MAAPSM0015 [TE]
DC-20 GHz GaAs MMIC Amplifier; DC- 20 GHz的砷化镓MMIC放大器
| 型号： | MAAPSM0015 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | DC-20 GHz GaAs MMIC Amplifier |
| 文件： | 总3页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
DC-20 GHz GaAs MMIC Amplifier
Rev. 2.0
DC-20 GHz GaAs MMIC Amplifier
Features
¢ Wide Frequency Range: DC-20 GHz
¢ On Chip Bias Network
¢ High Gain : 11 dB
¢ Gain Flatness: + 0.75 dB
¢ Typical Psat: 21 dBm
¢ Return Loss: 12 dB
2.0 mm
¢ Low Bias Current : 100mA
Description
The M/A-COM MAAPSM0015 is a medium power
wideband AGC amplifier that typically provides 11 dB
of gain with 25 dB of AGC range. The circuit topology
is a six-section traveling wave amplifier using common
source FETs which provide very wide bandwidth.
Typical input and output return loss is 12 dB. RF ports
are DC coupled, enabling the user to customize sys-
tem corner frequencies. DC bias can be provided
through the drain termination resistor without the need
for an external bias inductor. For higher power appli-
cations, an external inductor can be used to bias the
amplifier through the RFout or Vd_aux pads. Applica-
tions include OC-192 12.5 GBit/s receive AGC ampli-
fier and lithium niobate Mach-Zehnder modulator driver
amplifer.
3.0 mm
Primary Applications
¢
¢
¢
12.5GBit OC-192 LN/MZ Driver
12.4GBit OC-192 AGC Receiver
SONET/SDH
The MAAPSM0015 requires off-chip decoupling and
blocking components. Each device is 100% DC and
RF tested on wafer to ensure performance compliance.
The device is provided in chip form. M/A-Com fabri-
cates the MAAPSM0015 using a 0.5 µm gate length
low noise multi-function self aligned gate (MSAG)
MESFET process. This process features silicon nitride
passivation and polimide scratch protection. The die
thickness is 0.003”.
Electrical Characteristics
8V, 100 mA
Parameter
Bandwidth
Typ
Units
GHz
dB
DC-20
11
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
Psat (+8V, 100 mA)
Noise Figure
+ 0.75
-12
dB
dB
-12
dB
>-13
21
dB
dBm
dB
7
DC-20 GHz GaAs MMIC Amplifier
MAAPSM0015
Preliminary
DC-20GHz Carrier-Mounted Performance Vds = 8,0V, Ids = 50, 70, 100mA
0
14
12
10
8
-5
100 mA
-10
70 mA
100 mA
70 mA
-15
-20
50 mA
6
-25
-30
50 mA
4
0
5
10
15
20
0
0
5
10
15
20
Frequency (GHz)
Frequency (GHz)
-5
70 mA
-10
-15
-20
-25
-30
50 mA
100 mA
0
5
10
15
20
Frequency (GHz)
DC-20GHz Wafer Probe Data Vds = 8,0V, Ids = 100mA
10
25
bias through RFout
8
23
21
19
17
15
6
bias through Vd
4
2
0
0
5
10
15
20
0
5
10
15
20
Frequency (GHz)
Frequency (GHz)
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheetsand product information. COMPANY CONFIDENTIAL
DC-20 GHz GaAs MMIC Amplifier
MAAPSM0015
Preliminary
MAAPSM0015 Bond Pad Location
All Dimensions are in mm (inches)
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheetsand product information. COMPANY CONFIDENTIAL
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