MA4PBL027 [TE]
HMICTM Silicon Beam-Lead PIN Diodes; HMICTM硅梁式引线PIN二极管
| 型号： | MA4PBL027 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HMICTM Silicon Beam-Lead PIN Diodes |
| 文件： | 总5页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
V1
Case Style ODS-1302
Features
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Beam-Lead Device
No Wirebonds Required
Cathode
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch and Impact Protection
Low Parasitic Capacitance and Inductance
Ultra Low Capacitance < 40 fF
Excellent RC Product < 0.10 pS
High Switching Cutoff Frequency > 110 GHz
110 Nanosecond Minority Carrier Lifetime
Driven by Standard +5V TTL PIN Diode Driver
A
B
D
F
Description and Applications
E
This device is a Silicon-Glass Beam-Lead PIN diode
fabricated with M/A-COM’s patented HMICTM process. This
device features one silicon pedestal embedded in a
low loss, low dispersion glass which supports the
beam-leads. The diode is formed on the top of the
pedestal, and airbridges connect the diode to the
beam-leads. The topside is fully encapsulated with
silicon nitride and has an additional polymer layer for
scratch and impact protection. These protective
coatings prevent damage to the junction and the
air-bridges during handling and assembly.
side
top
Dimension
Mils
mm
A
B
9.3 +/- 2.0
0.24 +/- 0.05
0.39 +/- 0.05
15.3 +/- 2.0
C
D
E
F
9.3 +/- 2.0
12.6 +/- 2.0
5.5 +/- 2.0
5.0 +/- 1.0
0.24 +/- 0.05
0.32 +/- 0.05
0.14 +/- 0.05
0.13 +/- 0.03
The diodes themselves exhibit low series resistance,
low capacitance, and extremely fast switching
speed.
Absolute Maximum Ratings @ TA = +25 °C
(unless otherwise specified)1
The ultra low capacitance of this device allows use
through W-band (110 GHz) applications. The low
RC product and low profile of the PIN diodes makes
it ideal for use in microwave and millimeter wave
switch designs, where lower insertion loss and
higher isolation are required. The + 10 mA ( low loss
state ) and the 0v ( isolation state ) bias of the
diodes allows the use a simple + 5V TTL gate driver.
These diodes are used as switching arrays on radar
systems, high-speed ECM circuits, optical switching
networks, instrumentation, and other wideband
multi-throw switch assemblies.
Parameter
Maximum Rating
100 mA
Forward Current
Reverse Voltage
90 V
Operating Temperature
Storage Temperature
JunctionTemperature
RF C.W. Incident Power
RF & DC Dissipated Power
Mounting Temperature
-55 °C to +125 °C
-55 °C to +150 °C
+175 °C
30 dBm C.W.
150 mW
+235°C for 10 sec.
1. Operation of this device above any one of these parameters
may cause permanent damage.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
V1
Electrical Specifications at +25 °C
Symbol
Conditions
0 V, 1 MHz2
Units
pF
Typ.
0.048
Max.
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
RS
RS
RS
RS
VF
VR
IR
-3 V, 1 MHz2
-10 V, 1 MHz2
-40 V, 1 MHz2
0 V, 100 MHz2,4
-3 V, 100 MHz2,4
-10V, 100 MHz2,4
-40V, 100 MHz2,4
0 V, 1 GHz2,4
-3 V, 1 GHz2,4
-10 V, 1 GHz2,4
-40 V, 1 GHz2,4
10 mA, 100 MHz3,4
20 mA, 100 MHz3,4
10 mA, 1 GHz3,4
20 mA, 1 GHz3,4
20 mA
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
W
0.039
0.033
0.030
0.043
0.033
0.031
0.027
0.039
0.032
0.029
0.026
3.8
0.040
0.040
3.0
W
W
W
V
3.5
2.8
0.917
110
1.1
V
-10 mA
-40 V
nA
uA
ns
1.0
IR
-90 V
-
10.0
TL
+10 mA / -6 mA
110
NOTES:
2. Total capacitance, CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar.
3. Series resistance RS is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
4. Rs and C are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with conductive silver epoxy.
T
Die Handling
Die Bonding
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. Bulk handling should insure
that abrasion and mechanical shock are minimized.
These devices were designed to be inserted onto
hard or soft substrates. Recommended methods of
attachment include thermocompression bonding, par-
allel-gap welding, and electrically conductive silver epoxy.
See Application Note M541, “Bonding and
Handling Procedures for Chip Diode Devices” for
More Detailed Assembly Instructions.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
V1
Typical Performance Curves @ +25°C
Total Capacitance Ct vs V
Total Capacitance Ct vs Freq
6.0E-14
6.0E-14
5.0E-14
4.0E-14
5.0E-14
4.0E-14
3.0E-14
2.0E-14
1.0E-14
0.0E+00
0V
5V
100MHz
3.0E-14
1GHz
40V
2.0E-14
1.0E-14
0.0E+00
0
5
10
15
20
25
30
35
40
0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9
Freq (Hz)
Bias (V)
Parallel Resistance Rp vs V
Series Resistance Rs vs F
1E+07
14
12
10
8
100MHz
1E+06
1E+05
1E+04
1E+03
1E+02
1E+01
1E+00
1mA
1GHz
6
10mA
4
2
100mA
0
0
5
10
15
20
25
30
35
40
0.0E+0 1.0E+8 2.0E+8 3.0E+8 4.0E+8 5.0E+8 6.0E+8 7.0E+8 8.0E+8 9.0E+8 1.0E+9
Freq (Hz)
Bias (V)
Series Resistance Rs vs I
Series Inductance Ls vs Freq
10
1.4E-10
100mA
1.2E-10
1.0E-10
10mA
100MHz
1GHz
8.0E-11
6.0E-11
4.0E-11
2.0E-11
1
0.0E+00
1.00E-03
1.00E-02
Bias (A)
1.00E-01
0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9
Freq (Hz)
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
V1
MA4PBL027 SPICE Model
PinDiodeModel
NLPINM1
Is=1.0E-14 A
Vi=0.0 V
Un= 900 cm^2/V-sec
Wi= 14 um
wBv= 90 V
wPmax= 150 mW
Ffe= 1.0
AllParams=
Rr= 100 K Ohms
Cjmin= 0.03 pF
Tau= 110 nsec
Rs(I)= Rc + Rj(I) = 0.05 Ohm + Rj(I)
Cj0= 0.04 pF
Vj= 0.7 V
M= 0.5
Fc= 0.5
Imax= 1.1E+5 A/m^2
Kf=0.0
Af=1.0
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
V1
MA4PBL027 Microwave Model
C parasitic = 0.08 pF
Rs
Input
Output
Ls
Cj
Notes :
C (V) = Cj (V) + Cparasitic ( Reverse Bias State )
T
Rs( I ) = Rj ( I ) + Rc ( Forward Bias State )
Rs ( V ) = Rj ( V ) = Rp ( V ) ( Reverse Bias State )
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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