MAAP-015024-V3 [TE]

Power Amplifier, 8 W;
MAAP-015024-V3
型号: MAAP-015024-V3
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Power Amplifier, 8 W

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MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Features  
Functional Schematic  
8 W Power Amplifier  
20 dB Small Signal Gain  
VG1 VD1  
VG2  
VD2 VG3  
VD3  
13  
3
6
9
11  
1
39 dBm Saturated Pulsed Output Power  
Dual Sided Bias Architecture  
100% On-wafer DC & RF Power Tested  
100% Visual Inspection to MIL-STD-833  
Bare Die  
14 RFOUT  
28  
RFIN  
Description  
The MAAP-015024 three stage 14.5 - 17.5 GHz  
GaAs MMIC power amplifier has a saturated pulsed  
output power of 39 dBm and a small signal gain of  
20 dB. The power amplifier must be biased directly  
on both sides of the die.  
15  
25  
19  
17  
27  
22  
This MMIC uses MACOM’s GaAs pHEMT device  
technology and is based upon optical gate  
lithography to ensure high repeatability and  
uniformity. The chip has surface passivation for  
protection and backside via holes and gold  
metallization to allow a conductive epoxy die attach  
process.  
VG1 VD1  
VG2  
VD2 VG3  
VD3  
Pad Configuration  
Pad No.  
Function  
Description  
1
VG1  
VD1  
VG2  
VD2  
VG3  
VD3  
RFOUT  
VD3  
VG3  
VD2  
VG2  
VD1  
VG1  
RFIN  
1st Stage Gate Voltage  
1st Stage Drain Voltage  
2nd Stage Gate Voltage  
2nd Stage Drain Voltage  
3rd Stage Gate Voltage  
3rd Stage Drain Voltage  
RF Output  
This device is well suited for communication and  
radar applications.  
3
6
9
11  
13  
14  
15  
17  
19  
22  
25  
27  
28  
Ordering Information  
Part Number  
Package  
Die in vacuum release gel  
pack  
MAAP-015024-DIE  
3rd Stage Drain Voltage  
3rd Stage Gate Voltage  
2nd Stage Drain Voltage  
2nd Stage Gate Voltage  
1ST Stage Drain Voltage  
1st Stage Gate Voltage  
RF Input  
Direct gate bias sample  
board  
MAAP-015024-DIEEV1  
MAAP-015024-DIEEV2  
On chip gate bias sample  
board  
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Electrical Specifications:  
Freq. = 14.5 - 17.5 GHz, TA = +25°C, Duty Cycle = 5%, PIN = 23 dBm  
Parameter  
Gain  
Units  
dB  
Min.  
Typ.  
21.0  
+/-1.0  
10.0  
6.0  
Max.  
Gain Flatness  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
dB  
dB  
dB  
dB  
50.0  
Saturated Output Power  
14.5 - 15.0 GHz  
35.0  
37.5  
37.5  
39.0  
dBm  
15.0 - 17.5 GHz  
Drain Bias Voltage  
Gate Bias Voltage  
Current  
V
V
A
8.0  
-0.9  
5.0  
7.0  
Absolute Maximum Ratings1,2  
Parameter  
Input Power  
Absolute Maximum  
+30 dBm  
-0.5 V < VG < -2 V  
+8.5 Vdc  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Gate Voltage  
Supply Voltage  
Supply Current  
7.5 A  
Static Sensitivity  
Storage Temperature  
Operating Temperature  
Junction Temperature3  
-65°C to +165°C  
-40°C to +85°C  
+175°C  
Gallium Arsenide Integrated Circuits are sensitive  
to electrostatic discharge (ESD) and can be  
damaged by static electricity. Proper ESD control  
techniques should be used when handling these  
devices.  
1. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
2. MACOM does not recommend sustained operation near  
these survivability limits.  
3. Operating at nominal conditions with TJ ≤ +175°C will ensure  
MTTF > 1 x 106 hours.  
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Schematic  
Bonding Diagram  
VD2  
VD3  
VD1  
100 pF  
100 pF  
100 pF  
RFIN  
RFOUT  
100 pF  
100 pF  
100 pF  
100 pF  
2.2 µF  
2.2 µF  
2.2 µF  
VG1  
VG2  
VD3  
VG3  
MMIC Bare Die  
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Typical Performance Curves  
Gain vs. Frequency  
Reverse Isolation vs. Frequency  
35  
0
VG= -0.9 V, VD= 6.5 V  
VG= -0.8 V, VD= 6.5 V  
VG= -0.7 V, VD= 6.5 V  
VG= -0.9 V, VD= 7.0 V  
VG= -0.8 V, VD= 7.0 V  
VG= -0.7 V, VD= 7.0 V  
VG= -0.9 V, VD= 7.5 V  
VG= -0.9 V, VD= 6.5 V  
VG= -0.8 V, VD= 6.5 V  
VG= -0.7 V, VD= 6.5 V  
VG= -0.9 V, VD= 7.0 V  
VG= -0.8 V, VD= 7.0 V  
VG= -0.7 V, VD= 7.0 V  
VG= -0.9 V, VD= 7.5 V  
VG= -0.8 V, VD= 7.5 V  
VG= -0.7 V, VD= 7.5 V  
VG= -0.9 V, VD= 8.0 V  
VG= -0.8 V, VD= 8.0 V  
VG= -0.7 V, VD= 8.0 V  
VG= -0.8 V, VD= 7.5 V  
VG= -0.7 V, VD= 7.5 V  
VG= -0.9 V, VD= 8.0 V  
VG= -0.8 V, VD= 8.0 V  
VG= -0.7 V, VD= 8.0 V  
30  
25  
20  
15  
10  
-20  
-40  
-60  
-80  
-100  
14  
15  
16  
Frequency (GHz)  
17  
18  
18  
18  
14  
15  
16  
Frequency (GHz)  
17  
18  
18  
18  
Input Return Loss vs. Frequency  
Output Return Loss vs. Frequency  
0
10  
VG= -0.9 V, VD= 6.5 V  
VG= -0.8 V, VD= 6.5 V  
VG= -0.7 V, VD= 6.5 V  
VG= -0.9 V, VD= 7.0 V  
VG= -0.8 V, VD= 7.0 V  
VG= -0.7 V, VD= 7.0 V  
VG= -0.9 V, VD= 7.5 V  
VG= -0.8 V, VD= 7.5 V  
VG= -0.7 V, VD= 7.5 V  
VG= -0.9 V, VD= 8.0 V  
VG= -0.8 V, VD= 8.0 V  
VG= -0.7 V, VD= 8.0 V  
VG= -0.9 V, VD= 6.5 V  
VG= -0.8 V, VD= 6.5 V  
VG= -0.7 V, VD= 6.5 V  
VG= -0.9 V, VD= 7.0 V  
VG= -0.8 V, VD= 7.0 V  
VG= -0.7 V, VD= 7.0 V  
VG= -0.9 V, VD= 7.5 V  
VG= -0.8 V, VD= 7.5 V  
VG= -0.7 V, VD= 7.5 V  
VG= -0.9 V, VD= 8.0 V  
VG= -0.8 V, VD= 8.0 V  
VG= -0.7 V, VD= 8.0 V  
-5  
5
-10  
-15  
-20  
-25  
0
-5  
-10  
-15  
14  
15  
16  
17  
14  
15  
16  
17  
Frequency (GHz)  
Frequency (GHz)  
Current vs. Frequency, VG = -0.9 V, VD = 8 V  
Output Power vs. Frequency, VG = -0.9 V, VD = 8 V  
50  
7
Pin = 9 dBm  
Pin = 15.6 dBm  
Pin = 16.6 dBm  
Pin = 17.6 dBm  
Pin = 18.6 dBm  
Pin = 19.7 dBm  
Pin = 20.7 dBm  
Pin = 21.6 dBm  
Pin = 22.5 dBm  
Pin = 23.3 dBm  
Pin = 24.1 dBm  
Pin = 24.7 dBm  
Pin = 25.1 dBm  
Pin = 10 dBm  
Pin = 10.9 dBm  
Pin = 11.9 dBm  
Pin = 12.8 dBm  
Pin = 13.7 dBm  
Pin = 14.7 dBm  
6
5
4
3
45  
40  
35  
30  
25  
2
1
0
Pin = 23.3 dBm  
14  
15  
16  
17  
14  
15  
16  
17  
Frequency (GHz)  
Frequency (GHz)  
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Typical Performance Curves  
Gain @ 14.5 GHz vs. Output Power  
Gain vs. Output Power  
30  
30  
14.0 GHz  
14.5 GHz  
15.0 GHz  
15.5 GHz  
16.0 GHz  
16.5 GHz  
17.0 GHz  
17.5 GHz  
18.0 GHz  
25  
20  
15  
10  
5
25  
20  
15  
+25°C  
-40°C  
+85°C  
10  
25  
30  
35  
40  
25  
30  
35  
40  
Output Power (dBm)  
Output Power (dBm)  
Gain @ 15.5 GHz vs. Output Power  
Gain @ 15.0 GHz vs. Output Power  
30  
30  
25  
20  
25  
20  
15  
15  
+25°C  
-40°C  
+85°C  
+25°C  
-40°C  
+85°C  
10  
10  
25  
30  
35  
40  
25  
30  
35  
40  
Output Power (dBm)  
Output Power (dBm)  
PAE vs. Output Power  
0.25  
14.0 GHz  
14.5 GHz  
15.0 GHz  
15.5 GHz  
16.0 GHz  
16.5 GHz  
17.0 GHz  
17.5 GHz  
18.0 GHz  
0.20  
0.15  
0.10  
0.05  
0.00  
28  
30  
32  
34  
36  
38  
40  
42  
Output Power (dBm)  
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Applications Section  
Application Notes  
Note 3 - Pulse Operation  
Note 1 - Biasing  
The performance of the MAAP-015024 is  
characterized under pulsed conditions with a pulse  
width of 5 µS and a duty cycle of 5%. The  
measurements were taken while the drain voltage  
was pulsed. It is strongly recommended to ensure  
the heat generated is dissipated from the die with  
an adequate thermal solution. If this thermal path  
is not provided this will result in reduced  
performance/lifetime and possible thermal runaway  
that will permanently damage the PA. It is not  
recommended to operate this PA in CW operation  
unless the bias is reduced.  
The MAAP-015024 is biased directly through the  
gates (VG1, VG2 and VG3) of the power amplifier  
(PA). The VG should be biased on one side of the  
PA. The VD3 must be biased on both sides of the  
PA. The VD1 and VD2 should only be biased on  
one side of the PA. The PA is biased typically with  
VG = -0.9 V and VD = 8 V.  
The bias (VG1, VG2, VG3) should always be applied  
before the drain voltage (VD1, VD2, V+3) is applied  
and when switching off the PA the drain voltage  
must be switched off first before the gate voltage.  
It is strongly recommended to pulse the drain  
voltage of the PA so the heat can be dissipated  
from the device.  
Note 2 - Bias Arrangement  
Each DC pin (VD and VG) needs to have DC bypass  
capacitance of 100 pF as close to the device as  
possible. In addition the VG must have 2.2 µF on  
the side the gate voltage is applied. It is  
recommended to also use a further capacitance of  
0.01 µF on the DC pins.  
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAAP-015024  
Power Amplifier, 8 W  
14.5 - 17.5 GHz  
Rev. V3  
Applications Section  
Handling and Assembly  
Die Attachment  
Wire Bonding  
This product is 0.075 mm (0.003") thick and has  
vias through to the backside to enable grounding to  
the circuit. Microstrip substrates should be brought  
as close to the die as possible. The mounting  
surface should be clean and flat. If using  
conductive epoxy, recommended epoxies are  
Tanaka TS3332LD, Die Mat DM6030HK or  
DM6030HK-Pt cured in a nitrogen atmosphere per  
manufacturer's cure schedule. Apply epoxy  
sparingly to avoid getting any on to the top surface  
of the die. An epoxy fillet should be visible around  
the total die periphery. For additional information  
please see the MACOM "Epoxy Specifications for  
Bare Die" application note. If eutectic mounting is  
preferred, then a flux-less gold-tin (AuSn) preform,  
approximately 0.0012 thick, placed between the die  
and the attachment surface should be used. A die  
bonder that utilizes a heated collet and provides  
scrubbing action to ensure total wetting to prevent  
Windows in the surface passivation above the bond  
pads are provided to allow wire bonding to the die's  
gold bond pads. The recommended wire bonding  
procedure uses 0.076 mm x 0.013 mm (0.003" x  
0.0005") 99.99% pure gold ribbon with 0.5-2%  
elongation to minimize RF port bond inductance.  
Gold 0.025 mm (0.001") diameter wedge or ball  
bonds are acceptable for DC Bias connections.  
Aluminium  
wire  
should  
be  
avoided.  
Thermo-compression bonding is recommended  
though thermo-sonic bonding may be used  
providing the ultrasonic content of the bond is  
minimized. Bond force, time and ultrasonic's are all  
critical parameters. Bonds should be made from  
the bond pads on the die to the package or  
substrate. All bonds should be as short as possible.  
void formation in  
a nitrogen atmosphere is  
recommended. The gold-tin eutectic (80% Au  
20% Sn) has a melting point of approximately  
280ºC (Note: Gold Germanium should be avoided).  
The work station temperature should be 310ºC +/-  
10ºC. Exposure to these extreme temperatures  
should be kept to minimum. The collet should be  
heated, and the die pre-heated to avoid excessive  
thermal shock. Avoidance of air bridges and force  
impact are critical during placement.  
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  

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