TLUR2401 [TEMIC]
Single Color LED, Red, Tinted Diffused, 1.8mm,;
| 型号： | TLUR2401 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Single Color LED, Red, Tinted Diffused, 1.8mm, |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLU.240.
TELEFUNKEN Semiconductors
Universal LED, ø 1.8 mm Tinted Diffused Miniplast Package
Color
Type
Technology
GaAsP on GaAs
Angle of Half Intensity
±
Red
TLUR240.
TLUO240.
TLUY240.
TLUG240.
Orange red
Yellow
Green
GaAsP on GaP
GaAsP on GaP
GaP on GaP
20
Features
Four colors
For DC and pulse operation
Luminous intensity categorized
End-to-end stackable in centre-to-centre spacing of
0.1” (2.54 mm)
Applications
94 8639
General indicating and lighting purposes
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLUR240. ,TLUO240. ,TLUY240. ,TLUG240.
Parameter Test Conditions
Reverse voltage
Type
Symbol
Value
6
Unit
V
V
R
DC forward current
TLUR240.
TLUO240.
TLUY240.
TLUG240.
I
I
I
I
50
30
30
30
1
mA
mA
mA
mA
A
mW
C
C
F
F
F
F
Surge forward current
Power dissipation
Junction temperature
Storage temperature range
Soldering temperature
t ≤ 10 s
I
FSM
P
T
p
T
amb
≤ 55 C
100
100
–55 to +100
260
V
j
T
stg
t ≤ 3 s, 2 mm from body
t ≤ 5 s, 4 mm from body
T
C
C
sd
T
sd
260
Thermal resistance
junction/ambient
R
thJA
450
K/W
Rev. A1: 01.06.1995
1 (8)
TLU.240.
TELEFUNKEN Semiconductors
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Red (TLUR240. )
Parameter
Luminous intensity
Test Conditions
I = 10 mA, I /I
Type
TLUR2400
TLUR2401
Symbol Min
Typ
0.8
1.5
645
660
±20
1.6
15
Max
5
Unit
mcd
mcd
nm
nm
deg
V
≥ 0.5
≥ 0.5
≥ 0.5
≥ 0.5
I
I
0.4
1
F
Vmin Vmax
V
V
d
Dominant wavelength I = 10 mA
Peak wavelength
Angle of half intensity I = 10 mA
Forward voltage
Reverse voltage
F
I = 10 mA
F
p
ϕ
F
I = 20 mA
V
F
2
F
I = 10 A
V
R
6
V
pF
R
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
Orange red (TLUO240. )
Parameter
Luminous intensity
Test Conditions
I = 10 mA, I /I
Type
TLUO2400
TLUO2401
Symbol Min
Typ
2
5
Max
Unit
mcd
mcd
nm
nm
deg
V
I
I
1.6
4
612
F
Vmin Vmax
V
V
d
20
625
Dominant wavelength I = 10 mA
Peak wavelength
Angle of half intensity I = 10 mA
Forward voltage
Reverse voltage
F
I = 10 mA
F
630
±20
2
15
50
p
ϕ
F
I = 20 mA
V
F
3
F
I = 10 A
V
R
6
V
pF
R
Junction capacitance
V = 0, f = 1 MHz
R
C
j
Yellow (TLUY240. )
Parameter
Luminous intensity
Test Conditions
I = 10 mA, I /I
Type
TLUY2400
TLUY2401
Symbol Min
Typ
4
8
Max
Unit
mcd
mcd
nm
nm
deg
V
I
I
1
2.5
581
F
Vmin Vmax
V
V
d
12.5
594
Dominant wavelength I = 10 mA
Peak wavelength
Angle of half intensity I = 10 mA
Forward voltage
Reverse voltage
F
I = 10 mA
F
585
±20
2.4
15
p
ϕ
F
I = 20 mA
V
F
3
F
I = 10 A
V
R
6
V
pF
R
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
Green (TLUG240. )
Parameter
Luminous intensity
Test Conditions
I = 10 mA, I /I
Type
TLUG2400
TLUG2401
Symbol Min
Typ
5
12
Max
Unit
mcd
mcd
nm
nm
deg
V
I
I
1.6
4
562
F
Vmin Vmax
V
V
d
20
575
Dominant wavelength I = 10 mA
Peak wavelength
Angle of half intensity I = 10 mA
Forward voltage
Reverse voltage
F
I = 10 mA
F
565
±20
2.4
15
p
ϕ
F
I = 20 mA
V
F
3
F
I = 10 A
R
V
R
6
V
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
2 (8)
Rev. A1: 01.06.1995
TLU.240.
TELEFUNKEN Semiconductors
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
125
100
75
10000
1000
100
10
0.02
0.05
t /T=0.01
p
0.1
0.2
0.5
50
25
0
1
Green, Yellow
Orange-Red
T
amb
55°C
10
1
100
100
0
20
40
60
80
0.01
0.1
1
95 9983
T
amb
– Ambient Temperature ( °C )
95 10093
t – Pulse Length ( ms )
p
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Pulse Length
0°
10
°
20
°
60
30°
40°
Red
50
40
1.0
30
0.9
0.8
50°
60°
Green, Yellow
Orange-Red
20
70°
80°
10
0
0.7
100
0.6
0
20
40
60
80
0.6
0.4
0.2
0
0.2
0.4
95 10091
T
amb
– Ambient Temperature ( °C )
95 10094
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Rel. Luminous Intensity vs. Angular Displacement
10000
1000
Red
100
0.02
0.05
Red
t /T=0.01
p
1000
100
10
0.1
0.2
0.5
10
1
1
t /T=0.001
t =10 s
p
p
T
amb
55°C
1
0.1
100
3
0.01
0.1
1
10
1
1.5
2
2.5
95 10092
t – Pulse Length ( ms )
p
95 10073
V – Forward Voltage ( V )
F
Figure 3. Forward Current vs. Pulse Length
Figure 6. Forward Current vs. Forward Voltage
Rev. A1: 01.06.1995
3 (8)
TLU.240.
TELEFUNKEN Semiconductors
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0
Red
Red
1.2
0.8
0.4
I =10mA
F
0
100
720
0
20
40
60
80
620
640
660
680
700
95 10074
T
amb
– Ambient Temperature ( °C )
95 10077
– Wavelength ( nm )
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
Figure 10. Relative Luminous Intensity vs. Wavelength
2.4
1000
Red
2.0
Orange-Red
100
10
1
1.6
1.2
0.8
0.4
t /T=0.001
t =10 s
p
p
I
=10mA, const.
FAV
0
0.1
10
I (mA)
10
1
20
0.5
50
100 200
0.05
500
0
2
4
6
8
F
95 10075
95 10086
V – Forward Voltage ( V )
F
t /T
p
0.2 0.1
0.02
Figure 8. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Figure 11. Forward Current vs. Forward Voltage
1.6
Orange-Red
Red
1.2
0.8
0.4
1
0.1
I =10mA
F
0.01
0
100
100
1
10
0
20
40
60
80
95 10076
I
– Forward Current ( mA )
95 10087
T
amb
– Ambient Temperature ( °C )
F
Figure 9. Relative Luminous Intensity vs. Forward Current
Figure 12. Rel. Luminous Intensity vs. Ambient Temperature
Rev. A1: 01.06.1995
4 (8)
TLU.240.
TELEFUNKEN Semiconductors
2.4
1000
100
10
Orange-Red
2.0
Yellow
1.6
1.2
0.8
0.4
t /T=0.001
p
t =10 s
p
1
I
=10mA, const.
FAV
0
0.1
10
I (mA)
10
1
20
0.5
50
100 200
0.05
500
0
2
4
6
8
F
95 10088
95 10030
V – Forward Voltage ( V )
F
t /T
p
0.2 0.1
0.02
Figure 13. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Figure 16. Forward Current vs. Forward Voltage
1.6
Yellow
Orange-Red
1
1.2
0.8
0.4
0.1
I =10mA
F
0.01
0
100
100
1
10
0
20
40
60
80
95 10089
I
– Forward Current ( mA )
95 10031
T
amb
– Ambient Temperature ( °C )
F
Figure 14. Relative Luminous Intensity vs. Forward Current
Figure 17. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
Orange-Red
1.0
Yellow
2.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
0
0
690
I (mA)
590
610
630
650
670
10
1
20
50
100 200
0.05
500
F
95 10090
– Wavelength ( nm )
95 10260
t /T
p
0.5
0.2 0.1
0.02
Figure 15. Relative Luminous Intensity vs. Wavelength
Figure 18. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Rev. A1: 01.06.1995
5 (8)
TLU.240.
TELEFUNKEN Semiconductors
10
1.6
1.2
0.8
0.4
0
Green
Yellow
1
0.1
I =10mA
F
0.01
1
100
100
10
– Forward Current ( mA )
0
20
40
60
80
95 10033
I
95 10035
T
amb
– Ambient Temperature ( °C )
F
Figure 19. Relative Luminous Intensity vs. Forward Current
Figure 22. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
Green
2.0
Yellow
1.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
0
0
650
I (mA)
550
570
590
610
630
10
1
20
50
100 200
0.05
500
F
95 10039
– Wavelength ( nm )
95 10263
t /T
p
0.5
0.2 0.1
0.02
Figure 20. Relative Luminous Intensity vs. Wavelength
1000
Figure 23. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Green
100
Green
1
10
t /T=0.001
t =10 s
p
p
0.1
1
0.1
0.01
10
100
0
2
4
6
8
1
10
95 10034
V
– Forward Voltage ( V )
95 10037
I
– Forward Current ( mA )
F
F
Figure 21. Forward Current vs. Forward Voltage
Figure 24. Relative Luminous Intensity vs. Forward Current
Rev. A1: 01.06.1995
6 (8)
TLU.240.
TELEFUNKEN Semiconductors
1.2
Green
1.0
0.8
0.6
0.4
0.2
0
620
520
540
560
580
600
95 10038
– Wavelength ( nm )
Figure 25. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 11262
Rev. A1: 01.06.1995
7 (8)
TLU.240.
TELEFUNKEN Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
8 (8)
Rev. A1: 01.06.1995
相关型号：
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