MA4E2544L-1282T [TE]
SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series; SURMOUNTTM低垒硅肖特基跨接四系列
| 型号： | MA4E2544L-1282T |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series |
| 文件： | 总4页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SURMOUNTTM Low Barrier
Silicon Schottky Cross-Over Quad Series
V 1.00
Features
Case Style 1282 - Topview
n
Extremely Low Parasitic Capitance and Inductance
A
n
Surface Mountable in Microwave Circuits, No
Wirebonds Required
n
n
n
Rugged HMIC Construction with Polyimide Scratch
Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
Lower Susceptibility to ESD Damage
B
Description
The MA4E2544L-1282 Series SurMountTM Low Barrier,
Silicon Schottky Cross-Over Quad Diodes are fabricated with
the patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of silicon
and glass allows HMIC devices to have excellent loss and
power dissipation characteristics in a low profile, reliable
device.
C
E
D
D
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
Millimeters
Inches
Dim
A
Min.
Max.
Min.
Max.
0.0445
0.0465
0.0465
0.0080
0.0148
0.0148
1.130
1.130
0.102
0.325
0.325
1.180
B
0.0445
0.0040
0.0128
0.0128
1.180
0.203
0.375
0.375
C
D Sq.
E
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300 °C.
Equivalent Circuit
The “ 0505 ” outline allows for Surface Mount placement and
multi- functional polarity orientations.
Applications
The MA4E2544L-1282 Series SurMountTM Low Barrier
Silicon Schottky Cross-Over Quad Diodes are recommended
for use in microwave circuits through Ku band frequencies for
lower power applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes with the
corresponding Surmount diode, which can be connected to a
hard or soft substrate circuit with solder.
1
SurMountTM Low Barrier Silicon Schottky Diodes: Cross-Over Quad Series
MA4E2544L-1282
V 1.00
Electrical Specifications @ 25 °C (Measured as Single Diodes)
Model
Number
Type Recommended Vf @ 1 mA Ct @ 0 V
Rt Slope Resistance
( Vf1 - Vf2 )/(10.5 mA-9.5 mA )
( W )
Frequency
Range
( mV )
( pF )
MA4E2544L-1282
Low
DC - 18 GHz
330 Max
300 Typ
0.22 Max
0.15 Typ
16 Typ
Barrier
20 Max
Rt is the dynamic slope resistance where
Max Forward Voltage Difference DVf @ 1 mA: 10 mV
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is
the Ohmic Resistance
Die Bonding
Handling
Die attach for these devices is made simple through the use
of surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these
devices, and are opposite the active junction. The devices
are well suited for higher temperature solder attachment
onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage.
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
The rugged construction of these SurMount devices allows the
use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky junctions.
Die Attach
For Hard substrates, we recommend utilizing a vacuum tip
and force of 60 to 100 grams applied uniformly to the top
surface of the device, using a hot gas bonder with equal
heat applied across the bottom mounting pads of the device.
When soldering to soft substrates, it is recommended to use
a lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are aligned with
the circuit board mounting pads. Reflow the solder paste by
applying Equal heat to the circuit at both die-mounting
pads. The solder joint must Not be made one at a time,
creating un-equal heat flow and thermal stress. Solder
reflow should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be visually
inspected through the die after die attach is completed.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Absolute Maximum Ratings1
@ +25 °C
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
Value
-40 °C to +150 °C
-40 °C to +150 °C
+175 °C
20 mA
5 V
Reverse Voltage (10 mA)
RF C.W. Incident Power
RF & DC Dissipated Power
+ 20 dBm
50 mW
1. Exceeding any of these values may result in permanent
damage
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SurMountTM Low Barrier Silicon Schottky Diodes: Cross-Over Quad Series
MA4E2544L-1282
V 1.00
MA4E2544L-1282 Low Barrier SPICE PARAMETERS (per Diode)*
Is
(nA)
26
Rs
( W )
12.8
N
Cj0
( pF )
1.0 E-2
M
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
BV
(V)
5.0
IBV
(mA)
1.0 E-2
1.20
0.5
0.5
* Spice parameters (per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.020
0.020
0.013
0.013
0.020
0.020
Ordering Information
Part Number
Package
MA4E2544L-1282W
Wafer on Frame
MA4E2544L-1282
MA4E2544L-1282T
Die in Carrier
Tape/Reel
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SurMountTM Low Barrier Silicon Schottky Diodes: Cross-Over Quad Series
MA4E2544L-1282
V 1.00
MA4E2544L-1282 Schematic Per Diode
Ct
Ls
Rs
Rj
Average Schematic Values per Diode
Model
Number
Ls (nH)
Ct ( pF )
0.15
Rs ( W )
Rj ( W )
MA4E2544L-1282
0.2
12.8
26 / Idc
4
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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