MAAPGM0030-DIE [TE]
5.0-9.0 GHz 1W Power Amplifier; 5.0-9.0 GHz的1W功率放大器
| 型号： | MAAPGM0030-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 5.0-9.0 GHz 1W Power Amplifier |
| 文件： | 总6页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RO-P-DS-3021 A
Preliminary Information
5.0-9.0 GHz 1W Power Amplifier
MAAPGM0030-DIE
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ GaAs MSAG® Process
♦ Proven Manufacturability and Reliability
ꢀNo Airbridges
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Description
The MAAPGM0030-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Primary Applications
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
♦ Multiple Band Point-to-Point Radio
♦ SatCom
♦ ISM Band
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 240 mA2, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
5.0-9.0
GHz
f
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
30
35
dBm
%
POUT
PAE
P1dB
G
29
dBm
dB
17
Input VSWR
VSWR
VSWR
IGG
1.4:1
1.8:1
< 4
Output VSWR
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
mA
mA
IDD
< 400
38
OTOI
IM3
dBm
dBm
3rd Order Intermodulation Distortion
Single Carrier Level = 20 dBm
-14
5th Order Intermodulation Distortion
IM5
-33
dBm
Single Carrier Level = 20 dBm
Noise Figure
2nd Harmonic
3rd Harmonic
NF
2f
8
dB
-20
-35
dBc
dBc
3f
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated.
RO-P-DS-3021 A 2/6
5.0-9.0 GHz 1W Power Amplifier
MAAPGM0030-DIE
Maximum Operating Conditions 3
Parameter
Absolute Maximum
Units
dBm
V
Symbol
PIN
Input Power
23.0
+12.0
-3.0
Drain Supply Voltage
VDD
Gate Supply Voltage
V
VGG
IDQ
Quiescent Drain Current (No RF, 40% Idss)
470
mA
W
3.2
Quiescent DC Power Dissipated (No RF)
Junction Temperature
PDISS
TJ
180
°C
Storage Temperature
TSTG
-55 to +150
310
°C
Die Attach Temperature
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Symbol
VDD
Min
4.0
Typ
8.0
Max
10.0
-1.5
Unit
V
Drain Supply Voltage
Gate Supply Voltage
VGG
-2.4
-2.0
V
Input Power
PIN
TJ
18.0
21.0
150
dBm
°C
Junction Temperature
Thermal Resistance
25
°C/W
Θ
JC
MMIC Base Temperature
TB
Note 4
°C
4. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust VGG to set IDQ
.
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
Specifications subject to change without notice.
2
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3021 A 3/6
5.0-9.0 GHz 1W Power Amplifier
MAAPGM0030-DIE
50
50
POUT
PAE
40
30
20
10
0
40
30
20
10
0
4
5
6
7
8
9
10
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V
and Pin = 18 dBm.
50
40
30
20
10
0
50
40
30
20
10
0
POUT
PAE
4
5
6
7
8
9
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 7 GHz.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3021 A 4/6
5.0-9.0 GHz 1W Power Amplifier
MAAPGM0030-DIE
50
VDD = 4
VDD = 8
VDD = 6
VDD = 10
40
30
20
10
0
4
5
6
7
8
9
10
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
25
20
15
10
5
6
5
4
3
2
1
GAIN
Input VSWR
Output VSWR
4
5
6
7
8
9
10
Frequency (GHz)
Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3021 A 5/6
5.0-9.0 GHz 1W Power Amplifier
MAAPGM0030-DIE
Mechanical Information
Chip Size: 2.480 x 1.98 x 0.075 mm (98 x 78 x 3 mils)
1.980 mm
VDD
0.990 mm
0.980 mm
0.126mm.
0
VGG
0
Figure 5. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
Size (mils)
4 x 8
Size (µm)
100 x 200
200 x 150
150 x 150
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
8 x 6
4 x 6
Specifications subject to change without notice.
5
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3021 A 6/6
5.0-9.0 GHz 1W Power Amplifier
MAAPGM0030-DIE
VDD
0.1 µF
100 pF
VDD
RFOUT
RFIN
VGG
100 pF
VGG
0.1 µF
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
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