MAAM-011112 [TE]

Buffer Amplifier;
MAAM-011112
型号: MAAM-011112
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Buffer Amplifier

文件: 总5页 (文件大小:587K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MAAM-011112  
Buffer Amplifier  
20 37 GHz  
Rev. V1  
Features  
Block Diagram  
Wide Bandwidth  
24 dB Gain  
20 dBm Output Power  
30 dBm IP3  
+4V Bias Supply  
Lead-Free 3 mm 16-Lead PQFN Package  
RoHS* Compliant and 260°C Reflow Compatible  
GND  
GND  
RFIN  
GND  
GND  
GND  
RFOUT  
GND  
Description  
The MAAM-011112 is a 4-stage amplifier covering  
many bands from 20 to 37 GHz with good return  
losses, high gain, and good linearity. No external  
matching components are required. This amplifier is  
internally matched to 50 ohms. The input and output  
are DC blocked.  
The MAAM-011112 primary applications include  
buffer amplifiers in LO chains and driver amplifiers in  
transmit lineups for Point-to-Point and Point-to-  
Multipoint communication systems.  
Pin Designations2  
The 3 mm PQFN package has a lead-free finish that  
is RoHS compliant and compatible with a 260ºC  
reflow temperature. The package also features low  
lead inductance and an excellent thermal path.  
Pin  
1
Function  
GND  
GND  
RFIN  
GND  
VG1  
Pin  
9
Function  
GND  
RFOUT  
GND  
GND  
VD4  
2
10  
11  
12  
13  
14  
15  
16  
3
Ordering Information1  
4
5
Part Number  
Package  
6
VG2  
VD3  
MAAM-011112-TR0500  
MAAM-011112-000000  
MAAM-011112-000SMB  
500 piece reel  
Bulk Packaging  
Sample Board  
7
VG3  
VD2  
8
VG4  
VD1  
The exposed pad centered on the package bottom must be  
connected to RF and DC ground.  
1. Reference Application Note M513 for reel size information.  
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.  
MAAM-011112  
Buffer Amplifier  
20 37 GHz  
Rev. V1  
Electrical Specifications: TA=+25°C, VDD = 4.0 V3, Z0 = 50 Ω, ID1 = 75 mA , ID2 = 35 mA,  
ID3 = 75 mA , ID4 = 150 mA  
Parameter  
Gain  
Units  
dB  
Min.  
21  
Typ.  
24  
Max.  
Input Return Loss  
dB  
8
Output Return Loss  
dB  
10  
Output P1dB  
Saturated Power  
dBm  
dBm  
dBm  
dB  
18  
20  
Output IP3  
26.5  
30  
Noise Figure  
6.5  
335  
4.0  
-0.3  
Supply Current (ID1+ID2+ID3+ID4)  
Drain Voltage (VD1,2,3,4)  
Gate Voltage (VG1,2,3,4)  
mA  
V
400  
V
3. Gate voltage must be applied prior to drain voltage. Set VG1, VG2, VG3, VG4, to 1.0V, apply VDD, then adjust VG1, VG2, VG3, VG4 to achieve  
specified current. Typical Current,335 mA = 75 (ID1) + 35 (ID2) + 75 (ID3) + 150 (ID4)  
Absolute Maximum Ratings 4,5  
Parameter  
Input Power  
Absolute Maximum  
0 dBm  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Drain Voltage  
+4.3 V  
Static Sensitivity  
Gate Voltage  
0 V  
Gallium Arsenide Integrated Circuits are sensitive  
to electrostatic discharge (ESD) and can be  
damaged by static electricity. Proper ESD control  
techniques should be used when handling these  
devices.  
Drain Current  
500 mA  
Storage Temperature  
Operating Temperature  
Junction Temperature  
-55ºC to +150ºC  
-40ºC to +85ºC  
+150ºC  
4. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
5. M/A-COM Technology does not recommend sustained  
operation near these survivability limits.  
MAAM-011112  
Buffer Amplifier  
20 37 GHz  
Rev. V1  
Typical Performance Curves  
Noise Figure  
Gain  
40  
10  
8
6
4
2
30  
20  
10  
0
0
15  
20  
25  
30  
35  
40  
15  
20  
25  
30  
35  
40  
Frequency (GHz)  
Frequency (GHz)  
Input Return Loss  
Output Return Loss  
0
0
-10  
-20  
-30  
-40  
-10  
-20  
-30  
-40  
15  
20  
25  
30  
35  
40  
15  
20  
25  
30  
35  
40  
Frequency (GHz)  
Frequency (GHz)  
P1dB  
Output IP3  
25  
35  
20  
15  
10  
5
30  
25  
20  
17.5 GHz  
24.7 GHz  
30.1 GHz  
35.0 GHz  
40.0 GHz  
15  
4
0
8
12  
16  
15  
20  
25  
30  
35  
40  
Output Power per Tone (dBm)  
Frequency (GHz)  
MAAM-011112  
Buffer Amplifier  
20 37 GHz  
Rev. V1  
App Note [1] Biasing  
As shown in the Pin Designation table, the device is operated by biasing Vd1, Vd2, Vd3 and Vd4 at 4.0 V. The  
corresponding drain currents are set to 75 mA, 35 mA, 75 mA and 150 mA respectively. It is recommended to  
use active bias on Vg1, Vg2, Vg3 and Vg4 to keep the currents in Vd1, Vd2, Vd3 and Vd4 constant, in order to  
maintain the best performance over temperature. Depending on the supply voltages available and the power  
dissipation constraints, the bias circuits may include a single transistor or a low power operational amplifier, with  
a low value resistor in series with the drain supply to sense the current. Make sure to sequence the applied  
voltage to ensure negative gate bias is available before applying the positive drain supply.  
MAAM-011112  
Buffer Amplifier  
20 37 GHz  
Rev. V1  
Lead-Free 3 mm 16-Lead PQFN†  
Reference Application Note S2083 for lead-free solder reflow recommendations.  
Meets JEDEC moisture sensitivity level 1 requirements.  
Plating is 100% matte tin plating over copper  

相关型号:

MAAM-011112_15

Buffer Amplifier
TE

MAAM-011117-001SMB

Low Power Consumption: 5 V, 85 mA.
TE

MAAM-011117-TR3000

Low Power Consumption: 5 V, 85 mA.
TE

MAAM-011117_15

Low Power Consumption: 5 V, 85 mA.
TE

MAAM-011122

Differential CATV Variable Gain Amplifier
TE

MAAM-011122_15

Differential CATV Variable Gain Amplifier
TE

MAAM-011132-000SMB

Driver Amplifier
TE

MAAM-011132-TR0500

Driver Amplifier
TE

MAAM-011132-TR1000

Driver Amplifier
TE

MAAM-011132_15

Driver Amplifier
TE

MAAM-011139

Driver Amplifier
TE

MAAM-011139-000SMB

Driver Amplifier
TE