M02139 [TE]
1G/10G Gbps TIA with AGC and Rate Select;
| 型号： | M02139 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 1G/10G Gbps TIA with AGC and Rate Select |
| 文件： | 总18页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M02139
1G/10G Gbps TIA with AGC and Rate Select
The M02139 is a multi-rate TIA supporting data rates from 1 Gbps to 10.3 Gbps and having a wide input dynamic
range to support different transmission distance requirements. Input overload of 2 mA and input sensitivity of
PP
better than -19 dBm are useful for single-mode, high power long haul links, as well as short haul multi-mode links.
In order to satisfy such high sensitivity and good optical overload requirements, automatic gain control (AGC) is
implemented in the M02139. The AGC monitors the output amplitude and automatically reduces the TIA gain when
the photodiode current exceeds the AGC threshold, maintaining the output at a constant level.
Requiring no extra pins on the ROSA, rate select is controlled by the DC potential on the mon pad. Low rate is
optimized for 1G/1.25 Gbps performance with a typical sensitivity lower than -22 dBm. A replica of the average
photodiode current is available at the MON pad for photo-alignment and SFF-8472 Rx power monitoring.
Applications
Features
• Fibre Channel Transceivers (2x, 4x, 8x, 10x)
• 10GBASE-SR, IR and LR Links
• SONET/SDH OC-192/STM-64
• 10 Gbps ROSA
• Typical -19 dBm average sensitivity @ 10.3 Gbps
• Low rate mode for 1G/1.25 Gbps operation
• No filter (PINK) capacitor required
• AGC provides dynamic range of 23 dB
• 3.8 kΩ differential transimpedance
• SFP/SFP+ Modules
• 10GBASE/1GBase Dual Rate Modules
• XFP, XENPAK, X2 and 300-pin MSA transponder modules
• 2 mA overload input current
PP
• Photodiode current monitor
• Internal or external bias for photodiode
• Single +3.3 V supply
• Available in die form only
Typical Applications Diagram
1 nF
V
CC
Typically
AC-Coupled
to Limiting
Amplifier
PINK
PINA
DOUT
Limiting
Amplifier
M02139
DOUTB
Monitor Output/Rate Select
Rm
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02139-DSH-001-D
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Ordering Information
Part Number
Package
Operating Temperature
M02139-13
M02139-23
M02139-33
Waffle Pack
–40 °C to 95 °C
–40 °C to 95 °C
–40 °C to 95 °C
Sawn Quartered Wafer
Expanded whole wafer on a ring
Revision History
Revision
Level
Date
Description
D
C
Release
August 2011
March 2011
Added 10G specifications. Added final specifications.
Preliminary
Removed 10G support and added lower data rate sensitivity performance.
Revised ordering information details.
B
A
Preliminary
Preliminary
August 2010
April 2010
Corrected Figure 3-2 and other text edits.
Initial release.
Typical Eye Diagram
Pad Configuration
2
1
14
13
12
GND
11
VCC
AGC
NC
DOUT
3
PINK
PINA
4
VCC
5
MON
6
DOUT
7
NC
8
GND
10
9
10.3 Gbps, -15 dBm, 20 mV/div, 16 ps/div
Die size ≈ 1242 x 932 µm
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1.0 Product Specification
1.1
Description of Key Specifications
1.1.1
Input Referred Noise
In the design of a Transimpedance Amplifier, the primary goal is to minimize the input referred noise of the
amplifier. This achieves the best S/N ratio for optimum bit error rate performance of the incoming optical data
stream. The noise performance of a TIA is a key specification for meeting the stringent optical sensitivity
requirement. In general, the input referred noise calculations for a TIA are identical to those in other conventional
amplifiers. The input referred noise can be determined from several methods. Traditionally at Mindspeed, TIA noise
is obtained from dividing the output RMS voltage noise of the TIA by the transimpedance. The small signal
transimpedance of the TIA can be calculated by applying a known p-p input current and then measuring the p-p
differential output voltage. The equations used for I (Input Referred Noise) and G
below. The TIA output RMS noise can be measured conveniently by using a wide band oscilloscope (or by using a
power meter and converting the noise power to noise voltage).
(Transimpedance) are shown
N
TIA
I = (Vout
/ G
)
N
RMS
TIA
G
= (Vout / I_input ), where:
PP PP
TIA
I = Input referred noise in RMS
N
G
= TIA small signal transimpedance
TIA
I_input = p-p input current
PP
1.1.2
Optical Input Sensitivity
TIA input sensitivity can be calculated from the optical sensitivity equation directly based on the input referred
noise, photodiode responsivity and transmitter extinction ratio information. Note that the Signal to Noise (S/N) must
-
12
exceed 14.1 to achieve a system bit error rate (BER) of 1x10
.
Sensitivity = 10log {((S/N x I x (ER + 1)) / (2 x ρ x (ER – 1))) x 1000} dBm
N
Where:
Sensitivity = Input sensitivity expressed in average power
-
12
S/N = 14.1(for 10
BER)
I = Input Referred Noise in RMS
N
ER = Extinction Ratio = 10 (typically)
ρ = Photodiode Responsivity = 0.9 (typically)
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Product Specification
1.2
Absolute Maximum Ratings
These are the absolute maximum ratings at or beyond which the device can be expected to fail or be damaged.
Reliable operation at these extremes for any length of time is not implied.
Table 1-1.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
V
Power supply (V -GND)
-0.4 to +4
-65 to +150
5.0
V
CC
CC
T
Storage temperature
°C
STG
I
PINA Input current (average)
mA
IN_AVG
I
PINA Input current (peak to peak)
Maximum input voltage at PINA, Dout, DoutB and AGC
8
mA
PP
IN_PP
V
V
,
-0.4 to 1.65
V
PINA, Dout
V
,V
DoutB AGC
V
, V
Maximum input voltage at PINK and MON
-0.4 V to V +0.4 V
V
PINK MON
CC
I
Maximum average current sourced out of PINK
Maximum average current sourced out of Dout and DoutB
10
10
mA
mA
PINK
I
, I
Dout DoutB
1.3
Recommended Operating Conditions
Table 1-2.
Recommended Operating Conditions
Parameter
Rating
3.3 ± 10%
0.25
Units
V
V
Power supply (VCC - GND)
CC
CPD
Max. Photodiode capacitance (V = 1.75 V when using PINK), for
pF
r
10.3 Gbps data rate
TA
Operating ambient temperature
-40 to +95
100
°C
Ω (1)
RLOAD
Recommended differential output loading
NOTES:
1. 100 Ω is the load presented by the input of a Mindspeed post amp.
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Product Specification
1.4
DC Characteristics
V
= +3.3 V ±10%, T = -40 °C to +95 °C, T = -40 °C to +110 °C, typical specifications are for V = 3.3 V,
CC
A
J
CC
T = 25 °C, unless otherwise noted.
A
Table 1-3.
Symbol
ICC
DC Characteristics
Parameter
Min
—
Typ
39
Max
Units
mA
V
Supply current (no loads)
43
2
V
Photodiode bias voltage (PINK - PINA)
Common mode output voltage
1.6
—
1.8
2.6
B
V
—
1.0
V
CM
V_RateSEL
Mon Pad voltage for High Rate (> 1.25 Gbps) operation
0
—
—
V
2.0 (1)
140
Mon Pad voltage for Low Rate (≤ 1.25 Gbps) operation
1.6
ROUT
Output resistance - differential
100
120
Ω
NOTES:
1. 2.0 V is the maximum value to allow Imon to source current as defined by SFF-8472 Average Power Monitoring.
1.5
AC Characteristics
V
= +3.3 V ±10%, C = 0.25 pF, L = 0.5 nH, T = -40 °C to +95 °C, T = -40 °C to +110 °C, typical
CC
IN
IN
A
J
specifications are for V = 3.3 V, T = 25 °C, unless otherwise noted.
CC
A
Table 1-4.
AC Characteristics
Parameter
Conditions
Minimum
Typical
Maximum
Units
Small Signal Bandwidth
-3 dB electrical (Below AGC turn-on,
linear gain region)
—
6.0
—
GHz
Small Signal Transimpedance
Overload Input Current (1)
Differential Output (Below AGC turn-
on, linear gain region)
—
3800
—
Ω
2.0
3.0
—
mA
PP
Maximum Input Saturation (2)
+4
—
—
—
dBm
mV
Maximum Differential Output Swing
Iin range: 100 µAPP – 2.0 mA
150
200
PP
PP
Input Referred Noise (RMS) (3)
High rate (unfiltered)
Low rate (unfiltered)
Duty Cycle Distortion p-p
—
—
—
1500
550
5
—
—
10
nA
DCD
DJ
ps
ps
Iin range: 20 µAPP – 2.0 mA
PP
Deterministic Jitter p-p
Iin range: 20 µAPP – 2.0 mA
—
8
19
PP
(Includes DCD)
AGC Settling Time
To reach 1% of AGC final value within
six time constants
1
—
45
—
70
µs
Low Frequency Cutoff
Low Frequency Cut-off
-3 dB electrical
—
kHz
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Product Specification
Table 1-4.
AC Characteristics
Parameter
Conditions
No input current
Minimum
Typical
Maximum
Units
Photodiode current monitor Offset
—
—
2
—
1
µA
dB
Photodiode current monitor Accuracy (4) Iin range: 10 µAAVG –2.0 mAAVG after
offset removed, VMON = 0 – 2 V
—
Photodiode current monitor Gain Ratio
Power Supply Rejection Ratio
V
MON = 0 to 2 V
—
—
—
—
—
—
1:1
24
—
—
—
—
—
—
—
DC to 1 MHz
dB
(5)
10.3 Gbps
-18.5
-19.5
-20.5
-22
(5)
8.5 Gbps
dBm
Optical input sensitivity
(5)
6.144 Gbps
(5)
1.25 Gbps
NOTES:
1. Overload is the largest p-p input current that the M02139 accepts while meeting specifications.
2. The device may be damaged beyond this optical input signal level.
3. Input Referred Noise is derived by calculation as (RMS output noise) / (Gain at 100 MHz).
4. Includes variation over supply and temperature.
-12
5. Measured by using 10
BER. Transmitter extinction ratio is 10 dB and responsivity of photo diode is 0.9 A/W.
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2.0 Pad Definitions
Figure 2-1. Bare Die Layout
2
1
14
13
12
GND
11
VCC
AGC
NC
DOUT
3
PINK
PINA
4
VCC
5
MON
6
DOUT
7
NC
8
GND
10
9
Table 2-1.
Pad Descriptions
Die Pad #
Name
Function
1
2
AGC
Monitor or force AGC voltage.
Power pin. Connect to most positive supply.
V
CC
3
4
5
PINK
PINA
Common PIN input. Connect to photo diode cathode.(1)
Active PIN input. Connect to photo diode anode.
Power pin. Connect to most positive supply.
V
CC
6
MON
Analog current source output and rate selection function input pin. Current matched to average photodiode
current. If externally biasing the photodiode cathode the MON can be used for rate selection function only.
See Section 3.2.4 for detailed information.
7
8,13
DOUT
NC
Differential data output (goes low as light increases).
No Connect. Leave floating.
9,10,11, 12
14
GND
Ground pin. Connect to the most negative supply (2)
.
DOUT
Backside
Differential data output (goes high as light increases).
Backside. Connect to the lowest potential, usually ground.
NA
NOTES:Notes:
1. Alternatively the photodiode cathode may be connected to a decoupled positive supply, e.g. V .
CC
2. All ground pads are common on the die. Only one ground pad needs to be connected to the TO-Can ground. However, connecting more than one
ground pad to the TO-Can ground, particularly those across the die from each other can improve performance in noisy environments.
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3.0 Functional Description
3.1
Overview
The M02139 is a 10.3 Gbps TIA with a wide input dynamic range to support different transmission distance
requirements. Input overload of 2.0 mA is provided to support short-haul fiber optic systems. In order to satisfy
PP
such high sensitivity and good optical overload requirements, automatic gain control circuit (AGC) is implemented
in the M02139. The AGC monitors the output amplitude and automatically reduces the TIA gain when the
photodiode current exceeds the AGC threshold, maintaining the output at a constant level.
A replica of the average photodiode current is available at the MON pad for photo-alignment and SFF-8472 Rx
power monitoring. A low pass filter can be engaged by pulling IMON above 1.6 V, for 1.25 Gbps operation.
Figure 3-1. M02139 Block Diagram
MON
R
f
BGAP
VREG
PINK
PINA
AGC
Vreg
Voltage Reg
DOUT
DOUT
Output
Buffer
Gain
TIA
Current
Ref Gen
DC
Servo
AGC
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Functional Description
3.2
General Description
3.2.1
TIA (Transimpedance Amplifier)
The transimpedance amplifier consists of a high gain single-ended amplifier (TIA) with a feedback resistor. The
feedback creates a virtual low impedance at the input and nearly all of the input current passes through the
feedback resistor defining the voltage at the output. Advanced design techniques are employed to maintain the
stability of this stage across all input conditions.
An on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to
several MHz.
The circuit is designed for PIN photodiodes with the anode connected to the input of the TIA and the cathode
connected to AC ground, such as the provided PINK terminal. Reverse DC bias is applied to reduce the photodiode
capacitance. PIN photodiodes and Avalanche photodiodes may also be connected externally to a voltage higher
than V . Care should be taken to correctly sequence the power supply to the externally biased photodiode so that
CC
the bias voltage does not appear when the TIA is powered down. Doing so may cause damage to the input of the
TIA, as the photodiode bias can become capacitively coupled to the PIN input, and cause damage.
3.2.2
Output Stage
The signal from the TIA enters a phase splitter followed by a DC-shift stage and a pair of voltage follower outputs.
These are designed to drive a differential (100 Ω) load. They are stable for driving capacitive loads such as
interstage filters. Each output has its own GND pad; it is recommended but not required that all four GND pads on
the chip should be connected. Since the M02139 exhibits rapid roll-off (3 pole), no external filtering is necessary.
3.2.3
Offset Cancellation DC Servo
Due to the high gain of the M02139 transimpedance amplifier, any amount of input offset voltage would be
amplified and create distortion at the output. Therefore, an offset cancellation circuit is used to remove input offset.
The RC offset cancellation circuit sets the low frequency cutoff to 50 kHz.
3.2.4
Monitor O/P and Rate Select Between 1G and 10G Operations
The monitor is a high impedance output which sources an average photodiode current for alignment or power
monitoring use. This output is mirrored off the PINK current source, and PINK must be used to enable IMON
usage. If PINK is not used as in the case of externally biased PIN or APD detectors, then photo current must be
monitored via that external bias supply and the MON pin tied to high or low depending on the input data rate.
This output is compatible with the DDMI Receive Power Specification (SFP-8472). An interfacing example is shown
below where the M02139 is connected to the M0217x driver family General Purpose I/O (GPIO) and Rx Power
monitoring A/D. Ensure that the voltage on VMON is in the range of 0 to 2.0 V. Refer to Table 3-1 and Figure 3-2.
Table 3-1.
Selection of Rm for Maximum Input Current
IIN Max (mA)
Optical Power (dBm)
Rm (Ω)
2
1
+3
0
500
1000
2000
0.5
-3
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Functional Description
For non-217X implementations, assume that the MON output would go into a resistor that is measured with a
voltage ADC. That being the case, a voltage drop (diode or other) would need to be switched in and out to create
the necessary voltage at the MON pin for both rate settings.
The high impedance O/P source replicates the average photodiode current for monitoring purposes. The IMON pin
can be also used to select between 1G and 10G operation. When the 1G mode is selected, the TIA output is
filtered to reduce the bandwidth to 1G levels and hence improve sensitivity. The device is in low rate mode for
Vmon greater than 1.6 V and in high rate mode for Vmon less than 1 V. The IMON feature can still be used under
the 1G and 10G operations.
Figure 3-2. Implementation with M0217x
M02139
10G Operation:
- RMON value selected to limit full-
scale voltage to <1V
+
-
1.3V
BW_Sel
(high=10G)
- GPIO is set low
MON
- AD_RxP in voltage mode
1G Operation:
RMON
- GPIO is set to an input (high-Z)
- AD_RxP is in current mode (input
voltage ~1.6V)
M0217x
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4.0 Applications Information
4.1
Recommended Pin Diode Connections
Figure 4-1. Suggested PIN Diode Connection Methods
V
CC
PDC_Bias
500 Ω
V
CC
(optional )
1 nF
PDC
V
CC
(optional )
1 nF
PINK
DOUT
PINK
DOUT
470 pF
M02139
M02139
PINA
GND
DOUTB
MON
PINA
GND
DOUTB
MON
TIA Bond Pad
TO Can Lead
TIA Bond Pad
TO Can Lead
Rmon
(optional. For
IMON to VMON
Recommended Circuit
Alternative Circuit: External PD/APD Bias
NOTE:
The monitor output is not usable if PINK does not bias the PD.
Selection of Rm depends on the maximum input current as detailed in Table 3-1.
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Applications Information
4.2
TO-Can Layout
Figure 4-2. Typical Layout Diagram with Photodiode Mounted on Metallized Shim or TO-Can Base (5 pin TO-Can)
DOUT
DOUTB
M02139
Shim
MON
VCC
NOTES:
Typical application inside of a 5 lead TO-Can.
It is only necessary to bond one V pad and one GND pad. However, bonding both GND pads is encouraged for improved performance in noisy
CC
environments.
The backside must be connected to the lowest potential, usually ground, with conductive epoxy or a similar die attach material. If a monitor output is
not required then a 4 lead TO-Can may be used.
4.3
Treatment of PINK
PINK does not require capacitor bypassing regardless of whether or not it is used to bias the photo diode.
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Applications Information
4.4
T0-Can Assembly Recommendations
Figure 4-3. TO-Can Assembly Diagram
NOT Recommended Example
PIN Diode
This bond is
unreliable
This bond is too
long and
unreliable
M02139
TO Can Leads
@4 or 5
Ceramic Shim
Submount
TO-CAN Header
Recommended Example
M02139
PIN Diode
TO Can Leads
@4 or 5
Metal Shim
Ceramic Shim
Submount
TO-CAN Header
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Applications Information
4.4.1
Assembly
The M02139 is designed to work with a wirebond inductance of 0.5 nH ± 0.25 nH. Many existing TO-Can
configurations will not allow wirebond lengths that short, since the PIN diode submount and the TIA die are more
than 1 mm away in the vertical direction, due to the need to have the PIN diode in the correct focal plane. This can
be remedied by raising up the TIA die with a conductive metal shim. This will effectively reduce the bond wire
length. Refer to Figure 4-3 on the previous page for details.
Mindspeed recommends ball bonding with a 1 mil (25.4 µm) gold wire. For performance reasons the PINA pad has
less via material connected to it. It therefore requires more care in setting of the bonding parameters. For the
same reason PINA has limited ESD protection.
In addition, please refer to the Mindspeed Product Bulletin (document number 0201X-PBD-001). Care must be
taken when selecting chip capacitors, since they must have good low ESR characteristics up to 1.0 GHz. It is also
important that the termination materials of the capacitor be compatible with the attach method used.
For example, Tin/Lead (Pb/Sn) solder finish capacitors are incompatible with silver-filled epoxies. Palladium/Silver
(Pd/Ag) terminations are compatible with silver filled epoxies. Solder can be used only if the substrate thick-film
inks are compatible with Pb/Sn solders.
4.4.2
Recommended Assembly Procedures
For ESD protection the following steps are recommended for TO-Can assembly:
a. Ensure good humidity control in the environment (to help minimize ESD).
b. Consider using additional ionization of the air (also helps minimize ESD).
c. As a minimum, it is best to ensure that the body of the TO-can header or the ground lead of the header is
grounded through the wire-bonding fixture for the following steps. The wire bonder itself should also be
grounded.
1. Wire bond the ground pad(s) of the die first.
2. Then wire bond the V pad to the TO-Can lead.
CC
3. Then wire bond any other pads going to the TO-Can leads (such as DOUT, DOUT and possibly MON)
4. Next wire bond any capacitors inside the TO-Can.
5. Inside the TO-can, wire bond PINK.
6. The final step is to wire bond PINA.
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Applications Information
4.5
TIA Use with Externally Biased Detectors
In some applications, Mindspeed TIAs are used with detectors biased at a voltage greater than available from TIA
PIN cathode supply. This works well if some basic cautions are observed. When turned off, the input to the TIA
exhibits the following I/V characteristic:
Figure 4-4. TIA Use with Externally Biased Detectors, Powered Off
PINA Unbiased
100
50
0
-800
-600
-400
-200
0
200
400
600
800
1000
1200
-50
-100
-150
-200
-250
-300
mV
In the positive direction the impedance of the input is relatively high.
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Applications Information
After the TIA is turned on, the DC servo and AGC circuits attempt to null any input currents (up to the absolute
maximum stated in Table 1-1) as shown by the I/V curve in Figure 4-5.
Figure 4-5. TIA Use with Externally Biased Detectors, Powered On
PINA biased
1000
800
600
400
200
0
-300
-200
-100
0
100
200
300
400
500
600
700
-200
-400
-600
-800
-1000
mV
It can be seen that any negative voltage below 200 mV is nulled and that any positive going voltage above the
PINA standing voltage is nulled by the DC servo. The DC servo upper bandwidth varies from part to part, but is
typically at least 50 kHz.
When externally biasing a detector such as an APD where the supply voltage of the APD exceeds that for PINA
Table 1-1, care should be taken to power up the TIA first and to keep the TIA powered up until after the power
supply voltage of the APD is removed. Failure to do this with the TIA unpowered may result in damage to the input
FET gate at PINA. In some cases the damage may be very subtle, in that nearly normal operation may be
experienced with the damage causing slight reductions in bandwidth and corresponding reductions in input
sensitivity.
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5.0 Die Specification
Figure 5-1. Bare Die Layout
2
1
14
13
12
GND
11
VCC
AGC
NC
DOUT
3
PINK
PINA
4
VCC
5
MON
6
DOUT
7
NC
8
GND
10
9
Pad
Pad
Pad
Number
X
Y
Pad
X
Y
Number
8 (3)
1
AGC
-126
-278
-493
-493
-278
-126
26
338
338
NC
178
325
426
426
325
178
26
-338
-338
-338
338
338
338
338
2 (1)
3
CC
9 (1, 2)
10 (1, 2)
11(1, 2)
12(1, 2)
V
GND
GND
GND
GND
GND
DOUT
PINK
PINA
124
4
5
6
7
-124
-338
-338
-338
V
CC
13(1, 2)
14
MON
DOUT
NOTES:
Process technology: Silicon-Germanium, Silicon Nitride
passivation
Die thickness: 300 µm
1. It is only necessary to bond one V pad and one GND pad.
CC
However, bonding more GND pads is encouraged for improved
performance in noisy environments.
Pad metallization: Aluminum
Die size: 1242 µm x 932 µm
Pad openings: 72 µm sq.
Pad Centers in µm referenced to center of device
Connect backside bias to ground
2. Each location is an acceptable bonding location.
3. Leave floating.
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General Information:
Telephone: (949) 579-3000
Headquarters - Newport Beach
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