MAAMSS0006 [TE]
High Dynamic Range GaAs HBT Amplifier, 50 - 450 MHz; 高动态范围的GaAs HBT放大器， 50 - 450兆赫
| 型号： | MAAMSS0006 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | High Dynamic Range GaAs HBT Amplifier, 50 - 450 MHz |
| 文件： | 总1页 (文件大小：520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Dynamic Range GaAs HBT
Amplifier, 50 - 450 MHz
V 1A.00
Advanced
Features
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Greater than 40 dBm Output IP3
Greater than 20 dBm P1dB
GaAs iHBT Technology
Chip Scale Leadless Package
Single Positive Supply Voltage
Description
M/A-COM’s MAAMSS0006 Amplifier is a high linearity
and high efficiency GaAs Heterojunction Bipolar Transistor
(HBT) MMIC in a 3mm plastic surface mount package. It
is ideal for receiver and transmission applications due to its
low noise figure and high OIP3. The MAAMSS0006 is
particularly useful in applications requiring high linearity.
Electrical Specifications: TA = 25°C, Z0 = 50W
Parameter
Gain
Test Conditions
Frequency
50 - 450 MHz
50 - 450 MHz
50 - 450 MHz
50 - 450 MHz
50 - 450 MHz
50 - 450 MHz
Units
dB
Min
—
Typ
Max
—
13
12
40
24
5
Return Loss
Output IP3
dB
—
—
dBm
dBm
V
—
—
Output P1dB
Supply Voltage
Supply Current
—
—
—
—
mA
—
100
—
3mm FQFP-N Package
This Advanced Data Sheet contains technical information about a product M/A-COM may introduce. Specifications subject to
change prior to formal introduction. All measurements in a 50 Ohm System.
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