A19-1 [TE]
10 TO 1000 MHz CASCADABLE AMPLIFIER; 10至1000 MHz级联放大器
| 型号： | A19-1 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 10 TO 1000 MHz CASCADABLE AMPLIFIER |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A19-1/SMA19-1
10 TO 1000 MHz
· HIGH OUTPUT POWER: +22.5 dBm (TYP.)
· HIGH THIRD ORDER I.P.: +35 dBm (TYP.)
· MEDIUM NOISE FIGURE: 6.0 dB (TYP.)
Typical Performance @ 25°C
Specifications (Rev. Date: 11/00)*
Characteristics
Typical
Guaranteed
0° to 50°C
0.0-1.0 GHz
10.5 dB
-54° to +85°C
Frequency
0.0-1.1 GHz
11.5 dB
±0.2 dB
16 dB
5.5 dB
22.5 dBm
+35 dBm
+51 dBm
+58 dBm
1.5:1 / 1.5:1
90 mA
0.0-1.0 GHz
10.0 dB
±0.8 dB
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
±0.6 dB
7.0 dB
20.0 dBm
6.5 dB
20.5 dBm
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
2.0:1 / 2.0:1
99 mA
1.7:1 / 1.7:1
94 mA
* Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice.
Absolute Maximum Ratings
Storage Temperature
-62° to +125°C
125°C
Max. Case Temperature
Max. DC Voltage
+17 Volts
+13 dBm
100 mW
0.5 W
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3 µsec max.)
“S” Series Burn-in Temperature (Case)
125°C
Thermal Data: Vcc = 15 Vdc
Thermal Resistance θjc
Transistor Power Dissipation Pd
Junction Temperature Rise Above Case Tjc
100°C/W
0.907 W
91°C
Outline Drawings
Package
Figure
Model
TO-8
A19-1
Surface Mount
SMA Connectorized
CE
CA19-1
Specifications subject to change without notice. • North America: 1-800-366-2266
Visit www.macom.com for complete contact and product information.
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