MA4E2054 [TE]
Surface Mount Low Barrier X-Band Schottky Diode; 表面贴装低壁垒X波段肖特基二极管
| 型号： | MA4E2054 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Surface Mount Low Barrier X-Band Schottky Diode |
| 文件： | 总8页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E2054 Series
Surface Mount Low Barrier
X-Band Schottky Diode
Package Outlines
Features
•
•
Low IR (<100nA @ 1V, <500nA @ 3V)
Designed for High Volume, Low Cost Detector and Mixer
Applications
SOT-143 (1068)
SOT-23 (287)
•
•
•
•
•
•
•
Low Noise Figure: 5.7 dB (SSB) at X-Band
High Detector Sensitivity: -55 dBm TSS
Low Capacitance: 0.30 pF
Low 1/F Noise
Single, Series Pair, and Unconnected Pair Configurations
Available in four package styles
Tape and Reel
SOD-323 (1141)
SOT-323 (1146)
Description
The MA4E2054 series are low barrier n-type silicon Schottky
diodes assembled in low cost surface mount plastic packages.
They are designed for use as high performance mixer and
detector diodes at frequencies from VHF through low Ku band.
Configurations
The MA4E2054-1141T (SOD-323), and the MA4E2054A and
the MA4E2054C (available in both the SOT-23 and SOT-323
packages) are single element Schottky diodes characterized for
use as single ended mixers and detectors. The MA4E2054B and
MA4E2054D (available in both the SOT-23 and SOT-323
packages) incorporate two Schottky chips in series pair
TOP VIEW
3
3
configurations.
The MA4E2054E-1068T consists of two
Schottky chips in the SOT-143 package in an unconnected pair
configuration. These diodes are useful for balanced mixer and
1
2
1
2
SINGLE
MA4E2054A-287T
MA4E2054A-1146T
SERIES PAIR
MA4E2054B-287T
MA4E2054B-1146T
detector voltage doubler circuits.
Applications for the
MA4E2054 series include VSAT and DBS mixers. The small
diode package size and low cost make them attractive for use in
RF tag applications for identification and toll collection.
3
3
The part number consists of the base chip (MA4E2054),
followed by the wiring configuration (A, B, C, D, E, omit for
SOD-323), the package style (287, 1068, 1141, 1146) and a “T”
for tape and reel.
1
2
1
2
SERIES PAIR
MA4E2054D-287T
MA4E2054D-1146T
SINGLE
MA4E2054C-287T
MA4E2054C-1146T
The MA4E2054-1141T is available only in the SOD-323
package style. The MA4E2054A , B, C, D are available in both
the SOT-23 and SOT-323 package styles. The MA4E2054E is
available only in the SOT-143 package style.
4
3
1
2
1
2
SINGLE
MA4E2054-1141T
UNCONNECTED PAIR
MA4E2054E-1068T
Specifications subject to change without notice.
V 4.0
1
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Surface Mount Low Barrier X-Band Schottky Diodes
Maximum Ratings
MA4E2054 Series
Parameter
Unit
ºC
ºC
mW
V
mA
ºC
Values
-65 to +125
Operating Temperature
Storage Temperature
Incident RF Power (CW)
Reverse Voltage @ 25ºC
Forward Current
-65 to +125
751
3
20
Soldering Temperature
+260 for 5 sec.
1. At 25°C junction temperature. Derate linearly to zero watts at 125°C case temperature.
Electrical Specifications @ +25°C
Parameter
Condition
IR = 10 mA
VR = 1 V
Symbol
Specification
Breakdown Voltage
Reverse Leakage Current
Reverse Leakage Current
Total Capacitance
VB
IR
3.0 V min.
100 nA max.
500 nA max.
0.30 pF max.
VR = 3 V
IR
VR = 0 V
CT
Dynamic Resistance2
Forward Voltage
IF = 10 mA
IF = 1 mA
RD
VF
17 Ohms max.
250 mV min.
Forward Voltage Difference1
IF = 1 mA
20 mV max.
∆VF
1. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.
26
2. RD = RS + RJ where RJ
=
IF (in mA)
Typical RF Performance @ +25°C
Parameter
Conditions
Typical Value
Mixer Noise Figure1
f = 9.375 GHz
5.7 dB (SSB)
IF Impedance
IF = 30 MHz
200 ohms
-55 dBm
Tangential Signal
Sensitivity2
IF = 20 mA
BW = 2 MHz
Detector Output
RL = 100K Ohms
IF = 20 µA
RL = 1M Ohm
20 mV
20 mV
Voltage at -30 dBm2
Detector Output
1. Fixture tuned to 9.375 GHz.
2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.
Spice Model Parameters
IS = 3 x 10-8 A
RS = 11Ω
M = 0.50
EG = 0.69 eV
BV = 5.0 V
N = 1.05
TT = 0 S
IBV = 1 x 10 -5 A
Cj(0) = 0.10 x 10 -12 pF
Cpar = 0.11 x 10 -12 pF
VJ = 0.40 V
Specifications subject to change without notice.
V 4.0
2
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Surface Mount Low Barrier X-Band Schottky Diodes
Circuit Models
MA4E2054 Series
SOT-143
SOT-23
.05 pf
C1
C1
C1
LBW
Cp2
.65 nH
6
1
Lg
M
L1
7
1
2
4
3
.13 pf
.01 pf
M
.7 nH
3
Cp3
Cp1
Cp4
LBW
L1
L1
.013 pf
.015 pf
.65 nH
5
8
2
C1
C1
C1
C1
.13 pf
.01 pf
.05 pf
LBW = 0.08nH, Lg = 0.36nh, L1 = 0.31nH, M = 0.12nH, C1 = 0.01pF,
Cp1 = 0.05pF, CP2 = 0.10pF, Cp3 = 0.05pF, Cp4 = 0.03pF
SOT-323
SOD-323
.05 pf
.05 pf
.6 nH
.47 nH
.02 pf
.47 nH
1
2
1
.04 pf
.06 pf
.2 pf
.02 pf
.2 pf
.6 nH
3
.06 pf
.04 pf
.6 nH
2
.04 pf
.06 pf
.05 pf
(MA4E2054-287T)
Typical Performance Curves @ 25°C
Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode Forward
Biased at 20µA. Untuned Fixture (50Ω)
Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µA. Untuned Fixture at 9.375 GHz
10
10000
1000
100
10
1
- - - - - - 10k ohms
1
________
__ __ __
1M ohm
10k ohms
__ __ __
- - - - - - 1M ohm
__ . . __ . .
5k ohms
0.1
________
5k ohms
100k ohms
0.01
0.1
-50
-40
-30
-20
-10
0
10
20
0
2
4
6
8
10
12
INPUT PO WER (dBm)
FREQUENCY (GHz)
Specifications subject to change without notice.
V 4.0
3
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Surface Mount Low Barrier X-Band Schottky Diodes
MA4E2054 Series
(MA4E2054-287T)
Typical Performance Curves @ 25°C (Cont’d)
Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode at Zero
Bias. Untuned Fixture (50Ω)
10
Detector Output Voltage vs Input Power and
Load Resistance. Diode at Zero Bias. Untuned
Fixture at 9.375 GHz (50Ω)
10000
1000
100
10
________
__ __ __
100k oh
__ . . __ . .
10k oh
- - - - - - 1M ohm
5k ohm s
1
- - - - - - 1M ohm
________
100k ohm s
0.1
1
__ __ __
10k ohm s
0.1
__ . . __ . .
5k ohm s
0.01
0.01
0
2
4
6
8
10
12
-40
-30
-20
-10
0
10
FR EQU EN C Y (GH z)
IN PU T PO W E R (dB m )
Forward Current vs Forward Voltage
and Temperature
Tuned Fixture
9
10
1
8
7
6
5
4
3
+ 125o
C
0.1
0.01
25o
C
-50o
250
C
0.01
0.1
1
10
0
50
100
150
200
300
350
400
450
500
LO PO W ER (m W )
VF (m V)
Typical Scattering Parameters (S11)
MA4E2054A (packaged in SOT-23), Using a 50 Ohm Intercontinental Test Fixture (no DC bias)
Freq.
GHz
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
-30 dBm
MAG
-3 dBm
0 dBm
3 dBm
PHASE
-7.6
MAG
0.812
0.843
0.807
0.791
0.795
0.755
0.727
0.713
0.696
0.634
0.614
0.547
0.514
0.450
0.430
0.404
0.405
0.391
0.410
0.504
PHASE
-7.0
MAG
0.597
0.632
0.596
0.580
0.579
0.548
0.524
0.502
0.464
0.386
0.354
0.292
0.248
0.235
0.247
0.260
0.294
0.310
0.318
0.394
PHASE
-4.6
MAG
0.387
0.411
0.386
0.383
0.378
0.342
0.318
0.296
0.235
0.167
0.131
0.072
0.041
0.070
0.152
0.218
0.278
0.344
0.343
0.399
PHASE
-0.9
0.993
0.994
0.993
0.997
0.994
0.994
0.992
0.997
0.987
0.971
0.965
0.980
0.974
0.941
0.957
0.969
0.933
0.932
0.943
0.931
-15.1
-21.4
-27.1
-33.2
-41.3
-48.6
-56.5
-66.4
-74.7
-83.1
-96.0
-110.3
-123.7
-138.9
-155.6
-171.5
170.9
152.8
132.2
-14.7
-21.7
-26.0
-31.5
-42.7
-52.2
-58.9
-67.1
-79.8
-88.6
-103.5
-120.1
-137.4
-158.1
-178.8
162.2
143.1
128.2
108.9
-13.9
-22.3
-23.1
-27.6
-45.2
-55.8
-59.5
-67.7
-86.2
-91.4
-107.0
-129.5
-150.8
178.0
150.1
129.9
110.8
97.9
-11.3
-22.4
-16.4
-18.5
-48.6
-60.8
-56.3
-62.6
-94.9
-98.7
-117.2
163.9
145.2
120.6
102.5
92.0
84.4
68.7
83.3
56.9
Specifications subject to change without notice.
V 4.0
4
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Surface Mount Low Barrier X-Band Schottky Diodes
Impedance Plot
MA4E2054 Series
MA4E2054A (packaged in SOT-23)
Using a 50 Ohm Intercontinental Test Fixture (no DC bias)
-30 dBm
Fstop=12.5 GHz
-3 dBm
0 dBm
+3 dBm
Fstart=0.5 GHz
Case Styles
SOT-23
SOT-23 (Case 287)
INCHES
MILLIMETERS
DIM.
A
MIN.
MAX.
0.048
0.008
0.040
0.020
0.006
0.119
0.056
MIN.
MAX.
1.22
0.20
1.00
0.50
0.15
3.00
1.40
B
F
C
D
E
N
A
D
0.013
0.003
0.110
0.047
0.35
0.08
2.80
1.20
B
E
F
M
G
L
K
G
H
J
0.037 typical
0.075 typical
0.103
0.024
0.95 typical
1.90 typical
2.60
0.60
H
C
K
J
L
DIM.
M
N
GRADIENT
10° max.1
2° . . .30°
Note:
1. Applicable on all sides
Specifications subject to change without notice.
V 4.0
5
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Surface Mount Low Barrier X-Band Schottky Diodes
Case Styles
MA4E2054 Series
SOT-143
SOT-143 (Case 1068)
INCHES
MIN.
MILLIMETERS
DIM.
A
MAX.
0.044
0.044
0.040
0.035
0.020
0.006
0.119
0.056
MIN.
MAX.
1.10
1.10
1.00
0.90
0.50
0.15
3.00
1.40
G
J
B
P
A
C
D
E
0.030
0.013
0.003
0.110
0.047
0.75
0.35
0.08
2.80
1.20
B
F
N
H
L
F
G
H
J
M
E
D
C
0.075 typical
0.075 typical
0.103
0.024
1.90 typical
1.90 typical
2.6
0.6
K
K
L
M
DIM.
N
P
GRADIENT
10° max.1
2° . . .30°
Note:
1. Applicable on all sides
SOT-323
SOT-323 (Case 1146)
INCHES
MILLIMETERS
A
E
DIM.
A
MIN.
0.063
0.045
0.079
0.047
0.008
0.031
MAX.
0.087
0.053
0.087
0.055
0.016
0.039
0.004
0.006
0.010
MIN.
1.6
MAX.
H
2.2
1.35
2.2
J
B
1.15
2.0
C
10°
D
1.2
1.4
M AX .
C
B
E
0.2
0.4
F
0.8
1.0
G
G
H
0.1
0.003
0.004
0.08
0.1
0.15
0.25
F
J
D
SOD-323
SOD-323 (Case 1141)
INCHES
MILLIMETERS
DIM.
A
MIN.
MAX.
0.043
0.004
0.008
0.016
0.006
0.075
0.057
0.106
MIN.
MAX.
C
F
E
1.1
0.1
B
D
C
0.2
G
D
0.010
0.003
0.063
0.045
0.091
0.25
0.08
1.6
0.4
E
0.15
1.9
H
F
B
G
H
1.15
2.3
1.45
2.7
A
Specifications subject to change without notice.
V 4.0
6
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
MA4E2054 Series
Low Barrier Schottky
Single Junction Chip
Package Outlines
Features
•
•
Low IR (<100 nA @ 1V, <500 nA @ 3V)
Designed for High Volume, Low Cost Detector and Mixer
Applications
Low Noise Figure: 5.7 dB (SSB) at X-Band
High Detector Sensitivity: -55 dBm TSS
Low Capacitance: 0.13 pF
MA4E2054
Typ.
0.014”
0.36
•
•
•
•
Low 1/F Noise
Description
The MA4E2054 diode is a low barrier, n-type, silicon Schottky
device. It is useful as a high performance mixer or detector
diode at frequencies from VHF through X-band. The 0.004-
inch diameter gold bond pads and sturdy construction allow you
to use these chips in automatic assembly processes.
Typ.
0.014”
Maximum Ratings
Parameter
Symbol
TOP
TSTG
PT
Unit
ºC
Values
-65 to
-65 to
751
Operating Temperature
Storage Temperature
Incident RF Power (CW)
Reverse Voltage @ 25ºC
Forward Current @ 25°C
inches
mm
ºC
Typ.
0.014”
0.10
mW
V
VR
3
IF
mA
20
1. At 25°C die temperature. Derate linearly to zero watts at 150°C.
Electrical Specifications @ +25°C
Typical RF Performance @ +25°C
Parameter
Breakdown Voltage
Reverse Leakage
Current
Condition
IR = 10 µA
VR = 1 V
Symbol
Specification
3.0 V min.
100 nA max.
SOT-23 Package
Parameter
Mixer Noise Figure1
VB
IR
Conditions
f = 9.375 GHz
LO = 0 dBm
IF = 30 MHz
Typical Value
5.7 dB (SSB)
Reverse Leakage
Current
Total Capacitance
VR = 3 V
IR
500 nA max.
0.13 pF max.
17 Ohms max.
IF Impedance
Tangential Signal
Sensitivity2
200 ohms
-55 dBm
VR = 0
f = 1 MHz
IF = 10 mA
CT
RD
VF
IF = 20 µA
BW = 2 MHz
Video NF = 1.5 dB
RL = 100K Ohms
IF = 20 µA
Dynamic
Resistance1
Forward Voltage
IF = 1 mA
26
250 mV min.
350 mV max.
Detector Output
Voltage at -30 dBm2
20 mV
20 mV
Detector Output
Voltage at -30 dBm2
RL = 1M Ohm
Zero Bias
1. RD = RS + RJ where RJ =
IF (in mA)
Specifications subject to change without notice.
V 4.0
7
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Low Barrier Schottky Single Junction Chip
MA4E2054 Series
Circuit Model (Chip)
Spice Model Parameters
IS = 3 x 10-8 A
RS = 11Ω
M = 0.50
EG = 0.69 eV
BV = 5.0 V
0.06 pF
N = 1.05
TT = 0 S
IBV = 1 x 10 -5 A
R
S
R
J
Cj(0) = 0.10 x 10 -12 pF
VJ = 0.40 V
11Ω
Recommended Assembly
0.04 pF
1. One mil diameter gold wire.
2. Ball bond
3. Conductive silver epoxy for die mounting.
Typical Performance Curves @ +25°C
(Packaged in SOT-23)
Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µA. Untuned Fixture at 9.375 GHz
10000
Forward Current vs Forward Voltage
and Temperature
10
1000
100
1
+125o
C
10
- - - - - - 10k ohm s
1
0.1
0.1
________
1M ohm
5k ohm s
25o
C
__ __ __
-50o
250
C
0.01
0.01
-50
-40
-30
-20
-10
0
10
20
0
50
100
150
200
300
350
400
450
500
VF (mV)
INPU T PO WER (dBm)
Detector Output Voltage vs Input Power and
Load Resistance. Diode at Zero Bias.
Untuned Fixture at 9.375 GHz
Noise Figure vs LO Power at 9.375 GHz,
Tuned Fixture
10000
1000
100
10
9
8
7
6
5
4
3
- - - - - - 1M ohm
________
100k ohms
1
__ __ __
10k ohms
0.1
__ . . __ . .
5k ohms
0.01
-40
-30
-20
-10
0
10
0.01
0.1
1
10
IN PUT POW ER (dBm)
LO POW ER (mW)
Specifications subject to change without notice.
V 4.0
8
ꢀ North America: Tel. (800) 366-2266, Fax (800) 618-8883
ꢀ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
ꢀ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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