TLRH4400 [TEMIC]
Single Color LED, High Efficiency Red, Tinted Diffused, T-1, 3mm,;
| 型号： | TLRH4400 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Single Color LED, High Efficiency Red, Tinted Diffused, T-1, 3mm, 功效 光电 |
| 文件： | 总10页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLR.440.
TELEFUNKEN Semiconductors
Resistor LED for 12 V Supply Voltage
Color
Type
Technology
GaAsP on GaP
Angle of Half Intensity
±
High efficiency red
Soft orange
Yellow
TLRH4400
TLRO4400
TLRY4400
TLRG4400
TLRP4400
GaAsP on GaP
GaAsP on GaP
GaP on GaP
30
Green
Pure green
GaP on GaP
94 8488
Description
These devices are developed for the automotive industry
and other industries which use 12 V sources.
The TLR.440. series contains an integrated resistor for
current limiting in series with the LED chip. This allows
the lamp to be driven from a 12 V source without an exter-
nal current limiter.
Available colors are red, soft orange, yellow, green and
pure green. The luminous intensity of such an LED is
measured at constant voltage of 12 V.
These tinted diffused lamps provide a wide off-axis view-
ing angle.
These LEDs are intended for space critical applications
such as automobile instrument panels, switches and oth-
ers which are driven from a 12 V source.
Features
With current limiting resistor for 12 V
Cost effective: save space and resistor cost
Standard ø 3 mm (T-1) package
Wide viewing angle
Choice of five bright colors
Luminous intensity categorized
Yellow and green color categorized
Luminous intensity and color are measured at 12 V
Applications
Status light in cars and other applications with a 12 V source
OFF / ON indicator in cars and other applications with a 12 V source
Background illumination for switches
Off/On indicator in switches
Rev. A1: 01.06.1995
1 (10)
TLR.440.
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLRH4400 ,TLRO4400 ,TLRY4400 ,TLRG4400 ,TLRP4400
Parameter
Reverse voltage
Forward voltage
Test Conditions
Type
Symbol
Value
6
16
240
100
Unit
V
V
mW
C
C
V
R
T
≤ 65 C
≤ 65 C
V
F
amb
Power dissipation
T
amb
P
V
Junction temperature
Storage temperature range
Soldering temperature
T
j
T
–55 to +100
260
stg
t ≤ 5 s, 2 mm
T
sd
C
from body
Thermal resistance junction/ambient
R
thJA
150
K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
High efficiency red (TLRH4400 )
Parameter
Luminous intensity
Dominant wavelength V = 12 V
Peak wavelength
Angle of half intensity V = 12 V
Forward current
Breakdown voltage
Junction capacitance
Test Conditions
V = 12 V
Type
Symbol Min
Typ
4
Max
625
Unit
I
1.6
612
mcd
nm
nm
deg
mA
V
F
V
d
F
V = 12 V
F
635
±30
10
20
50
p
ϕ
F
V = 12 V
I
12
S
F
I = 10 A
V
BR
6
R
V = 0, f = 1 MHz
R
C
j
pF
Soft orange (TLRO4400 )
Parameter
Luminous intensity
Dominant wavelength V = 12 V
Peak wavelength
Angle of half intensity V = 12 V
Forward current
Breakdown voltage
Junction capacitance
Test Conditions
V = 12 V
Type
Symbol Min
Typ
10
Max
611
Unit
mcd
nm
nm
deg
mA
V
I
4
598
F
V
d
F
V = 12 V
F
605
±30
10
20
50
p
ϕ
F
V = 12 V
I
12
S
F
I = 10 A
V
BR
6
R
V = 0, f = 1 MHz
R
C
j
pF
2 (10)
Rev. A1: 01.06.1995
TLR.440.
TELEFUNKEN Semiconductors
Yellow (TLRY4400 )
Parameter
Luminous intensity
Dominant wavelength V = 12 V
Peak wavelength
Angle of half intensity V = 12 V
Forward current
Breakdown voltage
Junction capacitance
Test Conditions
V = 12 V
Type
Symbol Min
Typ
4
Max
594
Unit
mcd
nm
nm
deg
mA
V
I
1.6
581
F
V
d
F
V = 12 V
F
585
±30
10
20
50
p
ϕ
F
V = 12 V
I
12
S
F
I = 10 A
V
BR
6
R
V = 0, f = 1 MHz
R
C
j
pF
Green (TLRG4400 )
Parameter
Luminous intensity
Dominant wavelength V = 12 V
Peak wavelength
Angle of half intensity V = 12 V
Forward current
Breakdown voltage
Junction capacitance
Test Conditions
V = 12 V
Type
Symbol Min
Typ
4
Max
575
Unit
mcd
nm
nm
deg
mA
V
I
1.6
562
F
V
d
F
V = 12 V
F
565
±30
10
20
50
p
ϕ
F
V = 12 V
I
12
S
F
I = 10 A
V
BR
6
R
V = 0, f = 1 MHz
R
C
j
pF
Pure green (TLRP4400 )
Parameter
Test Conditions
V = 12 V
Type
Symbol Min
Typ
3
4
Max
Unit
mcd
mcd
mcd
nm
Luminous intensity
Luminous intensity
Luminous intensity
TLRP4400
TLRP4401
TLRP4406
I
I
I
0.63
1.6
1.6
F
V
V
V
d
V = 12 V
F
V = 12 V
F
5
565
Dominant wavelength V = 12 V
555
F
Peak wavelength
Angle of half intensity V = 12 V
Forward current
Breakdown voltage
Junction capacitance
V = 12 V
555
±30
10
20
50
nm
F
p
ϕ
deg
mA
V
F
V = 12 V
I
V
12
S
F
I = 10 A
6
R
BR
V = 0, f = 1 MHz
R
C
j
pF
Rev. A1: 01.06.1995
3 (10)
TLR.440.
TELEFUNKEN Semiconductors
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
20
18
16
14
12
10
8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
High Efficiency Red
High Efficiency Red
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16
– Forward Voltage ( V )
F
95 11434
V
– Forward Voltage ( V )
95 11456
V
F
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Relative Luminous Intensity vs. Forward Voltage
1.5
1.6
V
= 12 V
High Efficiency Red
S
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
High Efficiency Red
V = 12 V
S
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
95 11435
T
amb
– Ambient Temperature ( °C )
95 11437
T
amb
Figure 2. Relative Forward Current vs. Ambient Temperature
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
1.2
1.5
I
F
= 10 mA
High Efficiency Red
High Efficiency Red
1.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.8
0.6
0.4
0.2
0
690
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
590
610
630
650
670
95 11436
T
amb
– Ambient Temperature ( °C )
95 10040
– Wavelength ( nm )
Figure 3. Relative Forward Voltage vs. Ambient Temperature
4 (10)
Figure 6. Relative Luminous Intensity vs. Wavelength
Rev. A1: 01.06.1995
TLR.440.
TELEFUNKEN Semiconductors
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Soft Orange
18
Soft Orange
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16
95 10834
V
– Forward Voltage ( V )
95 10837
V
– Forward Voltage ( V )
F
F
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Relative Luminous Intensity vs. Forward Voltage
1.5
1.6
Soft Orange
V
= 12 V
Soft Orange
V = 12 V
S
S
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
95 10835
T
amb
– Ambient Temperature ( °C )
95 10838
T
amb
Figure 8. Relative Forward Current vs. Ambient Temperature
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
1.2
1.5
Soft Orange
I
= 10 mA
Soft Orange
1.0
F
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.8
0.6
0.4
0.2
0
670
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
570
590
610
630
650
95 10836
T
amb
– Ambient Temperature ( °C )
95 10324
– Wavelength ( nm )
Figure 9. Relative Forward Voltage vs. Ambient Temperature
Rev. A1: 01.06.1995
Figure 12. Relative Luminous Intensity vs. Wavelength
5 (10)
TLR.440.
TELEFUNKEN Semiconductors
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Yellow
18
Yellow
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16
– Forward Voltage ( V )
F
95 11438
V
– Forward Voltage ( V )
95 11458
V
F
Figure 13. Forward Current vs. Forward Voltage
Figure 16. Relative Luminous Intensity vs. Forward Voltage
1.5
1.6
Yellow
V = 12 V
S
Yellow
V = 12 V
S
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
95 11439
T
amb
– Ambient Temperature ( °C )
95 11440
T
amb
Figure 14. Relative Forward Current vs. Ambient Temperature
Figure 17. Rel. Luminous Intensity vs. Ambient Temperature
1.2
1.5
Yellow
I = 10 mA
F
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Yellow
1.0
0.8
0.6
0.4
0.2
0
650
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
550
570
590
610
630
95 11457
T
amb
– Ambient Temperature ( °C )
95 10039
– Wavelength ( nm )
Figure 15. Relative Forward Voltage vs. Ambient Temperature
Figure 18. Relative Luminous Intensity vs. Wavelength
6 (10)
Rev. A1: 01.06.1995
TLR.440.
TELEFUNKEN Semiconductors
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Green
Green
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16
95 11441
V
– Forward Voltage ( V )
95 11444
V
– Forward Voltage ( V )
F
F
Figure 19. Forward Current vs. Forward Voltage
Figure 22. Relative Luminous Intensity vs. Forward Voltage
1.5
1.6
Green
V = 12 V
S
Green
V = 12 V
S
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
95 11442
T
amb
– Ambient Temperature ( °C )
95 11445
T
amb
Figure 20. Relative Forward Current vs. Ambient Temperature
Figure 23. Rel. Luminous Intensity vs. Ambient Temperature
1.2
1.5
Green
I = 10 mA
F
Green
1.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.8
0.6
0.4
0.2
0
620
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
520
540
560
580
600
95 11443
T
amb
– Ambient Temperature ( °C )
95 10038
– Wavelength ( nm )
Figure 21. Relative Forward Voltage vs. Ambient Temperature
Rev. A1: 01.06.1995
Figure 24. Relative Luminous Intensity vs. Wavelength
7 (10)
TLR.440.
TELEFUNKEN Semiconductors
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Pure Green
18
Pure Green
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16
– Forward Voltage ( V )
F
95 11465
V
– Forward Voltage ( V )
95 11468
V
F
Figure 25. Forward Current vs. Forward Voltage
Figure 28. Relative Luminous Intensity vs. Forward Voltage
1.5
1.6
Pure Green
V
= 12 V
Pure Green
V = 12 V
S
S
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
95 11466
T
amb
– Ambient Temperature ( °C )
95 11446
T
amb
Figure 26. Relative Forward Current vs. Ambient Temperature
Figure 29. Rel. Luminous Intensity vs. Ambient Temperature
1.2
1.5
I
F
= 10 mA
Pure Green
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Pure Green
1.0
0.8
0.6
0.4
0.2
0
600
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
500
520
540
560
580
95 11467
T
amb
– Ambient Temperature ( °C )
95 10325
– Wavelength ( nm )
Figure 27. Relative Forward Voltage vs. Ambient Temperature
Figure 30. Relative Luminous Intensity vs. Wavelength
8 (10)
Rev. A1: 01.06.1995
TLR.440.
TELEFUNKEN Semiconductors
0°
10
°
20
°
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
0.6
0.6
0.4
0.2
0
0.2
0.4
95 10042
Figure 31. Rel. Luminous Intensity vs. Angular Displacement
Dimensions in mm
95 10913
Rev. A1: 01.06.1995
9 (10)
TLR.440.
TELEFUNKEN Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
10 (10)
Rev. A1: 01.06.1995
相关型号：
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