U4283BM-BFLG3 [TEMIC]
AM / FM - PLL; AM / FM - PLL型号: | U4283BM-BFLG3 |
厂家: | TEMIC SEMICONDUCTORS |
描述: | AM / FM - PLL |
文件: | 总9页 (文件大小:154K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
U4283BM
AM / FM - PLL
Description
2
The U4283BM is an integrated circuit in BICMOS by I C bus. The device is designed for all frequency
technology for frequency synthesizer. It performs all the synthesizer applications of radio receivers, as well as
functions of a PLL radio tuning system and is controlled RDS (Radio Data System) applications.
Features
Reference oscillator up to 15 MHz
Three programmable switching outputs
(open drain up to 20 V)
Two programmable 16 bit dividers
adjustable from 2 to 65535
Few external component requirements due
to integrated loop-transistor for AM/FM
Fine tuning steps: AM 1 kHz
FM 2 kHz
High signal/ noise ratio
Block Diagram
PRT
5
SWO2 SWO3
AM/FM
SWO1
6
7
8
9
18
OSCIN
Oscillator
Switching outputs
R-Divider
OSCOUT
19
Latch
Status
2
SCL
Latch
Shift register
Latch
3
4
2
I C–BUS
SDA
AS
Interface
14
15
PDFM
PDAM
Phase
detector
Current
sources
10
12
Preamplifier
:
2
FMOSC
AMOSC
13
PDFMO
PDAMO
Analogue
outputs
16
AM/FM
switch
Preamplifier
N–Divider
1
Lock
detector
17
LD
11
20
V
94 8054 e
GND 2
GND 1
DD
Figure 1.
Ordering and Package Information
Extended Type Number
U4283BM-BFL
U4283BM-BFLG3
U4283BM-BFS
Package
Remarks
Taping according to IEC-286-3
SO20 plastic
SO20 plastic
SSO20 plastic
TELEFUNKEN Semiconductors
1 (9)
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Pin Description
Pin
1
2
3
4
5
6
7
8
Symbol
Function
Supply voltage
I C bus clock
V
GND1
OSCOUT
OSCIN
LD
1
2
3
4
5
20
19
18
17
DD
V
DD
2
SCL
SDA
AS
2
SCL
I C bus data
Address selection
Switching port
PRT
SDA
SWO 1 Switching output 1
SWO 2 Switching output 2
SWO3
AM/FM Switching output AM/FM
FMOSC FM oscillator input
GND 2 Ground 2 (analogue)
AMOSC AM oscillator input
PDFMO FM analogue output
AS
Switching output 3
9
10
11
12
13
14
15
16
17
18
19
20
PRT
16 PDAMO
15 PDAM
U4283BM
SWO 1
SWO 2
SWO 3
AM/FM
FMOSC
6
7
8
9
PDFM
FM current output
14
13
12
11
PDFM
PDAM AM current output
PDAMO AM analogue output
LD
Lock detector
PDFMO
AMOSC
GND2
OSCIN Oscillator input
OSCOUT Oscillator output
GND 1 Ground 1 (digital)
10
94 8055 e
Functional Description
The U4283BM is controlled via the 2-wire I C bus. For Each transmission on the I C bus begins with the
programming there are one module address byte, two “START”-condition and has to be ended by the “STOP”-
2
2
subaddress bytes and five data bytes.
condition (see figure 3).
The module address contains a programmable address bit
A 1 which with address select input AS (Pin 4) makes it
possible to operate two U4283BM-B in one system. If bit
A 1 is identical with the status of the address select input
AS, the chip is selected.
The integrated circuit U 4283 BM has two separate inputs
for AM and FM oscillator. Pre-amplified AM signal is
directed to the 16 bit N-divider via AM/FM switch,
whereas (pre-amplified) FM signal is first divided by a
fixed prescaler (:2). AM/FM switch is controlled by
software. Tuning steps can be selected by 16 bit
R-divider. Further there is a digital memory phase
detector. There are two separate current sources for AM
and FM amplifier (charge pump) as given in electrical
characteristics. It allows independent adjustment of gain,
whereby providing high current for high speed tuning and
low current for stable tuning.
The subaddress determines which one of the data bytes is
transmitted first. If subaddress of R-divider is
transmitted, the sequence of the next data bytes is DB 0
(Status), DB 1 and DB 2.
If subaddress of N-divider is transmitted, the sequence of
the next data bytes is DB 3 and DB 4. The bit organisation
of the module address, subaddress and 5 data bytes are
shown in figure 2
2 (9)
TELEFUNKEN Semiconductors
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Bit Organization
MSB
1
LSB
0
Module address
1
0
0
1
0
0/1
A1
A7
A6
A5
A4
A3
A2
A0
Subaddress (R-divider)
Subaddress (N-divider)
X
X
X
X
X
X
X
X
0
1
1
1
X
X
X
X
MSB
PRT
LSB
PD
CUR
Data byte 0 (Status)
SWO1 SWO2 SWO3
AM/
FM
PD
ANA
PD
POL
D7
D6
D5
D4
D3
D2
D1
D0
15
8
Data byte 1
Data byte 2
Data byte 3
Data byte 4
2
R-divider
2
7
0
2
R-divider
N-divider
N-divider
2
15
8
2
2
7
0
2
2
LOW
HIGH
AM/FM
FM-operation
PD analog
Negative polarity
Output current 2
AM-operation
TEST
Positive polarity
Output current 1
PD - ANA
PD - POL
PD - CUR
Figure 2.
TELEFUNKEN Semiconductors
3 (9)
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Transmission Protocol
MSB
LSB
S
Address
A
Subaddress
R-divider
A
A
Data 0
Data 3
A
A
Data 1
A
A
Data 2
A
P
A7
A0
MSB
LSB
S
Address
A
Subaddress
N-divider
Data 4
A
P
A7
A0
S = Start
P = Stop
A = Acknowledge
Figure 3.
Absolute Maximum Ratings
Parameters
Symbol
Value
–0.3 to +6
Unit
V
Supply voltage
Pin 1
V
DD
Input voltage
Output current
Output drain voltage
Output voltage
Pins 2, 3, 4, 10, 12, 18 and 19
Pins 3, 5, 6, 7, 8 and 9
Pins 6, 7, 8 and 9
V
–0.3 to V +0.3
V
mA
V
I
DD
I
–1 to +5
20
O
V
OD
Pins 13 and 16
V
AO
15
V
Output current
Pins 13 and 16
I
–1 to +20
–25 to +85
–40 to +125
125
mA
C
C
AO
Ambient temperature range
Storage temperature range
Junction temperature
T
amb
T
T
stg
C
j
Electrostatic handling (MIL Standard 883C)
V
ESD
2000
V
Thermal Resistance
Parameters
Symbol
R
thJA
Value
160
Unit
K/W
Junction ambient
4 (9)
TELEFUNKEN Semiconductors
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Electrical Characteristics
V
DD
= 5 V, T
= 25°C, unless otherwise specified.
amb
Parameters
Supply voltage
Quiescent supply current
Test Conditions / Pins
Pin 1
Symbol
Min.
4.5
Typ.
5.0
6.0
Max.
5.5
11.6
Unit
V
mA
V
DD
DD
Pin 1
I
FM input sensitivity, R = 50
FMOSC
AMOSC
G
f = 70 to 120 MHz
Pin 10
Pin 10
V
V
25
50
mV
mV
i
SFM
f = 120 to 130 MHz
i
SFM
AM input sensitivity, R = 50
G
f = 0.5 to 35 MHz
Oscillator input sensitivity, R = 50 OSCIN
f = 0.1 to 15 MHz
i
Pin 12
Pin 14
V
25
mV
mV
i
SAM
G
V
SOSC
100
Switching output SWO 1, SWO 2, SWO3, AM/FM (open drain)
Output voltage
LOW
LOW
Pins 6, 7, 8 and 9
I = 1 mA
I = 0.1 mA
L
V
SWOL
V
SWOL
200
20
400
100
mV
mV
L
Output leakage current
HIGH
Pins 6, 7, 8 and 9
V5, V6 = 20 V
I
100
nA
OHL
Lock detector output (open drain)
Output voltage
LOW
I = 3 mA
0.4
V
Switching output PRT
Pin 5
Output voltage
HIGH
LOW
I = 1 mA
V
V
V
V –0.4
DD
V
V
V
L
OH
I = 1 mA
0.4
0.1
L
OL
OL
LOW
I = 0.1 mA
L
Phase detector PDFM
Output current 1
Output current 2
Pin 14
Pin 14
I
I
400
100
500
125
600
150
A
A
PDFM
PDFM
Phase detector PDAM
Output current 1
Output current 2
Pin 15
Pin 15
I
I
75
20
100
25
125
30
A
A
PDAM
PDAM
Analogue output PDFMO, PDAMO
Saturation voltage
I = 15 mA
Pins 13 and 16
Pins 13 and 16
V
270
400
1
mV
A
sat
Leakage current
I C bus SCL, SDA, AS
I
LEAK
2
Input voltage
HIGH
LOW
Pins 2, 3 and 4
V
iBUS
3.0
0
V
DD
1.5
V
V
Output voltage
I
= 3 mA
Pin 3
SDA
Acknowledge LOW
Clock frequency
Rise time SDA, SCL
V
f
SCL
0.4
100
1
V
kHz
s
O
Pin 2
Pins 2 and 3
t
r
TELEFUNKEN Semiconductors
5 (9)
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Parameters
Fall time SDA, SCL
Period of SCL
HIGH
Test Conditions / Pins
Pins 2 asn 3
Pin 2
Symbol
Min.
Typ.
Max.
300
Unit
ns
t
f
t
H
4.0
4.7
s
s
LOW
t
L
Setup Time
Start condition
Data
Stop condition
t
4.7
250
4.7
s
ns
s
sSTA
t
sDAT
t
sSTOP
Time the bus must be free
before a new transmission
can be started
t
4.7
s
wSTA
Hold time
Start condition
DATA
t
t
4.0
0
s
s
hSTA
hDAT
Bus Timing
SDA
t
wSTA
t
r
t
f
t
hSTA
SCL
t
t
t
H
t
sSTA
t
S
t
L
sSTOP
hDAT
P
hSTA
t
hDAT
P
P = Stop, S = Start
93 7671 e
Figure 4.
The following hints are recommended:
C = 100 nF should be very close to Pin 1 (V ) and
Pin 20 (GND1)
4 MHz quartz must be very close to Pin 18 and Pin 19
Components of the charge pump (C /R for AM and
3
DD
1
1
C /R for FM) should be very close to Pin 15 with
respect to Pin 14.
2
2
GND2 (Pin 10 - analog ground) and GND 1
(Pin 20 - digital ground ) must be connected according
to figure 6
6 (9)
TELEFUNKEN Semiconductors
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Application Circuit
12 V
220
220
16 V
10 k
1 k
1 n
3 k
100 n
AMOSC
10 k
R1
FMOSC
6.8 n
150 p
56 k
R2
2.2 n
27 p
27 p
C1
C2
33 k
220 n
4 MHz
18
14
19
17
15
13
12
11
20
16
C3
U4283BM
100 n
10
3
1
2
4
6
8
9
5
7
C4
100
6.3 V
1 n
27
5 V
12 k
12 k
22 k
22 k
22 k
22 k
20 V
94 8056 e
Figure 5.
PCB-Layout
GND
C
2
C
1
19
18
17
15
14
13
12
20
16
11
10
C
4
C
3
9
1
2
3
8
4
6
5
7
V
DD
94 8057 e
Figure 6.
TELEFUNKEN Semiconductors
7 (9)
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Package Information
Package SO20
Dimensions in mm
9.15
8.65
12.95
12.70
7.5
7.3
2.35
0.25
0.25
0.10
0.4
10.50
10.20
1.27
11.43
20
11
technical drawings
according to DIN
specifications
13038
1
10
Package SSO20
Dimensions in mm
5.7
5.3
6.75
6.50
4.5
4.3
1.30
0.15
0.15
0.05
0.25
0.65
6.6
6.3
5.85
20
11
technical drawings
according to DIN
specifications
13007
1
10
8 (9)
TELEFUNKEN Semiconductors
Rev. A1, 15-May-96
Preliminary Information
U4283BM
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
9 (9)
Rev. A1, 15-May-96
Preliminary Information
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