MA02204AF [TE]
3.3V 0.5W RF Power Amplifier IC for DECT; 3.3V 0.5W射频功率放大器IC，用于DECT
| 型号： | MA02204AF |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 3.3V 0.5W RF Power Amplifier IC for DECT |
| 文件： | 总4页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA02204AF
3.3V 0.5W RF Power Amplifier IC
for DECT
Applications
Features
•= Single Positive Supply
DECT
PCS
•= 16 Pin TSSOP Plastic Package
•= Class AB Bias
•= 1700 to 2200 MHz Operation
•= 50 Ω Input Impedance
•= Simple Output Match
Personal Wireless Telephony (PWT)
Cordless PBX
Radio/Wireless Local Loop (RLL/WLL)
•= Accommodates Battery Charging Conditions up to 5 Volts
•= Self-Aligned MSAG®-Lite MESFET Process
•= Guaranteed Stability and Ruggedness
VDD1
N/C
VDD2
Typical 3.3 Volt Performance
27 dBm Output Power
GND
GND
GND
GND
RFIN
32 dB Power Gain
GND
42% Power Added Efficiency
RFOUT /VDD3
GND
-40 dBc 2nd Harmonic
GND
GND
-45 dBc 3rd Harmonic
GND
N/C
N/C
ELECTRICAL CHARACTERISTICS VDD= 3.3 V, PIN= -5 dBm, TS=55 °C (Note 1), Output externally matched to 50 Ω
Characteristic
Symbol
Min
1880
26
Typ
1905
27
Max
Unit
Frequency Range
Output Power
Power Gain
ƒ
POUT
GP
1930 MHz
28
33
dB
dB
%
mA
dBc
dBc
—
dB
°C/
W
31
32
Power Added Efficiency
Drain Current
Harmonics
38
—
—
—
—
35
—
42
—
η
IDD
2ƒo
3ƒo
—
360
-40
-45
1.3:1
40
470
-34
-38
2.0:1
—
Input VSWR
Off Isolation (VDD=0 V)
—
RTH J-S
Thermal Resistance (Junction of 3rd stage FET to solder point of pin 13)
—
60
No Degradation in Power Output
Load Mismatch (VDD = 5 V, VSWR = 6:1, PIN = +5 dBm)
Stability (PIN = -6 to +5 dBm, VDD = 0-5 V, TS= -40 to +85 °C, Load VSWR = 6:1)
—
—
All non-harmonically related outputs
more than 60 dB below desired signal
Note 1: Ts is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with
ambient room temperature TA=25°C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 & 6, under
room temperature conditions , operating at 500 mW of load power (VDD = 3.3 V), unless otherwise specified.
Specifications subject to change without notice.
901642 K
ꢀ North America: Tel. (800)366-2266, Fax (800)618-8883
ꢀ Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
3.3V 0.5W RF Power Amplifier IC for DECT
MA02204AF
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Rating
DC Supply Voltage (Pins 1, 12, 16)
RF Input Power
Symbol
VDD
Value
Unit
Vdc
mW
°C
5
3
150
PIN
TJ
Junction Temperature
Storage Temperature Range
TSTG
-40 to +150
°C
APPLICATION INFORMATION
+
DD (+3.3V)
V
C1
C2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
L1
N/C
OUTPUT
RF
INPUT
RF
T1
T2
C3
C4
N/C
N/C
Figure 1. Evaluation Board Schematic
List of components:
C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C3 = 6.2 pF DLI multilayer ceramic chip capacitor (C11AH6R2B5TXL)
C4 = 2 pF DLI multilayer ceramic chip capacitor (C11AH2R0B5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.10" of 50 Ω==grounded coplanar waveguide (60 mil GETEK board)
T2 = 0.07" of 50 Ω==grounded coplanar waveguide (60 mil GETEK board)
Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.
Specifications subject to change without notice.
901642 K
ꢀ North America: Tel. (800)366-2266, Fax (800)618-8883
ꢀ Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
3.3V 0.5W RF Power Amplifier IC for DECT
MA02204AF
TYPICAL CHARACTERISTICS
30
60
50
40
30
20
10
0
60
50
40
30
20
10
0
3:1
VDD = 3.3 V
P = -5 dBm
POUT
25
20
15
10
5
η
IN
η
POUT
2:1
VDD = 3.3 V
= 1900 MHz
VSWR
ƒ
1:1
0
1700
1800
1900
Frequency (MHz
ƒ,=
2000
2100
2200
-6 -5 -4 -3 -2 -1
0
1
2
3
4
5
)
P , Input Pow er (dBm)
IN
Figure 2. Output power and efficiency vs. input power
Figure 3. Output power, efficiency and input VSWR vs.
frequency
40
30
25
20
15
10
5
60
50
40
30
20
10
0
= 1900 MHz
ƒo
P = -5 dBm
30
20
POUT
IN
V
DD = 3.3 V
10
η
0
-10
-20
-30
-40
ƒ = 1900 MHz
P = -5 dBm
IN
0
ƒο
2ƒο
3ƒο
4ƒο
5ƒο
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Frequency
V
DD, Supply Voltage (Volts)
Figure 4. Output power and efficiency vs. supply
voltage
Figure 5. Harmonics
Specifications subject to change without notice.
901642 K
ꢀ North America: Tel. (800)366-2266, Fax (800)618-8883
ꢀ Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
3.3V 0.5W RF Power Amplifier IC for DECT
MA02204AF
MECHANICAL DATA
Top view
50Ω lead transition
Figure 6. Component layout and printed circuit drawing for evaluation board
0
1900 MHz
14.6 -j27.8Ω
2100 MHz
1800 MHz
- 9 0
Figure 7. Output match impedance (as seen from pin 12)
Specifications subject to change without notice.
901642 K
ꢀ North America: Tel. (800)366-2266, Fax (800)618-8883
ꢀ Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
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