimensions (Mechanical Data) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Basic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Description – Assembly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Conversion Tables – Optoelectronic General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Measurement Techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Measurements on Emitter Chip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Measurements on Detector Chip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Static Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Taping of SMD Couplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Missing Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Top Tape Removal Force . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Ordering Designation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Assembly Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Soldering Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Heat Removal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1

8

9

10

12

13

14

17

19

20

22

23

24

26

27

28

31

TELEFUNKEN Semiconductors

06.96

Contents (continued)

Handling Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

33

34

36

37

38

39

40

41

43

44

42

45

46

48

49

50

51

52

53

54

55

56

57

59

60

61

63

68

77

313

419

Protection against ElectrostaticDamage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Mounting Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Cleaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Quality Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

General Quality Flow Chart Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Process Flow Charts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Assembly Flow Chart for Standard Opto-Coupler . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Qualification and Release . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Statistical Methods for Prevention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Average Outgoing Quality (AOQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Early Failure Rate (EFR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Mean Time to Failure (MTTF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Activation Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Safety . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Long-Term Failure Rate (LFR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Optocouplers in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VDE 0884 - Facts and Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Layout Design Rules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TEMIC Optocoupler Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Construction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6–PIN STD Isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Application of Optoelectronic Reflex Sensors TCRT1000, TCRT5000, TCRT9000, CNY70 . . . . . . . .

Drawings of the Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Optoelectronic Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

General Principles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parameters and Practical Use of the Reflex Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Coupling Factor, k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Working Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Resolution, Trip Point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Sensitivity, Dark Current and Crosstalk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Ambient Light . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Application Examples, Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Application Example with Dimensioning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Circuits with Reflex Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Cross Reference List Opto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Opto Isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Opto Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TELEFUNKEN Semiconductors

06.96

Optoisolators

Characteristics

V

CTR

V(

V

@ I and I

t / t @ I

on off C

IO

BRCEO)

CEsat

F

C

I =10 mA

F

IC=1 mA

R =100

L

Package

Type

V

%

V

mA

s

mA

RMS

6 Pin Optoisolators – with Transistor Output

2)

4N25

4N26

4N27

4N28

4N35

4N36

4N37

3750

100(>20)

100(>10)

150(>100)

>32

<0.5

<0.3

50

10

2

4

10

2

2)

4

2

4

0.5

<10

2

2)

Water-proof construction: Suitable for cleaning process with pure water. For your orders, attach “S” to the order-no. (e.g., 4N25(G)VS)

6 Pin Optoisolators – with Darlington Output

2)

4N32

3750

>500

>55

<1

8

2

50

2)

4N33

3750

>500

2)

Water-proof construction: Suitable for cleaning process with pure water. For your orders, attach “S” to the order-no. (e.g., 4N25(G)VS)

Multichannel Optoisolators – with Transistor Output

MCT6

2800

>60

1)

CNY74–2

MCT62

K827P

50–600

>70

<0.3

10

1

6

2

1)

>100

1)

50–600

>70

<0.3

10

1

6

2

CNY74-4

K847P

2800

50–600

1)

>70

<0.3

10

1

6

2

1)

I

F

= 5 mA

Surface Mount Optoisolators – with Transistor Output

MOC205

40–80

63–125

100–200

<40

2500

>90

<0.3

0.3

10

1

6

5

MOC206

MOC207

TCMT1020

TCMT1021

TCMT1022

TCMT1023

TCMT1024

40–80

2500

>90

63–125

100–200

160–320

2

TELEFUNKEN Semiconductors

06.96

Characteristics

V

CTR

V(

V

@

I

F

and I

t / t @ I

on off C

IO

BRCEO)

CEsat

C

I =10 mA

F

IC=1 mA

R =100

L

Package

Type

V

%

V

mA

s

mA

RMS

Surface Mount Optoisolators – with Transistor Output

MOC211

>20

MOC212

>50

MOC213

>100

2500

>90

<0.3

10

1

6

5

1)

MOC215

>20

>50

1)

MOC216

MOC217

>100

>10

1)

TCMT1030

TCMT1031

TCMT1032

TCMT1033

TCMT1034

>20

2500

>90

<0.3

6

>50

1)

>100

>200

1)

I

F

= 1 mA

Metal Can Optoisolators

CNY18III

CNY18IV

CNY18V

K120P

500

800

25–50

40–80

>32

>35

<0.2

<0.3

10

20

1

5

3

60–120

50 (>25)

1

2.5

3C91C

3C92C

1000

800

100 (>40)

>50

<0.3

20

2.5

10

6

2

Characteristics

V

CTR

V(

V

@

I

F

and I

t / t @ I

on off F

IO

BRCEO)

CEsat

C

I =10 mA

F

IC=1 mA

R =100

L

Package

Type

V

%

V

mA

s

mA

DC

Optoisolators – for Intrinsic Safety Requirements, with Transistor Output

CNY21Exi

Ex-90.C.2106U

10000

80(>50)

>32

<0.3

10

1

5

CNY65Exi

Ex-81/2158U

11600

63–125

>32

<0.3

10

1

5

TELEFUNKEN Semiconductors

3

06.96

Characteristics

V

CTR

V(

V

@

I

F

and I

t / t @ I

on off F

IO

BRCEO)

CEsat

C

I =10 mA

F

IC=1 mA

R =100

L

Package

Type

V

%

V

mA

s

mA

DC

VDE 0884 Approved Optoisolators

Standard Optoisolators – with Transistor Output

1)

4N25(G)V

6000

100(>20)

>32

<0.5

<0.3

50

10

2

4

10

2

1)

4N35(G)V

6000

150(>100)

>70

0.5

10

1)

Water-proof construction: Suitable for cleaning process with pure water. For your orders, attach “S” to the order-no. (e.g., 4N25(G)VS)

No Base Connection

TCDT1110(G)

6000

150(>100)

>70

<0.3

10

0.5

10

2

Order “G” devices e.g., TCDT1110(G) with wide spaced 0.4 lead form, for 8 mm PC board spacing safety requirements!

– With CTR Ranking

1)

CQY80N(G)

CNY17(G)-1

CNY17(G)-2

CNY17(G)-3

6000

90(>50)

40–80

>32

<0.3

10

1

9

5

1)

63–125

100–200

1)

Water-proof construction: Suitable for cleaning process with pure water. For your orders, attach “S” to the order-no., e.g., 4N25(G)VS

No Base Connection

TCDT1100(G)

TCDT1101(G)

TCDT1102(G)

TCDT1103(G)

6000

90(>50)

40–80

>32

<0.3

10

1

9

5

63–125

100–200

– With CTR Ranking and High Output Voltage

1)

CNY75(G)A

6000

63–125

100–200

160–320

>90

<0.3

10

1

4

6

7

10

1)

CNY75(G)B

1)

CNY75(G)C

1)

Water-proof construction: Suitable for cleaning process with pure water. For your orders, attach “S” to the order-no. (e.g., 4N25(G)VS)

4

TELEFUNKEN Semiconductors

06.96

Characteristics

V

CTR

V(

V

@

I

F

and I

t / t @ I

on off F

IO

BRCEO)

CEsat

C

I =10 mA

F

IC=1 mA

R =100

L

Package

Type

V

%

V

mA

s

mA

DC

No Base Connection

TCDT1120(G)

TCDT1122(G)

TCDT1123(G)

TCDT1124(G)

6000

63

>90

<0.3

10

1

4

10

63–125

100–200

160–320

5

6

7

Order “G” devices, e.g., CNY75GA with wide spaced 0.4” lead form, for 8 mm PC board spacing safety requirements!

Optoisolators – for High Isolation Voltages

CNY21N

8000

60(>25)

50–300

63–125

100–200

50–300

63–125

100–200

50–300

>32

<0.3

10

1

5

CNY64

CNY64A

CNY64B

CNY65

8000

CNY65A

CNY65B

CNY66

8000

>32

<0.3

10

1

5

Characteristics

V

I

FT

V

dv/dt

IO

DRM

TRMS

TM

V

mA

V

V/ s

Package

Type

IOTM

Optoisolators – with Triac Driver Output

K3010P(G)

<15

<10

<5

250

100

<3

10

K3011P(G)

K3012P(G)

K3020P(G)

K3021P(G)

K3022P(G)

K3023P(G)

6000

<30

<15

<10

<5

500

Order “G” devices e.g., K3011PG with wide spaced 0.4 ” lead form, for 8 mm PC board spacing safety requirements!

1)

VDE 0884 certificate is applied

TELEFUNKEN Semiconductors

5

06.96

Optical Sensors

Characteristics

V

(BR)CEO

I

CTR @ I

V

t @ I and I

C

F

CEsa

F

C

@ 1 mA

Package

Type

mA

%

mA

V

mA

Reflective Optical Sensors

CNY70

>0.3

>1.5

>3.5

20

10

>32

<0.3

<0.4

20

10

0.1

TCRT1000

TCRT1010

TCRT5000

>0.35

Transmissive Optical Sensors

– with Aperture – with Transistor Output

TCST1103

TCST2103

TCST1202

TCST2202

TCST1300

TCST2300

4(>2)

20(>10)

10(>5)

20

70

3.2

0.6

0.4

0.2

1

2(>1)

0.5

0.25

2(>1)

10(>5)

0.5(>0.25)

2.5(>1.25)

*)TCST2103 /TCST2202 /TCST2300

– without Aperture – with Transistor Output

TCST1000

0.5(>0.25)

2.5(>1.25)

20

70

3.1

0.8

–

TCST2000

0.5(>0.25)

2.5(>1.25)

Miniature Transmissive Optical Sensors – with Transistor Output

TCST1230

TCST1030

TCST5123

1(>0.5)

2.5(>1.2)

5(>2.4)

5(>2.5)

25(>12)

20

10

20

70

3

0.8

–

3

2.8

Miniature Optical Encoder – with Transistor Output (Dual Channel)

TCVT1300

0.6(>0.4)

2(>1.3)

30

70

1.5

0.2

6

TELEFUNKEN Semiconductors

06.96

Characteristics

V

(BR)CEO

I

CTR @ I

Gap

mm

Resolution

mm

Aperture

mm

C

F

@ 1 mA

Package

Type

mA

%

mA

V

Matched Pairs (Emitter and Detector)

TCZT8012

2(>1)

10(>5)

20

70

<0.4

20

0.1

TCZT8020

0.5(>0.25)

2.5(>1.25)

0.025

Characteristics

I

t

/ t

t / t

V

CC

Gap

mm

Resolution

mm

Aperture

mm

FT

on off

r

f

Package

Type

mA

s

V

1)

Transmissive Optical Sensors – with Schmitt Trigger Logic

TCSS1100

<10

2

0.03

5

3.2

0.6

1

TCSS2100

<10

2

0.03

5

3.2

1)

Matched Pairs (Emitter and Detector) – with Schmitt Trigger Logic

TCZS8000

<20

2

0.03

5

–

TCZS8100

<10

2

0.03

4.5–16

–

1) Inverted, open collector output

Optical Sensors with Wires and Connectors

Characteristics

I

V

I

V

CC

Gap

mm

Resolution

mm

Aperture

mm

FT

OL

S

Package

Type

mA

V

mA

V

Transmissive Optical Sensors – with Schmitt Trigger Logic Output

TCYS5201

–

0.35

30

5

0.4

0.5

TCYS6201

–

0.35

30

5

0.4

TELEFUNKEN Semiconductors

7

06.96

Product Information Card

Optocouplers – Isolators

Market Segment,

Recommended TEMIC

Devices

Description

Applications

Switchmode power supply

CQY80N/ TCDT1101-03

CNY75A-C/ TCDT1121-23

CNY64 or CNY65 for larger

creepage distances

On-off external control circuit, feedback circuit,

overvoltage detection circuit.

Main features: Insulation input-to-output and small machines, printers,

transformers are replaced.

Key features: Isolation test voltage

Power supply in monitors,

computers, copy

faxmachines, TV, VCR,

medical equipment,

(std is 3.750 KV RMS) and CTR (ratio output

current/ input current). Different models request

different CTR rank. Coupler with no base

connection is very popular because it prevents

interferences.

washing machines etc.

Most usable parts: CQY80N/ TCDT1100 and

CNY75/ TCDT1120 all couplers also available in

“G” version. “G” stands for extended creepage

distance of 0.4 lead to lead.

Control equipment

please recommend:

4N35-4N37

Isolation of dc input circuit, isolation of dc output

circuit, signal serve motor control circuit.

Isolation for signal transfer system for automatic

door control, circuit lamp and relay drive circuit.

Programmable controller,

numerical control, PPC

tele-facsimile, automatic

door control, others

Office automation equipment Motor driving power-supply circuit (primary-

PPC tele-facsmile

equipment, printer

please recommend:

CNY64, CNY65

secondary circuit isolation), high-voltage control

circuit of static electric printer, printer driver

circuit interface between input and output circuit.

Vending machine

please recommend:

4N35-4N37

Interface between input and output circuit type

selection circuit.

Household appliance

please recommend:

CNY64, CNY65

Audio signal isolation, video signal interface,

power-supply circuit, motor control circuit.

Triac driver interface between input and output

Base amplification circuit of inverter control

over-current detection circuit.

TV, electrical sewing

machine, microwave

oven, warm air heating

equipment, air conditioner

K3010P-K3023P

Audio equipment

Power supply circuit (primary-secondary circuit

Compact disc player

see switch-mode power supply isolation)

Telecommunication

please recommend:

K3010P-K3023P,

4N35-4N37, 4N32

Isolation for signal transfer system, pulse-dial

circuit, ring-detector circuit, loop monitor circuit

Push-button telephone

system

8

TELEFUNKEN Semiconductors

06.96

Optocouplers – Optical Sensors

Market Segment,

Application

Description

Usability

TV, audio

Detection of rotation speed, position pick-up head,

home position tape counter, tape-end detection

VCR, VDP, CD player,

tape deck

please recommend:

TCRT1000, 5000,

TCST5123, 1030, 1230

TCVT1300

Home electric

please recommend:

TCRT5000, TCST1103,

TCST1300, IR single parts

Scattering reflection light, detection of washing

water contaminiation, detection of salt level, me-

chanical position detection, movement of needle,

cloth feeder

Smoke detector. washing

machines, dish-washer,

health equipment, sewing

machines

Automotive

Engine speed detection, point-position detection,

steering angle detection, detection of door lock

Tachometer,

speedometer, steering

wheel, door

please recommend:

optical pairs: TCZT8020,

TCZT8012, TCZS8100,

TCRT1000

Control and measure

please recommend:

TCVT1300, TCRT1000

Speed rotation, motor position, distance detection,

mechanical position detection, object sensor

Rotary encoder

measuring, devices,

robots, electricity meters

Office automation

please recommend:

TCST1030, 1230,

TCST1300, TCRT1000

TCRT5000

Detection of paper, paper position, home position,

print timing, detection of paper feeding, detection

of paper exhaustion index, write-protect detection,

zero tracking detection, detection of scan timing

Copier, printer, typewriter,

facsimile, FDD, tape

drives, handy, scanner

Others

TCST1103,

TCRT5000, TCST1300

Detection of coins, detection of paper money,

detection of prints, detection of weight, object

sensor/ on/ off position, liquid-level detection

Slot machine ticket/

vending machines,

validator, film cutter,

electronic scales,

watertab, liquid, container

TELEFUNKEN Semiconductors

9

06.96

Classification Chart for Opto Isolators

General purpose

4N27/28

CTR>10%

Standard

4N25/26

Transistor output

CTR>20%

4N35–37

CTR>100%

4N-Series

Base n.c.

TCDT1110

CTR>50%

Transistor output

High CTR

4N32/33

Darlington output

CTR>500%

American pin connection

CNY74–2

CTR>50–600%

American pin connection

2 Channels

MCT6/62

Transistor output

CTR>100%

K827P

Japanese pin connection

American pin connection

Multichannel

CTR>50–600%

CNY74–4

CTR>50–600%

4 Channels

Transistor output

K847P

Japanese pin connection

CTR>50–600%

96 11941

10

TELEFUNKEN Semiconductors

06.96

Classification Chart for Opto Isolators

VDE-tested devices for e.g., switching power supply

CNY64/65/66

CTR>50%

Thickness of

isolation > 2mm

Transistor output

CNY21N

use for:

CTR>25%

IEC 335 / VDE 700;

safety standard

base n.c.

TCDT110.(G)

CTR>50%

TCDT1110(G)

CTR>100%

TCDT112.(G)

CTR>63%

Creepage distance

8mm

4N25(G)V

CTR>20%

Transistor output

4N35(G)V

CTR>100%

CQY80N(G)

CTR>50%

CNY17(G)

CTR>40%

Thickness of

isolation>0.75mm

CNY75(G)

CTR>63%

use for:

IEC 435 / VDE 0805

IEC 380 / VDE 0806

K3010P(G)

V

=250V, I

15mA

K3020P(G)

=500V, I 30mA

Triac driver

DRM

FT

DRM

FT

CNY65Exi

Creepage distance

> 8mm

Thickness of

isolation > 3.3mm

CTR 63–125%

Transistor output

CNY21Exi

CTR>50%

PTB-tested device use for:

intrinsic safety

CNY18

CTR>25%

K120P

Hermetically-sealed

package JEDEC TO72

Different pin

connections

CTR>25%

Transistor output

3C91C

CTR>40%

3C92C

CTR>40%

96 11940

TELEFUNKEN Semiconductors

11

06.96

Conventions Used in Presenting Technical Data

Nomenclature for Semiconductor Devices According to Pro Electron

The type number of semiconductor devices consists of two letters followed by a serial number

C

N

Y75

Material

Function

Serial number

The first letter gives information about the material used

for the active part of the devices.

N

P

PHOTO COUPLER

DIODE: Radiation sensitive

A

B

C

R

GERMANIUM

(Materials with a band gap of 0.6 – 1.0 eV)

Q

R

S

DIODE: Radiation generating

THYRlSTOR: Low power

1)

SILICON

(Materials with a band gap of 1.0 – 1.3 eV)

TRANSISTOR: Low power, switching

THYRISTOR: Power

GALLIUM-ARSENIDE

(Materials with a band gap > 1.3 eV)

T

U

X

Y

Z

1)

TRANSISTOR: Power, switching

DIODE: Multiplier, e.g., varactor, step recovery

DIODE: Rectifying, booster

COMPOUND MATERIALS

(For instance Cadmium-Sulphide)

The second letter indicates the circuit function:

DIODE: Voltage reference or voltage regulator,

transient suppressor diode

A

B

C

D

E

DIODE: Detection, switching, mixer

DIODE: Variable capacitance

TRANSISTOR: Low power, audio frequency

TRANSISTOR: Power, audio frequency

DIODE: Tunnel

The serial number consists of:

Three figures, running from 100 to 999, for devices

primarily intended for consumer equipment.

F

TRANSISTOR: Low power, high frequency

DIODE: Oscillator, miscellaneous

DIODE: Magnetic sensitive

One letter (Z, Y, X, etc.) and two figures running from

10 to 99, for devices primarily intended for profes-

sional equipment.

G

H

K

HALL EFFECT DEVICE:

In an open magnetic circuit.

A version letter can be used to indicate a deviation of a

single characteristic, either electrically or mechanically.

L

TRANSISTOR: Power, high frequency

The letter never has a fixed meaning, the only exception

being the letter R, which indicates reversed voltage, i.e.,

collector-to-case.

M

HALL EFFECT DEVICE:

In a closed magnetic circuit

1)

The material mentioned are examples

12

TELEFUNKEN Semiconductors

06.96

Type Designation Code for Optocouplers

T

C

TEMIC

TELEFUNKEN

Semiconductors

Number of

Case varieties

Main type

coupler systems

1 = 1 system

2 = 2 systems

3 = 3 systems

4 = 4 systems

C = Metal can

D = Dual inline

G = Casting products

H = Metal can parts

mounted in plastic

case

M= SMD package

Coupler

Selection

type

Output

IF “T” on 4. position

Pin connection – please

refer to data sheet

D = Darlington

E = Split-Darlington

H = High speed

L = Linear IC

S = Schmitt Trigger

T = Transistor

V = Triac

Type Designation Code for Optical Sensors

T

C

TEMIC

TELEFUNKEN

Semiconductors

Function/ Case varieties

N = SMD reflective sensor

O = Reflective sensor with

wire terminals

R = Reflective sensor

S = Transmission sensor

(polycarbonat)

U = SMD transmissive

sensor

V = 2 channel transmissive

sensor

Package varieties

1 = without mounting

flange

2 = with mounting

flange

3 = with mounting

flange on emitter

side

4 = with mounting

flange on detector

side

Main type

Appendix

U = Unmounted

X = Transmission sensor

with wire terminals

Y = Transmission sensor

with connector

5 = special package

without flange

6 = special package

with flange

Selection

type

Z = Emitter and detector

matched pairs without

package

7 = TO92 Mini

8 = single part

9 = special part

Output

Aperture

Coupler

D = Darlington

L = Linear IC

S = Schmitt Trigger

T = Transistor

0 = without

1 = 1 mm

2 = 0.5 mm

3 = 0.25 mm

TELEFUNKEN Semiconductors

13

06.96

Symbols and Terminology – Alphabetically

A

v/ t crq

Critical rate of rise of commutating voltage (I ≥ I

Anode, anode terminal

)

FT

F

Highest value of “rate of rise of commutating voltage”. It

will not switch-on the device again until after the voltage

has decreased to zero and the trigger current is switched

A

Radiant sensitive area

That area which is radiant-sensitive for a specified range

to zero (I ≤ I ).

f

FT

a

E

Distance between the emitter (source) and the detector

Emitter, emitter terminal

AQL

f

Acceptable Quality Level,

see “Qualification and Monitoring”

Frequency

Unit: Hz (Hertz)

B

f

g

Base, base terminal

Cut-off frequency

C

The frequency at which the modules of the small signal

Capacitance

1

2

current transfer ratio has decreased to

frequency value.

of its lowest

C

Cathode, cathode terminal

G

B

C

Gain bandwidth product

Collector, collector terminal

Gain bandwidth product is defined as the product of M

times the frequency of measurement, when the diode is

biased for maximum of obtainable gain.

°C

Celsius

Unit of the centigrade scale; can also be used (besides K)

to express temperature changes

Symbols: T,

h

FE

DC current gain

T

I

B

T(°C) = T(K)–273

Base current

C

CEO

I

C

Collector emitter capacitance

Capacitance between the collector and the emitter with

open base

Measurement is made by applying reverse voltage

between collector and emitter terminals.

Collector current

I

CB

Collector base current

I

CEO

Collector dark current, with open base

At radiant sensitive devices with open base and without

illumination/radiation (E = 0)

C

j

Junction capacitance

Capacitance due to a PN-junction of a diode

It decreases with increasing reverse voltage.

I

CM

Repetitive peak collector current

C

k

I

CX

Coupling capacitance

Capacitance between the emitter and the detector of an

opto isolator

Cross talk current

For reflex-coupled isolators, collector emitter cut-off

current with the IR emitter activated, but without

reflecting medium

CTR

Current Transfer Ratio

Ratio between output and input current

I

DRM

Repetitive peak off-state current

The maximum leakage current that may occur under the

I_C

I_F

CTR

100

%

conditions of V

DRM

d

I

F

Distance

Forward current continuous

The current flowing through the diode in direction of

lower resistance

v/ t cr

Critical rate of rise of off-state voltage (I = 0)

F

Highest value of “rate of rise of off-state voltage” which

I

FAV

will cause no switching from the off-state to the on-state. Average (mean) forward current

14

TELEFUNKEN Semiconductors

06.96

I

T

FM

Peak forward current

Temperature

0 K = –273.16°C

Unit: K (Kelvin), °C (Celsius)

I

FSM

Surge forward current

I

t

FT

Threshold forward current

Time

The minimum current required to switch from the off-

state to the on-state

T

amb

Ambient temperature

I

It self-heating is significant:

H

The minimum current required to maintain the thyristor Temperature of the surrounding air below the device,

in the on-state

under conditions of thermal equilibrium.

If self-heating is insignificant:

Air temperature in the immediate surroundings of the de-

vice

I

o

DC output current

I

OH

T

amb

High level output current

Ambient temperature range

As an absolute maximum rating:

The maximum permissible ambient temperature range.

I

R

Reverse current, leakage current

Current which flows when reverse bias is applied to a

semiconductor junction

T

case

Case temperature

The temperature measured at a specified point on the case

of a semiconductor device

Unless otherwise stated, this temperature is given as the

temperature of the mounting base for devices with metal

can

I

ro

Reverse dark current

Reverse dark current which flows through a photoelectric

device without radiation/ illumination

I

Srel

Relative supply current

t

d

I

T

Delay time

On-state current

The permissible output current under stated conditions

t

f

Fall time, see figure 17

K

Kelvin

T

j

Junction temperature

The unit of absolute temperature T (also called the Kelvin

temperature); also used for temperature changes

(formerly °K)

It is the spatial mean value of temperature which the junc-

tion has acquired during operation. In the case of

phototransistors, it is mainly the temperature of collector

junction because its inherent temperature is maximum.

P

tot

Total power dissipation

TC

P

v

Temperature coefficient

Power dissipation, general

The ratio of the relative change of an electrical quantity

to the change in temperature (∆T) which causes it, under

otherwise constant operating conditions.

R

IO

Input/ output isolation resistor

R

L

t

off

Load resistance

Turn-off time, see figure 17

R

thJA

t

on

Thermal resistance, junction ambient

Turn-on time, see figure 17

R

thJC

t

p

Thermal resistance, junction case

Pulse duration, see figure 17

S

t

r

Displacement

Rise time, see figure 17

T

t

s

Period (duration)

Storage time

TELEFUNKEN Semiconductors

15

06.96

T

sd

V

DRM

Soldering temperature

Repetitive peak off-state voltage

Maximum allowable temperature for soldering with The maximum allowable instantaneous value of repeti-

specified distance from case and its duration (see table 2) tive off-state voltage that may be applied across the triac

output

T

stg

Storage temperature range

The temperature range at which the device may be stored

or transported without any applied voltage

V

EBO

Emitter base voltage, open collector

V

ECO

V

BEO

Emitter collector voltage, open base

Base-emitter voltage, open collector

V

(BR)

V

F

Breakdown voltage

The voltage across the diode terminals which results from

the flow of current in the forward direction

Reverse voltage at which a small increase in voltage

results in a sharp rise of reverse current

It is given in technical data sheets for a specified current.

V

IO

The voltage between the input terminals and the output

terminals

V

(BR)CEO

Collector emitter breakdown voltage, open base

V

(BR)EBO

V

IORM

Emitter base breakdown voltage, open collector

The maximum recurring peak (repetitive) voltage value

of the optocoupler, characterizing the long-term

withstand capability against transient overvoltages

V

(BR)ECO

Emitter collector breakdown voltage, open base

V

CBO

V

IOTM

Collector-base voltage, open emitter

The impulse voltage value of the optocoupler, character-

izing the long-term withstand capability against transient

overvoltage

Generally, reverse biasing is the voltage applied to any-

one of two terminals of a transistor in such a way that one

of the junction operates in reverse direction, whereas the

third terminal (second junction) is specified separately.

V

IOWM

V

CE

The maximum rms. voltage value of the optocoupler,

characterizing the long-term withstand capability of its

insulation

Collector-emitter voltage

V

CEO

V

R

Collector-emitter voltage, open base (I = 0)

B

Reverse voltage

Voltage drop which results from the flow of reverse

current

V

CEsat

Collector emitter saturation voltage

Saturation voltage is the dc voltage between collector and

V

s

emitter for specified (saturation) conditions i.e., I and I

C

F,

Supply voltage

whereas the operating point is within the saturation re-

gion.

V

TM

On-state voltage

The maximum voltage when a thyristor is in the on-state

Saturation region

I

C

V

TMrel

Relative on-state voltage

±

Angle of half sensitivity

I given

F

The plane angles through which a detector, illuminated by

a point source, can be rotated in both directions away

from the optical axis, before the electrical output of the

device falls to half the maximum value

±

given I

C

Angle of half sensitivity

The plane angles through which an emitter can be rotated

in both directions away from the optical axis, before the

electrical output of a linear detector facing the emitter

falls to half the maximum value

V

CE

96 11694

V

CESat

Figure 1.

16

TELEFUNKEN Semiconductors

06.96

Example for Using Symbols According to DIN 41 785 and IEC 148

a)

Transistor

I

dc value, no signal

Average total value

Maximum total value

RMS varying component

Maximum varying

component value

C

CAV

;I

CM

C

I

cm

AC value

;I

C

c

I

CM

i

C

i

C

Instantaneous total value

Instantaneous varying

component value

I

cav

i

c

Collector

current

I

CAV

The following relationships are valid:

= I + I

I

CM

I

C

CM

CAV

cm

i

C

i

C

= I + i

CAV c

without signal

with signal

Figure 2.

t

93 7795

b)

Diode

V

F

V

FSM

V

Forward voltage

Reverse voltage

Surge forward voltage

(non-repetitive)

Surge reverse voltage

(non-repetitive)

Repetitive peak

forward voltage

Repetitive peak

reverse voltage

Crest working

F

R

V

FRM

FSM

RSM

FRM

RRM

V

FWM

V

0

t

FWM

RWM

V

RWM

RRM

forward voltage

Crest working

V

reverse voltage

V

RSM

V

R

93 7796

Figure 3.

TELEFUNKEN Semiconductors

17

06.96

c)

Triac

Quadrant I

+I

T

Forward Breakover

Voltage / Current

+I

H

+V

T

I

Repetitive peak

DRM

off-state current

Threshold forward current

Holding current

On-state current

Repetitive peak

+I

DRM

I

V

FT

–V

DRM

H

T

+V

DRM

+V

DRM

–I

DRM

off-state voltage

On-state voltage

V

TM

–V

T

–I

H

Reverse Breakover

Voltage / Current

T

–I

Quadrant III

96 11881

Figure 4.

d)

Designation and symbols of optoelectronic devices are given so far as possible

according to DIN 44020 sheet 1 and IEC publication 50 (45).

18

TELEFUNKEN Semiconductors

06.96

Thermal Data – Thermal Resistances

Data Sheet Structure

Some thermal data (e.g., junction temperature, storage

temperature range, total power dissipation) are given

under the heading “Absolute maximum ratings”; (This is

because they impose a limit on the application range of

the device).

Data sheet information is generally presented in the

following sequence:

Description

The thermal resistance junction ambient (R

that which would be measured without artificial cooling,

i.e., under worst case conditions.

) quoted is

Absolute maximum ratings

Thermal data – thermal resistances

Optical and electrical characteristics

Diagrams

thJA

Temperature coefficients, on the other hand, are listed to-

gether with the associated parameters under “Optical and

electrical characteristics”.

Optical and Electrical Characteristics

Dimensions (mechanical data)

Here, the most important operational, optical and electri-

cal characteristics (minimum, typical and maximum

values) are listed. The associated test conditions,

supplemented with curves and an AQL-value quoted for

particularly important parameters (see “Qualification and

Monitoring”) are also given.

Description

The following information is provided: Type number,

semiconductor materials used, sequence of zones,

technology used, device type and, if necessary,

construction.

Diagrams

Also, short-form information on special features and the

typical applications is given.

Besides the static (dc) and dynamic (ac) characteristics,

a family of curves is given for specified operating

conditions. These curves show the typical interpendence

of individual characteristics.

Absolute Maximum Ratings

Dimensions (Mechanical Data)

These define maximum permissible operational and envi-

ronmental conditions. If any one of these conditions is

exceeded, it could result in the destruction of the device.

This list contains important dimensions and the sequence

of connection, supplemented by a circuit diagram. Case

outline drawings carry DIN-, JEDEC or commercial des-

ignations. Information on the angle of sensitivity or

intensity and weight completes the list of mechanical

data.

Unless otherwise specified, an ambient temperature of

25 ± 3 °C is assumed for all absolute maximum ratings.

Most absolute ratings are static characteristics; if

measured by a pulse method, the associated measurement

conditions are stated. Maximum ratings are absolute (i.e.,

not interdependent).

Please Note:

If the dimensional information does not include any

tolerances, the following applies:

Lead length and mounting hole dimensions are minimum

values. Radiant sensitive (or emitting area respectively)

are typical values, all other dimensions are maximum.

Any equipment incorporating semiconductor devices

must be designed so that even under the most unfavorable

operating conditions the specified maximum ratings of

the devices used are never exceeded. These ratings could

be exceeded because of changes in

Any device accessories must be ordered separately,

quoting the order number.

Additional Information

Preliminary specifications

Supply voltage, the properties of other components

used in the equipment

This heading indicates that some information on

preleminary specifications may be subject to slight

changes.

Control settings

Load conditions

Drive level

Not for new developments

This heading indicates that the device concerned should

Environmental conditions and the properties of the not be used in equipment under development. It is,

devices themselves (i.e., ageing).

however, available for present production.

TELEFUNKEN Semiconductors

19

06.96

270

+5 V

M

0.1 F

VAC

TTL

Galvanical separation

96 11706

Figure 5. Basic application of an optocoupler

General Description

Basic Function

Low coupling capacitance

No uncontrolled function by field strength influences

In an electrical circuit, an optocoupler ensures total elec-

tric isolation, including potential isolation, as in the case

of a transformer, for instance.

These factors are essentially dependent on the design, the

materials used and the corresponding chips used for the

emitter/receiver.

In practice, this means that the control circuit is located

on one side of the optocoupler, i.e., the emitter side, while

the load circuit is located on the other side, i.e., the

receiver side. Both circuits are electrically isolated by the

optocoupler (figure 5). Signals from the control circuit

are transmitted optically to the load circuit, and are there-

fore free of retroactive effects. In most cases, this optical

transmission is realized with light beams whose wave-

lengths span the red to infrared range, depending on the

requirements applicable to the optocoupler. The band-

width of the signal to be transmitted ranges from a dc

voltage signal to frequencies in the MHz band. An opto-

coupler is comparable to a transformer or relay. Besides

having smaller dimensions in most cases, the advantages

of optocouplers compared to relays are the following: it

ensures considerably shorter switching times, no contact

bounce, no interference caused by arcs, no mechanical

wear and the possibility of adapting a signal, already in

the coupler, to the following stage in the circuitry. Thanks

to all these advantages, optocouplers are outstandingly

suitable for circuits used in microelectronics and also in

data processing and telecommunication systems. Opto-

couplers are used to an increasing extent as safety tested

components, e. g., in switchmode power supplies.

TEMIC has succeeded in achieving a design with opti-

mized insulation behavior and good transfer

characteristics.

TEMIC offers various mechanical designs. The 6-lead

DIP package optocoupler is used most widely throughout

the world.

Since this design deviates fundamentally from

manufacturers’ designs, it is necessary to explain its

characteristics.

In TEMIC’s 6-lead DIP couplers, the emitter and receiver

chips are placed side by side. A semi-ellipsoid with best

reflection capabilities is fitted over both chips. The entire

system is then cast in a plastic material impermeable to

the infrared range and of high dielectric strength. The

whole system is enveloped in a light-proof plastic

compound to ensure that no external influences such as

light or dust, etc. will disturb the coupler, see figure 6.

The design offers several advantages in comparison to

conventional coupler designs.

Design

The mechanical clearance between the emitter and

receiver is 0.75 mm and is thus mechanically stable even

under thermal overloads, i.e., the possibility of a short

circuit caused by material deformation is excluded. This

is important for optocouplers which have to fulfill strict

safety requirements (VDE/UL specifications), see

VDE0884 Facts and Information.

An optocoupler has to fulfill 5 essential requirements:

Good insulation behavior

High current transfer ratio (CTR)

Low degradation

20

TELEFUNKEN Semiconductors

06.96

Thanks to their large clearance these couplers have a very If inversions occur on the surface, the phototransistor

low coupling capacity of 0.2 pF. Couplers with conven- becomes forward-biased, causing an inadmissible

tional designs, i.e., where the emitter and receiver are residual collector-emitter current. As a result, controlled

fitted ”face-to-face” (figure 7), have higher coupling functioning of the coupler is no longer guaranteed

capacitance values by a factor of 1.3 - 2. Attention must (figure 8). This effect occurs mainly whenever the

be paid to the coupling capacitance in digital circuits in receiver is within the field strength potential. The

which steep pulse edges are produced which superimpose manufacturer should create suitable protective measures

themselves on the control signal. With a low coupling in this case. Using TEMIC’s optocouplers, such protec-

capacitance, the transmission capabilities of these tive measures are not necessary thanks to their perfect

interference spikes are effectively suppressed between design.

the input and output because a coupler should only

The degradation of an optocoupler, i.e., impairment of its

transmit the effective signal. This capability of

CTR over a finite period, depends on two factors. On the

suppressing dynamic interferences is commonly known

one hand, it depends on the emitter element due to its

as “common-mode rejection”.

decreasing radiation power while, on the other hand, it

depends on ageing or opaqueness of the synthetic resin

which must transmit the radiation from the emitter to the

receiver. A decrease in the radiation power can be

primarily ascribed to thermal stress caused by an external,

high ambient temperature and/or high a forward current.

In practice, optocouplers are operated with forward

current of 1 to 30 mA through the emitting diode. In this

range, degradation at an average temperature of 40°C is

less than 5% after 1000 h. If we compare this value with

the service life requirements applicable to transistors for

high grade systems (such as those used in telecom-

munication system standards), the optocoupler takes a

good position with such degradation values. The

Deutsche Bundespost, for example, permits a B-drift of

no more than 20% for transistors with a maximum testing

time of 2000 h. In general, an optocoupler’s life time is

a period of 150.000 h, i.e, the CTR should not have

dropped below 50% of its value at 0 hours during this time

(see figure 9).

Figure 6. Inline emitter and transmitter chip design

(e.g., CQY80N)

Figure 7. Face-to-face design

Due to the special design of these couplers, the receiver

surface is outside the area of the direct field strength.

Field strength is produced when there is a voltage

potential between the coupler’s input and output. It

causes the migration of positive ions to the transistor’s

surface. Positive ions perform on the base in the same way

as a gate voltage applied to an n-channel FET transistor

(see figure 8).

Figure 8. Functions of parasitic field effect transistor as a result

of failure (latch-up) in the phototransistor of couplers

TELEFUNKEN Semiconductors

21

06.96

Technical Description – Assembly

Emitter

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.5

Emitters are manufactured using the most modern Liquid

Phase Epitaxy (LPE) process. By using this technology,

the number of undesirable flaws in the crystal is reduced.

This results in a higher quantum efficiency and thus

higher radiation power. Distortions in the crystal are

prevented by using mesa technology which leads to lower

degradation. A further advantage of the mesa technology

is that each individual chip can be tested optically and

electrically even on the wafer.

Operating

conditions:

Test conditions:

=5V

I =10mA

F

V

=5V

CE

V

CE

I =30mA

F

T =25°C

amb

Detector

TEMIC detectors have been developed so that they match

perfectly to the emitter. They have low capacitance

values, high photosensitivity and are designed for an ex-

tremely low saturation voltage.

0

1500 3000 4500 6000 7500 9000

t – Time ( h )

96 12107

Figure 9. Degradation under typical operating conditions with

reference to the CQY80N

Silicon nitride passivation protects the surface against

possible impurities.

Assembly

The components are fitted onto lead frames by fully auto-

matic equipment using conductive epoxy adhesive.

Contacts are established automatically with digital

pattern recognition using the well-proven thermosonic

technique. In addition to optical and mechanical checks,

all couplers are measured at a temperature of 100°C.

Conversion Tables – Optoelectronic General

Table 1. Corresponding radiometric and photometric definitions, symbols and units (DIN 5031, Part 1, 3)

Radiometric Units

Symbol

Photometric Units

Symbol

Note

Unit

Radiant flux,

Watt, W Luminous flux

lumen, lm Power

e

v

Radiant power

Radiant exitance,

Exitance

2

M

W/m

W/sr

Luminous emittance

M

lm/m

Output power per

unit area

e

v

(Radiant) intensity

I

(Luminous) intensity

I

Candela, Output power per

c

v

cd, lm/sr unit solid angle

2

Radiant sterance,

Radiance

L

E

Luminance

(Brightness sterance)

L

E

cd/m

Output power per

unit solid angle

and emitting areas

Input power per

unit area

Power time

Radiant energy or

luminous energy

per unit area

e

v

W

sr^*m²

2

Radiant incidance,

Irradiance

Radiant energy

Irradiation

W/m

Illuminance

lm/m

e

v

Lux, lx

lm s

Q

H

Ws

Ws/m

Luminous energy

Illumination

Q

H

e

v

2

lm s/m

e

v

22

TELEFUNKEN Semiconductors

06.96

V

= 5V

S

Measurement Techniques

Introduction

I = 50mA

100mA

The characteristics given in the optocoupler‘s data sheets

are verified either by 100% production tests followed by

statistic evaluation or by sample tests on typical

specimens. Possible tests are the following:

constant

V

F

Measurements on emitter chip

Measurements on detector chip

Static measurements on optocoupler

V

R > 10k

j

94 8205

Measurement of switching characteristics, cut-off

frequency and capacitance

Figure 10.

Thermal measurements

V

= 80V

S

( > V

)

R max

The basic circuits used for the most important measure-

ments are shown in the following sections, although these

circuits may be modified slightly to cater for special

measurement requirements.

I = 10 A

constant

Measurements on Emitter Chip

V

R

Forward- and Reverse Voltage

Measurements

V

R > 10M

j

The forward voltage, V is measured either on a curve

F,

tracer or statically using the circuit shown in figure 10.

A specified forward current (from a constant current

source) is passed through the device and the voltage

developed across it is measured.

94 8206

Figure 11.

To measure the reverse voltage, V , a 100 A reverse

V

( > V

= 100V

R

S

)

current from a constant current source is applied to the

diode (figure 11) and the voltage developed across it is

measured on a voltmeter of extremely high input

impedance (≥10 M ).

CEO

I

= 1mA

C

constant

Measurements on Detector Chip

E < 100lx

V

V_CEOand I_CEOMeasurements

CEO

V

The collector-emitter voltage, V , is measured either

CEO

on a transistor curve tracer or statically using the circuit

shown in figure 12.

R

i

1M

The collector dark current, I , must be measured in

CEO

96 12367

complete darkness (figure 13). Even ordinary daylight

illumination might cause wrong measurement results.

Figure 12.

TELEFUNKEN Semiconductors

23

06.96

V

= 20V

V

= 5V

V

= 5V

S

I

= 5mA

10mA

F

I

CEO

I

C

E = 0

constant

10k

mV

R = 1M

i

1

mV

R = 10k

j

96 11695

96 11696

Figure 14.

Figure 13.

V

= 5V

V = 5V

S

Static Measurements

I

F

= 10mA

constant

I

C

= 1mA

constant

To measure the collector current, I (figure 14), a

C

specified forward current, I , is applied to the lR diode.

F

Voltage drop is then measured across a low-emitter

resistance.

V

CEsat

V

In the case of collector-emitter saturation voltage, V

CEsat

R

j

1M

(figure 15), a forward current, I , is applied to the IR

F

diode and a low collector current, I , in the phototransis-

C

tor. V

is then measured across collector and emitter

CEsat

94 8218

terminals as shown in figure 15.

Switching Characteristics

Definition

Figure 15.

V

S

I

F

Each electronic device generates a certain delay between

input and output signals as well as a certain amount of

amplitude distortion. A simplified circuit (figure 16)

shows how the input and output signals of optocouplers

can be displayed on a dual-trace oscilloscope.

GaAs-Diode

Channel I

Channel II

The following switching characteristics can be deter-

mined by comparing the timing of the output current

waveform to that of the input current waveform

(figure 17).

96 11697

Figure 16.

24

TELEFUNKEN Semiconductors

06.96

96 11698

I

F

0

t

p

I

C

t

pulse duration

delay time

rise time

turn-on time

storage time

fall time

p

100%

90%

d

r

(= t + t )

on

s

d

r

f

(= t + t )

turn-off time

off

s

f

10%

0

t

r

t

d

t

s

t

f

t

on

t

off

Figure 17.

increased. Another time reduction (especially in fall

Improvements of Switching Characteristics

of Phototransistors and Darlington Photo-

transistors

With normal transistors, switching tunes can be reduced

if the drive signal level and hence the collector current is

time t ) can be achieved by using a suitable base resistor.

f

However, this can only be done at the expense of a

decreasing CTR.

TELEFUNKEN Semiconductors

25

06.96

Taping of SMD Couplers

TEMIC couplers in SMD packages are available in an anti- The blister tape is a plastic strip with impressed component

static 12 mm blister tape (in accordance with DIN IEC cavities, covered by a top tape. For orders add “GS12” to the

286-3) for automatic component insertion.

part number, e.g., TCMT1020GS12.

96 12363

Figure 18. Blister tape

technical drawings

according to DIN

specifications

4.1

3.9

3.7

1.6

1.4

2.1

1.9

1.85

1.65

0.3 max.

5.55

5.45

12.3

11.7

5.4

5.2

6.6

6.4

1.6

1.4

8.1

7.9

96 11942

Figure 19. Tape dimensions in mm

Number of Components

Quantity per reel:

2000 pcs

(minimum quantities for order)

26

TELEFUNKEN Semiconductors

06.96

Technical Information

Peel test requirement:

50 20 gm

Temperature/ Pressure settings:

Seal pressure

front/ rear

35 psi

Real temperature

front/ rear

145 – 150°C

Wheel pressure

25 – 30 psi

Production run quantity:

Trailer

38 pcs – 300 mm min.

Production units

2000 pcs

Leader

63 pcs – 500 mm min.

94 8158

De-reeling direction

40 empty

min. 75 empty

160 mm

Tape leader

compartments

Carrier leader

Carrier trailer

Figure 20. Beginning and end of reel

W

1

34.0

32.0

N

2.5

1.5

21.5

20.5

W

2

12.90

12.75

95 10518

Figure 21. Reel dimensions

TELEFUNKEN Semiconductors

27

06.96

Missing Devices

Assembly Instructions

General

A maximum of 0.5% of the total number of components

per reel may be missing, exclusively missing components

at the beginning and at the end of the reel. Maximum of

three consecutive components may be missing, provided

this gap is followed by six consecutive compartments.

The tape leader is at least 160 mm and is followed by a

carrier leader with at least 10 and not more than 20 empty

compartments. The tape leader may include the carrier

trailer, providing the two are not connected together. The

last component is followed by a carrier tape trailer with

at least 10 empty compartments and is sealed with cover

tape.

Optoelectronic semiconductor devices can be mounted in

any position.

Connecting wires of less than 0.5 mm diameter may be

bent, provided the bend is not less than 1.5 mm from the

bottom of the case and no mechanical stress has an affect

on it. Connection wires of larger diameters, should not be

bent.

If the device is to be mounted near heat-generating

components, consideration must be given to the resultant

increase in ambient temperature.

Soldering Instructions

Top Tape Removal Force

Protection against overheating is essential when a device

is being soldered. Therefore, the connection wires should

be left as long as possible. The time during which the

specified maximum permissible device junction temper-

ature is exceeded at the soldering process should be as

short as possible (one minute maximum). In the case of

plastic encapsulated devices, the maximum permissible

soldering temperature is governed by the maximum

permissible heat that may be applied to the encapsulant

rather than by the maximum permissible junction

The removal force lies between 0.1 N and 1.0 N at a

removal speed of 5 mm/s.

In order to prevent the components from popping out of

the blisters, the top tape must be pulled off at an angle of

180°C with respect to the feed direction.

Ordering Designation

The type designation of the device in SO8 package is temperature.

given by the appendix number: GS12.

The maximum soldering iron (or solder bath)

temperatures are given in table 2. During soldering, no

forces must be transmitted from the pins to the case (e.g.,

by spreading the pins).

Example:

TCMT1020-GS12

Table 2. Maximum soldering temperatures

Iron Soldering

Wave or Reflow Soldering

Iron

Distance of the

Maximum

Allowable

Soldering

Time

Soldering Tem- Distance of the

Maximum

Allowable

Soldering

Time

Temperature Soldering Posi-

tion from the

perature

Soldering Posi-

tion from the

Lower Edge of

the Case

see temperature/time Lower Edge of

profiles

the Case

Devices in

metal case

245 C

350 C

260 C

300 C

1.5 mm

5.0 mm

2.0 mm

5.0 mm

5 s

10 s

5 s

3 s

245 C

1.5 mm

5 s

300 C

235 C

260 C

5.0 mm

2.0 mm

3 s

8 s

5 s

Devices in

plastic case

3 mm

Devices in

plastic case

<3 mm

300 C

5.0 mm

3 s

260 C

2.0 mm

3 s

28

TELEFUNKEN Semiconductors

06.96

Size of the printed circuit board

Absorption coefficient of the surfaces

Packing density

Soldering Methods

There are several methods for soldering devices onto the

substrate. The following list is not complete.

(a)

Soldering in the vapor phase

Wavelength spectrum of the radiation source

Ratio of radiated and convected energy

Soldering in saturated vapor is also known as condensa-

tion soldering. This soldering process is used as a batch

system (dual vapor system) or as a continuous single va-

por system. Both systems may also include a pre-heating

of the assemblies to prevent high temperature shock and

other undesired effects.

Temperature/time profiles of the entire process and the in-

fluencing parameters are given in figure 26.

(c)

Wave soldering

In wave soldering one or more continuously replenished

waves of molten solder are generated, while the substrates

to be soldered are moved in one direction across the crest

of the wave.

(b)

Infrared soldering

By using infrared (IR) reflow soldering, the heating is

contact-free and the energy for heating the assembly is

derived from direct infrared radiation and from convec-

tion.

Temperature/time profiles of the entire process are given

in figure 26.

The heating rate in an IR furnace depends on the absorp-

tion coefficients of the material surfaces and on the ratio

of component’s mass to an As-irradiated surface.

(d)

Iron soldering

This process cannot be carried out in a controlled situa-

tion. It should therefore not be used in applications where

reliability is important. There is no SMD classification

for this process.

The temperature of parts in an IR furnace, with a mixture

of radiation and convection, cannot be determined in ad-

vance. Temperature measurement may be performed by

measuring the temperature of a certain component while

it is being transported through the furnace.

(e)

Laser soldering

This is an excess heating soldering method. The energy

absorbed may heat the device to a much higher tempera-

ture than desired. There is no SMD classification for this

process at the moment.

The temperatures of small components, soldered together

with larger ones, may rise up to 280 C.

Influencing parameters on the internal temperature of the

component are as follows:

(f)

Resistance soldering

Time and power

This is a soldering method which uses temperature-con-

trolled tools (thermodes) for making solder joints. There

is no SMD classification for this process at the moment.

Mass of the component

Size of the component

TELEFUNKEN Semiconductors

29

06.96

Temperature-Time Profiles

300

94 8625

10 s

max. 240°C

ca. 230°C

250

215°C

200

150

100

max. 160°C

max. 40 s

90 – 120 s

full line : typical

dotted line : process limits

50

2–4 K/s

Lead Temperature

0

50

100

150

200

250

Time ( s )

Figure 22. Infrared reflow soldering optodevices (SMD package)

300

94 8626

5 s

Lead Temperature

250

200

150

100

235°...260°C

second wave

ca. 2 K/s

full line : typical

dotted line : process limits

first wave

ca. 200 K/s

forced cooling

100°...130°C

ca. 5 K/s

2 K/s

50

0

50

100

150

200

250

Time ( s )

Figure 23. Wave soldering double wave optodevices

30

TELEFUNKEN Semiconductors

06.96

case of the device should be mounted directly onto the

cooling plate.

Heat Removal

The heat generated in the semiconductor junction(s) must

be moved to the ambient. In the case of low-power

devices, the natural heat conductive path between case

and surrounding air is usually adequate for this purpose.

The edge length, , derived from figures 25 and 26 in

order to obtain a given R

with and :

value, must be multiplied

thCA

In the case of medium-power devices, however, heat

conduction may have to be improved by the use of star-

or flag-shaped heat dissipators which increase the heat

radiating surface.

where

= 1.00 for vertical arrangement

= 1.15 for horizontal arrangement

= 1.00 for bright surface

= 0.85 for dull black surface

Example

The heat generated in the junction is conveyed to the case

or header by conduction rather than convection; a

measure of the effectiveness of heat conduction is the

inner thermal resistance or thermal resistance junction

case, R , whose value is given by the construction of

thJC

the device.

For an IR emitter with

T

= 100°C and

jmax

Any heat transfer from the case to the surrounding air

involves radiation convection and conduction, the effec-

R

thJC

= 100 K/W, calculate the edge length for a 2 mm

thick aluminium square sheet having a dull black surface

( = 0.85) and vertical arrangement ( = 1), T

tiveness of transfer being expressed in terms of an R

thCA

= 70°C

amb

value, i.e., the case ambient thermal resistance. The total

thermal resistance, junction ambient is therefore:

and P

= 200 mW.

tot max

T_jmax– T_amb

R_thJCR_thCA

R

thJA

= R + R

thJC thCA

P_{tot max}

The total maximum power dissipation, P

semiconductor device can be expressed as follows:

, of a

totmax

T_jmax– T

R_thCA

^amb–R_thJC

P_{tot max}

T_jmax– T_amb

R_thJA

T_jmax– T_amb

R_thJCR_thCA

P_totmax

100°C – 70°C

R_thCA

– 100 K W

0.2 W

where:

30

0.2

– 100 K W

T

the maximum allowable junction temperature

jmax

T

the highest ambient temperature likely to be

reached under the most unfavourable conditions

amb

R_thCA

T

50 K W

T_case– T_amb

R

the thermal resistance, junction case

thJC

thJA

thCA

the thermal resistance, junction ambient

can be calculated from the relationship :

the thermal resistance, case ambient, depends on

cooling conditions. If a heat dissipator or sink is used,

then R depends on the thermal contact between case

and heat sink, heat propagation conditions in the sink and

the rate at which heat is transferred to the surrounding air.

T_jmax– T_amb

R_thJCR_thCA

T_case– T_amb

R_thCA

P_{tot max}

thCA

R_thCA(T_jmax– T_amb

R_thJCR_thCA

)

T

T_case– T_amb

Therefore, the maximum allowable total power

dissipation for a given semiconductor device can be

influenced only by changing T

and R

. The value

thCA

amb

50 K W

(100°C – 70°C)

of R

could be obtained either from the data of heat

thCA

100 K W 50 K W

sink suppliers or through direct measurements.

In the case of cooling plates as heat sinks, the approach

outlines in figures 25 and 26 can be used as guidelines.

The curves shown in both figures 25 and 26 give the

50 K W

30°C

T

150 K W

thermal resistance R

of square plates of aluminium

thCA

10°C

10 K

with edge length, a, and with different thicknesses. The

TELEFUNKEN Semiconductors

31

06.96

100

10

1

100

10

1

T = 10°C

30°C

60°C

T = 10°C

30°C

60°C

120°C

Plate thickness : 0.5 mm

Plate thickness : 2 mm

10 100

1000

10

100

a (mm )

a ( mm )

94 7834

94 7835

Figure 25.

Figure 24.

However, equipment life and reliability have to be taken

into consideration and therefore a larger sink would nor-

With R

= 50 k/W and

= 10°C, a plate of 2 mm mally be used to avoid operating the devices continuously

thCA

thickness has an edge length = 28 mm.

at their maximum permissible junction temperature.

32

TELEFUNKEN Semiconductors

06.96

Handling Instructions

Protection against Electrostatic

Damage

Use electrostatically safe equipment and machinery.

Removal of Electrostatic Charges

Connect conductors (metals, etc.) to ground, using dedi-

cated grounding lines. To prevent dangerous shocks and

damaging discharge surges, insert a resistance of 800 k

between conductor and grounding line.

Although electrostatic breakdown is most often

associated with IC semiconductor devices, optoelectro-

nic devices are also prone to such a breakdown.

Miniaturized and highly integrated components are par-

ticularly sensitive.

Connect conveyors, solder baths, measuring machines,

and other equipment to ground, using dedicated, ground-

ing lines.

Sensitivity

Use ionic blowers to neutralize electrostatic charges on

insulators. Blowers pass charged air over the targeted ob-

ject, neutralizing the existing charge. They are useful for

discharging insulators or other objects that cannot be

effectively grounded.

Breakdown Voltages

Typical electrostatic voltages in the working environment

can easily reach several thousand volts, well above the

level required to cause a breakdown. As market require-

ments are moving towards greater miniaturization, lower

power consumption, and higher speeds, optoelectronic

devices are becoming more integrated and delicate. This

means that they are becoming increasingly sensitive to

electrostatic effects.

Human Electrostatic

The human body readily picks up electrostatic charges,

and there is always some risk that human operators may

cause electrostatic damages to the semiconductor devices

they handle. The following counter measures are essen-

tial.

Device Breakdown

Electrostatic discharge events are often imperceptible. Anti-Static Wrist Straps

This might cause the following problems.

All people who come into direct contact with semicon-

ductors should wear anti-static wrist straps, i.e., those in

charges of parts supply and people involved in mounting,

board assembly and repair.

Delay Failure

Electrostatic discharge may damage the device or change

its characteristics without causing immediate failure. The

device may pass inspection, move into the market, then

fail during its initial period of use.

Be sure to insert a resistance of 800 k to 1 M into the

straps. The resistance protects against electrical shocks

and prevents instantaneous and potentially damaging dis-

charges from charged semiconductor devices.

Difficulty in Identifying Discharge Site

Be sure that the straps are placed directly next to the skin,

placing them over gloves, uniforms or other clothing re-

duces their effectiveness.

Human beings generally cannot perceive electrostatic

discharges of less than 3000 V, while semiconductor de-

vices can sustain damage from electrostatic voltages as

low as 100 V. It is often very difficult to locate the process

at which electrostatic problems occur.

Antistatic Mats, Uniforms and Shoes

The use of anti-static mats and shoes is effective in places

where use of a wrist strap is inconvenient (for example,

when placing boards into returnable boxes). To prevent

static caused by friction with clothing, personnel should

wear anti-static uniforms, gloves, sleeves aprons, finger

covers, or cotton apparel.

Basic Countermeasures

Optoelectronic devices must be protected from static

electricity at all stages of processing. Each device must

be protected from the time it is received until the time it

has been incorporated into a finished assembly. Each pro-

cessing stage should incorporate the following measures.

Protection during Inspection, Mounting and

Assembly

Suppression of Electrostatic Generation

The personnel has to ensure that hands do not come into

direct contact with leads. Avoid non-conductive finger

covers. Cover the work desk with grounded anti-static

mats.

Keep relative humidity at 50 to 70% (if humidity is above

70%, morning dew may cause condensation).

Remove materials which might cause electrostatic

generation (such as synthetic resins) from your work-

place. Check the appropriateness of floor mats, clothing

(uniforms, sweaters, shoes), parts trays, etc.

Storage and Transport

Always use conductive foams, tubes, bags, reels or trays

when storing or transporting semiconductor devices.

TELEFUNKEN Semiconductors

33

06.96

Mounting Precautions

Cleaning

General

Installation

Optoelectronic devices are particularly sensitive with

regard to cleaning solvents. The Montreal Protocol for

environmental protection calls for a complete ban on the

use of chlorofluorocarbons. Therefore, the most harmless

chemicals for optoelectronic devices should be used for

environmental reasons. The best solution is to use a

modem reflow paste or solder composition which does

not require a cleaning procedure. No cleaning is required

when the fluxes are guaranteed to be non-corrosive and

of high, stable resistivity.

Installation on PWB

When mounting a device on PWB whose pin-hole pitch

does not match the lead pin pitch of the device, reform the

device pins appropriately so that the internal chip is not

subjected to physical stress.

Installation Using a Device Holder

Emitters and detectors are often mounted using a holder.

When using this method, make sure that there is no gap

between the holder and device.

Cleaning Procedures

Certain kinds of cleaning solvents can dissolve or pene-

trate the transparent resins which are used in some types

of sensors. Even black molding components used in stan-

dard isolators are frequently penetrated between the mold

compound and lead frame. Inappropriate solvents may

also remove the marking printed on a device. It is there-

fore essential to take care when choosing solvents to

remove flux.

Installation Using Screws

When lead soldering is not adequate to securely retain a

photointerrupter, it may be retained with screws.

3

The tightening torque should not exceed 6 kg/cm . An

excessive tightening torque may deform the holder,

which results in poor alignment of the optical axes and

degrades performance.

Cleaning is not required if the flux in the solder material

is non-aggressive and any residues are guaranteed to be

non corrosive an longterm stable of high resistivity.

Lead Forming

Lead pins should be formed before soldering. Do not

apply forming stress to lead pins during or after soldering.

For light emitters or detectors with lead frames, lead pins

should be formed just beneath the stand-off cut section.

For optocouplers or optosensors using dual-in-line

packages, lead pins should be formed below the bent

section so that forming stress does not affect the inside of

the device. Stress to the resin may result in disconnection.

In cleaning procedures using wet solvents only high

purity Ethyl and Isopropyl alcohol are recommended.

The S-series of DIL isolators is also suited for cleaning in

high purity water.

In each case, the devices are immersed in the liquid for

typically 3 min. and afterwards immediately dried for at

least 15 minutes at 50°C in dry air.

When forming lead pins, do not bend the same portion re- In table 3, appropriate cleaning procedures for various

peatedly, otherwise the pins may break.

product lines are summarized.

34

TELEFUNKEN Semiconductors

06.96

Table 3. Appropriate cleaning procedures for several product lines

Cleaning Procedure

Product Lines

Sensors

Solvent

Procedure

DIL-Coupler

System “A” System “S”

High Voltage

Couplers

––

Ethylalcohol

No cleaning of

solder materials

Immersion +

drying

Isopropylalcohol Immersion +

drying

1

Water

Immersion +

drying

––

acceptable

not acceptable

acceptable only if transistor base is not connected to the outside

––

1

Precautions

c.

Promote the breakage of band wires

Intensified cleaning methods such as ultrasonic cleaning,

steam cleaning, and brushing can cause damage to opto-

electronic devices. They are generally not recommended.

This method should only be used after extensive trials

have been run to ensure that problems do not occur.

Ultrasonic cleaning (unless well controlled) can damage

the devices due to its mechanical vibrations.

Brushing can scratch package surfaces. Moreover, it can

remove printed markings.

Using high-intensity ultrasonic cleaning, the process

might:

Special care should be taken to use only high purity or

chemically well-controlled solvents. Especially chloride

ions from flux or solvents that remain in the package are

a high risk for the long-time stability of any electronic

device. These as well as other promote corrosion on the

a.

Promote dissolution or crack the package surface

and thus affect the performance of e.g., the sen-

sors

b.

Promote separation of the lead frame and resin chip which can interrupt all bond connections to the out-

and thus reduce humidity resistance.

side leads.

TELEFUNKEN Semiconductors

35

06.96

Quality Information

TEMIC’s Continuous Improvement Activities TEMIC Tools for Continuous Improvement

TEMIC qualifies materials, processes and process

Quality training for ALL personnel including

changes.

production, development, marketing and sales

departments

TEMIC uses Process FMEA (Failure Mode and

Effects Analysis) for all processes. Process and

machine capability as well as Gage R&R (Repeatabil-

ity & Reproducibility) are proven.

Zero defect mindset

Permanent quality improvement process

Total Quality Management (TQM)

TEMIC’s internal qualifications correspond to

IEC 68–2 and MIL STD 883.

TEMIC periodically requalifies device types (Short

Term Monitoring, Long Term Monitoring).

TEMIC’s Quality Policy established by the

Management Board

TEMIC uses SPC for significant production parame-

ters. SPC is performed by trained operators.

Quality system certified per ISO 9001 on July 12,

1993 (Commercial Quality System)

TEMIC’s Burn-In of selected device types.

TEMIC’s 100% testing of final products.

Quality system formerly approved per AQAP-1

(Military Quality System)

TEMIC’s lot release is carried out via sampling. Sam-

pling acceptance criterion is always c = 0.

TEMIC’s Quality Policy

Our goal is to achieve total customer satisfaction

through everything we do.

Therefore, the quality of our products and services

is our number one priority.

Quality comes first!

All of us at TEMIC are part of the process of

continuous improvement.

36

TELEFUNKEN Semiconductors

06.96

General Quality Flow Chart Diagram

95 11464

Development

Qualification

Production

Material

Incoming

inspection

Wafer processing

Quality control

SPC

Assembly

Quality control

SPC

100% Final test

Quality control

AOQ

Lot release via sampling

Acceptance criterion c=0

Monitoring

SPC : Statistical Process Control

AOQ : Average Outgoing Quality

Stock/ customer

TELEFUNKEN Semiconductors

37

06.96

Process Flow Charts

Quality Assurance

Production

Materials

Incoming

Inspection

Frame coding

Lead frame

Q Gate

QC Monitor

1.Chip Aatach and curing

IR Emitter

Q Gate

Silver epoxy glue

QC Monitor

2.Chip attach and curing

Wire bonding

IR Detector

Bond wire

Q Gate

100% visual control

QC Gate

QC Monitor

Reflector attach and curing

Frame sorting

Reflector

Epoxy

Q Gate

Molding

Deflashing

Post curing

Molding compound

Q Gate

QC Monitor

QC Gate

Tin plating

Tin

Q Gate

Frame sorting

Rejects

Backside coding

QC Gate

QC Monitor

Cutting

Bending

Load into tubes

100% Test in tubes

Tubes

Q Gate

QC Gate

100% Function test at T =100°C

Rejects

amb

100% Isolation voltage test

Final test

Total rejects

QC Monitor

Marking

Color

Q Gate

Output test

Packing

Stock

Packing

96 11937

38

TELEFUNKEN Semiconductors

06.96

Assembly Flow Chart for Standard Opto-Coupler

Frame

Diced Wafer

FG

st

Frame Preparation

1

Optical

AQL

SPC

R

Die Attach

Visual

AQL

SPC

Pull Test

Shear Test

Rip/Peel Test

Wire Bond

nd

2

Optical

AQL

SPC

R

Reflector Load

Heatstake /Casting

Visual

Molding

Tin Plating

Visual

AQL

Monitor

AQL

R

Cutting

Marking

rd

3

Optical

Burn–In

Electrical Test

100%

Sample Test

AQL 0.065

Prepacking (Box)

Visual

SPC

AQL

R

Final Packing

Barcoding

CBW

96 11938

TELEFUNKEN Semiconductors

06.96

39

Qualification and Release

New wafer processes, packages and device types are Critical packages are selected: two assembly lots are sub-

qualified according to the internal TEMIC jected to the qualification procedure representing that

Semiconductors specification QSA 3000.

package group. A positive result will release all similar

packages.

QSA 3000 consists of five parts (see figure 27).

Device type release: The device type released is the

Wafer process release: The wafer process release is the

fundamental release/qualification for the various

technologies used by TEMIC Semiconductors. Leading

device types are defined fo various technologies. Three

wafer lots of these types are subjected to an extensive

qualification procedure and are used to represent this

technology. A positive result will release the technology.

release of individual designs.

Monitoring: Monitoring serves both as the continuous

monitoring of the production and as a source of data for

calculation of early failures (early failure rate: EFR).

Product or process changes are released via ECN (Engi-

neering Change Note). This includes proving process

capability and meeting the quality requirements.

Package release: The package release is the fundamental

release/ qualification for the different packages used. Test procedures utilized are IEC 68–2–... and MIL–

Package groups are defined (see figure 27).

STD–883 D respectively.

QSA 3000

Qualification of

process changes

Wafer process

qualification

Package

qualification

Device type

qualification

Monitoring

Figure 26. Structure of QSA 3000

40

TELEFUNKEN Semiconductors

06.96

Statistical Methods for Prevention

To manufacture high-quality products, it is not sufficient As a part of the continuous improvement process, all

controlling the product at the end of the production pro- TEMIC Semiconductors’ employees are trained in using

cess.

new statistical methods and procedures.

Quality has to be ‘designed-in’ during process- and prod-

uct development. In addition to that, the ‘designing-in’

must also be ensured during production flow. Both will be

achieved by means of appropriate measurements and

tools.

Reliability

The requirements concerning quality and reliability of

products are always increasing. It is not sufficient to only

deliver fault–free parts. In addition, it must be ensured

that the delivered goods serve their purpose safely and

failure free, i.e., reliably. From the delivery of the device

and up to its use in a final product, there are some occa-

sions where the device or the final product may fail

despite testing and outgoing inspection.

Statistical Process Control (SPC)

R&R– (Repeatability and Reproducibility) tests

Up– Time Control (UTC)

Failure Mode and Effect Analysis (FMEA)

Design Of Experiments (DOE)

In principle, this sequence is valid for all components of

a product.

Quality Function Deployment (QFD)

TEMIC Semiconductors has been using SPC as a tool in

production since 1990/91.

For these reasons, the negative consequences of a failure,

which become more serious and expensive the later they

occur, are obvious. The manufacturer is therefore inter-

ested in supplying products with the lowest possible

By using SPC, deviations from the process control goals

are quickly established. This allows control of the pro-

cesses before the process parameters run out of specified

limits. To assure control of the processes, each process

step is observed and supervised by trained personnel. Re-

sults are documented.

AOQ (Average Outgoing Quality) value

EFR (Early Failure Rate) value

LFR (Long-term Failure Rate) value

Process capabilities are measured and expressed by the

process capability index (C ).

pk

Validation of the process capability is required for new

processes before they are released for production.

Average Outgoing Quality (AOQ)

All outgoing products are sampled after 100% testing.

This is known as “Average Outgoing Quality” (AOQ).

The results of this inspection are recorded in ppm (parts

per million) using the method defined in JEDEC 16.

Before using new equipment and new gauges in produc-

tion, machine capability (C

= machine capability

mk

index) or R&R (Repeatability & Reproducibility) is used

to validate the equipment’s fitness for use.

Up–Time is recorded by an Up–Time Control (UTC) sys-

tem. This data determines the intervals for preventive

maintenance, which is the basis for the maintenance plan.

Early Failure Rate (EFR)

EFR is an estimate (in ppm) of the number of early fail-

ures related to the number of devices used. Early failures

are normally those which occur within the first 300 to

1000 hours. Essentially, this period of time covers the

guarantee period of the finished unit. Low EFR values are

therefore very important to the device user. The early life

failure rate is heavily influenced by complexity. Conse-

quently, ‘designing-in’ of better quality during the

development and design phase, as well as optimized pro-

A process–FMEA is performed for all processes (FMEA

= Failure Mode and Effect Analysis). In addition, a de-

sign– or product– FMEA is used for critical products or

to meet agreed customer requirements.

Design of Experiments (DOE) is a tool for the statistical

design of experiments and is used for optimization of pro-

cesses. Systems (processes, products and procedures) are

analyzed and optimized by using designed experiments.

A significant advantage compared to conventional meth- cess control during manufacturing, significantly reduces

ods is the efficient perfomance of experiments with the EFR value. Normally, the early failure rate should not

minimum effort by determining the most important inputs be significantly higher than the random failure rate. EFR

for optimizing the system.

is given in ppm (parts per million).

TELEFUNKEN Semiconductors

41

06.96

Long-Term Failure Rate (LFR)

LFR shows the failure rate during the operational period

of the devices. This period is of particular interest to the

manufacturer of the final product. Based on the LFR

value, estimations concerning long-term failure rate, reli-

ability and a device’s or module’s usage life may be

derived. The usage life time is normally the period of

constant failure rate. All failures occuring during this

period are random.

The larger the sample size, the narrower the confi-

dence interval.

The lower the confidence level of the statement, the

narrower the confidence interval.

The confidence level applicable to the failure rate of the

whole lot when using the estimated value of is derived

2

from the -distribution. In practice, only the upper limit

of the confidence interval (the maximum average failure

rate) is used.

Within this period the failure rate is:

Sum of failures

(Quantity Time to failure)

1

Therefore:

hours

2

2 (r; P_A)

1

h

in

max

n

t

The measure of is FIT (Failures In Time = number of

9

failures in 10 device hours).

2

2 (r; P_A)

LFR

1

10⁹in [FIT]

n

t

Example

A sample of 500 semiconductor devices is tested in a op-

erating life test (dynamic electric operation). The devices

operate for a period of 10,000 hours.

r:

Number of failures

P : Confidence level

A

Failures:

1 failure after 1000 h

1 failure after 2000 h

n:

t:

n

Sample size

Time in hours

t: Device hours

The failure rate may be calculated from this sample by

2

1

h

1

1000

1

2000 498 10000

2

The /2 for are taken from table 4.

2

1

h

1

4.01 10^–7

4983000

h

For the above example from table 4:

/2 (r=2; P =60%) = 3.08

2

A

This is a -value of 400 FIT, or this sample has a failure

rate of 0.04% / 1000 h on average.

n

t = 4983000 h

3.08

6.18

1

h

10^–7

max

4983000

Early Failures

EFR

Operating Period

LFR

Wear Out

Failures

This means that the failure rate of the lot does not exceed

0.0618% / 1000 h (618 FIT) with a probability of 60%.

If a confidence level of 90% is chosen from the table 5:

2

/2 (r=2; P =90%) = 5.3

A

5.3

4983000

1

h

1.06

10^–6

max

t

95 11401

Figure 27. Bath tub curve

This means that the failure rate of the lot does not exceed

0.106% / 1000 h (1060 FIT) with a probability of 90%.

Confidence Level

Operating Life Tests

The failure rate calculated from the sample is an esti-

mate of the unknown failure rate of the lot.

Number of devices tested:

n

c

= 50

Number of failures

(positive qualification):

The interval of the failure rate (confidence interval) may

be calculated, depending on the confidence level and

sample size.

= 0

Test time:

t = 2000 hours

The following is valid:

Confidence level:

P = 60%

A

42

TELEFUNKEN Semiconductors

06.96

2

/2 (0; 60%) 0.93

0.93

expectations concerning the quality and reliability of the

products have become higher.

1

h

9.3

10^–6

max

Manufacturers of semiconductors must therefore assure

long operating periods with high reliability but in a short

time. Sample stress testing is the most commonly used

way of assuring this.

50 2000

This means, that the failure rate of the lot does not exceed

0.93% / 1000 h (9300 FIT) with a probability of 60%.

The rule of Arrhenius describes this temperature-depen-

dent change of the failure rate.

This example demonstrates that it is only possible to

verify LFR values of 9300 FIT with a confidence level of

60% in a normal qualification tests (50 devices, 2000 h).

E

A

1

T

–

k

T

1 2

(T₂)

(T₁)

e

To obtain LFR values which meet today’s requirements

Boltzmann’s constant

(

50 FIT), the following conditions have to be fulfilled:

–5

k = 8.63 10 eV/K

Activation energy

E in eV

Very long test periods

Large quantities of devices

A

Junction temperature real operation

Accelerated testing (e.g., higher temperature)

T in Kelvin

1

Table 4.

Junction temperature stress test

T in Kelvin

2

Number of

Failures

Confidence Level

Failure rate real operation

(T )

50%

0.60

1.68

2.67

3.67

4.67

5.67

6.67

7.67

8.67

9.67

10.67

60%

0.93

2.00

3.08

4.17

5.24

6.25

7.27

8.33

9.35

10.42

11.42

90%

2.31

95%

2.96

1

0

1

Failure rate stress test

(T )

2

3.89

4.67

2

5.30

6.21

The acceleration factor is described by the exponential

function as being:

3

6.70

7.69

E

4

8.00

9.09

A

1

T

–

(T₂)

(T₁)

k

T

1 2

AF

e

5

9.25

10.42

11.76

13.16

14.30

15.63

16.95

6

10.55

11.75

13.00

14.20

15.40

Example

7

The following conditions apply to an operating life stress

test:

8

9

Environmental temperature during stress test

10

T = 125°C

A

Power dissipation of the device

P = 250 mW

V

Mean Time to Failure (MTTF)

Thermal resistance junction/environment

For systems which can not be repaired and whose devices

must be changed, e.g., semiconductors, the following is

valid:

R

thJA

= 100 K/W

The system temperature/junction temperature results

from:

1

MTTF

T = T + R

P

V

J

A

thJA

T = 125°C + 100 K/W 250 mW

J

MTTF is the average fault-free operating period per a

monitored (time) unit.

T = 150°C

J

Operation in the field at an ambient temperature of 100°C

and at an average power dissipation of 100 mW is uti-

Accelerating Stress Tests

Innovation cycles in the field of semiconductors are lized. This results in a junction temperature in operation

becoming shorter and shorter. This means that products of T = 110°C. The activation energy used for bipolar

J

must be brought to the market quicker. At the same time, technologies is E = 0.7 eV.

A

TELEFUNKEN Semiconductors

43

06.96

The resulting acceleration factor is:

1000

100

10

0.8 eV

0.7 eV

0.6 eV

0.5 eV

E

A

1

–

(423K)

(383K)

k

383K 423K

AF

e

AF 7.4

This signifies that, regarding this example, the failure rate

is lower by a factor of 7.4 compared to the stress test.

Other accelerating stress tests may be:

100

150

155

125

1

55

75

95

115

135

Humidity (except displays type TDS.)

T = 85°C

A

95 11369

Junction Temperature (°C)

RH = 85%

Figure 28. Acceleration factor for different activation energies

normalized to T_j= 55°C

Temperature cycling

Temperature interval as specified

Safety

Reliability and Safety

The tests are carried out according to the requirements of

appropriate IEC–standards (see also chapter ‘Qualifica-

tion and Release’).

All semiconductor devices have the potential of failing or

degrading in ways that could impair the proper operation

of safety systems. Well-known circuit techniques are

available to protect against and minimize the effects of

such occurrences. Examples of these techniques include

redundant design, self-checking systems and other fail-

safe techniques. Fault analysis of systems relating to

safety is recommended. Environmental factors should be

analyzed in all circuit designs, particularly in safety-re-

lated applications.

Activation Energy

There are some conditions which need to be fulfilled in

order to use Arrhenius’ method:

The validity of Arrhenius’ rule has to be verified.

If the system analysis indicates the need for the highest

degree of reliability in the component used, it is recom-

mended that TEMIC be contacted for a customized

reliability program.

‘Failure-specific’ activation energies must be deter-

mined.

These conditions may be verified by a series of tests.

Today, this procedure is generally accepted and used as a

basis for estimating operating life. The values of activa-

tion energies can be determined by experiments for

different failure mechanisms.

Toxicity

Although gallium arsenide and gallium aluminium arse-

nide are both arsenic compounds, under normal use

conditions they should be considered relatively benign.

Both materials are listed by the 1980 NIOH ‘Toxicology

Values often used for different device groups are:

Opto components 0.7 eV

of Materials’ with LD values (Lethal Dosis, probability

50

50%) comparable to common table salt.

Bipolar ICs

MOS ICs

Transistors

Diodes

0.7 eV

0.6 eV

0.7 eV

Accidental electrical or mechanical damage to the de-

vices should not affect the toxic hazard, so the units can

be applied, handled, etc. as any other semiconductor de-

vice. Although the chips are small, chemically stable and

By using this method, it is possible to provide long–term protected by the device package, conditions that could

predictions for the actual operation of semiconductors break these crystalline compounds down into elements or

even with relatively short test periods.

other compounds should be avoided.

44

TELEFUNKEN Semiconductors

06.96

If design engineers work with TEMIC optocouplers, they

will find some terms and definitions in the data sheets

which relate to VDE 0884. These will now be explained:

Optocouplers in Switching

Power Supplies

Rated isolation voltages:

The following chapters should give a full understanding

on how to use optocouplers which provide protection

against electric shock for designs.

V

IO

is the voltage between the input terminals and the

output terminals.

Safety standards for optocouplers are intended to prevent

injury or damage due to electric shock

Note: All voltages are peak voltages!

V

IOWM

is a maximum rms. voltage value of the opto-

Two levels of electrical interface are normally used:

couplers assigned by TEMIC. This characterizes the

long term withstand capability of its insulation.

Reinforced, or safe insulation is required in an opto-

coupler interface between a hazardous voltage circuit

(like an ac line) and a touchable Safety Extra Low

Voltage (SELV) circuit.

V

IORM

is a maximum recurring peak (repetitive)

voltage value of the optocoupler assigned by TEMIC.

This characterizes the long-term withstand capability

against recurring peak voltages.

Basic insulation is required in an optocoupler interface

between a hazardous voltage circuit and a non-touchable

Extra Low Voltage (ELV) circuit.

V

IOTM

is an impulse voltage value of the optocoupler

assigned by TEMIC. This characterizes the long-term

withstand capability against transient over voltages.

The most widely used insulation for optocouplers in

switch-mode power supply is reinforced insulation

(class II). The following information enables the designer

to understand the safety aspects, the basic concept of the

VDE 0884 and the design requirements for applications.

Isolation test voltage for routine tests is at factor 1.875

higher than the specified V

/ V

(peak).

IOWM

IORM

A partial discharge test is a different test method to the

normal isolation voltage test. This method is more sensi-

tive and will not damage the isolation behavior of the

optocoupler like other test methods probably do.

VDE 0884 - Facts and Information

Optocouplers for line-voltage separation must have

several national standards. The most accepted standards

are:

The VDE 0884 therefore does not require a minimum

thickness through insulation. The philosophy is that a

mechanical distance only does not give you an indication

of the safety reliability of the coupler. It is more recom-

mendable to check the total construction together with the

assembling performance. The partial discharge test

method can monitor this more reliably.

UL/ CSA for America

BSI for Great Britain

SETI, SEMKO, NEMKO, DEMKO for Nordic

countries (Europe)

The following tests must be done to guarantee this safety

requirement.

VDE for Germany

Today, most manufacturers operate on a global scale. It is

therefore mandatory to perform all approvals.

100% test (piece by piece) for one second at a voltage

level of specified V

/V

(peak) multiplied by

IOWM IORM

1.875

coulomb.

test criteria is partial discharge less than 5 pico

The VDE 0884 is now becoming a major safety standard

in the world, partly due to German experts having a long

record of experience in this field. It is therefore worth-

while understanding some requirements and methods of

the VDE 0884.

A lotwise test at V

level of specified V

1.5 for 1 minute

for 10 seconds and at a voltage

IOTM

/ V

IOWM

(peak) multiplied by

IORM

test criteria is partial discharge less

than 5 pico coulomb.

At the moment there are two drafts which are being circu-

lated to set the VDE 0884 to an international IEC

standard.

Design example:

The line ac voltage is 380 V rms. Your application class

The IEC 47 (CO) 1042 describes the terms and defini- is III (DIN/VDE 0110 Part 1/1.89). According to table 5,

tions IEC 47 (CO) 1175 the test procedure, while the you must calculate with a maximum line voltage of 600 V

test method itself is already incorporated in IEC 747-5.

and a transient over voltage of 6000 V.

TELEFUNKEN Semiconductors

45

06.96

Table 5. Recommended transient overvoltages related to ac/ dc line voltage (peak values)

V

/V

Appl. Class I

Appl. Class II

Appl. Class III

Appl. Class IV

IOWM IORM

up to

50 V

350 V

500.V

500 V

800.V

800 V

1500.V

2500 V

400 V

1500 V

2500.V

4000 V

600 V

100 V

150 V

300 V

600.V

1000 V

800 V

1500 V

2500 V

4000 V

6000 V

1500 V

2500 V

4000 V

6000 V

8000 V

800 V

1200 V

Now select the CNY75 from our TEMIC coupler Optocouplers

program. The next voltage step of 380 V is 600 V consequently pass all tests undertaken. This then enables

(V ).The test voltages are 1600 V for the CNY75 for you to go ahead and start your design.

approved to the VDE 0884

must

IOWM

the routine test and 6000 V/ 1300 V for the sample test.

Layout Design Rules

The VDE 0884 together with the isolation test voltages

also require very high isolation resistance, tested at an

ambient temperature of 100°C.

The previous chapter described the important safety

requirements for the optocoupler itself; but the know-

ledge of the creepage distance and clearance path is also

important for the design engineer if the coupler is to be

mounted onto the circuit board. Although several

different creepage distances referring to different safety

standards, like the IEC 65 for TV or the IEC 950 for office

equipment, computer, data equipment etc. are requested,

there is one distance which meanwhile dominates

switching power supplies: This is the 8 mm spacing

requirement between the two circuits: The hazardous

input voltage (ac 240 power-line voltage) and the safety

low voltage.

Apart from these tests for the running production, the

VDE Testing and Approvals Institute also investigates the

total construction of the optocoupler. The VDE 0884

requires life tests in a very special sequence; 5 lots for

5 different subgroups are tested.

The sequence for the main group is as follows:

Cycle test

Vibration

This 8 mm spacing is related to the 250 V power line and

defines the shortest distance between the conductive parts

(either from the input to the output leads) along the case

of the optocoupler, or across the surface of the print board

between the solder eyes of the optocoupler input/ output

leads, as shown in figure 29. The normal distance input

to output leads of an optocoupler is 0.3”. This is too tight

for the 8 mm requirement. The designer now has two

options: He can provide a slit in the board, but then the

airgap is still lower; or he can use the “G” optocoupler

from TEMIC. “G” stands for a wide-spaced lead form of

0.4” and obtains the 8 mm creepage, clearance distance.

The type designation for this type of “G” coupler is, for

example: CNY75G.

Shock

Dry heat

Accelerated damp heat

Low temperature storage (normally –55°C)

Damp heat steady state

Final measurements.

Finally there is another chapter concerning the safety

ratings. This is described in VDE 0884.

The maximum safety ratings are the electrical, thermal

and mechanical conditions that exceed the absolute

maximum ratings for normal operations. The philosophy

is that optocouplers must withstand a certain exceeding

of the input current, output power dissipation, and

temperature for at least a weekend. The test time is

actually 72 hours. This is a simulated space of time where

failures may occur.

The spacing requirements of the 8 mm must also be taken

into consideration for the layout of the board.

Figures 30 and 31 provide examples for your layout.

The creepage distance is also related to the resistance of

the tracking creepage current stability. The plastic

material of the optocoupler itself and the material of the

It is the designer’s task to create his design inside of the board must provide

a specified creeping-current

maximum safety ratings.

resistance.

46

TELEFUNKEN Semiconductors

06.96

The behavior of this resistance is tested with special test The VDE 0884 requires a minimum of a CTI of 175. All

methods described in the IEC 112. The term is “CTI” TEMIC optocouplers have a CTI of 275.

(Comparative Tracking Index).

Creepage

path

Clearance path

Figure 29. Isolation creepage/ clearance path

(The creepage path is the shortest distance between conductive parts along the surface of the isolation material.

The clearance path is the shortest distance between conductive parts.)

0.4 ”/ 10.16 mm

0.332 ”/ 8.2 mm

Figure 30. Optocoupler mounting on a board (side view)

TELEFUNKEN Semiconductors

47

06.96

Power interface area

G = 0.322 ” / 8.2 mm

G

Layer

SELV control circuit area

Power interface area

G

SELV control circuit area

Figure 31. “Top view of optocoupler mounting on a board”

(clearance on PC board: 0.322 / 8.2 mm, creepage path on PC board is 0.322 / 8.2 mm)

Not only the solder eyes of the coupler itself on the board must have the 8 mm distance,

but also all layers located between the SELV areas and the power interface areas.

TEMIC Optocoupler Program

Construction

An optocoupler is comparable with a transformer or a reasons why TEMIC optocouplers are well-accepted by

mechanical relay; but its advantages are smaller manufacturers of power supplies.

dimensions, shorter switching time, no contact bounces,

no interference caused by arcs and the possibility of

adapting a signal already in the coupler for the following

stage of the circuit.

This combination together with the safety aspects

provides outstanding advantages for use in power

supplies. Safety factors in particular depend on the

design, construction and selected materials. TEMIC

optocouplers are designed with a coplanar lead frame,

0.75 mm

where the die are mounted side by side. A semi-ellipsoid

with even better reflection capabilities is fitted over each

dice. The entire system is then casted in a plastic material

impermeable to the infrared range and of high di-electric

strength. The whole system is now molded with a special

Figure 32. Cut through of a TEMIC optocoupler

(thickness through insulation)

Overview

mold compound to ensure that no external influences The information given in this brochure enables the

such as light or dust etc. interfere with the functioning of designer to select the right optocoupler for his applica-

the coupler (see figure 32). This design has several tion. The previous chapters focused only on safety

advantages: The “thickness through insulation”, the aspects. Apart from this there are other characteristics for

clearance (internally) between the input and the output the optocoupler. Table 6 enables the designer to select the

side is fixed at 0.75 mm and is thus mechanically stable optocoupler to suit his own needs. This selection should

even under thermal overloads, i.e., the possibility of a be done using the most important characteristics like CTR

short circuit caused by material deformation is excluded. (Current Transfer Ratio) and devices with or without base

Deviations of this distance during the production process connection. The designer may ask for our data sheets for

are also excluded. These two features are the specific detailed information.

48

TELEFUNKEN Semiconductors

06.96

n.c.

6

B

6

C

5

C

E

4

E

5

4

1

3

2

1

3

2

A (+) C (–)

n.c.

A (+) C (–)

n.c.

Figure 33. Without base connection

Figure 34. With base connection

6–PIN STD Isolators

Table 6. Devices offering (VDE 0884-tested)

CTR

V

CE

> 32 V

V

CE

> 32 V

V

CE

> 90 V

IC/ IF

Ungrouped CTR

Grouped CTR

Base

With

Without

With Without

Connection

> 20%

> 50%

4N25(G)V

4N35(G)V

CQY80N(G) TCDT1100(G)

CNY17(G)–1 TCDT1101(G)

TCDT1120(G)

> 100%

TCDT1110(G)

40 – 80%

63 – 125%

100 – 200%

160 – 320%

CNY17(G)–2 TCDT1102(G) CNY75(G)A TCDT1122(G)

CNY17(G)–3 TCDT1103(G) CNY75(G)B TCDT1123(G)

CNY75(G)C TCDT1124(G)

G = wide space 0.4” lead form, for 8 mm PC board spacing requirements

TELEFUNKEN Semiconductors

49

06.96

Appendix

Approvals List

As mentioned before, as long there is no equivalent IEC– TEMIC divides optocouplers into ”coupling systems”.

standard to the VDE 0884, optocouplers must still fulfill Each coupling system represents the same technology,

all other national safety standards. The copies of docu- materials etc. The coupling systems are indicated with

ments present all certificates the designer needs for capital letters and each coupler is marked with this cou-

worldwide acceptance of his power supply (see pling system indicator letter. The certificates at least also

ANT018). All the approvals below are most important. If refer to the systems and list all subtypes to the related cou-

the designer needs any others, he must be aware that there pling system. The user is able to find his selected coupler

are many agreements between national institutes, e.g., on the certificate.

UL for USA is also accepted by CSA/Canada.

Certified Optocouplers for Switching Power Supplies

Coupling System

G, H, I, K

Coupling System

A, C, S

German standard

VDE 0884

CQY80N CQY80NG

CNY17(G)1–3

CNY64

CNY65

CNY66

CNY12N

File no.

System S: 70753

System A: 68301

System G: 70902

System H: 70977

System J: 70977

System K: 70977

CNY75(G)A–C

TCDT1101(G)A–C

TCDT1101(G)–1103(G)

TCDT1110(G)

TCDT1120–1124(G)

American (USA)

Test institute

UL

CNY64

CNY65

CNY66

CNY21N

4N25(G)V

4N35(G)V

1577

File no. E76222

CNY64

CNY65

CNY21N

Nordic approvals

(SETI)

K3010P(G)–K3012P(G)

K3020P(G)–K3023P(G)

British Std

BS415

CNY65

BS7002

Internal stucture

Case (examples)

95 10532

95 10531

95 10537

50

TELEFUNKEN Semiconductors

06.96

Application of Optoelectronic Reflex Sensors

TCRT1000, TCRT5000, TCRT9000, CNY70

TEMIC optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors.

Typical applications include:

Copying machines

Video recorders

Printers

Object counters

Industrial control

Proximity switch

Vending machines

Special features:

Compact design

Ambient light protected

Operation range 0 to 20 mm

High sensitivity

Cut-off frequency up to 40 kHz

High quality level, ISO 9000

Automated high-volume production

Low dark current

Minimized crosstalk

These sensors present the quality of perfected products. The components are based on TEMIC’s many year’s

experience as one of Europe’s largest producers of optoelectronic components.

TELEFUNKEN Semiconductors

51

06.96

Drawings of the Sensors

94 9318

94 9442

TCRT1000

TCRT5000

94 9320

TCRT9000

CNY70

52

TELEFUNKEN Semiconductors

06.96

Optoelectronic Sensors

In many applications, optoelectronic transmitters and tivity of the phototransistors are optimized for this

receivers are used in pairs and linked together optically. wavelength.

Manufacturers fabricate them in suitable forms. They are

There are no focusing elements in the sensors described,

available for a wide range of applications as ready-to-use

though lenses are incorporated inside the TCRT5000 in

components known as couplers, transmissive sensors

both active parts (emitter and detector). The angular

(or interrupters), reflex couplers and reflex sensors.

characteristics of both are divergent. This is necessary to

Increased automation in industry in particular has height-

realize a position-independent function for easy practical

ened the demand for these components and stimulated the

use with different reflecting objects.

development of new types.

In the case of TCRT5000, the concentration of the beam

pattern to an angle of 16° for the emitter and 30° for the

detector, respectively, results in operation on an increased

range with optimized resolution. The emitting and accep-

General Principles

The operating principles of reflex sensors are similar to

those of transmissive sensors. Basically, the light emitted

by the transmitter is influenced by an object or a medium

on its way to the detector. The change in the light signal

caused by the interaction with the object then produces a

change in the electrical signal in the optoelectronic

receiver.

tance angles in the other reflex sensors are about 45°. This

is an advantage in short distance operation. The best local

resolution is with the reflex sensor TCRT9000.

The main difference between the sensor types is the

mechanical outline (as shown in the figures, see page

before), resulting in various electrical parameters and op-

tical properties. A specialization for certain appli-cations

is necessary. Measurements and statements on the data of

the reflex sensors are made relative to a reference surface

with defined properties and precisely known reflecting

properties. This reference medium is the diffusely reflect-

ing Kodak neutral card, also known as grey card

(KODAK neutral test card; KODAK publi-cation No.

Q-13, CAT 1527654). It is also used here as the reference

medium for all details. The reflection factor of the white

side of the card is 90% and that of the grey side is 18%.

The main difference between reflex couplers and trans-

missive sensors is in the relative position of the

transmitter and detector with respect to each other. In the

case of the transmissive sensor, the receiver is opposite

the transmitter in the same optical axis, giving a direct

light coupling between the two. In the case of the reflex

sensor, the detector is positioned next to the transmitter,

avoiding a direct light coupling.

The transmissive sensor is used in most applications for

small distances and narrow objects. The reflex sensor,

however, is used for a wide range of distances as well as

for materials and objects of different shapes. It sizes by

virtue of its open design.

Table 7 shows the measured reflection of a number of

materials which are important for the practical use of

sensors. The values of the collector current given are

relative and correspond to the reflection of the various

surfaces with regard to the sensor’s receiver. They were

= 20 mA and at a

measured at a transmitter current of I_F

In the following chapters, we will deal with reflex sensors

placing particular emphasis on their practical use. The

components TCRT1000, TCRT5000, TCRT9000 and

CNY70 are used as examples. However, references made

to these components and their use apply to all sensors of

a similar design.

distance of the maximum light coupling. These values

apply exactly to the TCRT9000, but are also valid for the

other reflex sensors. The ‘black-on-white paper’ section

stands out in table 7. Although all surfaces appear black

to the ‘naked eye’, the black surfaces emit quite different

reflections at a wavelength of 950 nm. It is particularly

The reflex sensors TCRT1000, TCRT5000, TCRT9000 important to account for this fact when using reflex

and CNY70 contain IR-emitting diodes as transmitters sensors. The reflection of the various body surfaces in the

and phototransistors as receivers. The transmitters emit infrared range can deviate significantly from that in the

radiation of a wavelength of 950 nm. The spectral sensi- visible range.

TELEFUNKEN Semiconductors

53

06.96

Table 7. Relative collector current (or coupling factor) of the reflex sensor TCRT9000 for reflection on various materials.

Reference is the white side of the Kodak neutral card. The sensor is positioned perpendicular with respect to the surface.

The wavelength is 950 nm.

Kodak neutral card

White side (reference medium)

Gray side

Plastics, glass

100%

White PVC

90%

11%

20%

Gray PVC

Paper

Blue, green, yellow, red PVC

White polyethylene

White polystyrene

Gray partinax

40-80%

90%

Typewriting paper

94%

100%

67%

Drawing card, white (Schoeller Durex)

Card, light gray

120%

9%

Envelope (beige)

100%

84%

Fiber glass board material

Without copper coating

With copper coating on the reverse side

Glass, 1 mm thick

Plexiglass, 1 mm thick

Metals

Packing card (light brown)

Newspaper paper

12-19%

30%

97%

Pergament paper

30-42%

9%

Black on white typewriting paper

Drawing ink (Higgins, Pelikan, Rotring)

Foil ink (Rotring)

10%

4-6%

50%

10%

76%

7%

Aluminum, bright

Aluminum, black anodized

Cast aluminum, matt

Copper, matt (not oxidized)

Brass, bright

110%

60%

Fiber-tip pen (Edding 400)

Fiber-tip pen, black (Stabilo)

Photocopy

45%

110%

160%

150%

Plotter pen

HP fiber–tip pen (0.3 mm)

Black 24 needle printer (EPSON LQ-500)

Ink (Pelikan)

84%

28%

Gold plating, matt

Textiles

100%

26%

White cotton

110%

1.5%

Pencil, HB

Black velvet

Parameters and Practical Use of the Reflex Sensors

A reflex sensor is used in order to receive a reflected I /I is generally known as the coupling factor, k. The

c

F

signal from an object. This signal gives information on following approximate relationship exists between k and

the position, movement, size or condition (e.g., coding) OT:

of the object in question. The parameter that describes the

k = I / I = [(S B)/h]

/

e

function of the optical coupling precisely is the so-called

optical transfer function (OT) of the sensor. It is the ratio

of the received to the emitted radiant power.

c

F

r

where B is the current amplification, S = I /Φ (photo-

transistor’s spectral sensitivity), and h = I /Φ (pro-

portionality factor between I and Φ of the transmitter).

b

r

F

e

r

F

e

OT

e

In figures 35 and 36, the curves of the radiant intensity, I ,

e

Additional parameters of the sensor, such as operating

range, the resolution of optical distance of the object, the

sensitivity and the switching point in the case of local

changes in the reflection, are directly related to this

optical transfer function.

of the transmitter to the forward current, I , and the sensi-

F

tivity of the detector to the irradiance, E , are shown

e

respectively. The gradients of both are equal to unity

slope.

In the case of reflex sensors with phototransistors as This represents a measure of the deviation of the curves

receivers, the ratio I /I (the ratio of collector current I from the ideal linearity of the parameters. There is a good

to the forward current I ) of the diode emitter is preferred proportionality between I and I and between I and E

c

F

c

F

e

F

c

e

to the optical transfer function. As with optocouplers, where the curves are parallel to the unity gradient.

54

TELEFUNKEN Semiconductors

06.96

Greater proportionality improves the relationship

between the coupling factor, k, and the optical transfer

function.

Coupling Factor, k

In the case of reflex couplers, the specification of the

coupling factor is only useful by a defined reflection and

distance. Its value is given as a percentage and refers here

to the diffuse reflection (90%) of the white side of Kodak

neutral card at the distance of the maximum light

coupling. Apart from the transmitter current, I , and the

F

temperature, the coupling factor also depends on the

distance from the reflecting surface and the frequency

that is, the speed of reflection change.

For all reflex sensors, the curve of the coupling factor as

a function of the transmitter current, I_F, has a flat maxi-

mum at approximately 30 mA (figure 37). As shown in

the figure, the curve of the coupling factor follows that of

the current amplification, B, of the phototransistor. The

influence of temperature on the coupling factor is rela-

tively small and changes approximately –10% in the

range of –10 to +70°C (figure 38). This fairly favorable

temperature compensation is attributable to the opposing

temperature coefficient of the IR diode and the photo-

transistor.

The maximum speed of a reflection change that is detect-

able by the sensor as a signal is dependent either on the

switching times or the threshold frequency, f , of the com-

c

ponent. The threshold frequency and the switching times

of the reflex sensors TCRT1000, TCRT5000, TCRT9000

and CNY70 are determined by the slowest component in

Figure 35. Radiant intensity, I_e= f (I_F), of the IR transmitter

the system

in this case the phototransistor. As usual,

the threshold frequency, f , is defined as the frequency at

c

which the value of the coupling factor has fallen by 3 dB

(approximately 30%) of its initial value. As the frequency

increases, f > f , the coupling factor decreases.

c

Figure 36. Sensitivity of the reflex sensors’ detector

Figure 37. Coupling factor k = f (IF) of the reflex sensors

TELEFUNKEN Semiconductors

55

06.96

The data were recorded for the Kodak neutral card with

90% diffuse reflection serving as the reflecting surface,

arranged perpendicular to the sensor. The distance, A,

was measured from the surface of the reflex sensor.

The emitter current, I , was held constant during the

F

measurement. Therefore, this curve also shows the course

of the coupling factor and the optical transfer function

over distance. It is called the working diagram of the

reflex sensor.

The working diagrams of all sensors (figure 40) shows a

maximum at a certain distance, A . Here the optical

o

Figure 38. Change of the coupling factor, k,

with temperature, T

coupling is the strongest. For larger distances, the

collector current falls in accordance with the square law.

When the amplitude, I, has fallen not more than 50% of

its maximum value, the operation range is at its optimum.

As a consequence, the reflection change is no longer

easily identified.

Figure 39 illustrates the change of the cut-off frequency

at collector emitter voltages of 5, 10 and 20 V and various

load resistances. Higher voltages and low load resistances

significantly increase the cut-off frequency.

The cut-off frequencies of all TEMIC reflex sensors are

high enough (with 30 to 50 kHz) to recognize extremely

fast mechanical events.

In practice, it is not recommended to use a large load

resistance to obtain a large signal, dependent on the speed

of the reflection change. Instead, the opposite effect takes

place, since the signal amplitude is markedly reduced by

the decrease in the cut-off frequency. In practice, the bet-

ter approach is to use the given data of the application

(such as the type of mechanical movement or the number

of markings on the reflective medium). With these given

data, the maximum speed at which the reflection changes

can be determined, thus allowing the maximum

frequency occurring to be calculated. The maximum

permissible load resistance can then be selected for this

frequency from the diagram f as a function of the load

c

resistance, R .

L

Figure 39. Cut-off frequency, f_c

Working Diagram

The dependence of the phototransistor collector current

on the distance, A, of the reflecting medium is shown in

figures 40 and 41 for the reflex sensors TCRT1000 and

TCRT9000 respectively.

56

TELEFUNKEN Semiconductors

06.96

a) TCRT5000

b) TCRT9000

c) CNY 70

d) TCRT1000

Figure 40. Working diagram of reflex sensors TCRT5000, CNY70, TCRT9000 and TCRT1000

Resolution, Trip Point

The behavior of the sensors with respect to abrupt The displacement of the signal corresponds to an uncer-

changes in the reflection over a displacement path is tainty when recording the position of the reflection

determined by two parameters: the resolution and the trip change, and it determines the resolution and the trip point

point.

of the sensor.

If a reflex sensor is guided over a reflecting surface with

a reflection surge, the radiation reflected back to the

detector changes gradually, not abruptly. This is depicted

in figure 41a. The surface, g, seen jointly by the trans-

mitter and detector, determines the radiation received by

the sensor. During the movement, this surface is gradually

covered by the dark reflection range. In accordance with

the curve of the radiation detected, the change in collector

current is not abrupt, but undergoes a wide, gradual transi-

tion from the higher to the lower value

The trip point is the position at which the sensor has com-

pletely recorded the light/ dark transition, that is, the

range between the points X + X and X – X around

o

d/2

o

d/2

X . The displacement, X , therefore, corresponds to the

o

d

width or the tolerance of the trip point. In practice, the

section lying between 10 and 90% of the difference

I = I – I is taken as X . This corresponds to the rise

c

c1

c2

d

time of the generated signal since there is both movement

and speed. Analogous to switching time, displacement,

X , is described as a switching distance.

d

As illustrated in figure 41b, the collector current falls to

the value I , which corresponds to the reflection of the

c2

dark range, not at the point X , but at the points X + X ,

o

d/2

displaced by X

.

d/2

TELEFUNKEN Semiconductors

57

06.96

The resolution is the sensor’s capability to recognize The line is clearly recognized as long as the line width is

small structures. Figure 42 illustrates the example of the X . If the width is less than X , the collector

curve of the reflection and current signal for a black line current change, I – I , that is the processable signal,

d

c1

c2

measuring d in width on a light background (e.g., on a becomes increasingly small and recognition increasingly

sheet of paper). The line has two light/ dark transitions

uncertain. The switching distance

or better its inverse

can therefore be taken as a resolution of the sensor.

the switching distance X_d/2is, therefore, effective twice.

The switching distance, X , is predominantly dependent

d

a)

on the mechanical/ optical design of the sensor and the

distance to the reflecting surface. It is also influenced

by the relative position of the transmitter/ detector axis.

Figure 43 shows the dependence of the switching

distance, X , on the distance A with the sensors placed in

d

two different positions with respect to the separation line

of the light/ dark transition.

g

The curves marked position 1 in the diagrams correspond

to the first position. The transmitter/ detector axis of the

sensor was perpendicular to the separation line of the

transition. In the second position (curve 2), the trans-

mitter/ detector axis was parallel to the transition.

b)

In the first position (1) all reflex sensors have a better res-

olution (smaller switching distances) than in position 2.

The device showing the best resolution is TCRT9000. It

can recognize lines smaller than half a millimeter at a dis-

tance below 0.5 mm.

It should be remarked that the diagram of TCRT5000 is

scaled up to 10 cm. It shows best resolution between

2 and 10 cm.

Figure 41. Abrupt reflection change with associated I_ccurve

All sensors show the peculiarity that the maximum reso-

lution is not at the point of maximum light coupling, A ,

but at shorter distances.

Reflection

Line

o

R

1

In many cases, a reflex sensor is used to detect an object

that moves at a distance in front of a background, such as

a sheet of paper, a band or a plate. In contrast to the

examples examined above, the distances of the object

surface and background from the sensor vary.

d = line width

R

2

X

d

Collector current

I

C1

X

< line width

X

d

I

C2

Since the radiation received by the sensor’s detector

depends greatly on the distance, the case may arise when

the difference between the radiation reflected by the

object on the background is completely equalized by the

distance despite varying reflectance factors. Even if the

sensor has sufficient resolution, it will no longer supply

a processable signal due to the low reflection difference.

In such applications it is necessary to examine whether

there is a sufficient contrast. This is performed with the

help of the working diagram of the sensor and the reflec-

tance factors of the materials.

X

d

Collector current

I

C1

I

C2

X

> line width

X

d

X

d

Figure 42. Reflection of a line of width d and corresponding

curve of the collector current I_c

58

TELEFUNKEN Semiconductors

06.96

a) TCRT5000

c) TCRT1000

b) CNY70

d) TCRT9000

Figure 43. The switching distance as a function of the distance A for the reflex sensors TCRT5000, CNY70, TCRT1000

and TCRT9000

Sensitivity, Dark Current and

Crosstalk

The lowest photoelectric current that can be processed as

a useful signal in the sensor’s detector determines the

weakest usable reflection and defines the sensitivity of

the reflex sensor. This is determined by two parameters

the dark current of the phototransistor and the cross-

talk.

The phototransistor as receiver exhibits a small dark

current, I , of a few nA at 25°C. However, it is depen-

CEO

dent on the applied collector-emitter voltage, V , and to

CE

a much greater extent on the temperature, T (see

figure 44). The crosstalk between the transmitter and

detector of the reflex sensor is given with the current, I .

cx

I

is the collector current of the photoelectric transistor

cx

measured at normal IR transmitter operating conditions

without a reflecting medium.

Figure 44. Temperature-dependence of the collector dark

current

TELEFUNKEN Semiconductors

59

06.96

It is ensured that no (ambient) light falls onto the photo- Indirect ambient light, that is ambient light falling onto

electric transistor. This determines how far it is possible the reflecting objects, mainly reduces the contrast

to guarantee avoiding a direct optical connection between between the object and background or the feature and

the transmitter and detector of the sensor.

surroundings. The interference caused by ambient light is

predominantly determined by the various reflection

properties of the material which in turn are dependent on

the wavelength.

At I = 20 mA, the current I is approximately 50 nA for

F

cx

the TCRT9000 and 15 nA for the CNY70, TCRT1000 and

TCRT5000.

If the ambient light has wavelengths for which the ratio

of the reflection factors of the object and background is

the same or similar, its influence on the sensor’s function

is small. Its effect can be ignored for intensities that are

not excessively large. On the other hand, the object/ back-

ground reflection factors can differ from each other in

such a way that, for example, the background reflects the

ambient light much more than the object. In this case, the

contrast disappears and the object cannot be detected. It

is also possible that an uninteresting object or feature is

detected by the sensor because it reflects the ambient light

much more than its surroundings.

I

can also be manifested dynamically. In this case, the

cx

origin of the crosstalk is electrical rather than optical.

For design and optical reasons, the transmitter and

detector are mounted very close to each other.

Electrical interference signals can be generated in the

detector when the transmitter is operated with a pulsed or

modulated signal. The transfer capability of the inter-

ference increases strongly with the frequency. Steep pulse

edges in the transmitter’s current are particularly

effective here since they possess a large portion of high

frequencies. For all TEMIC sensors, the ac crosstalk,

In practice, ambient light stems most frequently from

filament, fluorescent or energysaving lamps. Table 8

gives a few approximate values of the irradiance of these

sources. The values apply to a distance of approximately

50 cm, the spectral range to a distance of 850 to 1050 nm.

The values of table 8 are only intended as guidelines for

estimating the expected ambient radiation.

I

, does not become effective until frequencies of

cxac

4 MHz upwards with a transmission of approximately

3 dB between the transmitter and detector.

The dark current and the dc- and ac crosstalk form the

overall collector fault current, I . It must be observed that

the dc-crosstalk current, I

cf

, also contains the dark

cxdc

current, I

, of the phototransistor.

CEO

In practical applications, it is generally rather difficult to

determine the ambient light and its effects precisely.

Therefore, an attempt to keep its influence to a minimum

is made from the outset by using a suitable mechanical

design and optical filters. The detectors of the sensors are

equipped with optical filters to block such visible light.

Furthermore, the mechanical design of these components

is such that it is not possible for ambient light to fall

directly or sideways onto the detector for object distances

of up to 2 mm.

I = I

+ I

cxac

cf

cxdc

This current determines the sensitivity of the reflex

sensor. The collector current caused by a reflection

change should always be at least twice as high as the fault

current so that a processable signal can be reliably identi-

fied by the sensor.

Ambient Light

If the ambient light source is known and is relatively

weak, in most cases it is enough to estimate the expected

power of this light on the irradiated area and to consider

the result when dimensioning the circuit.

Ambient light is another feature that can impair the sensi-

tivity and, in some circumstances, the entire function of

the reflex sensor. However, this is not an artifact of the

component, but an application specific characteristic.

AC operation of the reflex sensors offers the most

effective protection against ambient light. Pulsed opera-

tion is also helpful in some cases.

The effect of ambient light falling directly on the detector

is always very troublesome. Weak steady light reduces

the sensor’s sensitivity. Strong steady light can, depend- Compared with dc operation, the advantages are greater

ing on the dimensioning (R , V ), saturate the transmitter power and at the same time significantly

L

C

photoelectric transistor. The sensor is ‘blind’ in this

condition. It can no longer recognize any reflection

change. Chopped ambient light gives rise to incorrect

signals and feigns non-existent reflection changes.

greater protection against faults. The only disadvantage

is the greater circuit complexity, which is necessary in this

case. The circuit in figure 48 is an example of operation

with chopped light.

60

TELEFUNKEN Semiconductors

06.96

Table 8. Examples for the irradiance of ambient light sources

Light source (at 50 cm distance)

2

Frequency (Hz)

Irradiance E (µW/cm )

e

850 to 1050 nm

Steady light

AC light (peak value)

Filament lamp (60 W)

500

25

Fluorescent lamp OSRAM (65 W)

Economy lamp OSRAM DULUX (11 W)

30

16

100

14

The optimum transmitter current. I , for dc operation is

F

Application Examples, Circuits

between 20 and 40 mA. I = 20 mA is selected in this

F

case.

The most important characteristics of the TEMIC reflex

sensors are summarized in table 9. The task of this table

is to give a quick comparison of data for choosing the

right sensor for a given application.

As shown in figure 37, the coupling factor is at its maxi-

mum. In addition, the degradation (i.e., the reduction of

the transmitted IR output with aging) is minimum for

currents under 40 mA (< 10% for 10000 h) and the self

heating is low due to the power loss (approximately

50 mW at 40 mA).

Application Example with

Dimensioning

+5 V

With a simple application example, the dimensioning of

the reflex sensor can be shown in the basic circuit with the

aid of the component data and considering the boundary

conditions of the application.

TCRT 9000

74HCTXX

The reflex sensor TCRT9000 is used for speed control. An

aluminum disk with radial strips as markings fitted to the

motor shaft forms the re–flecting object and is located

approximately 3 mm in front of the sensor. The sensor

signal is sent to a logic gate for further processing.

Q

R

S

E

180

15 K

GND

Dimensioning is based on dc operation, due to the simpli-

fied circuitry.

Figure 45. Reflex sensor - basic circuit

Table 9.

Parameter

Symbol

Reflex Sensor Type

CNY70

0.3 mm

0.2 mm

5%

TCRT1000

TCRT5000

2 mm

TCRT9000

Distance of optimum coupling

Distance of best resolution

Coupling factor

A

1 mm

0.8 mm

5%

1 mm

0.5 mm

3%

0

A

1.5 mm

r

k

6%

Switching distance (min.)

Optimum working distance

Operating range

x

1.5 mm

0.2 to 3 mm

9 mm

0.7 mm

0.4 to 2.2 mm

8 mm

1.9 mm

0.5 mm

0.4 to 3 mm

12 mm

d

X

or

A

or

0.2 to 6.5 mm

> 20 mm

TELEFUNKEN Semiconductors

61

06.96

Table 10.

Application Data

Aluminum disk

Markings

Diameter 50 mm, distance from the sensor 3 mm, markings printed on the aluminum

8 radial black stripes and 8 spacings, the width of the stripes and spacings in front of

the sensor is approximately = 4 mm (in a diameter of 20 mm)

Motor speed

1000 to 3000 rpm

Temperature range

Ambient light

Power supply

10 to 60°C

60 W fluorescent lamp, approximate distance 2 m

5 V ± 5%

Position of the sensor

Position 1, sensor/ detector connecting line perpendicular to the strips

Special attention must also be made to the downstream Figure 38 shows a change in the collector current of

logic gate. Only components with a low input offset approximately 10% for 70°C. Another 10% is deducted

current may be used. In the case of the TTL gate and the from I for aging

c1

LS-TTL gate, the I current can be applied to the sensor

LH

I

= 263 µA – (20% 263 µA) = 210 µA

c1

output in the low condition. At –1.6 mA or –400 µA, this

is above the signal current of the sensor. A transistor or an

operational amplifier should be connected at the output of

the sensor when TTL or LS-TTL components are used. A

gate from the 74HCTxx family is used.

The fault current I (from crosstalk and collector dark

current) increases the signal current and is added to I .

Crosstalk with only a few nA for the TCRT9000 is

ignored. However, the dark current can increase up to

1 µA at a temperature of 70°C and should be taken into

account.

cf

c2

According to the data sheet, its fault current I

is

LH

approximately 1 µA.

In addition, 1 µA, the fault current of the 74HCTxx gate,

The expected collector current for the minimum and

maximum reflection is now estimated.

is also added

I

= 30 µA

c2

According to the working diagram in figure 40c, it

follows that when A = 3 mm

The effect of the indirect incident ambient light can most

easily be seen by comparing the radiant powers produced

by the ambient light and the sensor’s transmitter on

I = 0.5

I

cmax

c

2

1 mm of the reflecting surface. The ambient light is then

I

is determined from the coupling factor, k, for

taken into account as a percentage in accordance with the

ratio of the powers.

cmax

I = 20 mA.

F

From table 8:

I

= k

I

F

cmax

2

E (0.5 m) = 40 µW/ cm (dc + ac/ 2)

e

At I = 20 mA, the typical value

F

2

E (2 m) = E (0.5 m) (0.5/ 2)

e

k = 2.8%

(Square of the distance law)

is obtained for k from figure 37.

2

E (2 m) = 2.5 µW/ cm

e

= 0.025 W

sf

However, this value applies to the Kodak neutral card or

the reference surface. The coupling factor has a different

value for the surfaces used (typewriting paper and black-

fiber tip pen). The valid value for these material surfaces

can be found in table 7:

The radiant power (Φ = 0.025 µW) therefore falls on

sf

2

1 mm .

When I = 20 mA, the sensor’s transmitter has the radiant

F

intensity:

k = 94% k = 2.63% for typing paper and

1

e

I_e

0.5 W sr

k = 10% k = 0.28% for black-tip pen

2

(Edding)

(see figure 35)

Therefore:

I

= 0.5

k

1

k

2

I = 263 µA

F

I = 28 µA

F

2

c1

c2

The solid angle for 1 mm surface at a distance of 3 mm

is

1 mm²

1

9

Temperature and aging reduce the collector current. They

sr

(3 mm)²

are therefore important to I and are subtracted from it.

c1

62

TELEFUNKEN Semiconductors

06.96

It therefore follows for the radiant power that:

= I = 55.5 mW

level 2 V and 0.8 V, are now decisive for determining the

resistance, R .

c

e

Circuits with Reflex Sensors

The power of 0.025 µW produced by the ambient light is

therefore negligibly low compared with the correspond-

ing power (approximately 55 µW) of the transmitter.

The couple factor of the reflex sensors is relatively small.

Even in the case of good reflecting surfaces, it is less than

10%. Therefore, the photocurrents are in practice only in

the region of a few µA. As this is not enough to process

the signals any further, an additional amplifier is neces-

sary at the sensor output. Figure 46 shows two simple

circuits with sensors and follow-up operational amplifi-

ers.

The currents I , I would result in full reflecting

c1

c2

surfaces, that is, if the sensor’s visual field only measures

white or black typing paper. However, this is not the case.

The reflecting surfaces exist in the form of stripes.

The signal can be markedly reduced by the limited resolu-

tion of the sensor if the stripes are narrow. The suitable

stripe width for a given distance should therefore be

selected from figure 43. In this case, the minimum

permissible stripe width is approximately 3.8 mm for a

distance of 3 mm (position 1, figure 43d). The markings

measuring 4 mm in width were expediently selected in

this case. For this width, a signal reduction of about 20%

can be permitted with relatively great certainty, so that

The circuit in figure 46b is a transimpedance which offers

in addition to the amplification the advantage of a higher

cut-off frequency for the whole layout.

Two similar amplification circuits incorporating transis-

tors are shown in figure 47.

The circuit in figure 48 is a simple example for operating

the reflex sensors with chopped light. It uses a pulse

generator constructed with a timer IC. This pulse

generator operates with the pulse duty factor of approxi-

mately 1. The frequency is set to approximately 22 kHz.

On the receiver side, a conventional LC resonance circuit

10% of the difference (I – I ) can be subtracted from

c1

c2

I

and added to I .

c1

c2

I

= 210 A – 18 A = 192 A

= 30 A + 18 A = 48 A

c1

c2

(f = 22 kHz) filters the fundamental wave out of the

received pulses and delievers it to an operational ampli-

o

The suitable load resistance, R , at the emitter of the

photo-transistor is then determined from the low and high

levels 0.8 V and 2.0 V for the 74HCTxx gate.

E

fier via the capacitor, C . The LC resonance circuit

k

simultaneously represents the photo transistor’s load

resistance. For direct current, the photo transistor’s load

R < 0.8 V/ I and R > 2.0 V/ I ,

E

c2

E

c1

resistance is very low

in this case approximately 0.4,

i.e., 10.2 k < R < 16.7 k

E

which means that the photo transistor is practically

shorted for dc ambient light.

12 k is selected for R

E

The corresponding levels for determining R must be

E

At resonance frequencies below 5 kHz, the necessary

coils and capacitors for the oscillator become unwieldy

and expensive. Therefore, active filters, made up with op-

erational amplifiers or transistors, are more suitable

(figures 49 and 50). It is not possible to obtain the quality

characteristics of passive filters. In addition to that, the

load resistance on the emitter of the photo transistor has

remarkably higher values than the dc resistance of a coil.

On the other hand, the construction with active filters is

more compact and cheaper. The smaller the resonance

frequency becomes, the greater the advantages of active

filters compared to LC resonant circuits.

used if a Schmitt trigger of the 74HCTxx family is

employed.

The frequency limit of the reflex sensor is then deter-

mined with R = 12 k and compared with the maximum

E

operating frequency in order to check whether signal

damping attributable to the frequency that can occur.

Figure 39 shows for V = 5 V and R = 12 k approxi-

s

E

mately, for the TCRT9000, f = 1.5 kHz.

c

Sixteen black/ white stripes appear in front of the sensor

in each revolution. This produces a maximum signal

frequency of approximately 400 Hz for the maximum

speed of 3000 rpm up to 50 rps. This is significantly less

In some cases, reflex sensors are used to count steps or

objects, while at the same time recognition of a change in

the direction of rotation (= movement direction) is neces-

sary. The circuit shown in figure 51 is suitable for such

than the f of the sensor, which means there is no risk of

c

signal damping.

In the circuit in figure 45, a resistor, R , can be used on the applications. The circuit is composed of two independent

c

collector of the photoelectric transistor instead of R . In channels with reflex sensors. The sensor signals are

E

this case, an inverted signal and somewhat modified formed via the Schmitt trigger into TTL impulses with

dimensioning results. The current I now determines the step slopes, which are supplied to the pulse inputs of the

c1

low signal level and the current I the high. The voltages binary counter 74LS393. The outputs of the 74LS393 are

c2

(V – 2 V) and (V – 0.8 V) and not the high level and low coupled to the reset inputs. This is made in such a way that

s

TELEFUNKEN Semiconductors

63

06.96

the first output, whose condition changes from ‘low’ to The negative pulse at the timer’s output triggers the clock

‘high’, sets the directly connected counter. In this way, the input of the 74HCT74 flip-flop and, at the same time, the

counter of the other channel is deleted and blocked. The reflex sensor’s transmitter via a driver transistor. The

outputs of the active counter can be displaced or flip-flop can be positively triggered, so that the condition

connected to more electronics for evaluation.

of the data input at this point can be received as the edge

of the pulse rises. This then remains stored until the next

rising edge.

It should be mentioned that such a circuit is only suited

to evenly distributed objects and constant movements. If

this is not the case, the channels must be close to each

other, so that the movement of both sensors are collected The reflex sensor is therefore only active for the duration

successively. The circuit also works perfectly if the last of the negative pulse and can only detect reflection

mentioned condition is fulfilled. Figure 52 shows a pulse changes within this time period. During the time of nega-

circuit combining analog with digital components and tive impulses, electrical and optical interferences are

offering the possibility of temporary storage of the signal suppressed. A sample and hold circuit can also be

delivered by the reflex sensor. A timer IC is used as the employed instead of the flip-flop. This is switched on via

pulse generator.

an analog switch at the sensor output as the pulse rises.

a)

b)

+10 V

I

F

R

F

Reflex sensor

= 20 mA

Reflex sensor

220 K

7

4

7

4

TLC271

6

TLC271

2

3

2

3

6

Output

GND

Output

R

S

R

E

1 K

R

l

S

E

F

390

1 K

220 K

R

l

1 K

GND

Figure 46. Circuits with operational amplifier

a)

b)

+10 V

R

E

220

R

C

R

L

1 K

Reflex sensor

BC178B

PNP

R

I

F

Output

= 20 mA

220 K

I

C

K

F

BC108B

NPN

Reflex sensor

Output

= 20 mA

R

L

2.2

F

R

S

E

10 K

GND

R

S

390

1 K

390

GND

Figure 47. Circuits with transistor amplifier

64

TELEFUNKEN Semiconductors

06.96

V

= + 5 V

82

S

1.2 K

7

Reflex sensor

555

3

8

4

DIS

R

7

Q

5

2.7 K

C

K

THR

TR

G

N

D

TLC 271

6

3

2

6

2

CV

Output

100 nF

1

R

4

F

10 nF

100 nF

C

L

0.86

mH

10 K

100

62 nF

GND

Figure 48. AC operation with oscillating circuit to suppress ambient light

+V (10 V)

S

R

S

Reflex sensor

C

F

220

R

A

1 nF

R

9.1 K

7

4

33 K

2

Timer

3

C

K

8

4

7

R

6

DIS

Q

Output

R

1

F

B

6

2

3

TLC 271

(CA3160)

G

N

D

THR

TR

5

CV

5.1 K

R

C

q

l

E

1

555

1 K

22 nF

C

510

100 nF

GND

Timer dimensions:

Active filter :

t (pulse width) = 0.8 RC = 400 s

p

T (period)

= 0.8 (R + R ) C = 1 ms

A

B

C_q

C_f

C

C_fC_q

Q

2 R

R_E

f_o

1 (6.28

C

R)

V_uo

Q²

Figure 49. AC operation with active filter made up of an operational amplifier, circuit and dimensions

TELEFUNKEN Semiconductors

65

06.96

+V (10 V)

S

R

V

R

C

220

Reflex sensor

C

F

1 K

R

A

1.5 nF

C

K

9.1 K

R

Timer

3

8

4

51 K

7

6

C

K

1

F

Output

DIS

555

THR

R

Q

R

NPN

B

1

F

G

5

5.1 K

N

D

CV

2

TR

R

C

q

E

1

33 nF

C

1.8 K

100 nF

GND

Timer dimensions:

Active filter :

t (pulse width) = 0.8 RC = 400 s

p

T (period)

= 0.8 (R + R ) C = 1 ms

A

B

C_q

C_f

C

C_fC_q

Q

2 R

R_E

f_o

1 (6.28

C

R)

V_uo

Q²

Figure 50. AC operation with transistor amplifier as active filter

Left

+5 V

A

QA

Display system

CLK

QB

QC

Reflex sensor

CLR

QD

B

CLK

QA

QB

QC

LS393

A

CLR QD

A

Q

LS393

or report

R

E

RD

CLK

D

74HCT14

+5 V

3.3 K

Reset

15 K

Q

S

D

GND

+5 V

Q

S

D

CLK

Q

RD

Right

GND

Reflex sensor

B

B7474

Display system

A

QA

QB

QC

QD

CLK

R

74HCT14

B

R

E

CLR

V

100

CLK QA

QB

CLR

15 K

LS393

QC

QD

or report

GND

LS393

Figure 51. Circuit for objects count and recognition of movement direction

66

TELEFUNKEN Semiconductors

06.96

V

S

3.3 K

R

82

R

C

l

R

(+5 V)

A

PNP

4

C

K

100

2

3

1

5

S

D

Q

D

R

8

4

B

CLK

Reflex

sensor

7

6

2

6

R

Q

DIS

THR

TR

3

5

RD

Q

555

74HCT74

G

N

D

R

2

CV

1

100 nF

C

GND

Figure 52. Pulse circuit with buffer storage

TELEFUNKEN Semiconductors

67

06.96

Cross Reference List Opto

Competition–Type

Isolators

Competitor

Device

Isolator

TFK–Device

CNY66

Code

Prio

3C63B

3C63C

3C91B

3C91C

3C92B

3C92C

3N243

Hafo

A

3

Isolator

CNY66

CNY18

K120P

B,E

A

Optek

3N244

Optek

K120P

A

3N245

Optek

K120P

B

3N281

Texas

K120P

B

4N25, 25A

4N26

Various Suppliers

Clairex

4N25

A

4N26

A

4N27

A

4N28

A

4N29

4N32

A

4N29A

4N30

4N32

A

4N32

B

4N31

4N32

B

4N32

A

4N33

A

4N35

A

4N37

A

4N38

A

4N38A

CLA7

4N38A

CNY64

CNY21N

CQY80N

CNY75B

TCDT1100

CQY80N

CNY17–1

CNY17–2

CNY17–3

CNY75C

CNY17–1

CNY17–2

CNY17–3

CNY75C

TCDT1101

TCDT1102

A

E

CLA7AA

CNX21

CNX35

CNX36

CNX38

CNX82

CNX83

CNY17A

CNY17B

CNY17C

CNY17D

CNY17–1

CNY17–2

CNY17–3

CNY17–4

CNY17–F1

CNY17–F2

Clairex

E

QTC

A, C

A

QTC

A

QTC

A

Motorola

A

Motorola

A

QTC

A

QTC

A

QTC

A

QTC

A

Various Suppliers

A

68

TELEFUNKEN Semiconductors

06.96

Competition–Type

CNY17–F3

CNY17–F4

CNY47

Competitor

Various Suppliers

QTC

Device

Isolator

TFK–Device

TCDT1103

Code

A

Prio

3

Isolator

TCDT1124

4N25

A

B

CNY47A

CNY48

QTC

4N25

B

QTC

4N32

B

CNY51

QTC

CNY75B

CNY17–1

CQY80N

CNY21N

CNY65

CNY75A

CNY75B

CNY75C

CNY80N

CNY75A

CNY75B

CNY75C

4N28

A

CNY57

QTC

A

CNY57A

CNY62

QTC

A

QTC

B, C

A

CNY63

QTC

CNY65

QTC

CNY75A

CNY75B

CNY75C

GEPS2001

GFH600–1

GFH600–2

GFH600–3

H11A5

QTC

A

QTC

A

QTC

A

QTC

A

QTC

A

QTC

A

QTC

A

QTC

B

H11A5100

H11A520

H11A550

H11A1

QTC

4N35

A

QTC

CQY80N

4N26

B

QTC

B

QTC

A

H11A2

QTC

A

H11A3

QTC

4N25

A

H11A4

QTC

4N27

A

H11AV1

H11AV2

H11AV3

H11B1

QTC

CNY64

4N32

B, E

A

QTC

H11B2

QTC

4N32

A

H11B3

QTC

4N32

A

H11J1

QTC

K3010P

TCDS1001

CNY64

4N25

B

H11J2

QTC

A

H11J3

QTC

B

H11J4

QTC

A

H11J5

QTC

A

H11L1

QTC

A

H11L2

QTC

A

H.24A1

H.24A2

IL–1

QTC

B, E

A

QTC

Siemens

IL–100

TCDS1001

CNY75A

D, E

B

IL–101

IL–201

TELEFUNKEN Semiconductors

69

06.96

Competition–Type

IL–202

Competitor

Siemens

Device

Isolator

TFK–Device

CNY75B

Code

B

Prio

3

IL–250

Siemens

QTC

Isolator

CNY71

CQY80NG

4N27

B

IL–5

A

B

IL–74

IL–CT6

ILCA2–30

ILD–1

MCT6

4N32

CNY74–2

CNY74–4

4N32

ILD–74

ILQ–1

ILQ–74

MCA230

MCA231

MCP3009

MCP3010

MCP3011

MCP3020

MCP3021

MCP3022

MCT2

QTC

4N32

QTC

4N32

A

B

QTC

4N32

QTC

K3010P

K3011P

K3020P

K3021P

K3022P

4N26

A

B

QTC

MCT2E

MCT210

MCT2200

MCT2201

MCT2202

MCT26

QTC

4N25

QTC

4N35

QTC

4N35

A

B

QTC

CQY80N

CNY75B

CNY75A

4N26

QTC

A

B

QTC

MCT26

QTC

4N26

MCT270

MCT271

MCT272

MCT273

MCT274

MCT275

MCT276

MCT277

MCT3

QTC

CQY80N

CNY17–1

CNY75 A

CNY75B

CNY75C

CNY75B

CNY17–1

4N36

QTC

B

QTC

B

QTC

B

QTC

A

B

QTC

4N28

MCT4

QTC

K120P

MCT6

QTC

CNY74–2

CNY75A

4N32

MCT66

QTC

MOC1005

MOC1006

MOC119

MOC205

Motorola

B

TCMT1021

A

70

TELEFUNKEN Semiconductors

06.96

Competition–Type

MOC206

Competitor

Motorola

Device

Isolator

TFK–Device

TCMT1022

Code

A

Prio

3

MOC207

MOC215

MOC216

MOC217

MOC221

MOC222

MOC223

MOC3009

MOC3010

MOC3011

MOC3012

MOC3020

MOC3021

MOC3022

MOC3023

MOC5005

MOC5006

MOC5007

MOC5008

MOC5009

MOC8101

MOC8102

MOC8103

MOC8104

MOC8112

MOC8113

OPI110

Motorola

Optek

Isolator

TCMT1023

TCMT1031

TCMT1032

TCMT1033

TCMT1034

K3010P

A

B

A

K3010P

A

K3011P

A

K3012P

A

K3020P

A

K3021P

A

K3022P

A

K3023P

A

TCDS1001

TCDT1101

TCDT1102

TCDT1103

TCDT1124

TCDT1100

TCDT1110

CNY21N

CNY65

A

B

A

E

OPI113

Optek

D, E

E

OPI120

Optek

CNY66

OPI123

Optek

CNY66

D, E

E

OPI1264A

OPI1264B

OPI1264C

OPI140

Optek

CNY21N

CNY65

Optek

E

Optek

CNY65

B, E

B

Optek

K120P

OPI2100

OPI2150

OPI2151

OPI2152

OPI2153

OPI2154

OPI2155

OPI2250

OPI2251

OPI2252

Optek

CNY75C

4N27

A

Optek

A

Optek

4N27

A

Optek

4N26

A

Optek

CQY80N

4N27

A

Optek

A

Optek

4N26

A

Optek

4N26

A

Optek

4N26

A

Optek

4N25

A

TELEFUNKEN Semiconductors

71

06.96

Competition–Type

OPI2253

Competitor

Optek

Device

Isolator

TFK–Device

CQY80N

Code

A

B

Prio

3

OPI2254

OPI2255

OPI2500

OPI3009

OPI3010

OPI3011

OPI3012

OPI3020

OPI3021

OPI3022

OPI3023

OPI3150

OPI3151

OPI3153

OPI3250

OPI3251

OPI3253

OPI7002

OPI7010

PC508

Optek

Optex

Optek

Sharp

NEC

Isolator

4N26

4N25

CNY71

K3010P

K3011P

K3012P

K3020P

K3021P

K3022P

K3023P

4N33

A

B

4N33

4N32

A

E

CNY64

CNY65

CNY75

K827P

CNY75A

CNY71

K827P

CNY74–2

K827P

CQY80N

4N25

B, E

D, E

A

D

B

PC613

PC627

PC713U

PC733

PC827U

PC829

PC847U

PS2001A

PS2001B

PS2003A

PS2003B

PS2004A

PS2004B

PS2005A

PS2005B

PS2010

NEC

4N32

NEC

4N32

NEC

CQY80N

4N25

A

B

NEC

4N25

PS2011

NEC

CQY80N

4N32

PS2013

NEC

PS2014

NEC

B

PS2015

NEC

CQY80N

4N32

A

B

PS2021

NEC

PS2022

NEC

PS2401A–2

PS2401A–4

NEC

K827P

B

NEC

B

72

TELEFUNKEN Semiconductors

06.96

Competition–Type

SFH600–0

SFH600–1

SFH600–2

SFH600–3

SFH601–1

SFH601–2

SFH601–3

SFH601–4

TIL111

Competitor

Siemens

Device

Isolator

TFK–Device

CNY17–1

Code

A

D

A

B

Prio

3

Siemens

Texas

Isolator

CNY17–2

CNY17–3

CNY75C

CNY17–1

CNY75A

CNY75B

CNY75C

4N27

TIL112

Texas

4N27

TIL113

Texas

4N33

TIL114

Texas

4N25

TIL115

Texas

4N26

TIL116

Texas

4N25

TIL117

Texas

CQY80N

K120P

TIL120

Texas

TIL121

Texas

K120P

TIL124

Texas

CQY80N

4N32

B

TIL125

Texas

B

TIL126

Texas

B

TIL127

Texas

B

TIL153

Texas

4N26

B

TIL154

Texas

4N25

B

TIL155

Texas

CQY80N

4N32

A

B

TIL156

Texas

TLP3051

TLP3052

TLP504–A

TLP521–2

TLP521–4

TLP531–A

TLP531–BL

TLP531–GB

TLP531–GR

TLP531–Y

TLP531–YG

TLP533

Toshiba

K3052P

K3051P

K827P

A

B

K827P

CQY80N

CNY75C

CNY75B

CNY75A

CQY80N

4N32

A

B

TLP535

A

B

TLP571

TLP595

TCDT1900

B

Sensors

CNY28

QTC

Sensor

TCST2103

TCRT9050

TCRT9000

TCST1230

A

4

EE–SMR1–1

EE–SMR3–1

EE–SX1025

Omron

TELEFUNKEN Semiconductors

73

06.96

Competition–Type

GP1A05

Competitor

Device

Sensor

TFK–Device

TCSS6201

Code

A

Prio

4

Sharp

QTC

GP1A21

Sensor

TCYS5201

TCST2103

TCST1103

TCST2103

TCSS2100

TCST1103

TCSS1100

TCST1103

TCST2300

TCST2103

TCST1103

TCST2103

TCST1300

TCST1103

TCST2300

TCST2103

CNY70

A

GP1S01

B, C

A, C

A

GP1S01F

GP1S02

GP1S04

H21A1

H21A2

A

H21A4

A

H21A5

A

H21L

B

H22A1

A

H22A2

A

H22A4

A

H22A5

A

H22L

B

HOA0870–055

HOA0870–251

HOA0870–255

HOA0871–051

HOA0871–255

HOA0872–051

HOA0872–055

HOA0872–251

HOA0872–255

HOA1397–1

HOA1397–2

HOA1872–11

HOA1872–12

HOA1873–11

HOA1873–12

HOA1879–15

MOC7811

MOC7812

MOC7821

MOC7822

MST8

Honeywell

Motorola

QTC

C

B, C

C

B, C

C

B, C

C

CNY70

TCST1103

TCST2103

TCST2300

TCST2103

TCST1103

TCST2000

CNY70

C

B, C

A

E

MST81

QTC

E

OPB706A

OPB706B

OPB706C

OPB710

Optek

C

Optek

CNY70

C

Optek

CNY70

C

Optek

TCSS2100

TCST1000

TCST2000

TCST2103

A, C

B, E

B

OPB804

Optek

OPB813

Optek

OPB813S10

Optek

E

74

TELEFUNKEN Semiconductors

06.96

Competition–Type

OPB814

Competitor

Optek

Device

Sensor

TFK–Device

TCST1103

Code

B, E

B

Prio

4

OPB815

Optek

Texas

Toshiba

Sensor

TCST2103

TCST2000

TCST2103

TCST1103

TCST2300

TCST2103

TCST1300

TCST1103

TCST2300

TCST2103

TCST1300

TCST1103

TCST2300

TCST2103

TCST1000

TCST2000

TCSS1100

TCSS2100

TCST2300

TCST2103

TCST1103

TCST1300

TCST1103

TCST2000

TCSS2100

TCST2103

TCST1103

TCST1202

TCRT1000

TCRT1010

OPB816

OPB817

B, E

C

OPB870N55

OPB870T51

OPB870T55

OPB871N51

OPB871N55

OPB871T51

OPB871T55

OPB872N51

OPB872N55

OPB872T51

OPB872T55

OPB875N55

OPB875T55

OPB971P55

OPB973N55

OPB973T55

OPD819S10

OPD823A

OPD824B

OPD847

C

B, C

C

A, C

B, E

B, C

B, E

C

OPD848

OPD870N51

TIL147

D, E

B

TIL148

TlL143

TlL144

TLP1001

TLP800

B, C

E

TLP801

TLP804

TLP908

TLP908(LB)

E

TELEFUNKEN Semiconductors

75

06.96


型号：	TCMT1020
厂家：	TEMIC SEMICONDUCTORS
描述：	Transistor Output Optocoupler, 1-Element, 2500V Isolation, SOIC-8 输出元件光电
文件：	总77页 (文件大小：1542K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TCMT1020 [TEMIC]

相关型号：

TCMT1020-GS12

TCMT1021

TCMT1021

TCMT1021-GS12

TCMT1022

TCMT1022-GS12

TCMT1023

TCMT1023-GS12

TCMT1024

TCMT1024-GS12

TCMT1030

TCMT1030-GS12