MA4P404 [TE]
PIN Diodes for Microwave Switch Designs; PIN二极管微波开关设计
| 型号： | MA4P404 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | PIN Diodes for Microwave Switch Designs |
| 文件： | 总10页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Introduction
This Application Note is intended to provide practical guidance in the selection of PIN Diodes for switch control
circuit functions. Switches, Digital and Analog Attenuators, and Limiters each have unique functions that require
proper device selection. The design difficulty lies within the parametric translation from Diode Specifications, to
the circuit designers’ Microwave Specifications. Diode parametric language such as Vb, Vf, Ct, Rs, τL, θ, must
convert into Insertion Loss, VSWR, Isolation, P1dB, Input IP3, RF Operating Power, RF Power Dissipation, and
D.C. Power Consumption Specification Terminology.
In addition to actual diode parameters, package parasitics play a significant role in determining switch circuit per-
formance. Package capacitance, package inductance, package electrical resistance, and package thermal im-
pedance are extremely important considerations to determine the effective frequency bandwidth and maximum
incident power for reliable switch operation.
The manufacturing methodology dictates the type of diode selection. Surface mount assembly will mandate the
usage of either plastic, HMIC SURMOUNT, or MELF & HiPAX ceramic devices. Chip and Wire ( Hybrid ) manu-
facturing will determine the usage of Cermachips, Flip Chips, or Beam Lead Devices. Schematics for the most
common switch designs: Series-Exclusive, Shunt-Exclusive, and Series-Shunt are outlined below for considera-
tion.
The Decision Making Process for PIN Diode Selection for Microwave Switch Design
The following procedure outlines and Effective Process for PIN Diode Selection for Switch Design.
1. Determine the Preferred Type of Manufacturing for the PIN Diode in the Switch Design: Surface
Mount or Chip and Wire (Hybrid) Manufacturing.
2. Determine the Frequency of Operation and RF Power Handling of the Switch Design.
3. Use Table 1, “Relative Switch Performance and Design Evaluation Matrix” to determine the Type of
Switch Design that Best Satisfies the Particular Switch Specifications and Requirements.
4. Use Table 2, “Relative PIN Diode Performance Evaluation Matrix” to Determine the Type of PIN Di-
ode that Best Satisfies the Switch Design Selected from Table 1.
5. Use Table 3, “PIN Diode P/N Series Matrix” to Determine the PIN Diode P/N Series that Best Satis-
fies the Type of PIN Diode Selected from Table 2.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Table 1: Relative Switch Performance and Design Evaluation Matrix
Switch Design Configuration
Parameter
Insertion Loss
Series Diodes Exclusive Shunt Diodes Exclusive
Series-Shunt Diodes
Worst
Moderate
Worst
Moderate
Worst
Best
Best
VSWR
Isolation
Moderate
Moderate
Moderate
Best
Best
P1dB
Moderate
Moderate
Worst
Moderate
Input IP3
Moderate
RF Incident Power
RF Power Dissipation
Switching Speed
D.C. Power Consumption
PIN Diode Driver Design Simplicity
RF Design Simplicity
Cost
Moderate
Worst
Best
Moderate
Worst
Best
Moderate
Best (Single +5 V)
Best (+5 V Only)
Best
Moderate (+5 V, -5 V)
Moderate (+5 V, -5 V)
Worst
Worst (+5 V, -5 V)
Moderate (+5 V, -5 V)
Moderate
Best
Moderate
38 Points
Moderate
Overall Evaluation
34 Points
40 Points
Notes:
Evaluation based upon following grading : Best = 5 Points, Moderate = 3 Points, Worst = 1 Point. The higher
the score, the better the overall relative design advantage.
Where there is No significant relative advantage, a “ Moderate ” weighting can be used.
Assumptions for SP2T Design:
Design is a Reflective SP2T.
(2) Diodes are used per RF port.
Frequency Bandwidth is 3.0 : 1 maximum.
Conclusions:
The Series-Shunt Design is the Best in terms of Overall Switch Performance and value. Since each Design has
a specific advantage, the decision for a Switch Design Selection is determined by the Specific Design Priorities
for the requirement.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Table 2: Relative PIN Diode Performance Evaluation Matrix
Surface Mount Assembly
Chip & Wire Hybrid Assembly
MELF or Hi-
Key Parameter
Plastic
SURMOUNT
Cerma Chip
Flip Chip
Beam Lead
Pax
1 MHz < F < 1 GHz
100 MHz < F < 4 GHz
4 GHz < F < 20 GHz
20 GHz < F < 60 GHz
100 MHz < F < 20 GHz
Pinc < 0.1 W
Best Selection
Best Selection
Best Selection
Best Selection
Best Selection
Moderate
Best Selection
Best Selection
Best Selection
0.1 W < Pinc < 1 W
1 W < Pinc < 20 W
20 W < Pinc < 200 W
Relative Cost Index
Best Selection
Best Selection
Best Selection
Best Selection
Lowest
Lowest
Moderate/Highest Moderate/Highest
Highest
Conclusions:
1. Plastic Devices are best suited where Cost is a decision driver, the Operating Frequency < 4 GHz, and the
RF C.W. Incident Power < 1 W ( + 30 dBm ).
2. MELF or HIPAX Ceramic Devices are best utilized where Highest Average Power ( > 20 W C.W. ) is the
Primary Design Goal and the Operating Frequency < 1 GHz.
3. SURMOUNT Devices are probably the Best Overall Compromise in Device Selection. They can Operate
( In Various bands ) from 10 MHz – 20 GHz and Perform well with RF Incident Power < 20 W C.W ( + 43
dBm ).
4. Cermachip Devices provide the Best Overall Performance for Operating Frequeny ( 100 MHz – 20
GHz ) , and RF Incident Power < 200 W C.W (+ 53 dBm ).
5. Flip Chip Devices are best suited for mmwave Frequencies < 60 GHz, where the RF Incident C.W. < 1W
( + 30 dBm ) and Conductive Epoxy or Soldering is Required.
6. Beam Lead Devices are best suited for mmwave Frequencies < 60 GHz, where the RF Incident C.W. <
0.1W ( + 20 dBm ) and Thermo Compression Bonding is Required.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Table 3: PIN Diode Part Number Series Matrix
Plastic PIN
Diodes
MELF & HiPax
PIN Diodes
SURMOUNT PIN
Diodes
Cermachip PIN
Diodes
Flip Chip PIN
Diodes
Beam Lead PIN
Diodes
Part Numbers:
Part Numbers:
Part Numbers:
Part Numbers:
Part Numbers:
Part Numbers:
MA4P275 Series
MA4P282 Series
MA4P789 Series
MA4P274 Series
MA4P1250
MA4P1450
MA4SPS Series
MADP-042XXX
Series
MA4P102
MA4P202, 203
MA4P303
MA4P404
MA4P504
MA4FPC Series
MA4AGFCP Series
MA4AGSBP Series
MA4PBL Series
MA4AGBLP Series
MA4P4000 Series
MA4P4300 Series
MA4P7000 Series
MA4P7100 Series
MA4PH23X Series
MA4P505
MA4P604
MA4P606
MA4PK2000, 3000
Notes:
The following M/A-COM PIN Diode Drivers Operating with +5 V & -5 V D.C. Power Supplies are Practical
with Many PIN Diode Switch Designs: DR65 Series, MADRMA0001 and MADRMA0002 Series.
M/A-COM Website Homepage Hyperlink Address: http://www.macom.com
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Schematic 1: SP2T Series Exclusive PIN Diode Switch, 40 dB Isolation with +5 V Supply
Forward Bias Diode Voltage, ΔVf @ 10 mA ~ + 0.9 V
Reverse Bias Diode Voltage = - ( +5 V - +2.3 V ) = - 2.7 V
Schematic 1: D.C. Bias to RF Truth Table
RF State
B2 Bias
B3 Bias
Low Loss J1-J2 & Isolation J1-J3
Low Loss J1-J3 & Isolation J1-J2
+0.5 V @ 10 mA
+5 V @ 0 mA
+5 V @ 0 mA
+0.5 V @ 10 mA
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Schematic 2: SP2T All Shunt, 60 dB Isolation Design with 90° Transformer using Distributed
Transmission Line
½
θ = 90 ° = β * L = ( 2 π / λ ) * L, L = λ/4 = [ 11.807 / ( εeff * Fo * 4 ) ] inches.
½
Fo = ( Fmin * Fmax
)
is in GHz, εeff is Effective Dielectric Constant of Transmission Line Medium and Air.
Schematic 2: D.C. Bias to RF Truth Table
RF State
B2 Bias
B3 Bias
+1 V @ (+20 mA per Diode)
-V @ 0 mA
Low Loss J1-J2 & Isolation J1-J3
-V @ 0 mA
Low Loss J1-J3 & Isolation J1-J2
+1 V @ (+20 mA per Diode)
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Schematic 3: SP2T All Shunt, 30 dB Isolation Design using π, C-L-C Lumped Element 90°
Transformer
L = Zo / (2π * Fo)
C = 1 / (2π *Fo * Zo)
1/2
Fo = (Fmin* Fmax)
Schematic 3: D.C. Bias to RF Truth Table
RF State
B2 Bias
-V @ 0 mA
B3 Bias
Low Loss J1-J2 & Isolation J1-J3
Low Loss J1-J3 & Isolation J1-J2
+1 V @ +20 mA
-V @ 0 mA
+1 V @ +20 mA
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Schematic 4: SP2T Series-Shunt, 40 dB Isolation Design with Positive & Negative Bias Current
Schematic 4: D.C. Bias to RF Truth Table
RF State
B2 Bias
B3 Bias
Low Loss J1-J2 & Isolation J1-J3
Low Loss J1-J3 & Isolation J1-J2
-4 V @ 10 mA
+1 V @ +10 mA
-4 V @ -10 mA
+1 V @ +10 mA
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Schematic 5: SP2T Series-Shunt, 40 dB Isolation Design with +5 V Supply
Schematic 5: D.C. Bias to RF Truth Table
RF State
B2 Series Bias
B2 Shunt Bias
+5 V @ 0 mA
B3 Series Bias
B3 Shunt Bias
+0.5 V @ +11 mA
+5 V @ 0 mA
B0 Voltage
+1.4 V
J1-J2 Low Loss &
J1-J3 Isolation
+1.4 V @ +11 mA
(To J3 Shunt Diode)
+0.5 V @ 11 mA
J1-J3 Low Loss &
J1-J2 Isolation
+1.4 V @ +11 mA
(To J2 Shunt Diode)
+0.5 V @ +11 mA
+0.5 V @ +10 mA
+1.4 V
Notes:
1. Forward Bias Diode ∆Vf @ 10 mA ~ +0.9 V
2. Reverse Bias Series Diode = (+1.4 V - +1.4 V) = 0 V
3. Reverse Bias Shunt Diode = (+0.5 V - +5.0 V) = -4.5 V
9
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Schematic 6: TR Switch Schematic with 25 dB Isolation Design with +3 V Supply
Schematic 6: TR Switch D.C. Bias to RF Truth Table
RF State
B1 Bias
+2 V @ +10 mA
0 V @ 0 mA
Low Loss Tx - Ant & Isolation Rx - Tx
Low Loss Ant - Rx & Isolation Tx - Rx
For Lumped Electrical Transmission Line Length, θ, between Junction and Rx Shunt Diode :
½
L = Zo/ (2π Fo) , C = 1/ (2π Fo Zo) , Where Fo is the Resonant Frequency = ( F1 * F2 ) & F1 & F2 are Band Edge Frequencies.
10
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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