2N2222A [TE]
Radiation Hardened NPN Silicon Switching Transistors;
| 型号： | 2N2222A |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Radiation Hardened NPN Silicon Switching Transistors PC 开关 晶体管 |
| 文件： | 总6页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Features
Qualified to MIL-PRF-19500/255
Levels
JANSM-3K Rads (Si) JAN
JANSD-10K Rads (Si) JANTX
JANSP-30K Rads (Si) JANTXV
JANSL-50K Rads (Si) JAN
JANSR-100K Rads (Si)
TO-18 (TO-206AA), Surface mount UA & UB
Packages
Applications
Switching and Linear Applications
DC and VHF Amplifier Applications
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Off Characteristics:
Collector - Emitter Breakdown
IC = 10 mAdc
V(BR)CEO Vdc
50
—
VCB = 75 Vdc
VCB = 60 Vdc
ICBO1
ICBO2
µAdc
nAdc
10
10
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
—
VEB = 6.0 Vdc
VEB = 4.0 Vdc
IEBO1
IEBO2
µAdc
nAdc
10
10
—
—
Collector - Emitter Cutoff Current
VCE = 50 Vdc
ICES
nAdc
50
On Characteristics1:
2N2221A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
30
35
40
40
20
—
150
—
120
—
Forward Current Transfer Ratio
hFE
2N2222A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
50
75
100
100
30
—
325
11
120
—
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
0.3
1.0
Collector - Base Cutoff Current
Base - Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Vdc
Vdc
—
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
0.6
—
1.2
2.0
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.
(Continued next page)
1
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Visit www.macom.com for additional data sheets and product information.
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2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Dynamic Characteristics:
IC = 1 mAdc, VCE = 10 Vdc, f = 1 kHz
2N2221A, L, UA, UB
Small-Signal Short-Circuit
Forward Current Transfer Ratio
hfe
30
50
—
—
2N2222A, L, UA, UB
Magnitude of Small-Signal Short-Circuit,
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz | hfe |
2.5
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO
VCB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz C1BO
8
25
Output Capacitance
pF
—
Switching Characteristics:
Turn-On Time
Turn-Off Time
(See figure 17 of MIL-PRF-19500/255)
(See Figure 18 of MIL-PRF-19500/255)
TON
ns
ns
—
—
35
TOFF
300
Absolute Maximum Ratings @ TC = 25°C
Parameter
Absolute Maximum
50 Vdc
Collector - Emitter Voltage (VCEO
)
Collector - Base Voltage (VCBO
)
75 Vdc
Emitter - Base Voltage (VEBO
)
6.0 Vdc
Collector Current (IC)
800 mAdc
Total Power Dissipation (PT) TA = +25ºC
Thermal Resistance (RΘJC) Junction to Ambient
Operating Temperature
0.5 W
325 ºC/W
-65°C to +200°C
-65°C to +200°C
Storage Temperature
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Outline Drawing (TO-18):
Dimensions
Inches Millimeters
Symbol
Notes
Min.
Max.
Min.
Max.
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
0.178
0.170
0.209
0.195
4.52
4.32
5.31
1.95
—
—
0.210
0.230
5.33
5.84
—
0.100 Typ.
2.54 Typ
6
0.016
0.500
0.016
—
0.021
0.750
0.019
0.050
—
0.41
12.70
0.41
—
0.53
7, 8
19.05 7, 8, 13
0.48
1.27
—
7, 8
7, 8
7, 8
—
0.250
0.100
—
6.35
2.54
—
—
—
Q
0.030
0.048
0.046
0.010
0.76
1.22
1.17
0.25
5
TL
TW
r
0.028
0.036
—
0.71
0.91
—
3, 4
3
10
6
a
45°Typ.
1, 2, 9, 11, 12, 13
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10.Dimension r (radius) applies to both inside corners of tab.
11.In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.
12.Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13.For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Outline Drawing (UA Surface Mount):
Dimensions
Inches Millimeters
Min.
Symbol
Notes
Max.
0.225
0.225
0.155
Min.
Max.
5.71
5.71
3.93
BL
BL2
BW
0.215
—
5.46
—
—
—
—
—
3
0.145
3.68
BW2
0.155
3.93
Pin #
1
2
3
4
CH
L3
0.061
0.003
0.029
0.032
0.072
0.045
0.022
0.006
0.075
0.007
0.042
0.048
0.088
0.055
0.028
0.022
1.55
0.08
0.74
0.81
1.83
1.14
0.56
0.15
1.90
0.18
1.07
1.22
2.23
1.39
0.71
0.56
Transistor Collector
Emitter
Base
N/C
5
LH
—
—
—
—
—
5
LL1
LL2
LS
LW
LW2
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension LW2
maximum and L3 maximum define the maximum width and depth of the castellation at any point on its
surface. Measurement of these dimensions may be made prior to solder dipping.
6. The co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not
exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Outline Drawing (UB Surface Mount):
Dimensions
Millimeters
Symbol
Inches
Max.
Min.
Min.
1.17
2.92
2.16
Max.
1.42
3.25
2.74
3.25
2.74
0.96
0.89
1.02
2.01
0.61
0.203
0.305
0.559
BH
BL
0.046
0.115
0.085
—
0.056
0.128
0.108
0.128
0.108
0.038
0.035
0.040
0.079
0.024
0.008
0.012
0.022
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
0.022
0.017
0.036
0.071
0.016
—
0.56
0.43
0.91
1.81
0.41
—
r1
—
—
r2
—
—
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
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6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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