AN4001 [TE]
Application Note 300 Watt Class E Amplifier Using MRF151A; 应用笔记300瓦E类放大器使用MRF151A
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TE CONNECTIVITY |
| 描述： | Application Note 300 Watt Class E Amplifier Using MRF151A |
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Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
BACKGROUND
Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma,
magnetic resonance imaging (MRI), and communications. The power levels and frequency of operation of in-
dustrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at
13.56 MHz and 27.12MHz, laser and MRI applications tend to migrate towards 40 MHz, 80 MHz, and 128 MHz.
Power levels span the gamut from a few watts to hundreds of kilowatts.
The stability, reliability, and low RDS-ON resistance of MACOM high frequency, RF, power MOSFETs
make them suitable for switch-mode amplifier applications. The MRF product line, which includes RF power
MOSFETS in the 1MHz-1GHz frequency range, has been a communication industry standard for more than 30
years. These devices are also used in many switch-mode amplifier applications and can yield much higher
power and efficiency levels than specified in the traditional class AB designs. This application note presents a
class E amplifier design based on MRF151A, a single ended power MOSFET, where it yields up to 300 watts at
81.36 MHz with better than 82% efficiency.
Class E amplifiers are well suited to industrial applications due to their simplicity and the high efficiency
which can be obtained at a single frequency or over a narrow bandwidth. In this type of amplifier the power
transistor operates as an on-off switch and, and in conjunction with the load network, it offsets the current and
voltage waveforms in order to minimize power dissipation and maximize efficiency [1].
THEORY
A simplified schematic of a class E amplifier is shown in Figure 1. It consists of a transistor, a shunt
capacitance C, a series LC circuit, a load R, and additional bias and input matching circuitry. The shunt capaci-
tor C can be made up by the internal output capacitance of the transistor or by a combination of internal and
external capacitances. The transistor in this case operates as a switch and drives the load network C, Co, Lo,
R. The design of this load network is done such that the voltage and current through the drain of the transistor
are out of phase while power is delivered to the load resistor R. This offset implies that, ideally, no power is
dissipated in the transistor thus the efficiency is ideally
100%.
Vdd
According to [1] the design equations of the load
network are given by (1)-(5). The design equations are
derived by starting out with the drain voltage waveform
equation and imposing a set of constraints peculiar to
the ideal class E amplifier circuit. Po is the output power
delivered to the load R given a supply voltage Vdd. VDpeak
is the peak drain voltage. Reactances X and B take into
account the limited Q value of the inductor (Q = ωLo/R).
This Q value is assumed to be in the 3 to 10 range. B is
the susceptance of the shunt capacitance C. X is a re-
actance added to the resonance tuned LoCo in order to
shape the voltage and current waveforms for optimum
class E operation.
Lo
Co
C
R
Figure 1. Class E Amplifier Block Diagram
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
2
V
dd
Po ≈ 0 . 577
(1)
R
V
d d
(2)
(3)
I
=
d c
1 . 7 3 4 R
V
= 3 . 56 V
Dpeak
dd
1 . 110 Q
(4)
(5)
X =
R
Q − 0 . 67
0 . 1836
0 . 81 Q
B =
(1 +
)
2
R
Q
+ 4
DESIGN AND SIMULATION
MRF 151A was chosen for this application because of its 50V operation capability as well as the low
DS-ON (~0.2ohm). Figure 2 shows the Level 1 SPICE model used in conjunction with Agilent’s ADS simulation
R
software to optimize the Class E circuit. To ease computations equations 1.0, 4.0, and 5.0 were re-arranged to
solve for C, R, Lo, Co as a function of frequency f, output power Po, drain voltage Vdd, and inductor Q. When
these variables are set to 81.36MHz, 300 watt, 48V, and 5 respectively the calculated values are C = 92.4pF, R
= 4.4ohm, Lo = 54nH and Co = 88.3pF. One issue that arises from these results is that the required shunt ca-
pacitance C = 92.4pF is smaller than the output capacitance of MRF151A which, per the data sheet, is 220pF.
This implies that a class E amplifier would not operate optimally. The maximum frequency of operation for opti-
mal, class E performance, for a particular capacitance value is given by:
0.0292
(6)
fmax
=
RCout
For a Cout = 220pF the maximum frequency for optimal performance is ~30MHz. Since the desired
frequency of operation is 81.36 MHz, the ratio f/fmax is 2.7. According to [2], the obtainable efficiency for f/fmax,≈
2.7 is approximately 82%, which is still an attractive number. The calculated component values were used as a
starting point in the simulation and varied in order to maximize output power and minimize DC current. Another
constraint used in this optimization was the instantaneous drain voltage which was capped at 125V, which is
the breakdown voltage of MRF151A. Figure 3 shows the optimized circuit and Figures 4,5, and 6 show the
resulting voltage and current waveforms on the transistor drain, voltage across the load resistor R, and DC cur-
rent.
On the input side, the gate is matched to 50 ohm using conjugate impedance values. ADS can be used
to easily perform this task. A 25 ohm resistor has been added in shunt to improve the bandwidth and stability.
The results suggest a power output of 319 watts and an efficiency of 84.1%. Also, the peak drain volt-
age is 120.6 V.
A sinusoidal signal has been used to drive the MRF151A circuit. It is possible to shape the drive signal
in order to increase efficiency, however, that is beyond the scope of this paper.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
DRAIN
L
L3
L=1.6 nH
R=
C
C2
C=16 pF
Port
P2
Num=2
JFET_NFET
JFET1
Model=JFETM1
GATE
C
C3
C=30 pF
L
L2
Port
P1
Num=1
L=1.42 nH
R=
MOSFET_NMOS
MOSFET1
C
C1
C=350 pF
L=10.6um
W=125.7um
Diode
DIODE1
Model=DIODEM1
SOURCE
L
Port
L1
P3
L=.35 nH
Num=3
R=
Diode_Model
DIODEM1
Is=
Rs=.2 Ohm
Gleak=
N=
Bv=125 V
Ibv=
Nbv=
Ibvl=
Vjs w=
Fcsw=
AllowScaling=no
Tnom=
LEVEL1_Model
MOSFETM1
NMOS=yes
PMOS=no
Vto=2.8 V
Kp=1.5
Gamma=.2
Phi=
Lambda=100u
Rd=.14 Ohm
Rs=.07 Ohm
Cbd=
JFET_Model
JFETM1
NFET=yes Af=
PFET=no
Vto=-15.5 V Imelt=
Beta=.4 N=
Lambda=.2 Isr=
Rd=
Rs=
Is=
Cgbo=
Rsh=
Cj=
Kf=
Af=
Fc=
Rg=0.13
Rds=
Tnom=
Trise=
N=
Tt=
Ffe=
Tt=
Cd=
Cjo=1275 pF
Vj=
M=.5
Nbvl=
Kf=
Af=
Trise=
Xti=
Eg=
AllParams=
Imax=
Mj=
Ffe=
Cjsw=
Mjs w=
Js=
Jsw=
Rsw=
Gleaksw =
Ns=
Ikp=
Cjsw=
Ms w=
Nr=
Alpha=
Vk=
Fc=
Imax=
Imelt=
Isr=
Nr=
Ikf=
Tox=
Nsub=
Nss=
Tpg=
Ld=
Uo=600
Nlev=
Gdsnoi=1
Cgs=
Cgd=
Pb=
M=
Vtotc=
Betatce=
Xti=
Ffe=
Gdsnoise=no
AllParams=
Cbs=
Is=
Pb=
Cgso=
Imax=
Imelt=
AllParams=
Fc=
Tnom=
Trise=
Kf=
Cgdo=
Figure 2. MRF151A SPICE Model
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
V_DC
SRC1
Vdc=48 V
C
C12
C=1000 uF
I_Probe
I_Probe1
L
L1
L=2 uH
R=.001 Ohm
I_Probe
I_Probe2
Vdrain
D
S
G
Vgate
Vout
Term
Vinput
L
L9
MRF151
X1
C
C11
C=197 pF
Term2
Num=
Z=3 Ohm
P_1Tone
PORT3
C
C6
C=152 pF
L
L4
C
C2
C=.1 uF
L=23 nH
R=.01 Ohm
R
R3
Num=3
L=32 nH
R=.1 Ohm
Circulator
CIR1
F1=
Z=50 Ohm
P=dbmtow(42)
Freq=81.36 MHz
Vref lected
R=25 Ohm
Term
Term4
Num=4
Z=50 Ohm
TRANSIENT
Tran
Tran1
StopTime=30000 nsec
MaxTimeStep=1.0 msec
Figure 3. Class E Amplifier Circuit in ADS
m3
time=29.96usec
Vdrain=120.6 V
140
25
m3
120
100
80
60
40
20
0
20
15
10
5
0
-5
-20
-10
29.950
29.955
29.960
29.965
29.970
29.975
29.980
29.985
29.990
29.995
30.000
time, usec
Figure 4. Voltage and current waveforms on the drain of MRF151A
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
60
40
m2
m1
PROTOTYPE
time= 29.97usec
Vout=-41.16 V
20
Before a prototype can be tested, the low value
load resistor must be matched to 50 ohm for use with
standard test equipment. A simple way of doing this is
by using a lumped element quarter wave as described
in [3] and shown here in Figure 7. The characteristic
impedance of this quarterwave section is given by:
0
m2
-20
-40
-60
time= 29.97usec
Vout=46.35 V
m1
29.95
29.96
29.97
29.98
29.99
30.00
time, usec
Zo = Zin Zout
(7)
Figure 5. AC voltage across the load resistor
For a load resistor R = 3 ohm the characteristic imped-
ance would be 12.25 ohm. For f = 81.36 MHz the com-
ponent values are L = 24 nH and C = 160 pF.
10
9
m6
8
7
The prototype is shown in Figure 8. The load
m6
6
inductors are the hair-pin type and are made of AWG10
copper wire. The inner diameter are 0.35” in both cases
and the lengths are 0.63” for 23nH and 0.97” for 24nH.
A vector network analyzer was used to measure the
inductance values and the length of the inductor was
adjusted until the desired values of 23 and 24 nH were
achieved. The recommended reactance value for the
drain RF choke is at least 10R or 30 ohm. This trans-
lates into LRFC > 60nH. This inductor has been built
using 12 turns of AWG 16 copper wire wound on an
Amidon T-157-6 iron powder torroid which provides
about 13uH of inductance. This is more than enough
to eliminate any contribution from the biasing network.
Some optimization of the load network was necessary
due to PCB parasitic capacitances and inductance er-
ror. The final value of the series resonant capacitor
was 174.1pF.
time= 29.97usec
5
4
3
2
1
0
I_Probe1.i=7.903 A
29.95
29.96
29.97
29.98
29.99
30.00
time, usec
Figure 6. DC current drawn from the power supply.
L
C
C
Zout
Zin
The performance of the prototype is shown in
Figure 7. Lumped element quarter wave section
Table 1 and Figure 9. At Pout = 300 watt, Eff = 82.1.
These numbers correlate well with simulated results of
319 watts with 84.1% efficiency. Power gain, on the
other hand is 13dB in the simulation but only 10.9dB
when tested. Since the SPICE model does not incor-
porate thermal effects a faster gain compression of the
prototype is to be expected. If higher gain is required it
can be achieved by a tradeoff in power and efficiency
as shown in Table 1. For example at Pout = 250 watt,
Gain = 14.2dB and Eff = 78.1, which is still a relatively
good number.
At Pout = 300 watt and Pin = 24.3 watt, power
added efficiency (PAE) is 77%. Dissipated power in
this case is 89.6 watts. Since the thermal resistance of
MRF151A is RθJC= 0.42 ºC/W the rise in junction tem-
perature is 37.6 ºC. Even with a case temperature of
85 ºC the junction temperature would be only ~123 ºC.
Figure 8. Prototype of class E amplifier
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
At 300 watts, second and third harmonic levels are –39dBc and –57dBc respectively. If necessary the
harmonic levels can be improved further by including additional filter stages.
The drain voltage was also measured using an oscilloscope and it is shown in Figure 10. Although
the limited frequency response of the probe and EM interference are masking some of the higher
frequency components it can be seen that the simulated voltage waveform shown in Figure 4 is a
reasonable prediction of the measured waveform.
Pout
(Watts)
300
250
200
150
100
50
Pout
(dBm)
54.8
54.0
53.0
51.8
50.0
47.0
37.0
Pin
(Watts)
24.3
9.5
Pin
(dBm)
43.9
39.8
37.9
36.3
34.9
32.7
27.8
Gain
(dB)
Id
(Amps)
7.61
6.67
5.75
4.74
3.75
2.47
0.71
Eff
(%)
Vd
(Volts)
48.0
H2
(dBc)
-39
-39
-38
-37
-35
-34
-32
H3
(dBc)
-57
-56
-57
-59
-57
-56
-46
10.92
14.19
15.15
15.43
15.07
14.29
9.21
82.1
78.1
72.5
65.9
55.6
42.2
14.6
-
-
-
-
-
-
6.1
4.3
3.1
1.9
5
0.6
Table 1. Performance of Class E amplifier with MRF151A MOSFET
PERFORMANCE OF CLASS E AMPLIFIER WITH MRF151A
350
300
250
200
150
100
50
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Pin (watts)
Pout
Efficiency
Figure 9. Performance of Class E amplifier with MRF151A MOSFET
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Application Note
AN4001
Application Note
300 Watt Class E Amplifier Using MRF151A
Rev. 01262010
It would be possible to measure the current
waveform as well, however, this is a challenging task as
it requires measuring a very small voltage across a cur-
rent sensing resistor in the presence of large EM inter-
ference. From Figure 4, the current swing expected in
the drain circuit is about 30 A.
CONCLUSION
A class E power amplifier operating at 81.36
MHz has been designed and built using MACOM
MRF151A power MOSFET. Using a 48V power supply,
the amplifier yielded 300 watts of output power with bet-
ter than 82% efficiency and approximately 11dB gain.
At 250 watts of output power, better than 78% efficiency
with more than 14dB gain were obtained. At 300 watts,
second harmonic levels were –39dBc and third har-
monic levels were –57dBc.
Figure 10. Drain voltage at Pout = 300 watt
REFERENCES
[1]
[2]
[3]
H.Krauss, C. Bostian, F. Raab, Solid State Radio Engineering, John Wiley and Sons, 1980.
A. Grebennikov, N. O. Sokal, Switchmode RF Power Amplifiers, Elsevier, 2007.
G. Hiller, Designing With PIN Diodes, MACOM Application Note AG312.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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