MA4BPS301 [TE]
PIN Diode Chips with Offset Bond Pads; PIN二极管芯片的补偿焊垫
| 型号： | MA4BPS301 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | PIN Diode Chips with Offset Bond Pads |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4BPS101, MA4BPS201, MA4BPS301
PIN Diode Chips with
Offset Bond Pads
Features
Chip Layout
•
•
•
•
•
Bond Pads Removed From Active Junction
Large Bond Pads Support Multiple Bond Wires
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polyimide Scratch Protection
Description
These silicon - glass PIN diode chips are fabricated with
M/A-COM’s patented HMIC™ process. They contain a single
shunt silicon PIN diode embedded in a glass substrate with dual
75 x 150 micron bond pads located near the chip edges. The large
pads allow use of multiple bond wires. The location of these pads
on a glass substrate results in low parasitic capacitance. The
diode junction is passivated with silicon nitride and a layer of
polyimide has been added for scratch protection during assembly.
The devices are available on industry standard tape frame for
automatic insertion and assembly in high volume applications.
Absolute Maximum Rating1
Applications
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
Incident RF Power
Mounting Temperature
Absolute Maximum
-60°C to +150°C
-65°C to +175°C
These diodes are designed for use as general PIN elements in
switches and switched pad attenuators. The chips can handle up
to 10 watts of RF power, and are well suited for use in T/R
switches for subscriber phones, particularly the higher power and
higher frequency systems for satellite based systems. They are
also useful for the switching element in phased array radar appli-
cations. The larger bond pad allows for two (2) 1 mil dia contact
wires which reduces the bond wire inductance almost in half.
100mA
70 V
+40 dBm (CW)
+320°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
Electrical Specifications @ +25°C
MA4BPS101
MA4BPS201
MA4BPS301
Parameters
Symbol Units
Test Conditions
-5 Volts at 1 MHz
+10 mA at 1 GHz
0 Volts at 1 GHz
-10 uA
Min. Typ. Max.
Min. Typ. Max. Min. Typ. Max.
Total Capacitance
Series Resistance1
Parallel Resistance2
Breakdown Voltage
Carrier Lifetime2
CT
Rs
Rp
Vb
TL
pF
Ω
0.13
1.9
14
0.17
2.4
0.20
1.0
6
0.25
1.3
0.30
0.9
6
0.35
1.2
KΩ
Volts
nS
70
110
300
38
70
110
300
28
70
110
300
24
+10mA/-6mA
Thermal Impedance2
1A/.01A, 10 mS
θjc
°C/W
1. Guaranteed by correlation to 2 MHz on-wafer measurements.
2. Tested on a sample basis only.
V2.01
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
Hanlding and Mounting Information
Chip Outline Drawing (ODS-1244)
Handling
All semiconductor dice should be handled with care to avoid
damage or contamination. For an individual die, the use of
plastic tipped tweezers or vacuum pick-up tool is recommended.
When using automatic pick and place, abrasion and mechanical
shock should be minimized.
Mounting
The dice have Ti-Pt-Au back metal, with a final gold thickness
of 0.1 micron. They can be die mounted with a gold-tin eutectic
solder preform or conductive epoxy. The mounting surface
must be clean and flat.
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with
a work surface temperature of 255°C and a tool tip temperature
of 265°C. When hot gas is applied, the tool tip temperature
should be 290°C. The chip should not be exposed to tempera-
tures greater than 320°C for more than 20 seconds. No more
than three seconds should be required for attachment.
Epoxy Die Attachment
INCHES
MILLIMETERS
MIN MAX
A minimum amount of epoxy should be used. A thin epoxy
fillet should be visible around the perimeter of the chip after
placement. Cure epoxy per manufacturer’s schedule.
DIM
A
MIN
MAX
0.019
0.019
0.0213
0.0213
0.0063
0.0033
0.0102
0.480
0.480
0.140
0.065
0.240
0.540
0.540
0.160
0.085
0.260
B
C
0.0055
0.0026
0.0094
Wire Bonding
The two bond pads on these die have a Ti-Pt-Au metalization
scheme, with a final gold thickness of 2.5 microns. The pads are
75 x 150 microns; up to two wires or a 100 micron wide ribbon
can be bonded to each pad. Thermosonic wedge wire bonding of
0.001” diameter gold wire is recommended with a stage temper-
ature of 150°C and a force of 25 to 40 grams. Ultrasonic energy
should be adjusted to the minimum required.
D
E
0.007 Ref.
0.002 Ref.
0.0043 0.0055
0.180 Ref.
0.050 Ref.
0.110 0.140
F
G
H
Notes:
1. Bond pad material: 2.5 micron thick gold.
2. Shaded areas indicate wire bonding pads
3. Backside metal: 0.1 micron thick gold.
Typical Resistance Curves
Series Resistance vs. Forward Current at 1 GHz
Parallel Resistance vs. Reverse Voltage at 1 GHz
100,000
10,000
1,000
100.0
MA4BPS101
10.0
MA4BPS101
MA4BPS201
MA4BPS301
MA4BPS201
1.0
MA4BPS301
0.1
0.0
0.0
2.0
4.0
6.0
8.0
10.0
0.1
1.0
10.0
100.0
Re v e r s e Vol t a ge ( Vol t s )
F o r w a r d C u r r e n t ( mA )
V2.01
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
Equivalent Circuits
Devices Typical Forward Bias Equivalent Circuit
Ls
Ls
Rs
10mA @
1 GHz
Ohms
1.9
Cp
Ls
Lv
Conditions
Rs
Lv
Cp
Cp
Units
pF
nH
nH
MA4BPS101
MA4BPS201
MA4BPS301
0.03
0.03
0.03
0.05
0.05
0.05
0.08
0.05
0.04
1.0
0.9
Devices Typical Forward Bias Equivalent Circuit
Ls
Ls
Cj
-5V @
1 MHz
pF
Rp
Cp
-
Ls
Lv
0V @
1 GHz
KW
14
Conditions
Cj
Cp
Cp
Rp
Units
pF
nH
nH
MA4BPS101
MA4BPS201
MA4BPS301
0.07
0.14
0.24
0.03
0.03
0.03
0.05 0.08
0.05 0.05
0.05 0.04
6
Lv
6
Note: Since the spice models for PIN and PN Junctions do not accurately predict the effects of stored charge, M/A-COM does not provide Spice
Parameters for PIN diodes. On wafer S-Parameter Data are available.
V2.01
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.01
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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