MAAMGM0007-DIE [TE]
2.0-18.0 GHz Distributed Amp/Gain Block; 2.0-18.0 GHz的分布式放大器/增益模块
| 型号： | MAAMGM0007-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 2.0-18.0 GHz Distributed Amp/Gain Block |
| 文件： | 总6页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RO-P-DS-3084 A
2.0-18.0 GHz Distributed Amp/Gain Block
Features
MAAMGM0007-DIE
♦ 0.15 Watt Saturated Output Power Level
♦ Single Bias Operation
♦ Variable Drain Voltage (4-6V) Operation
♦ GaAs MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
ꢀPolyimide Scratch Protection
ꢀ
ꢀNo Hydrogen Poisoning Susceptibility
Description
The MAAMGM0007-Die is a single stage distributed amplifier
with single bias operation. This product is fully matched to 50
ohms on both the input and output. It can be used as a driver
stage in high power applications.
Primary Applications
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
♦ Test Equipment
♦ Electronic Warfare
♦ Radar
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, Pin = 16 dBm
Parameter
Symbol
Typical
Units
Bandwidth
2.0-18.0
GHz
f
Output Power
1-dB Compression Point
Small Signal Gain
Noise Figure
22
19
dBm
dBm
dB
POUT
P1dB
G
8
NF
6
dB
Input VSWR
VSWR
VSWR
IDD
2.0:1
2.0:1
< 250
Output VSWR
Drain Supply Current
mA
1. TB = MMIC Base Temperature
RO-P-DS-3084 A
2/6
MAAMGM0007-DIE
2.0-18.0 GHz Distributed Amp/Gain Block
Maximum Operating Conditions 2
Parameter
Absolute Maximum
Units
dBm
V
Symbol
Input Power
20.0
+8.0
PIN
Drain Supply Voltage
Junction Temperature
Storage Temperature
Die Attach Temperature
VDD
180
°C
TJ
TSTG
-55 to +150
310
°C
°C
2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Input Power
Symbol
VDD
Min
Typ
5.0
Max
6.0
Unit
V
4.0
PIN
16.0
18.0
150
dBm
°C
Junction Temperature
Thermal Resistance
TJ
58
°C/W
ΘJC
MMIC Base Temperature
TB
Note 3
°C
3. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDD
Operating Instructions
This device is static sensitive.
Please handle with care.
Specifications subject to change without notice.
2
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
3/6
MAAMGM0007-DIE
2.0-18.0 GHz Distributed Amp/Gain Block
50
45
40
35
30
25
20
15
10
5
20
16
12
8
6
SSG
Input VSWR
Output VSWR
4V
5V
6V
5
4
3
2
1
4
0
0
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Figure 1. Output Power vs. Frequency and Drain Voltage at Pin=16dBm.
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Figure 2. Small Signal Gain and Input and Output VSWR vs. Frequency at VD=5V
50
50
45
40
35
30
25
20
15
10
5
4V
5V
6V
4V
5V
6V
45
40
35
30
25
20
15
10
5
0
0
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Figure 4. 1dB Compression Point vs. Frequency and Drain Voltage.
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage.
11
12
13
14
15
16
17
18
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
4/6
MAAMGM0007-DIE
2.0-18.0 GHz Distributed Amp/Gain Block
1.0
0.8
0.6
0.4
0.2
0.0
30
2GHz
6GHz
10GHz
15GHz
18GHz
2GHz
6GHz
10GHz
15GHz
18GHz
27
24
21
18
15
12
9
6
3
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
Figure 5. Output Power vs. Input Power and Frequency at VD=5V.
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
Figure 6. RF Drain Current vs. Input Power and Frequency at VD=5V.
14
12
10
8
14
12
10
8
4V Gain
4V NF
5V Gain
5V NF
6V Gain
6V NF
6
6
4
4
2
2
0
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Figure 7. Small Signal Gain and Noise Figure vs. Frequency and Drain Voltage.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
5/6
MAAMGM0007-DIE
2.0-18.0 GHz Distributed Amp/Gain Block
Mechanical Information
Chip Size: 1.67 x 3.00 x 0.075 mm (65 x 118 x 3 mils)
1.665mm
1.558mm
VD_6 VD_7 VD_8
VD_5
GND:G
1.503mm
G N D : G
G N D : G
G N D : G
GND:G
OUT
0.907mm
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
0.367mm
IN
GND:G
0
0
Figure 8. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
Size (mils)
Size (µm)
150 x 150
150 x 150
100 x 100
100 x 100
100 x 100
RF In and Out
6 x 6
6 x 6
4 x 4
4 x 4
4 x 4
5 Volt Supply: VD_5
6 Volt Supply: VD_6
7 Volt Supply: VD_7
8 Volt Supply: VD_8
Specifications subject to change without notice.
5
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
6/6
MAAMGM0007-DIE
2.0-18.0 GHz Distributed Amp/Gain Block
VDD
0.1 µF
100 pF
VD_6
VD_7
VD_8
VD_5
GND:G
G N D : G
G N D : G
G N D : G
RFOUT
GND:G
OUT
GND:G
RFIN
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
IN
GND:G
Figure 9. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Refer to table below for bonding to achieve desired operation.
Drain Voltage to Pad Connection
Applied Voltage
(Volts)
Operational Voltage
(Volts)
5 Volt Supply: VD_5
4
5
6
4
5
6
6 Volt Supply: VD_6
7 Volt Supply: VD_7
8 Volt Supply: VD_8
6
7
8
5
5
5
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
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