MA4E2502H-1246 [TE]
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes; SURMOUNTTM低，中，高垒硅肖特基二极管
| 型号： | MA4E2502H-1246 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
Features
The MA4E2502 Family of Surmount Schottky di-
odes are recommended for use in microwave cir-
cuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors, and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Sur-
mount diode, which can be connected to a hard or
soft substrate circuit with solder.
•
•
•
•
Extremely Low Parasitic Capitance and Induc-
tance
Surface Mountable in Microwavable Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
•
Lower Susceptibility to ESD Damage
Case Style 1246
Description and Applications
The MA4E2502 SURMOUNTTM Series Diodes are
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, micro-
strip transmission medium. The combination of
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
INCHES
MIN.
MILLIMETERS
DIM
MAX.
0.0465
0.0189
0.0080
0.0148
0.0148
MIN.
1.130
0.430
0.102
0.325
0.325
MAX.
1.180
0.480
0.203
0.375
0.375
A
B
0.0445
0.0169
0.0040
0.0128
0.0128
C
D Sq.
E
The multilayer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
Electrical Specifications @ 25°C
Rt Slope Resistance
(Vf1-Vf2)/(10.5mA-9.5mA)
(Ω)
Model
Number
Recommended Vf @ 1 mA Vb @ 10 uA
Ct @ 0 V
(pF)
Type
Freq. Range
(mV)
(V)
330 Max
300 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
16 Typ
20 Max
MA4E2502L
MA4E2502M
MA4E2502H
Low Barrier
DC - 18 GHz
3 Min
5 Typ
Medium
Barrier
470 Max
420 Typ
0.12 Max
0.10 Typ
12 Typ
18 Max
DC - 18 GHz
DC - 18 GHz
700 Max
650 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
11 Typ
15 Max
High Barrier
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
Die Bonding
All semiconductor chips should be handled with
care to avoid damage or contamination from per-
spiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recom-
mended for individual components. The top sur-
face of the die has a protective polyimide coating to
minimize damage.
Die attach for these devices is made simple
through the use of surface mount die attach tech-
nology. Mounting pads are conveniently located on
the bottom surface of these devices, and are oppo-
site the active junction. The devices are well suited
for high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage. Die attach with Electrically
Conductive Silver Epoxy is Not Recommended.
The rugged construction of these Surmount de-
vices allows the use of standard handling and die
attach techniques. It is important to note that in-
dustry standard electrostatic discharge (ESD) con-
trol is required at all times, due to the sensitive na-
ture of Schottky junctions.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When solder-
ing to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must Not be made one at a time, creating un-
equal heat flow and thermal stress. Solder reflow
should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
die attach is completed.
Bulk handling should insure that abrasion and me-
chanical shock are minimized.
Absolute Maximum Ratings @ 25°C
(unless otherwise noted) 1
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
Absolute Maximum
-40°C to +125°C
-40°C to +150°C
+175°C
20 mA
Reverse Voltage
5 V
RF C.W. Incident Power
RF & DC Dissipated Power
Electrostatic Discharge
+20 dBm
50 mW
Class 0
2
( ESD ) Classification
2. Human Body Model
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
2
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
Applications Section
MA4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
10
1
-20 dBm
-10 dBm
0 dBm
+10 dBm
+20 dBm
0.1
0.01
8
11
14
17
20
23
Frequency (GHz)
MA4E2502L-1246
Input Power (dBm) vs. Output Voltage (V)
10
1
8 GHz
18 GHz
23 GHz
0.1
0.01
-20
-15
-10
-5
0
5
10
Input Power (dBm)
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
3
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
• North America Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
MA4E2502L Low Barrier SPICE PARAMETERS
Is
(nA)
Rs
(Ω)
Cj0
(pF)
Ik
(mA)
Cjpar
(pF)
Vj
(V)
BV
(V)
IBV
(mA)
N
M
FC
26
12.8
1.20
1.0 E-2
0.5
14
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2502M Medium Barrier SPICE PARAMETERS
Is
(mA)
Rs
(Ω)
Cj0
(pF)
Ik
(mA)
Cjpar
(pF)
Vj
(V)
BV
(V)
IBV
(mA)
N
M
FC
5 E-1
9.6
1.20
1.0 E-02
0.5
10
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2502H High Barrier SPICE PARAMETERS
Is
(mA)
Rs
(Ω)
Cj0
(pF)
Ik
(mA)
Cjpar
(pF)
Vj
(V)
BV
(V)
IBV
(mA)
N
M
FC
5.7 E-1
6.5
1.20
1.0 E-02
0.5
4
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
Circuit Mounting Dimensions (Inches)
4
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
Ordering Information
Part Number
MA4E2502L-1246W
MA4E2502L-1246
Package
Wafer on Frame
Die in Carrier
MA4E2502L-1246T
MADS-002502-1246LP
MA4E2502M-1246W
MA4E2502M-1246
MA4E2502M-1246T
MADS-002502-1246MP
MA4E2502H-1246W
MA4E2502H-1246
Surf Tape on Reel
Pocket Tape on Reel
Wafer on Frame
Die in Carrier
Surf Tape on Reel
Pocket Tape on Reel
Wafer on Frame
Die in Carrier
MA4E2502H-1246T
MADS-002502-1246HP
Surf Tape on Reel
Pocket Tape on Reel
MA4E2502 Diode Schematic
Schematic Values
Ls
Rs
Rj
Ct
Model Number
(nH)
(Ω)
(Ω)
(pF)
MA4E2502L
0.8
12.8
26 / Idc (mA)
0.10
MA4E2502M
MA4E2502H
0.8
0.8
9.6
6.5
26 / Idc (mA)
26 / Idc (mA)
0.10
0.10
5
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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