MA4GP907-T [TE]

GaAs Flip-Chip PIN Diodes; 砷化镓倒装芯片PIN二极管
MA4GP907-T
型号: MA4GP907-T
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs Flip-Chip PIN Diodes
砷化镓倒装芯片PIN二极管

二极管 开关 测试
文件: 总4页 (文件大小:151K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
V 5.00  
GaAs Flip-Chip PIN Diodes  
Features  
Package Outline  
Top View Is Shown With Diode Junction Up  
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Low Series Resistance, 4 W  
Ultra Low Capacitance, 25 fF  
High Switching Cutoff Frequency, 40 GHz  
2 Nanosecond Switching Speed  
Can be Driven by Buffered TTL  
Silicon Nitride Passivation  
Cathode  
Polyimide Scratch Protection  
Description  
M/A-COM's MA4GP907 is a Gallium Arsenide Flip-Chip PIN  
diode.These devices are fabricated on OMCVD epitaxial  
wafers using a process designed for high device uniformity and  
extremely low parasitics. The diodes exhibit an extremely low  
RC Product, ( 0.1 ps ) and 2 nS switching characteristics. They  
are fully passivated with silicon nitride and have an additional  
layer of a polymer for scratch protection.The protective  
coatings prevent damage to the junction and the anode  
airbridge during handling.  
Applications  
The 25 fF capacitance of the MA4GP907 allows use through  
mmwave switch and switched phase shifter applications. This  
diode is designed for use in pulsed or CW applications, where  
single digit nS switching speed is required. For surface mount  
assembly, the low capacitance of the MA4GP907 makes it  
ideal for use in microwave multithrow switch assemblies,  
where the series capacitance of each “off” port adversely loads  
the input and affects VSWR.  
Ordering Information  
Part Number  
MA4GP907  
Packaging  
Die in Carrier  
MA4GP907-T  
MA4GP907-W  
Tape/Reel  
Wafer on Frame  
1
GaAs Flip-Chip PIN Diodes  
MA4GP907  
V5.00  
Electrical Specifications and RF Data @TA = 25 °C  
Parameters and Test Conditions  
Symbol Units  
1 MHz & DC  
Specifications  
10 GHz Reference  
Data 1,2  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
0.025  
Total Capacitance at -10 V  
Ct  
Rs  
Vf  
pF  
Ohms  
Volts  
Volts  
nS  
0.025 0.030  
4.2  
Forward Resistance at +10mA  
Forward Voltage at +10mA  
1.33  
-50  
1.45  
-45  
Reverse Breakdown Voltage at -10uA3  
Vb  
Switching Speed (10 to 90% RF Voltage)4  
& (90 to 10% RF Voltage)4  
2
Trise  
Tfall  
Notes:  
1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.  
2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line  
at 10 GHz.  
3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.  
4. Switching speed is measured between 10% and 90% or 90% to 10% RF Voltage for a Single Series Mounted Diode.  
Driver delay is Not included.  
Single Series Diode Insertion Loss vs Frequency  
I. Loss @5mA  
I. Loss @15mA  
I. Loss @50mA  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40  
Frequency (GHz)  
2
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
GaAs Flip-Chip PIN Diodes  
MA4GP907  
V5.00  
Single Series Diode Return Loss vs Frequency  
R. Loss @5mA  
R. Loss @15mA  
R. Loss @50mA  
0.0  
-5.0  
-10.0  
-15.0  
-20.0  
-25.0  
-30.0  
-35.0  
-40.0  
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40  
Frequency (GHz)  
Single Series Diode Isolation vs Frequency  
Isolation @ -10V  
Isolation @ 0V  
0.0  
-5.0  
-10.0  
-15.0  
-20.0  
-25.0  
-30.0  
-35.0  
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40  
Frequency ( GHz )  
3
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
GaAs Flip-Chip PIN Diodes  
Device Installation Procedures  
MA4GP907  
V 5.00  
Assembly Requirements Using  
Electrically Conductive Ag Epoxy  
and Solder  
The following guidelines should be observed to avoid damag-  
ing GaAs Flip-Chips.  
These chips are designed to be inserted onto hard or soft sub-  
strates with the junction side down. They should be mounted  
onto silkscreened circuits using Electrically Conductive Ag  
Epoxy, approximately 1-2 mils in thickness and cured at ap-  
proximately 90 °C to 150 °C per manufacturer’s schedule.  
For extended cure times > 30 minutes, temperatures must be  
below 200 °C.  
Cleanliness  
These devices should be handled in a clean environment.  
Do Not attempt to clean die After installation.  
Static Sensitivity  
Gallium arsenide PIN diodes are ESD sensitive and can be  
damaged by static electricity. Proper ESD techniques should  
be used when handling these devices. These devices are rated  
Class 0, (0-199 V) per HBM MIL-STD-883, method 3015.7  
[C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die  
pass 50V ESD, they must be handled in a static-free environment.  
Sn Rich Solders are not recommended due to the Tungsten  
Metallization scheme beneath the gold contacts. Indalloy or  
80 Au/20 Sn Solders are acceptable. Maximum soldering  
temperature must be < 300 °C for < 10 sec.  
General Handling  
Circuit Mounting Dimensions  
(Inches)  
These devices have a polymer layer which provides scratch  
protection for the junction area and the anode air bridge. Die  
can be handled with plastic tweezers or picked and placed  
with a #27 tip vacuum pencil.  
0.013  
Absolute Maximum Ratings5  
Parameter  
Maximum Ratings  
-65 °C to +125 °C  
-65 °C to +150 °C  
50 mW  
0.012  
(2) PL  
Operating Temperature  
Storage Temperature  
Dissipated RF & DC Power  
RF C.W. Incident Power  
Mounting Temperature  
+ 23 dBm C.W.  
0.008  
(2) PL  
+300 °C for 10 seconds  
5. Exceeding any of these values may result in permanent  
damage  
Ordering Information  
Part Number  
Package  
MA4GP907  
Die in Carrier  
MA4GP907-T  
MA4GP907-W  
Tape and Reel  
Wafer on Frame  
4
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  

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