M32000D4AFP [TE]
CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON; 控制的“ Q”宽带射频功率晶体管NPN硅
| 型号： | M32000D4AFP |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总5页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF327/D
The RF Line
NP N S ilic on
M
R
F
3
2
7
R
F
P
o
w
e
r
Tr ans is to r
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
•
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
•
Built–In Matching Network for Broadband Operation Using Double Match
Technique
NPN SILICON
•
•
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
Characterized for 100 t5o00 MHz
MAXIMUM RATINGS
Rating
Symbol
Value
33
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
4.0
Collector Current — Continuous
Collector Current — Peak
I
C
9.0
12
Total Device Dissipation @ T = 25°C (1)
P
D
250
Watts
C
CASE 316–01, STYLE 1
Derate above 25°C
1.43
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.7
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 80 mAdc, I = 0)
V
33
60
4.0
60
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 80 mAdc, V = 0)
V
V
(BR)CES
C
BE
Emitter–Base Breakdown Voltage
(I = 8.0 mAdc, I = 0)
—
Vdc
(BR)EBO
(BR)CBO
E
C
Collector–Base Breakdown Voltage
(I = 80 mAdc, I = 0)
V
—
Vdc
C
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
5.0
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain (I = 4.0 Adc, V = 5.0 Vdc)
h
FE
20
—
—
80
—
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
95
125
pF
ob
(V = 28 Vdc, I = 0, f = 1.0 MHz)
CB
E
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1
1
ELECTRICAL CHARACTERISTICS – continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
7.3
50
9.0
60
—
—
dB
%
PE
(V = 28 Vdc, P = 80 W, f = 400 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 80 W, f = 400 MHz)
CC
out
Load Mismatch
ψ
(V = 28 Vdc, P = 80 W, f = 400 MHz,
No Degradation in Output Power
CC
out
VSWR = 30:1 All Phase Angles)
R2
L 2
L 3
+
-
V
C
C
28 V dc
+
C1 2
C1 3
C
1
4
C1 5
-
L
4
L 5
R1
C11
R F
O U TPU T
C
1
0
L
1
Z
2
Z3
DUT
R F
IN PU T
Z
1
C5
C
6
C7
C8
C9
C2
C
3
C
4
C
1
C1, C2, C7, C8, C9 — 1.0ā –ā 20 pF Piston Trimmer (Johanson JMC 5501)
C3, C4 — 36 pF ATC 100 mil Chip Capacitor
C5, C6 — 43 pF ATC 100 mil Chip Capacitor
C10 — 100 pF UNELCO
L4 — 6 Turns #20 AWG Enameled, 3/16″ ID Closewound
L5 — 4 Turns #22 AWG Enameled, 1/8″ ID Closewound
Z1 — Microstrip 0.2″ W x 1.5″ L
Z2 — Microstrip 0.17″ W x 1.16″ L
C11, C15 — 0.1 µF Erie Redcap
Z3 — Microstrip 0.17″ W x 0.63″ L
C12, C13 — 680 pF Feedthru
R1, R2 — 10 Ω 2.0 Watt
C14 — 1.0 µF 50 V Tantalum
Board — Glass Teflon ε = 2.56, t = 0.062″
r
L1 — 4 Turns #22 AWG Enameled, 3/16″ ID Closewound with Ferroxcube
L1 — Bead (#56–590–65/4B) on Ground End of Coil
L2 — Ferroxcube VK200–19/4B Ferrite Choke
Input/Output Connectors Type N
DUT Socket Lead Frame Etched from 80–mil–Thick Copper
L3 — 7 Turns #18 AWG, 11/16″ Long, Wound on a 100 kΩ 2.0 Watt Resistor
Figure 1. 400 MHz Test Circuit
REV 1
2
1 5
1 3
11
9
1 20
1 00
8 0
P
V
=
=
8 0
2 8
W
V
o
u
t
P
i
=
1 5
W
n
C
C
1
0
W
7 .5
5
W
6 0
7
4
0
W
V
C
=
2 8
2 00
V
C
2 0
1 00
5
1 00
20 0
3
0
0
40 0
5 00
3 00
f , FRE Q UE NC Y ( MHz)
4 00
5 0 0
f , FR EQ U EN CY (M Hz)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Frequency
1 00
8 0
6 0
4 0
2 0
1 00
8 0
6 0
4 0
2 0
P
i
=
12
W
n
P
i
=
1
5
W
n
9
W
1 0
W
6
W
6
W
f
=
2 25 MH z
3 0
f
=
4 0 0 MH z
3 0
0
0
1 0
14
1
8
2
2
2 6
1 0
1 4
1 8
2
2
2
6
V
C
,
S UPP LY V OLTA GE (V OLTS)
V ,
C C
S UP PLY V O LTA G E ( VO LTS )
C
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
12 0
10 0
80
f
=
1
0
0
M
H
z
2 25 MH z
4 00 MH z
5 00 MH z
60
40
20
V
=
2
8
V
C
C
0
5
1 0
1 5
2
0
P , I NP UT P O WE R ( WATTS )
i n
Figure 6. Output Power versus Input Power
REV 1
3
Z
i
n
2 25
f
=
1 00 MH z
4 50
5 00
4 00
-
ā
5
2 25
1 00 MH z
4 00 5 00
f
=
- ā 1 0
1
0
4
5
0
Z
*
O L
5
1
1
0
5
P
o ut
=
8 0 W, V= 28
C C
V
f
M Hz
Z
O hm s
Z *
O L
O hms
i
n
10 0
22 5
40 0
45 0
50 0
0. 33
0. 56
1. 3ă
1. 58
0. 82
+
+
+
+
+
j 0. 26 2. 23
j 1. 64 2. 15
j 3. 29 1. 27
j 2. 53 1. 27
j 2. 9ă 1. 3ă
-
-
+
+
+
j3 . 3ă
j0 . 66
j1 . 0 ă
j1 . 5 4
j2 . 3 5
2
2
0
5
Z
Z
*
= Co nj uga t e of t he op ti mu m lo a d im pe d an ce in t o wh ich t he d evi ce o ut p ut o pe r at e s a t
v=ol t age an d f req uen cy.
a
g iv en o u tp u t p o we r,
O
L
*
L
O
Figure 7. Series Equivalent Input–Output Impedance
REV 1
4
PACKAGE DIMENSIONS
F
D
4
N O TE S :
1. F LAN G E I S I SO LAT ED I N A LL S TY LE S.
R
Q
K
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN
0. 960
0. 490
MAX
0. 990
0. 510
0. 300
0. 220
0. 120
0. 210
0. 730
0. 006
0. 440
0. 160
0. 170
0. 130
0. 130
0. 495
A
24. 38
12. 45
5. 97
5. 33
2. 16
5. 08
18. 29
0. 10
10. 29
3. 81
3. 81
2. 92
3. 05
11. 94
25. 14
12. 95
7. 62 0. 235
5. 58 0. 210
3. 04 0. 085
5. 33 0. 200
1
B
C
D
E
F
2
H
J
1
8
.
5
4
0. 720
L
0. 15 0. 004
11. 17 0. 405
4. 06 0. 150
4. 31 0. 150
3. 30
3. 30 0. 120
12. 57 0. 470
K
L
B
C
J
N
Q
R
U
0. 115
E
N
H
A
S
T
Y
L
E
1
:
U
P IN 1. E MIT T ER
2. C O LLE C TO R
3. E MIT T ER
4. B AS E
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 1
5
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