2N6439 [TE]
POWER TRANSISTOR; 功率晶体管
| 型号： | 2N6439 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | POWER TRANSISTOR |
| 文件： | 总6页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by 2N6439/D
The RF Line
NP N S ilic on
2N 6439
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
•
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
•
Built–In Matching Network for Broadband Operation Using Double
Match Technique
NPN SILICON
•
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating
Symbol
Value
33
Unit
Vdc
Vdc
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
4.0
Total Device Dissipation @ T = 25°C (1)
P
D
146
Watts
C
Derate above 25°C
0.83
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
1.2
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS* (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, I = 0)
V
33
60
4.0
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, V = 0)
V
V
(BR)CES
C
BE
Emitter–Base Breakdown Voltage
(I = 5.0 mAdc, I = 0)
—
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
2.0
mAdc
CBO
CB
E
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
1
ELECTRICAL CHARACTERISTICS* — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
10
—
100
—
(I = 1.0 Adc, V = 5.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
67
75
—
pF
ob
(V = 28 Vdc, I = 0, f = 1.0 MHz)
CB
E
BROADBAND FUNCTIONAL TESTS (Figure 6)
Common–Emitter Amplifier Power Gain
G
7.8
8.5
dB
—
PE
(V = 28 Vdc, P = 60 W, f = 225–400 MHz)
CC
out
Electrical Ruggedness
(P = 60 W, V = 28 Vdc, f = 400 MHz, VSWR 30:1
ψ
No Degradation in Output Power
out
CC
all phase angles)
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
7.8
55
10
—
—
—
dB
%
PE
(V = 28 Vdc, P = 60 W, f = 400 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 60 W, f = 400 MHz)
CC
out
* Indicates JEDEC Registered Data.
C
C
8
7
L
2
C
4
D
U
T
C
5
C
1
L
1
C
3
L
5
C
6
L
3
C
1
1
C
2
R
1
L
4
C
8
9
C
1
0
C1
C5
t
oC4, C11 — 4.0ā –ā 40 pF
oC8 — 33 pF
t
V
C C
=
2
V
C9 — 1000 pF
C10 — 5.0 µF
R1 — 15 Ω
L1, L2 — 3/16″ x 1″ Copper Strap
L3 — 1.5 µH
L4 — 10 µH
L5 — 1 Turn #16 AWG, 5/16″ I.D.
Figure 1. 400 MHz Test Amplifier (Narrow Band)
2
NARROW BAND DATA
1
0
8
6
4
0
0
0
0
1
20
00
8 0
6 0
4 0
2 0
V
C C
=
2
8
V
V
C C
=
2
8
V
f
=
2
2
5
MH z
1
P
6
=
8
W
i n
4
0
0
M
H z
W
4
2
W
W
2
0
0
2
00
2
5
0
3
0
0
3
5
0
4
0
0
4
5
0
0
2
4
6
8
1
0
1
2
1
4
1
6
1
8
2 0
f
,
F
R
EQ
U
E
N
C
Y
(
M
H
z
)
P ,
i n
I
N
P
U
T
P
O
WE
R
(
WAT
T
S
)
Figure 2. Pout versus Frequency
Figure 3. Output Power versus Input Power
1
2
1
00
8 0
6 0
4 0
2 0
0
P
=
=
6
0
28
W
V
ou t
f
=
4
0
0
MH z
V
C C
11
P
i n
=
6
W
1
0
4
W
9
8
2
00
2
5
0
3
0
0
3
5
0
4
00
4 50
1
0
1
4
1
8
2
2
2
6
3
0
f
,
F
R
EQ
U
E
N
C
Y
(
M
H
z
)
V
C C
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(V O LTS )
Figure 4. Power Gain versus Frequency
Figure 5. Output Power versus Supply Voltage
1
0
0
f
=
2
25
MH z
8
6
0
0
P
i n
=
8
W
4
W
4
2
0
0
0
1
0
1
4
1
8
2
2
2
6
3 0
V
C C
,
S
U
P
PLY
V
O
L
T
A
G
E
(V O LTS )
Figure 6. Output Power versus Supply Voltage
3
R
1
B
C
1
3
C
1
5
2
V
C C
RFC 1
+
-
C
1
4
C1 6
L
1
L
2
C1 2
A
T
DUT
L
5
5
0 Ω
LI NE
C
1
0 .5″
T
1
50 Ω
L
I
N
4
E
L4
0
3
. 8″
4
:1
C
8
C11
C
9
C
1 0
C
C5
C6
C
2
C7
:
1
C
4
A
L
3
R
2
C
1
7
C1 — 68 pF
RFC1 — Ferrite Bead Choke, Feroxcube VK200 19/4B
B — Ferroxcube 56-590-65/4B Ferrite Bead
T1, T2 — 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn
R1 — 11 Ω, 1.0 W
C2, C4, C8, C10 — 27 pF
C3, C5, C11 — 10 pF
C6, C7 — 51 pF
C9 — 1.0ā –ā 10 pF JOHANSON
C12 — 100 pF
C13, C15 — 680 pF
C14, C16 — 1.0 µF, 35 V Tantalum
C17 — 0.1 µF, ERIE Red Cap
R2 — 20 Ω, 1/4 W
L1 — 10 Turns, #22 AWG, 1/8″ I.D.
L2 — 4 Turns, #16 AWG, 1/4″ I.D.
L3 — 6 Turns, #24 AWG, 1/8″ I.D.
L4, L5 — 1″ x 0.25″ Microstrip Line
Board Material 0.031″ Thick Teflon-Fiberglass
Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic
BROADBAND DATA (Circuit, Figure 7)
1
0
1
00
P
V
=
=
6
0
W
V
ou t
2
8
C C
8
6
8
6
4
0
0
0
P
V
=
=
6
0
W
V
ou t
2
8
C C
4
2
0
2
0
0
2
00
2
5
0
3
0
0
3
5
0
4
00
2
0
0
2
50
3
00
3
50
4 0 0
f
,
F
R
EQ
U
E
N
C
Y
(
M
H
z
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 8. Power Gain versus Frequency
Figure 9. Efficiency versus Frequency
4
6
P
V
=
=
6
0
W
V
ou t
4 50
2
8
5
4
3
2
1
C C
f
=
2
2
5
MHz
4 00
0
.
1
0. 1
2 75
Z
4
5
0
i n
Z
*
O
L
0. 2
P
ou t
=
6
0
W,
C C
=
V
2
8
V
f
=
2
2
5
M
2
H z
3
5
0
4 00
7
5
3
5
0
.
3
F
R
E
Q
U
E
N
C
Y
Z
Z *
O L
O H MS
i n
M
H
z
O
H
M
S
Z
*
O L
*
O L
*
O L
*
O L
=
C
o
n
j
u
g
a
t
e
o
f
t
i
h
e
o
p
t
i
m
2
2
5
0
0
2
1
0
.
.
.
.
.
7
9
2
2
5
+
j
j
j
j
j
1
2
2
0
1
.
.
.
.
.
6
2
.
.
.
2
-
j
j
j
1
0
0
.
.
.
8
9
1
Z
Z
Z
=
i
m
pe
d
a
n
c
e
i
n
t
o
w
h
c
h
a
t
h
e
2
7
5
+
+
+
+
2
1
1
0
9
-
-
o
=
u
t
p
u
t
o
p
e
r
a
t
e
s
a
t
g
i
f re q u
v
e
n
3
5
0
5
0
0
0
12
=
p
ow
er
,
v
o
l
t
a
g
e
a
n
d
4
4
26.
+
+
j
j
0
0
.
.
2
9
2
0
0
2
5
0
3
0
0
3
5
0
4
0
0
1
6
.
f
,
F
R
EQ
U
E
N
C
Y
(
M
H
z
)
Figure 10. Input VSWR versus Frequency
Figure 11. Series Equivalent Input-Output Impedance
5
PACKAGE DIMENSIONS
F
D
4
N O TE S :
L
R
Q
1
.
F
AN
G
E
I
S
I
S
O
L
A
T
E
D
I
N
A
L
L
S
T
Y
L
E
S
.
K
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
A
B
C
D
E
F
2
1
4
2
5
5
2
5
8
0
0
3
3
2
3
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3
4
9
3
1
0
2
1
2
8
8
9
0
9
8
5
7
3
6
8
9
0
9
1
1
2
5
4
2
1
5
2
7
5
3
5
8
0
. 1
. 9
. 6
. 5
. 0
. 3
. 5
. 1
. 1
. 0
. 3
. 3
. 3
. 5
4
5
2
8
4
3
4
5
7
6
1
0
0
7
0
0
0
0
0
0
0
0
0
0
0
.
.
.
.
.
.
.
.
.
.
.
9
4
2
2
0
2
7
0
4
1
1
60
90
35
10
85
00
20
04
05
50
50
5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9
5
3
2
1
2
7
0
4
1
1
1
1
4
90
10
00
20
20
10
30
06
40
60
70
30
30
95
1
2
H
J
1
1
1
L
K
L
11
B
4
4
3
3
2
C
J
N
Q
R
U
0. 11
1
4
E
0
0
.
.
2
7
N
1
1
1
H
A
S
T
Y
P
L
E
1
:
U
IN
1
.
E
M
L
I
T
C
T
E
T
R
O
2
3
4
.
.
.
C
E
B
O
L
E
MIT T ER
R
AS E
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
6
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