U3665M [TEMIC]

Baseband Delay Line 64 us (Improved Version); 基带延时线路64我们(改进版)
U3665M
型号: U3665M
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

Baseband Delay Line 64 us (Improved Version)
基带延时线路64我们(改进版)

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U3665M  
Baseband Delay Line 64 s (Improved Version)  
Application  
In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs  
Description  
The integrated delay line circuit U3665M is suitable for A summing circuitry combines the information of  
all chroma decoders with baseband color-difference adjacent TV-lines, thus giving an interpolated sum for the  
outputs. It is suitable for PAL-, SECAM- and PAL-system, storing preceeding lines for the SECAM-  
NTSC-signals as well. The U3665M contains two system and providing a comb-filtered output for  
separate delay lines for processing (R–Y)-output and NTSC-signals. Due to internally generated timing,  
(B–Y)-output separately. The delay is performed by inter- synchronization is easily done by feeding a line-frequent  
nally switched capacitors. On-chip postfiltering avoids impulse (usually the SC-impulse) to the sync-input of  
the need for external filter components. In the case of the the IC.  
U3665M, the postfilter is tuned to Bessel-characteristic.  
Features  
One line delay time, addition of delayed and  
non-delayed output signals  
Line-locked by the sandcastle pulse  
No crosstalk between SECAM color  
carriers (diaphoty)  
Adjustment-free application, VCO without  
external components  
Comb-filtering functions for NTSC color-  
difference signals  
Handles negative or positive color-difference  
input signals  
Clamping of AC-coupled input signals  
Correction of phase errors in the PAL system  
[±(R–Y) and ±(B–Y)]  
V
Ref  
(B–Y)  
(B–Y)  
12  
11  
S+H  
LPF  
14  
Clamping  
+
Line memory  
Shift register  
Line memory  
(R–Y)  
(R–Y)  
S+H  
LPF  
16  
Clamping  
Bias  
+
V
Ref  
3 MHz  
Control  
f
SC  
V
DD2  
V
1
3
DD1  
9
PLL  
SC detector  
Clock generator  
GND1  
GND2  
10  
5
94 8846  
SC pulse  
Figure 1. Block diagram  
TELEFUNKEN Semiconductors  
1 (9)  
Rev. A1, 17-Jul-96  
Preliminary Information  
U3665M  
Ordering Information  
Extended Type Number  
Package  
DIP16  
SO16  
Remarks  
U3665M-MDP  
U3665M-MFP  
Pin Description  
Pin  
1
2
3
4
5
6
7
8
Symbol  
Function  
Supply voltage for digital part  
Not connected  
Ground for digital part  
Not connected  
Sandcastle-pulse input  
Not connected  
V
DD2  
NC  
GND2  
NC  
SC  
NC  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
V
V (R–Y)  
DD2  
i
NC  
NC  
GND2  
NC  
V (B–Y)  
i
NC  
NC  
Not connected  
Not connected  
NC  
9
V
DD1  
Supply voltage for analog part  
Ground for analog part  
±(R–Y) output signal  
±(B–Y) output signal  
Not connected  
±(B–Y) input signal  
Not connected  
±(R–Y) input signal  
10  
11  
12  
13  
14  
15  
16  
GND1  
SC  
12 V (B–Y)  
o
V
o (R–Y)  
V
o (B–Y)  
11  
10  
9
NC  
V (R–Y)  
0
NC  
V
i (B–Y)  
NC  
GND1  
NC  
V
i (R–Y)  
NC  
V
DD1  
95 10649  
Figure 2. Connection diagram  
Absolute Maximum Ratings  
Reference point Pin 3, 10, unless otherwise specified  
Parameters  
Supply voltage (Pin 9)  
Supply voltage (Pin 1)  
Voltage on Pins 5, 11, 12, 14 and 16  
Output current, (Pin 11, Pin 12)  
Power dissipation  
Symbol  
Min.  
–0.5  
–0.5  
–0.5  
Typ.  
Max.  
+7  
+7  
Unit  
V
V
V
DD1  
V
DD2  
V
n
V
S
V
I
20  
1.1  
+150  
500  
mA  
W
°C  
V
out  
P
T
stg  
Storage temperature range  
Electrostatic protection* for input/ output pins  
–25  
* MIL standard 883D, method 3015.7 machine model (all power pins connected together)  
Operating Range  
Parameters  
Supply-voltage range (Pin 1, Pin 9)  
Ambient-temperature range  
Symbol  
Value  
4.5 to 5.5  
–10 to +70  
Unit  
V
s
V
°
T
amb  
C
Thermal Resistance  
Parameters  
Symbol  
R
thJA  
Value  
80  
Unit  
K/W  
Junction ambient  
2 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 17-Jul-96  
Preliminary Information  
U3665M  
Electrical Characteristics  
VDD = 5.0 V, Tamb = 25°C, reference point, Pin 3 and Pin 10 connected together, sandcastle frequency of 15.625 kHz;  
unless otherwise specified  
Parameters  
DC-supply  
Test Conditions / Pins  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Pin 1, 9  
Pin 9  
Pin 1  
Pin 9  
Pin 1  
Supply voltage (analog part)  
Supply voltage (digital part)  
Supply current (analog part)  
Supply current (digital part)  
Power dissipation  
VDD1  
VDD2  
IS1  
IS2  
P
4.5  
4.5  
5.0  
5.0  
3.5  
1
5.5  
5.5  
8.0  
2
V
V
mA  
mA  
mW  
30  
60  
Color -ifference input signals  
Pin 14, 16  
Input signal  
(peak-to-peak value)  
±(R–Y) PAL and NTSC  
Pin 16  
Pin 14  
Pin 16  
Pin 14  
Vi  
Vi  
Vi  
0.525  
0.665  
1.05  
1.0  
1.0  
2.0  
2.0  
40  
V
V
V
V
k
±(B–Y) PAL and NTSC  
±(R–Y) SECAM  
±(B–Y) SECAM  
Input resistance  
Input capacitance  
Input clamping voltage  
Vi  
1.33  
During clamping  
R14, R16  
C14, C16  
V14  
V16  
10  
pF  
V
Non color input level  
during clamping  
1.45  
Color-difference output signals  
Pin 11, 12  
Output signal  
(peak-to-peak value) ±(R–Y) All standards  
Pin 11  
Pin 12  
Vo  
Vo  
V11/V12  
1.05  
1.33  
0
V
V
dB  
±(B–Y)  
All standards  
Ratio of output amplitudes at  
equal input signals  
–0.4  
+0.4  
DC output voltage  
Output resistance  
Gain for PAL and NTSC  
Gain for SECAM  
Ratio of output signals for  
adjacent time samples at  
constant input signals  
Pin 11, 12  
Pin 11, 12  
V11,12  
R11,12  
Gv  
3.0  
V
400  
6.5  
+0.5  
Ratio Vo / Vi  
Ratio Vo / Vi  
5.5  
–0.5  
6.0  
0
±0.1  
dB  
dB  
dB  
Gv  
Vi 14,16 = 1.33Vpp,  
SECAM signals,  
Pin 11 / Pin 12  
V(n)  
/
V(n+1)  
Noise voltage  
(RMS value)  
Vnoise  
1.2  
mV  
Vi 14,16 = 0, Rgen < 300  
f = 10 kHz to 1 MHz  
Pin 11, 12  
Delay of delayed signals  
Delay of non-delayed signals  
Transient time of delayed  
signal  
td  
td  
ttr  
63.94  
64.0  
65  
550  
64.06  
µs  
ns  
ns  
300 ns transient of SECAM  
input signal, Cload = 22 pF  
Pin 11, 12  
Transient time of  
non-delayed signal  
300 ns transient of SECAM  
input signal, Cload = 22 pF  
Pin 11, 12  
ttr  
350  
ns  
Sandcastle-pulse input  
Sandcastle frequency  
Top pulse voltage  
Pin 5  
fSC  
V5  
14.0  
3
15.625  
17.0  
Vs+0.7  
kHz  
V
The leading edge of the burst-  
key pulse is used for timing  
Internal slicing level  
Input current  
Input capacitance  
Vslice  
I5  
C5  
V5–1.5 V5–1.25 V5–1.0  
V
µA  
pF  
10  
10  
TELEFUNKEN Semiconductors  
3 (9)  
Rev. A1, 17-Jul-96  
Preliminary Information  
U3665M  
BGP  
SC-impulse  
H-pulse  
Internal clamping  
0.3 s  
1.6 s  
95 10355  
Figure 3. Timing of internal clamping  
No higher than  
V + 0.7 V  
S
BGP  
1.6 V  
At least 1.6 V  
H
V
95 10226  
Figure 4. Restrictions to SC pulse  
4 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 17-Jul-96  
Preliminary Information  
U3665M  
95 11237  
V11,12  
t
U3661M: internal postfilter with Butterworth characteristic  
V11,12  
t
U3665M: internal postfilter with Bessel characteristic  
Figure 5. Influence of internal postfilters on siganl outputs  
TELEFUNKEN Semiconductors  
Rev. A1, 17-Jul-96  
5 (9)  
Preliminary Information  
U3665M  
+12 V  
560  
10  
10  
47 F  
5V1  
47 F  
22 nF  
22 nF  
NC  
94 8848  
1
9
2,4,6,7,8,13,15  
(R–Y)  
(R–Y)  
(B–Y)  
16  
14  
11  
Chroma  
decoder  
1 nF  
1 nF  
Baseband delay line  
(B–Y)  
12  
10  
3
5
SC pulse  
*)  
*)  
Figure 6. Typical application circuit  
*)Depends on application (5 V - or 12 V SC pulse)  
Baseband  
delay  
line  
Baseband  
delay  
line  
SC-impulse  
5 V  
5
5
SC-impulse  
12 V  
SC in  
SC in  
10 k  
6.8 k  
95 10354  
95 10227  
Figure 7. Application with 12 V SC-pulse  
Figure 8. Application with 5 V SC-pulse  
6 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 17-Jul-96  
Preliminary Information  
U3665M  
Internal Pin Circuits  
14,16  
5
95 10356  
95 10357  
Figure 9. Color-difference signal inputs  
Figure 11. Sandcastle-pulse input  
95 10359  
1,9  
11,12  
95 10358  
Figure 12. Supply voltage VDD2, VDD1  
Figure 10. Color-difference signal outputs  
TELEFUNKEN Semiconductors  
Rev. A1, 17-Jul-96  
7 (9)  
Preliminary Information  
U3665M  
Package Information  
20.0 max  
19.8 max  
Package DIP16  
Dimensions in mm  
7.82  
7.42  
4.8 max  
0.5 min  
6.4 max  
3.3  
0.39 max  
1.64  
1.44  
0.58  
0.48  
9.75  
8.15  
2.54  
17.78  
Alternative  
16  
15  
14  
13  
12  
11  
10  
9
technical drawings  
according to DIN  
specifications  
96 11709  
1
2
3
4
5
6
7
8
Package SO16  
Dimensions in mm  
94 8875  
8 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 17-Jul-96  
Preliminary Information  
U3665M  
Ozone Depleting Substances Policy Statement  
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of  
continuous improvements to eliminate the use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain  
such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized  
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,  
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
TELEFUNKEN Semiconductors  
9 (9)  
Rev. A1, 17-Jul-96  
Preliminary Information  

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