U2795B [TEMIC]

2.5-GHz Double Balanced Mixer; 2.5 GHz的双平衡混频器
U2795B
型号: U2795B
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

2.5-GHz Double Balanced Mixer
2.5 GHz的双平衡混频器

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U2795B  
TELEFUNKEN Semiconductors  
2.5-GHz Double Balanced Mixer  
Description  
U2795B is a 2.5-GHz mixer for WLAN and RF telecom- isolation characteristics and a minimum of spurious  
munications equipment, e.g., DECT and PCN, built with products. The input and output are single ended, and their  
TELEFUNKEN’s advanced bipolar technology.  
A
characteristics are programmable. No output transformer  
double balanced approach was chosen to assure good or balun is required.  
Features  
Benefits  
Reduced system costs due to few external component  
(no balun) requirements  
Supply voltage range: 2.7 to 5.5 V  
Single-ended output, no balun required  
Single-ended input for RF and LO  
Exellent isolation characteristics  
Power down mode  
Standard independent product  
3-V operation reduces the battery count and saves  
space  
IP3 and compression point programmable  
2.5-GHz operating frequency  
SO-8 package  
Block Diagram  
V
S
2
R
2
IF  
o
RF  
i
5
3
S
o
P
4
V
R
1
R
V
H
V
PD  
8
Voltage  
regulator  
H
93 7811 e  
LO  
7
1
V
i
GND  
6
S
Rev. A2: 08.06.1995  
1 (13)  
U2795B  
TELEFUNKEN Semiconductors  
Pin Description  
Pin  
1
2
3
4
5
6
7
8
Symbol  
Function  
Supply voltage  
RF input  
Progamming port IP3, CP  
Output symmetry  
IF output  
Ground  
LO input  
Power down  
PD  
LO  
1
2
3
4
V
8
7
6
5
V
S
S
RF  
P
i
RF  
P
i
I
S
O
IF  
O
GND  
GND  
LO  
i
S
IF  
O
O
PD  
94 7890 e  
Functional Description  
Supply Voltage  
Current Consumption, IS  
Depending on the chosen input and output conditions of  
The IC is designed for a supply voltage of 2.7 to 5.5 V. As  
the IC is internally stabilized, the performance of the  
circuit is nearly independent of the supply voltage.  
the IC, the current consumption, I is between 4 mA and  
S,  
10 mA. The current consumption in dependence of Rp is  
shown in figure 4.  
Input Impedance  
Power Down  
Input impedance, Z , is about 700 with an additional  
capacitive component. This condition provides the best  
noise figure in combination with a matching network.  
RFi  
This feature provides an extension of battery life. If this  
function is not used, Pin 8 has to be connected to V  
(Pin 1).  
S
3. Order Intercept Point (IP3)  
Output Symmetry  
The symmetry of the load current can be matched and so  
be optimized for a given load impedance.  
Voltage divider, R / R determinates both the input and  
P
1,  
output intercept point, IIP3 and OIP3. If R is infinity the  
P
IIP3 has the maximum of about 4 dBm.  
The IP3/R characteristics are shown in figure 1 and 2.  
P
Output Impedance and Intercept Point  
Output impedance is shown in figure 9.  
Both low output impedance and a high intercept point are  
with reference to a high value of R .  
P
2 (13)  
Rev. A2: 08.06.1995  
U2795B  
TELEFUNKEN Semiconductors  
Absolute Maximum Ratings  
Parameters  
Symbol  
V
S
Value  
6
Unit  
V
Supply voltage  
Pin 1  
Input voltage  
Junction temperature  
Storage temperature range  
Pins 2, 3, 7 and 8  
V
T
T
stg  
0 to V  
125  
40 to +125  
V
°C  
°C  
I
j
S
Thermal Resistance  
Parameters  
Symbol  
R
thja  
Value  
175  
Unit  
K/W  
Junction ambient  
SO 8  
Pin 1  
Operating Range  
Parameters  
Symbol  
Value  
2.7 to 5.5  
40 to +85  
Unit  
V
°C  
Supply voltage range  
V
S
Ambient temperature range  
T
amb  
Rev. A2: 08.06.1995  
3 (13)  
U2795B  
TELEFUNKEN Semiconductors  
Electrical Characteristics  
V = 3 V, f = 1 GHz, IF = 900 MHz, RF = 100 MHz, R = , system impedance Zo = 50 , T = 25 C, R = 56  
S
LOi  
P
amb  
T
reference point Pin 6, unless otherwise specified  
Parameters  
Supply voltage range  
Typical supply current  
Test Conditions / Pin  
Pin 1  
Pin 1  
Symbol  
V
S
Min.  
2.7  
4
Typ.  
Max.  
5.5  
11  
Unit  
V
mA  
I
S
1
range  
Maximum supply current Pin 1  
I
13  
mA  
S
Conversion power gain  
R = 50 , R =  
PG  
PG  
9
4
dB  
dB  
L
T
C
C
R = 50 , R = 56  
L
T
Operating frequencies  
RF frequency  
Pin 2  
Pin 7  
Pin 5  
RF  
f
LOi  
10  
50  
50  
2500  
2500  
2500  
MHz  
MHz  
MHz  
i
i
LO frequency  
i
IF frequency  
o
f
IFo  
Isolation  
LO spurious at R  
Pin 7 to 2  
Fi  
P
= –10 to 0 dBm  
IS  
IS  
30  
35  
dBm  
dB  
iLO  
LO-RF  
RF-LO  
RF to LO  
Pin 2 to 7  
= –25 dBm  
i
i
P
iRF  
LO spurious at IF  
Pin 7 to 5,  
= 10 to 0 dBm  
Pin 5 to 7  
IS  
IS  
25  
30  
dBm  
dB  
o
LO-IF  
IF-LO  
P
iLO  
IF to LO  
o
i
Output (IF)  
Output compression point Pin 5  
CP  
10  
dBm  
o
Input (RF)  
Input impedance  
Input compression point  
Third order input  
intercept point  
Pin 2  
Pin 2  
Pin 2  
Z
CP  
IIP3  
700 0.8pF  
RFi  
14  
–4  
dBm  
dBm  
i
Input (LO)  
LO level  
Pin 7  
P
iLO  
–6  
dBm  
Voltage standing wave ratio (VSWR)  
Input LO  
Output IF  
Pin 7  
Pin 4  
VSWR  
VSWR  
<2  
<2  
LOi  
IFo  
Noise performance  
Noise figure  
Power down mode  
Supply current  
P
= 0 dBm, R =  
NF  
10  
dB  
A
iLO  
T
Pin 1 V < 0.5 V  
I
30  
PD  
SPD  
Pin 1 V = 0 V  
<5  
PD  
Power down voltage  
“Power ON”  
Pin 8 V = 3.5 to 5.5 V  
V
S
0.5  
V +0.5  
V
V
V
S
S
V = 2.7 to 3.5 V  
V
V
V
S
V +0.5  
S
PON  
S
“Power DOWN”  
Pin 8  
1
PDN  
Power down current  
Pin 8 Power ON  
I
I
0.15  
< 5  
mA  
A
PON  
PDN  
Power DOWN  
Settling time  
Pin 8 to 5  
t
<30  
s
sPD  
Note 1:  
Depending on R  
P
4 (13)  
Rev. A2: 08.06.1995  
U2795B  
TELEFUNKEN Semiconductors  
–4  
–5  
3
–1  
–6  
–7  
–5  
–8  
–9  
–9  
–13  
–10  
100  
100  
0
20  
40  
R ( k  
60  
)
80  
0
20  
40  
R ( k  
60  
)
80  
94 9237  
94 9235  
p
p
Figure 3. Gain versus resistor Rp, LO: 1030 MHz,  
level –10 dBm; RF: 130 MHz, –30 dBm, RT = 56  
Figure 1. IIP3 versus resistor Rp, IF: 900 MHz  
0
–5  
12  
10  
8
–10  
6
–15  
–20  
–25  
4
2
0
100  
0
20  
40  
R ( k  
60  
)
80  
100  
0
20  
40  
R ( k  
60  
)
80  
94 9236  
p
94 9238  
p
Figure 2. OIP3 versus resistor Rp, IF: 900 MHz  
Figure 4. Supply current IS versus resistor Rp  
Rev. A2: 08.06.1995  
5 (13)  
U2795B  
TELEFUNKEN Semiconductors  
18  
14  
12  
10  
8
with RF input matching:  
L =220nH, C =4.7pF  
s
p
without R  
T
10  
6
6
2
4
2
with R =56  
T
–2  
0
2500  
0
500  
1000  
1500  
2000  
0
200  
400  
600  
800  
94 9239  
IF ( MHz )  
94 9241  
IF ( MHz )  
Figure 5. Gain versus IF output frequency,  
LO level: –6 dBm, RF: 130 MHz, –35 dBm;  
parameter: RF input termination  
Figure 7. Double sideband noise figure versus IF output  
frequency; LO: 1000 MHz, level 0 dBm; no RF input matching,  
RT left out  
0
5
4
3
2
1
–2  
with R = 56  
T
–4  
–6  
–8  
without R  
T
–10  
–12  
–14  
–16  
–18  
with RF input matching:  
L = 220 nH, C = 4.7 pF  
s
p
0
500  
1000  
1500  
2000  
2500  
1000  
100  
280  
460  
640  
820  
94 9240  
IF ( MHz )  
95 9652  
IF Frequency ( MHz )  
Figure 6. IIP3 versus IF output frequency,  
LO level: –6 dBm; RF: 130 MHz / 130.1 MHz,  
–35 dBm; parameter: RF input termination  
Figure 8. Typical VSWR frequency response  
of the IF output, RP =  
6 (13)  
Rev. A2: 08.06.1995  
U2795B  
TELEFUNKEN Semiconductors  
j
0.5j  
2j  
0.2j  
5j  
0
0.2  
0.5  
1
2
5
–0.2j  
–5j  
–0.5j  
–2j  
94 9473  
–j  
Figure 9. Typical Impedance of the output versus RP at frequency fIFo = 900 MHz  
markers (from left to right): RP = / 22 k / 10 k / 8.2 k / 5.6 k  
Rev. A2: 08.06.1995  
7 (13)  
U2795B  
TELEFUNKEN Semiconductors  
j
0.5j  
2j  
0.2j  
5j  
0
0.2  
0.5  
1
2
5
–0.2j  
–5j  
–0.5j  
–2j  
95 9651  
–j  
Figure 10. Typical S11 frequency response of the IF output, RP =  
IF frequency from 100 MHz to 1000 MHz, marker: 900 MHz  
,
8 (13)  
Rev. A2: 08.06.1995  
U2795B  
TELEFUNKEN Semiconductors  
j
0.5j  
2j  
0.2j  
5j  
0
0.2  
0.5  
1
2
5
–0.2j  
–5j  
–0.5j  
–2j  
95 9653  
–j  
Figure 11. Typical S11 frequency response of the RF intput, RP = , RT =  
RF frequency from 100 MHz to 1000 MHz, marker: 900 MHz  
Rev. A2: 08.06.1995  
9 (13)  
U2795B  
TELEFUNKEN Semiconductors  
j
0.5j  
2j  
0.2j  
5j  
0
0.2  
0.5  
1
2
5
–0.2j  
–5j  
–0.5j  
–2j  
95 9654  
–j  
Figure 12. Typical S11 frequency response of the LO intput, RP =  
LO frequency from 100 MHz to 1000 MHz, marker: 900 MHz  
,
10 (13)  
Rev. A2: 08.06.1995  
U2795B  
TELEFUNKEN Semiconductors  
Application Circuit (Evaluation Board)  
94 8512  
Application  
94 8511  
C1  
C7  
1
2
3
4
PD  
LO  
V
8
7
6
5
S
R
T
C5  
C4  
C2  
RF  
R
P
C6  
IF  
R
SO  
C3  
R
I
Rev. A2: 08.06.1995  
11 (13)  
U2795B  
TELEFUNKEN Semiconductors  
With the part list values, the PD settling time is 20 s.  
Using other values, time requirements in burst-mode  
appli- cations have to be considered.  
Part List  
C 1  
10 nF  
C2, C3, C4, C5, C6, C7  
100 pF  
*R  
P
Values of R and R depending on the input and output  
SO  
P
condition requirements. For R 68 is recommended.  
50- Microstrip  
SO  
*R  
68  
SO  
With the optional R the intercept and compression point  
I
optional  
56  
can be slightly increased; values between 500 and 1 k  
are suitable. Please note that such modification will also  
increase the supply current.  
R
T
Application Board  
Ordering Information  
Extended Type Number  
U2795B-FP  
Package  
SO 8  
95 9697  
Dimensions in mm  
Package: SO 8  
94 8862  
12 (13)  
Rev. A2: 08.06.1995  
U2795B  
TELEFUNKEN Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of  
continuous improvements to eliminate the use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain  
such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized  
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,  
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Rev. A2: 08.06.1995  
13 (13)  

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