TLLR4400 [TEMIC]
Single Color LED, High Efficiency Red, Tinted Diffused, T-1, 3mm,;
| 型号： | TLLR4400 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Single Color LED, High Efficiency Red, Tinted Diffused, T-1, 3mm, |
| 文件： | 总7页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLL.440.
TELEFUNKEN Semiconductors
Low Current LED in ø 3 mm Tinted Diffused Package
Color
Type
Technology
GaAsP on GaP
Angle of Half Intensity
±
High efficiency red
Yellow
TLLR440.
TLLY440.
TLLG440.
25
GaAsP on GaP
GaP on GaP
Green
94 8488
Features
Low power consumption
High brightness
CMOS/MOS compatible
Specified at I = 2 mA
F
Luminous intensity categorized
Yellow and green color categorized
Applications
Low power DC circuits
Rev. A1: 01.06.1995
1 (7)
TLL.440.
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLLR440. ,TLLY440. ,TLLG440.
Parameter
Reverse voltage
Test Conditions
Type
Symbol
Value
6
Unit
V
V
R
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
I
7
0.15
20
mA
A
mW
C
C
C
F
t ≤ 10 s
I
FSM
P
T
p
T
amb
≤ 84 C
V
100
j
T
amb
–40 to +100
–55 to +100
260
T
stg
t ≤ 5 s, 2 mm
T
sd
C
from body
Thermal resistance junction/ambient
R
thJA
800
K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
High efficiency red (TLLR440. )
Parameter
Luminous intensity
Test Conditions
I = 2 mA, I /I ≥ 0.5
Type
TLLR4400
TLLR4401
Symbol Min
Typ
1.2
2
Max
625
2.4
Unit
I
I
0.63
1
612
mcd
mcd
nm
nm
deg
V
F
Vmin Vmax
V
V
d
Dominant wavelength I = 2 mA
Peak wavelength
Angle of half intensity I = 2 mA
Forward voltage
Reverse voltage
F
I = 2 mA
F
635
±25
1.9
20
p
ϕ
F
I = 2 mA
V
F
F
I = 10 A
R
V
R
6
V
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
Yellow (TLLY440. )
Parameter
Luminous intensity
Test Conditions
I = 2 mA, I /I ≥ 0.5
Type
TLLY4400
TLLY4401
Symbol Min
Typ
1.2
2
Max
594
2.9
Unit
mcd
mcd
nm
nm
deg
V
I
I
0.63
1
581
F
Vmin Vmax
V
V
d
Dominant wavelength I = 2 mA
Peak wavelength
Angle of half intensity I = 2 mA
Forward voltage
Reverse voltage
F
I = 2 mA
F
585
±25
2.4
20
p
ϕ
F
I = 2 mA
V
F
F
I = 10 A
R
V
R
6
V
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
2 (7)
Rev. A1: 01.06.1995
TLL.440.
TELEFUNKEN Semiconductors
Green (TLLG440. )
Parameter
Luminous intensity
Test Conditions
I = 2 mA, I /I ≥ 0.5
Type
TLLG4400
TLLG4401
Symbol Min
Typ
1.2
2
Max
575
2.4
Unit
mcd
mcd
nm
nm
deg
V
I
I
0.63
1
562
F
Vmin Vmax
V
V
d
Dominant wavelength I = 2 mA
Peak wavelength
Angle of half intensity I = 2 mA
Forward voltage
Reverse voltage
F
I = 2 mA
F
565
±25
1.9
20
p
ϕ
F
I = 2 mA
V
F
F
I = 10 A
R
V
R
6
V
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
0°
10
°
20
°
25
30°
40°
20
1.0
15
0.9
50°
60°
10
0.8
5
70°
80°
0.7
0
100
0.6
0
20
40
60
80
0.6
0.4
0.2
0
0.2
0.4
95 10048
T
amb
– Ambient Temperature ( °C )
95 10060
Figure 1. Power Dissipation vs. Ambient Temperature
10
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
100
High Efficiency Red
10
8
6
4
2
0
1
t /T=0.001
t =10 s
p
p
0.1
100
5
0
20
40
60
80
0
1
2
3
4
95 10049
T
amb
– Ambient Temperature ( °C )
95 10050
V – Forward Voltage ( V )
F
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
Rev. A1: 01.06.1995
3 (7)
TLL.440.
TELEFUNKEN Semiconductors
2.0
1.2
1.0
0.8
0.6
0.4
0.2
0
High Efficiency Red
High Efficiency Red
1.6
1.2
0.8
0.4
0
I =2mA
F
100
690
0
20
40
60
80
590
610
630
650
670
95 10051
T
amb
– Ambient Temperature ( °C )
95 10040
– Wavelength ( nm )
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 8. Relative Luminous Intensity vs. Wavelength
100
2.4
High Efficiency Red
2.0
Yellow
10
1.6
1.2
0.8
0.4
0
1
t /T=0.001
p
t =10 s
p
0.1
5
I (mA)
10
1
20
50
100 200
0.05
500
0
1
2
3
4
F
96 11490
95 10053
V – Forward Voltage ( V )
F
t /T
p
0.5
0.2 0.1
0.02
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
Figure 9. Forward Current vs. Forward Voltage
2.0
Yellow
High Efficiency Red
10
1.6
1.2
1
0.1
0.8
0.4
0
0.01
100
100
0.1
1
10
0
20
40
60
80
95 10061
I
– Forward Current ( mA )
95 10054
T
amb
– Ambient Temperature ( °C )
F
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Rev. A1: 01.06.1995
4 (7)
TLL.440.
TELEFUNKEN Semiconductors
2.4
100
10
1
Yellow
2.0
Green
1.6
1.2
0.8
0.4
0
t /T=0.001
p
t =10 s
p
0.1
5
I (mA)
10
1
20
50
100 200
0.05
500
0
1
2
3
4
F
9611590
95 10056
V – Forward Voltage ( V )
F
t /T
p
0.5
0.2 0.1
0.02
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
Figure 14. Forward Current vs. Forward Voltage
1.6
Green
Yellow
10
1.2
0.8
0.4
1
0.1
I =2mA
F
0.01
0
100
100
0.1
1
10
0
20
40
60
80
95 10062
I
F
– Forward Current ( mA )
95 10057
T
amb
– Ambient Temperature ( °C )
Figure 12. Relative Luminous Intensity vs. Forward Current
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
Green
2.0
Yellow
1.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
0
0
650
I (mA)
550
570
590
610
630
10
1
20
50
100 200
0.05
500
F
95 10039
– Wavelength ( nm )
96 11591
t /T
p
0.5
0.2 0.1
0.02
Figure 13. Relative Luminous Intensity vs. Wavelength
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Rev. A1: 01.06.1995
5 (7)
TLL.440.
TELEFUNKEN Semiconductors
100
1.2
1.0
0.8
0.6
0.4
0.2
0
Green
Green
10
1
0.1
0.01
100
620
0.1
1
10
520
540
560
580
600
95 10059
I
– Forward Current ( mA )
95 10038
– Wavelength ( nm )
F
Figure 17. Relative Luminous Intensity vs. Forward Current
Figure 18. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 10913
6 (7)
Rev. A1: 01.06.1995
TLL.440.
TELEFUNKEN Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. A1: 01.06.1995
7 (7)
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