U644B-FP [TEMIC]

Flasher, 18-m Shunt, Extremly Low Current Consumption; 闪光器, 18米的分流,极低的电流消耗
U644B-FP
型号: U644B-FP
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

Flasher, 18-m Shunt, Extremly Low Current Consumption
闪光器, 18米的分流,极低的电流消耗

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U644B  
Flasher, 18-m Shunt, Extremly Low Current Consumption  
Description  
The bipolar integrated circuit, U644B, is used in relay- If the flasher module provides an 4-pin connector the  
controlled automotive flashers where a high level EMC control pin of U644B (Pin 6) can be used to operate the  
is required. Lamp outage is indicated by frequency doub- IC in an extremly low-current mode.  
ling during hazard warning as well as direction mode.  
Features  
Frequency doubling indicates lamp outage  
Minimum lamp load for flasher operation: 1 W  
Very low susceptibility to EMI  
Frequency independent of temperature and voltage  
change  
Protection according to ISO TR7637/1 level 4  
Control input (Kl 15)  
Relay driver output with high current-carrying  
capacity and low saturation voltage  
Ordering Information  
Extended Type Number  
U644B  
Package  
DIP8  
Remarks  
U644B-FP  
SO8  
Block Diagram  
R
15  
30  
5
10 k  
2
6
Measuring  
R
comparator K  
C
4
1
1
18 m  
Shunt  
V
49 mV  
S
20 k  
2 k  
20 k  
4
K
7
1
2
K
Pulse  
generator  
3
8
R
1
49 a  
Comparator K  
Relay  
2
3
20 k  
R
3
49 a  
K
3
3.3 k  
5
13 k  
49 a  
Comparator K  
30 V  
20 k  
R
2
1
GND  
220  
GND  
–31  
12707  
Figure 1. Application circuit as a car flasher with control input  
Resistor R1, R2 and R3: 1/4 Watt  
R2 for protection against continuous reversed polarity: 1 Watt  
TELEFUNKEN Semiconductors  
1 (6)  
Rev. A2, 25-Feb-97  
U644B  
+V  
S
+49  
2
6
Measuring  
R
comparator K  
C
1
4
1
18 m  
Shunt  
V
49 mV  
S
20 k  
20 k  
2 k  
4
K
7
1
2
K
Pulse  
R
3
8
1
generator  
49 a  
Comparator K  
Relay  
2
3
20 k  
R
3
49 a  
K
3
3.3 k  
5
13 k  
49 a  
Comparator K  
30 V  
20 k  
R
2
1
GND  
220  
GND  
–31  
12708  
Figure 2. Application circuit as a car flasher without control input  
Resistor R1, R2 and R3: 1/4 Watt  
R2 for protection against continuous reversed polarity: 1 Watt  
Application Note  
In figure 1, the control input (Pin 6) is used to enable or disable U644B. If the ignition is switched off, the current  
consumption is less than 50 A.  
In figure 2, Pin 6 is bridged to Pin 2, so U644B works like U6043B. Note that the resistor values of R and R are  
2
3
different from the U6043B (see application circuit).  
Pin Description  
Pin  
1
2
3
4
5
6
7
8
Symbol  
GND  
Function  
IC ground  
1
2
3
4
GND  
VS  
8
7
6
5
SI  
V
S
Supply voltage V  
Relay driver  
S
REL  
OSC  
OSC  
LD  
Vs  
C Oscillator  
1
U644B  
R Oscillator  
1
REL  
V
S
Supply voltage / or control input  
Lamp failure detection  
Start input (49a)  
LD  
SI  
OSC  
OSC  
13297  
Figure 3. Pinning  
2 (6)  
TELEFUNKEN Semiconductors  
Rev. A2, 25-Feb-97  
U644B  
Functional Description  
Pin 1, GND  
Pin 7, Lamp outage detection  
The integrated circuit is protected against damage via The lamp current is monitored via an external shunt  
resistor R to ground (–31) in the case of battery reversal. resistor R and an internal comparator K1 with its  
2
4
An integrated protection circuit and the external reference voltage of typ. 49 mV (V = 12 V). The outage  
S
resistances R and R limit the ac-current pulse in the IC. of one lamp out of two lamps is detected according to the  
1
2
following calculation:  
Nominal current of 1 lamp: 21 W / (V = 12 V):  
Pin 2, Supply voltage, V - Power  
S
S
Connected directly to battery (Kl 30).  
I
= 1.75 A  
lamp  
Nominal current of 2 lamps: 2 x 21 W / (V = 12 V):  
S
Pin 3, Relay control output (driver)  
I
= 3.5 A.  
lamp  
The relay control output is a high-side driver with a low The detection threshold is recommended to be set in the  
saturation voltage and capable to drive a typical automo- middle of the current range: I 2.7 A  
Thus the shunt resistor is calculated as:  
outage  
tive relay with a minimum coil resistance of 60  
An integrated overvoltage detection disables the output at  
20 V to protect the lamps during jump start  
.
R
R
= V (K1) / I  
= 49 mV/2.7 A = 18 m .  
sh  
T outage  
V
S
sh  
Comparator K1‘s reference voltage is matched to the  
characteristics of filament lamps (see “control signal  
threshold” in the data part).  
Pin 4 and 5 Oscillator  
Flashing frequency, f , is determined by the R C  
1
1
1
components as follows (see figure 1):  
The combination of shunt resistor and resistance of wire  
harness prevents Pin 7 from a too high voltage in the case  
of shortet lamps.  
1
f1  
Hz  
R1 C1 1.5  
where  
C
1
R
1
47 F  
6.8 k to 510 k  
Pin 8, Start input  
Start condition for flashing: the voltage at Pin 8 has to be  
below K3 threshold (flasher switch closed).  
Humidity and dirt may decrease the resistance between  
49 a and GND. If this leakage resistance is 5 k the IC  
is still kept in its off-condition. In this case the voltage at  
Pin 8 is between the thresholds of comparators K2 and  
K3.  
During the bright phase the voltage at pin 8 is above the  
K2 threshold, during the dark phase it is below the K3  
threshold.  
In the case of a lamp outage (see Pin 7) the oscillator  
frequency is switched to the lamp outage frequency f  
2
with f  
2.2 f .  
2
1
Duty cycle in normal flashing mode: 50%  
Duty cycle in lamp outage mode: 40% (bright phase)  
Pin 6, Supply voltage, control input  
When the IC is powered by the battery Pin 6 is the control  
input to switch the IC to zero current consumption during  
stand-by.  
For proper start conditions a minimum lamp wattage of  
1 W is required.  
Absolute Maximum Ratings  
Reference point Pin 1  
Parameters  
Symbol  
V
S
Value  
18  
Unit  
V
Supply voltage  
Pin 2  
Surge forward current  
t = 0.1 ms  
Pin 2  
Pin 2  
Pin 8  
I
I
I
1.5  
1.0  
50  
A
A
mA  
P
FSM  
FSM  
FSM  
t = 300 ms  
P
t = 300 ms  
P
Output current  
Pin 3  
I
0.3  
A
O
Power dissipation  
T
= 120°C  
= 105°C  
= 60°C  
= 60°C  
DIP8  
SO8  
DIP8  
SO8  
P
tot  
P
tot  
P
tot  
P
tot  
230  
300  
690  
560  
mW  
mW  
mW  
mW  
amb  
T
amb  
T
amb  
T
amb  
TELEFUNKEN Semiconductors  
3 (6)  
Rev. A2, 25-Feb-97  
U644B  
Absolute Maximum Ratings (continued)  
Parameters  
Symbol  
Value  
150  
Unit  
°C  
Junction temperature  
T
j
Ambient temperature range  
DIP8  
SO8  
T
–40 to +120  
–40 to +105  
°C  
°C  
amb  
T
amb  
Storage temperature range  
T
stg  
–55 to +150  
°C  
Thermal Resistance  
Parameters  
Symbol  
Value  
Unit  
Junction ambient  
DIP8  
SO8  
R
thJA  
R
thJA  
110  
160  
K/W  
K/W  
Electrical Characteristics  
Typical values under normal operation in application circuit figure 1, V (+49, Pin 2) = 12 V.  
S
Reference point ground (–31), T  
= 25°C unless otherwise specified  
amb  
Parameters  
Supply voltage range  
Supply current  
Test Conditions / Pin  
Symbol  
V (+49)  
Min.  
Typ.  
8 to 18  
5
Max.  
7
Unit  
V
mA  
Pin 2  
S
Dark phase or  
stand-by  
Bright phase  
I
S
Pin 2  
Pin 2  
Pin 3  
Supply current  
Relay output,  
I
6
10  
1.3  
mA  
V
S
I
300 mA  
V
O
O =  
saturation voltage  
Relay output,  
Pin 3  
I
0.1  
mA  
O
reverse current  
Relay coil resistance  
R
L
60  
Relay output overvoltage  
detection (relay disabled)  
Start delay  
(first bright phase)  
Frequency determining  
resistor  
19.0  
20.2  
22.5  
10  
V
ms  
k
t
on  
R
6.8  
510  
47  
1
1
Frequency determining  
capacitor  
C
F
Frequency tolerance (normal flashing, basic frequency  
f not including the tolerance of the external compo-  
f  
–6.5  
+ 6.5  
%
1
1
nents R and C )  
1
1
Bright period (basic frequency f )  
Bright period (control frequency f )  
f  
f  
45  
35  
55  
45  
%
%
1
1
2
2
Frequency increase (lamp failure)  
f
2.1  
53  
40.5  
47.5  
f
2.4  
61  
46.6  
54.5  
f
1
Hz  
2
1
Control signal threshold  
V = 18 V  
s
Pin 7  
Pin 7  
Pin 7  
V
R3  
V
R3  
V
R3  
57  
43.6  
51  
mV  
mV  
mV  
V = 8 V  
s
V = 13.5 V  
s
Resistance between 49a to ground for stand-by  
Lamp load  
R
P
2
5.6  
k
W
P
L
1
4 (6)  
TELEFUNKEN Semiconductors  
Rev. A2, 25-Feb-97  
U644B  
Package Information  
Package DIP8  
Dimensions in mm  
9.8  
9.5  
7.77  
7.47  
1.64  
1.44  
4.8 max  
3.3  
6.4 max  
0.5 min  
0.36 max  
0.58  
0.48  
9.8  
8.2  
2.54  
7.62  
8
5
technical drawings  
according to DIN  
specifications  
13021  
1
4
Package SO8  
Dimensions in mm  
5.2  
4.8  
5.00  
3.7  
4.85  
1.4  
0.25  
0.2  
0.4  
3.8  
0.10  
1.27  
6.15  
5.85  
3.81  
8
5
technical drawings  
according to DIN  
specifications  
13034  
8
5
TELEFUNKEN Semiconductors  
5 (6)  
Rev. A2, 25-Feb-97  
U644B  
Ozone Depleting Substances Policy Statement  
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of  
continuous improvements to eliminate the use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain  
such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized  
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,  
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
6 (6)  
TELEFUNKEN Semiconductors  
Rev. A2, 25-Feb-97  

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