MA4P274-1225T [TE]
Quad PIN Diode p Attenuator 5 .3000 MHz; 四PIN二极管衰减器P 5 0.3000兆赫
| 型号： | MA4P274-1225T |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Quad PIN Diode p Attenuator 5 .3000 MHz |
| 文件： | 总10页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Quad PIN Diode p Attenuator
5 –3000 MHz
Features
Package Outline (Topview)
n
n
n
n
n
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4 PIN Diodes in SOT-25 Plastic Package
Externally Selectable Bias and RF Match Network
5 – 3,000 MHz Useable Frequency Band
+ 43 dBm IP3@ 1 GHz (50 W)
1.0 dB Loss @ 1 GHz (50 W)
30 dB Attenuation @ 1 GHz (50 W)
3
2
1
Topview
Description
4
5
M/A-COM's MA4P274-1225 is a wideband, lower insertion
loss, high IP3, Quad PIN Diode p Attenuator in a low-cost,
surface mount SOT-25 package. Four PIN Diodes in one
package reduce design parasitics and improve circuit
density.
PIN Configuration
PIN Function
PIN
4
Function
Shunt 1 Bias
Shunt 2 Bias
Applications
1
2
RF In
These PIN Diode Attenuators perform well where RF
Signal Amplitude Control is required in 50 W Handset
Circuits and 75 W Broadband CATV Systems. Exceptional
Insertion Loss, Attenuation Range, and IP3 at <10 mA bias
make these devices suitable for better power level control in
RF Amplifiers.
Series
Bias
5
3
RF Out
Guaranteed Electrical Specifications: @ +25 °C
Parameter
Ct @ 0 V
Rs @ 1 mA
Rs @ 10 mA
Vb
Test Conditions
100 MHz
100 MHz
100 MHz
D.C.
Units
Min.
Typ.
0.45
13
Max.
pF
0.50
18
W
W
V
2.3
3.0
125
150
1000
Minority Carrier
Lifetime
( 50 % - 90 % ) Voltage
If = + 10mA, Ir = - 6mA Pulse
@ 100 kHz Sq Wave
nS
2000
100
Power
Dissipation
D.C. and F = 5 – 3,000 MHz
Derate linearly to 0 mW at 125 C
Using 1,000 deg-C/W
mW
Thermal Resistance
RF Incident
Power
F = 5 – 3,000 MHz
Vshunt 1 & 2 Diode Bias = 0.75 V
Vseries Diode Bias = 0 to 20 V
dBm
+ 20
Quad PIN Diode p Attenuator
MA4P274-1225T
Functional Schematic
PIN 2:
Series Bias
PIN 3:
RF Out
PIN 1:
RF In
PIN 4 :
Shunt 1 Bias
PIN 5 :
Shunt 2 Bias
Case Style: SOT 25
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Millimeters
Dim
Inches
-65 °C to +125 °C
-65 °C to +150 °C
Operating Temperature
Min.
Max.
.1181
.1181
.0512
.0669
Min.
2.80
2.6
Max.
3.10
3.00
1.30
1.70
Storage Temperature,
No Dissipated Power
A
B
C
D
E
F
.1103
.1023
-100 V
DC Voltage at Temperature
Extremes
0.0355
0.0591
0.9
1.5
75 mA
DC Current at 25 °C
.0374 REF.
0.95 REF.
+235 °C for 10 seconds
Mounting Temperature
.0138
.0031
.0002
.0138
.0197
0.0079
.0059
.0216
.35
.08
.05
.35
.50
0.2
.15
.55
1. Exceeding any one or combination of these limits may cause
permanent damage.
G
H
J
1. Dimensions do not include mold peaks, protrusion or
gate burrs which shall not exceed 0.0098 in.
(.25) mm per side.
2. Leads Coplanarity should be 0.003 (0.08) mm Max.
2
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
MA4P274-1225T
Typical 50 W SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5 – 1,000 MHz
+ 3 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-2.0
Insertion Loss
Return Loss
Attenuation
Input IP3
5 – 1,000 MHz
5 – 1,000 MHz
5 – 1,000 MHz
5 – 1,000 MHz
5 – 1,000 MHz
5 – 1,000 MHz
5 – 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
dB
-1.0
-10
-29
43
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
dBm
dBm
dBm
dBm
Input IP3
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
43
Input IP3
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
43
Input IP3
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
33
Settling Time
5 – 1,000 MHz
5 – 1,000 MHz
Within 1 dB of Final Attenuation Value
F = 1 GHz
uS
3
RF C.W. Incident
Power
0 – 20 V Series Diode Bias
and 0.75 V Shunt 1 and 2 Bias
dBm
+ 20
Typical 75 W SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5 – 1,000 MHz
+ 2 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-1.1
Insertion Loss
Attenuation
Return Loss
5 – 1,000 MHz
5 – 1,000 MHz
5 – 1,000 MHz
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
dB
dB
-0.6
-27
-10
0 mA / Series Diode
and 1 V Shunt 1 and 2 Bias
F = 1 GHz
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
3
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
MA4P274-1225T
MA4P274-1225 Diode Ct vs
MA4P274-1225 Diode Rs vs I
Frequency @ 0 V
1000
100
10
1.00
100 MHz
4 MHz
900 MHz
1
0.10
0.01
0.10
1.00
I ( mA )
10.00
100.00
1.00
10.00
100.00
F ( MHz )
1000.00
10000.00
MA4P274-1225 Attenuation vs Frequency in
50 Ohms, Shunt Bias = 0.75 V
MA4P274-1225 Return Loss vs Frequency in
50 Ohms, Shunt Bias = 0.75 V
0
-5
Series Diode: 5 V
Series Diode: 10 V
-15
-25
-35
-45
-55
-65
-5
Series Diode: 1 V
Series Diode: 2 V
-10
Series Diode: 3 V
Series Diode: 0 V
Series Diode: 1 V
Series Diode: 0 V
Series Diode: 5
-15
-20
-25
Series Diode: 10 V
50
150
250
350
450
550
MHz
650
750
850
950
50
150
250
350
450
Frequency
550
MHz
650
750
850
950
Frequency
(
)
(
)
LS vs. Frequency @ 10 mA
RS vs. IF @ 100 MHz and 1 GHz
4
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
MA4P274-1225T
MA4P274-1225 IP3 vs Series Voltage,
Vshunt = .075 V
60
55
50
F1 = 1000 MHz, F2 = 1100 MHz
45
40
F1 = 100 MHz, F2 = 110 MHz
35
30
25
20
0
2
4
6
8
10
12
14
16
18
20
Series Diode Voltage ( V )
MA4P274-1225 Insertion Loss vs Frequency in 75
Ohms, Shunt Bias = 1 V
MA4P274-1225 Attenuation vs Frequency in
75 Ohms, Shunt Bias = 1 V
-1.4
-70
-1.2
Series Current per Diode = 2 mA
-60
-1
-50
Series Diode: 0.5 V
Series Diode: 0.7 V
-0.8
-40
Series Current per Diode = 4.5 mA
-0.6
-30
Series Diode: 1 V
-0.4
-0.2
0
-20
Series Diode: 2 V
-10
Series Diode: 3 V
Series Diode: 20 V
20.00
142.50
265.00
387.50
510.00
632.50
755.00
877.50
1000.00
0
20.00
142.50
265.00
387.50
510.00
632.50
755.00
877.50
1000.00
Frequency (MHz)
Frequency (MHz)
5
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
5 - 1,000 MHz Wideband RF Circuit
MA4P274-1225T
10K pF
1 K ohms
PIN 2:
Series Bias
10K pF
10K pF
PIN 3:
RF Out
PIN 1:
RF In
10K pF
X2
1 K ohms
1 K ohms
PIN 4 :
Shunt 1 Bias
PIN 5 :
Shunt 2 Bias
Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage ( increases attenuation ) through an
otherwise connected Common Anode Bias Node.
10 - 1,000 MHz Wideband RF Circuit Parts List
Item
Supplier
Rogers Corporation
Supplier P/N
RO4003 , RO4350
4003 or 4350 Circuit Board
www.rogers-corp.com
4003 ( er = 3.38), 4350 ( er = 3.48 )
Capacitor, 10 K pF
3.2 mm L x 1.6 mm W x 1.15 mm H www.murata.com
Resistor, 1K W
Murata
GRM42-6COH103K25PB
C1001BC42KSA
Piconics
www.piconics.com
1.0 mm L x 0.5 mm w x 0. 25 mm H
6
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
MA4P274-1225T
Series and Shunt Diode Bias Currents as a Function of Vseries and
Vshunt Voltage Using Wideband RF Circuit
(Values shown are PER DIODE )
Vshunt Bias ( V )
Vseries Bias ( V )
Iseries Diode ( mA )
Ishunt Diode ( mA )
0.75
0.75
0
1
0.000
0.106
0.192
0.120
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
2
3
0.443
0.773
1.099
1.426
1.750
2.092
2.424
2.756
3.088
3.421
3.754
4.087
4.410
4.743
5.081
5.406
5.750
6.079
6.413
0.048
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
7
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
MA4P274-1225T
1 – 3 GHz 50 W, Higher Frequency, Lower Tuning Voltage RF Circuit
PIN 2: Series Bias
Vc = 0 – 5 V
0.1 uF
56 pF
100 ohms
330 ohms
22 nH
56 pF
56 pF
22 nH
22 nH
56pF
PIN 3:
RF Out
PIN 1:
RF In
330 ohms
56 pF
680 pF
( 2 X )
1 K ohms
1 K ohms
+ 5 V
PIN 5 :
Shunt 2 Bias
PIN 4 :
Shunt 1 Bias
180 ohms
0.1 uF
180 ohms
Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage through an otherwise connected
Common Anode Bias Node.
8
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
1 - 3 GHz Higher Frequency RF Circuit Parts List
MA4P274-1225T
Item
Supplier
Supplier P/N
4003 or 4350 Circuit Board
Rogers Corporation
RO4003 , RO4350
www.rogers-corp.com
4003 ( er = 3.38), 4350 ( er = 3.48 )
Capacitor, .01 uF, Power Supply Filter Murata
GRM39X7R104K25PB
GRM40COG681K50PB
GRM36COG560K50PB
1.6 mm L x 0.80 mm W x .080 mm H
www.murata.com
Capacitor, 680 pF, Diode RF Bypass
2.0 mm L x 1.5 mm W x .085 mm H
Murata
Murata
Capacitor, 56 pF, D.C. Block,
RF Decoupling
1.0 mm L x 0.5 mm W x 0.5 mm H
Inductor, 22 nH, RF Choke
Coilcraft
www.coilcraft.com
1812SMS-22NJ
C1001BC42KSA
Piconics
Resistor, 100 W
www.piconics.com
1.0 mm L x 0.5 mm w x 0. 25 mm H
Piconics
Piconics
Piconics
C1800BC42KSA
C3300BC42KSA
C1001BC42KSA
Resistor, 180 W
1.0 mm L x 0.5 mm w x 0. 25 mm H
Resistor, 330 W
1.0 mm L x 0.5 mm w x 0. 25 mm H
Resistor, 1K W
1.0 mm L x 0.5 mm w x 0. 25 mm H
9
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode p Attenuator
MA4P274-1225T
Lumped Model of SOT-25, MA4P274-1225 PIN Diode p Quad Attenuator
L
L1
L=0.8 nH
C
C1
C=0.27pF
L
L2
L=0.8 nH
C
Port
Port
C2
P1
P2
C=0.27 pF
Num=1
Num=2
R
R3
C
C3
C=0.27 pF
C
C8
C=0.27 pF
R
R4
R=Rjsh Ohm
R
R2
R=Rjsh Ohm
C
C6
C=0.05pF
C
C5
C=0.05pF
L
L4
L=0.8 nH
R
R1
L
L3
R=Rjse Ohm
C
C7
C
C4
R=Rjse Ohm
L=0.8 nH
C=0.05 pF
C=0.05 pF
C
C
C9
C10
C=0.0003 pF
C=0.0003 pF
Ordering Information
MA4P274-1225 SPICE MODEL
Model Number
Package
MA4P274 -1225
MA4P274 -1225T
Tube
Tape and Reel
Pin Diode Model
NLPINM2
Is=1E-14 A
Vi=0 V
Un=900 cm2/V-sec
Wi=60 um
Rr=1.25 Ohm
Cmin=0.20 pF
Tau=1.0 usec
Rs=0.1 Ohm
Cjo=0.27 pF
Vj=0.7 V
M=0.5
Fc=0.5
Imax=2.5E+6 A/m2
Kf=0
Af=1
Ffe=1
wBV= 150 V
10
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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