MA4GC6774 [TE]
77 GHz GaAs SP3T PIN Diode Switch; 77 GHz的砷化镓SP3T PIN二极管开关
| 型号： | MA4GC6774 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 77 GHz GaAs SP3T PIN Diode Switch |
| 文件： | 总3页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
77 GHz GaAs SP3T
PIN Diode Switch
V 2.00
Features
Applications
This highly reliable, very low parasitic SP3T is useable
through higher millimeter frequencies for exceptional loss to
isolation ratio and 2 nS switching speed performance. Typi-
cal Applications include Transceivers, Automotive Cruise
Control Systems, and Radiometry Switch Functions.
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77 Ghz Frequency Response
1.4 dB Insertion Loss
24 dB Isolation
2nS Switching Speed
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Automated Pick and Place Insertion
Qualified for Automotive Environments
Absolute Maximum Ratings1
Description
The MA4CG6774 is a 77 GHz SP3T Switch made from
Gallium Arsenide PIN Diodes, and semi-insulating GaAs Substrate
designed for Automotive Applications. These diodes are fabricated
on OMCVD epitaxial wafers using a process designed for
repeatable electrical characteristics and extremely low parasitics.
These Diodes are fully passivated with Silicon Nitride and have an
additional layer of Polymide for scratch protection. This protective
coating prevents damage to the junction during automated or
manual handling. These devices are suitable for pick and place
insertion.
Parameter
Value
Operating Temperature
Storage Temperature
D.C. Bias Current
-25 °C to +85 °C
-65 °C to +150 °C
+15 mA per Diode
D. C. Reverse Bias Voltage
RF C.W. Incident Power
Mounting Temperature
-15 Volts @ -10 mA
+ 23 dBm C.W.
Each RF Port contains DC blocking Capacitors and a D.C. Bias
Network consisting of High Impedance Lines and RF bypass
capacitors. This device has 100 um square gold plated bonding
pads at all RF and DC ports. RF and DC Ground Backside Gold
Plating allows conventional chip bonding techniques using
80Au/20Sn Solder, Indalloy Solder, or Electrically Conductive
Silver Epoxy.
+300 °C for 10 seconds
1. Exceeding any of these values may result in permanent
damage
Outline Drawing
Dim. Are in mm
77 GHz GaAs SP3T PIN Diode Switch
Electrical Specifications, TA = + 25 °C
MA4GC6774
V 2.00
Parameters
Units
Minimum
Typical
Maximum
Bias Conditions
+10 mA per Diode
Specification Specification Specification
V
1.15
-200
1.25
-20
1.40
Forward Voltage, +Vf
nA
-15 V per Diode
Leakage Current, -Ir
DC Slope Resistance
4.8
6.4
W
+10 mA & +11 mA per Diode
Reference Millimeter Wave Data @ F = 77 GHz, TA = + 25 °C
MA4GC6774
Parameters
Conditions
Avg.
Bias Condition
Comments
-5 V
+10 mA
(J1-J2)
(J1-J3)
(J1-J4)
-1.4 dB
-1.4 dB
-1.4 dB
B2
B3
B4
B3 & B4
B2 & B4
B2 & B3
RF Input Power = 0 dBm
Insertion Loss
(J1-J2)
(J1-J3)
(J1-J4)
(J1-J2)
(J1-J3)
(J1-J4)
-24 dB
-24 dB
-24 dB
-14 dB
-14 dB
-14 dB
B3
B4
B3
B2
B2 & B4
B2 & B3
B2 & B4
B3 & B4
B2 & B4
B2 & B3
RF Input Power = 0 dBm
Isolation
VSWR
RF Input Power = 0 dBm
Low Loss Condition Only
(Reflective in Isolation Mode)
B3
B4
Switching Speed
10% - 90%
RF Voltage
2 nS
0 to 5 V TTL
0 to 5 V TTL
Switching Speed is Driver Dependent
DC to Millimeter Wave State Truth Table for the MA4GC6774
DC Bias Conditions
Millimeter Wave State
B2
B3
B4
J1-J2
J1-J3
J1-J4
-5 Volts
+10 mA
+10 mA
Low Loss
Isolation
Isolation
+10 mA
+10 mA
-5 Volts
+10 mA
+10 mA
-5 Volts
Isolation
Isolation
Low Loss
Isolation
Isolation
Low Loss
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n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
77 GHz GaAs SP3T PIN Diode Switch
Assembly Considerations
MA4GC6774
V 2.00
Solder Die Attach
The following precautions should be observed for successful
assembly of the die.
All die attach and bonding methods should be compatible with
gold metal. Solder which does not scavenge gold, such as
80 Au/20 Sn or Indalloy #2 is recommended. Do not expose
die to a temperature greater than 300 °C for more than
10 seconds.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Electrically Conductive Expoxy
Die Attach
Assembly can be preheated to approximately 125 °C. Use a
controlled thickness of approximately 2 mils for best electrical
conductivity and lower thermal resistance. A thin epoxy fillet
should be visible around the perimeter of the chip after place-
ment. Cure epoxy per manufacturer’s schedule. For extended
cure times, temperatures should be kept below 150 °C.
Electro-Static Sensitivity
The MA4GC Series of GaAs PIN Diode Switches are ESD,
Class 1 Sensitive. The proper ESD handling procedures must
be used.
General Handling
Wire / Ribbon Bonding
The protective polymer coating on the active areas of these die
provides scratch and impact protection, particularly for the
metal airbridge which contacts the diode’s anode. Die should
primarily be handled with vacuum pickups, or alternatively
with plastic tweezers.
Wedge Thermo compression bonding may be used to attach
ribbons to the RF bonding pads. Gold Ribbons should be
1/4 by 3 mil sq. for lowest inductance. The same 1/4 by 3 mil
sq. gold ribbon or 1 mil dia. Gold Wire is recommended for all
DC pads.
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n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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