MA08602FR [TE]

1W Power Amplifier 14 - 14.5 GHz; 1W功率放大器14 - 14.5 GHz的
MA08602FR
型号: MA08602FR
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

1W Power Amplifier 14 - 14.5 GHz
1W功率放大器14 - 14.5 GHz的

放大器 功率放大器
文件: 总2页 (文件大小:34K)
中文:  中文翻译
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MA08602FR  
1W Power Amplifier  
(14 - 14.5 GHz)  
FEATURES  
= 35.5 dB Typical Small Signal Gain  
= 50 Input/Output Impedance  
Vdd  
Vdd  
= 40 dBm Third Order Intercept Point  
= Flange mount package designed for optimum electrical  
and thermal performance at Ku-band.  
= Broadband design centered on Ku-band VSAT.  
= Consistent Output Power and Gain makes fixed bias  
possible.  
GND  
GND  
MA0  
8602FR  
RFout  
RFin  
GND  
Vgg  
GND  
Vgg  
FR Package Pin Configuration  
DESCRIPTION  
MAXIMUM RATINGS (TA = -40°C to +70°C unless otherwise noted)  
The MA08602FR is a five stage MMIC power amplifier  
fabricated on M/A-COM’s Self-Aligned MSAG ®  
MESFET Process. This product is fully matched to 50  
ohms on both the input and the output and can be  
used as either a driver or an output stage amplifier.  
Although the broadband design can be used for many  
applications, it is ideally suited for Ku-band VSAT.  
Rating  
Symbol  
VDD  
Value  
Unit  
Vdc  
Vdc  
dBm  
°C  
DC Drain Supply Voltage  
DC Gate Supply Voltage  
RF Input Power  
Junction Temperature  
Storage Temperature  
9V  
-3V  
4
VGG  
PIN  
TJ  
+150  
TSTG  
-50 to +100  
°C  
ELECTRICAL CHARACTERISTICS VDD=8.0 V, IDQ=550 mA, PIN=-1 dBm, TA=-40°C to +70°C  
Characteristic  
Symbol  
Min  
Typ  
Max  
14.5  
33  
34  
+/- 1.0  
-1  
700  
-1  
20  
Unit  
GHz  
dBm  
dB  
Frequency  
14  
ƒ=  
Output Power, saturated  
Gain, saturated  
Gain Flatness over band, saturated  
PSAT  
GSAT  
30  
31  
30.5  
31.5  
+/- 0.5  
-4  
605  
-1.8  
1
2:1  
-25  
7
dB  
Input Power (POUT = 30 dBm)  
Drain Current (POUT = 31 dBm)  
Gate Bias Voltage (IDQ=550 mA)  
Gate Current (VDD=8.0V, IDQ=550mA, PIN=-1dBm, VDG<10.5V)  
Input VSWR  
PINJ  
IDS  
VGG  
IGG  
dBm  
mA  
V
-2.5  
mA  
3:1  
Harmonics  
dBc  
dB  
dBm  
2ƒο  
NF  
IP3  
Noise Figure  
10  
42  
Third-Order Intercept Point (VDD=8.0 V, IDQ=550 mA,PIN=-1  
40  
dBm)  
Thermal Resistance (Junction of 3rd stage FET to flange)  
Small Signal Gain (Pin = -20 dBm)  
RTH  
S21  
29  
°C/W  
dB  
30.5  
NOTE: All typical values are at room temperature (25°C)  
Specifications subject to change without notice.  
902818 C  
North America: Tel. (800)366-2266, Fax (800)618-8883  
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298  
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information  
1W Power Amplifier (14 - 14.5 GHz)  
MA08602FR  
Specifications subject to change without notice.  
902818 C  
North America: Tel. (800)366-2266, Fax (800)618-8883  
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298  
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information  

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