MA4P7461F-1072T [TE]
Non Magnetic SMQ HIPAX PIN Diode; 非磁性SMQ HIPAX PIN二极管型号: | MA4P7461F-1072T |
厂家: | TE CONNECTIVITY |
描述: | Non Magnetic SMQ HIPAX PIN Diode |
文件: | 总6页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Non Magnetic SMQ HIPAX
PIN Diode
V 2.00
Features
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Non-Magnetic Package Suitable for MRI Applications
Rectangular MELF SMQ Ceramic Package
Hermetically Sealed
Lower Rs for Lower Series Loss
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Longer t L for Lower Intermodulation Distortion
Lower Cj for Higher Series Isolation
Higher Average Incident Power Handling Capability
Description
The MA4P7461F-1072T is a surface mountable PIN diode
in a Non-Magnetic ( patent pending ) Metal Electrode
Leadless Faced (MELF) package. The device incorporates
M/A-COM’s proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or whisker
wires. The package utilizes M/A-COM’s new non-
magnetic plating process to provide an extremely low
permeability, hermetically sealed package. Incorporated in
the package is a passivated PIN diode that is full face
bonded on both the cathode and anode of the chip to
maximize surface area for lower electrical and thermal
resistance. The MA4P7461F-1072T has been
comprehensively characterized both electrically and
mechanically to ensure repeatable and predictable
performance.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high volume tape
and reel assembly. The rectangular package design provides
for highly efficient automatic pick and place assembly
techniques. The parallel flat surfaces are suitable for key
jaw or vacuum pickup techniques. All solder able surfaces
are tin plated and compatible with reflow and vapor phase
soldering methods.
Enviornmental Capability
HIPAX devices are applicable for use in industrial and
military applications and can be screened to meet the
environmental requirements of MIL-STD-750, MIL-STD-202 as
well as other military standards. The table below lists some
of the MIL-STD 750 tests the device is designed to meet.
Applications
The diodes are well suited for use in low loss, low
distortion, and high power switching circuits applicable for
high magnetic field environments from HF through UHF
frequencies. The lower thermal resistance of this device
provides excellent higher average performance at RF power
incident levels up to 100 watts CW. This device is designed
to meet the most rigorous electrical and mechanical
requirements of MRI testing environments.
MIL-STD-750
Method
Test
High Temperature Storage
Temperature Shock
HTRB
Description
+150 °C, 340 Hours
1031
1051
-65 °C to +125 °C, 20 Cycles
80% of rated VB, +150 °C, for 96 Hours
No Initial Conditioning, 85 % RH, +85° C
Dye Penetrant Visual
1038
Moisture Resistance
Gross Leak
1021
1071 Cond. E
2046
Vibration Fatigue
Solderability
20,000 G’s, 60 Hz, x, y, z axis
Test Temperature = +245 °C
2026
Non Magnetic SMQ HIPAX PIN Diode
Electrical Specifications @ +25 °C
MA4P7461F-1072T
V 2.00
Parameter
Symbol
VF
Condition
IF = +100 mA
Unit Value
1.0 VDC
Forward Voltage (Maximum)
Voltage Rating (Minimum)
Total Capacitance (Maximum)
Series Resistance (Maximum)
Parallel Resistance (Minimum)
Carrier Lifetime (Nominal)
VR
Ir = -10 uA
l -100 l VDC
1.0 pF
CT
-100 V @ 100 MHz
+100 mA @ 100 MHz
-10 V @ 100 MHz
RS
0.5 Ohms
20 K W
RP
+6 mA / -10 mA @
(50% - 90% Voltage)
6.0 us
t L
I-Region Length (Nominal)
-
mm
100 mm
C.W. Thermal Resistance
(Maximum)
IH = 1A, IL = 10 mA,
T = 1 mS
15 °C/W
q
Power Dissipation in Free Air
(Maximum)
W
IF = +100 mA
3 W
8 W
Power Dissipation with Diode
Case at Tambient (Maximum)
PD
IF = +100 mA
Absolute Maximum Ratings1 @ 25°C
Parameter
Absolute Maximum
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C Continuous
Operating Temperature
Storage Temperature
Diode Junction Temperature
Diode Mounting Temperature
RF C.W. Incident Power
Forward D.C. Current
+235 °C for 10 seconds
+ 50 dBm C.W.
+ 150 mA
l -150 V l
Reverse Voltage @ -10 uA
1. Exceeding these limits may cause permanent damage.
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Non Magnetic SMQ HIPAX PIN Diode
MA4P7461F-1072T
V 2.00
Mechanical Outline
Dimensions in Inches (mm)
Case Style
A Square
B
C
Min / Max
Min / Max
Min / Max
1072
0.080 / 0.095
0.115 / 0.135
0.008 / 0.030
(2.03 / 2.41)
(2.92/ 3.43)
(.203 / .762)
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Non Magnetic SMQ HIPAX PIN Diode
Typical Electrical Performance
MA4P7461F-1072T
V 2.00
MA4P7461F-1072T Rs vs I
1000
Rs_100 MHz
100
RS_1000 MHz
10
1
0.1
0.01
0.01
0.10
1.00
10.00
100.00
I ( mA )
MA4P7461F-1072T Rp vs Voltage
1.0E+06
Rp_100 MHz
1.0E+05
1.0E+04
1.0E+03
Rp_1500 MHz
0.01
0.10
1.00
10.00
100.00
Voltage ( V )
4
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Non Magnetic SMQ HIPAX PIN Diode
Typical Electrical Performance
MA4P7461F-1072T
V 2.00
MA4P7461F-1072T Ct vs Voltage
1.00
Ct_1500 MHz
0.10
0.10
1.00
10.00
100.00
Voltage ( V )
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Non Magnetic SMQ HIPAX PIN Diode
Typical Non-Magnetic Performance
MA4P7461F-1072T
V 2.00
Comparison of Magnetic Moment vs H Field for MA4P7461F-1072T & MA4P1250-1072T Devices
2.50E-02
2.00E-02
1.50E-02
1.00E-02
5.00E-03
0.00E+00
-5.00E-03
-1.00E-02
-1.50E-02
-2.00E-02
-2.50E-02
MA4P1250-1072T Magnetic
MA4P7461F-1072T Non-Magnetic
-1.0E+04
-8.0E+03 -6.0E+03
-4.0E+03
-2.0E+03
0.0E+00
2.0E+03
4.0E+03
6.0E+03
8.0E+03
1.0E+04
H Field ( Oersteads )
Table 1 - Typical Magnetic Properties of Non-Magnetic MA4P7461F-1072T
Device Vs. Conventional MA4P1250-1072T Magnetic Device
Magnetic Property
MA4P7461F-1072T
Value
MA4P1250-1072T
Value
Saturation Moment (EMU)
@ H = HMAX Oersteads
2.3 x E-4
4.2 x E-8
1
2.1 x E-2
7.1 x E-3
59.2
Remanance Moment (EMU)
@ H = 0Oersteads
Coercivity (Oersteads)
@ EMU = 0 Moment
6
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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