MABC-001000-DPS00L [TE]
GaN Bias Controller/Sequencer Module;
| 型号： | MABC-001000-DPS00L |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN Bias Controller/Sequencer Module |
| 文件： | 总7页 (文件大小：937K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Features
Robust GaN Protection at Any Power Up/Power
Down Sequence
Fixed Gate with Pulsed Drain Bias Voltage. Add-
On Module Allows for Gate Pulsing
Open Drain Output Current of ≤ 200 mA for
External MOSFET Switch Drive
30 dB Typical EMI/RFI Rejection at All I/O Ports
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT
Leads
Target ≤ 500 ns Total Switch Transition Time
Low Power Dissipation < 100 mW
Gate Bias Output Current ≤ 50 mA for Heavy RF
Compression
Functional Schematic
GND GND
14 13
RoHS* Compliant and 260°C Reflow Compatible
1
2
3
4
5
GFB
NC
12 ENS
11 P4V
10 NC
-
+
-
+
Description
The MABC-001000-DPS00L is
Dissipation bias controller that provides proper gate
voltage and pulsed drain voltage biasing for a device
GCO
GCI
9
8
SWG
NC
a
Low Power
VGS
6
7
GND
NC
under test (DUT).
Applicable DUT’s include
Pin Configuration1
depletion-mode GaN (Gallium Nitride) or GaAs
(Gallium Arsenide) power amplifiers or HEMT
devices.
Pin No.
Label
Function
1
GFB
NC
Gate Voltage (-) Feedback
No Connection
The module also provides bias sequencing so that
pulsed drain voltage cannot be applied to a DUT
unless the negative gate bias voltage is present.
2,6,8,10
3
GCO
GCI
Gate Voltage (-) Control Output
Gate Voltage (-) Control Input
Gate (-) Supply Voltage
Ground
4
The applications section of this datasheet will show
how the module can be implemented for the
following two applications:
5
7,13,14
9
VGS
GND
SWG
P4V
ENS
Driver Output to MOS Switch Gate
+5 V VCC Input
Application Option 1: Fixed negative gate
biasing with pulsed drain biasing.
Application Option 2: Pulsed negative gate
biasing with pulsed drain biasing.
11
12
MOS Switch Enable TTL
1. This Configuration is for Fixed Gate Bias. Unused package
pins must be left open and not connected to ground.
Both of these application options will recommend the
external circuitry and p-Channel Power MOSFET.
Ordering Information
Part Number
Packaging
Tray
The MABC-001000-DP000L module can also be
installed onto an MABC-001000-PB2PPR evaluation
board for evaluation, test, and characterization
purposes.
MABC-001000-DPS00L
MABC-001000-DPS0TL
MABC-001000-PB2PPR
Tape & Reel2
Gate and Drain Pulsing
Evaluation Board3
2. Reference Application Note M513 for reel size information.
3. Specify eval. board configuration when ordering: Application
Option 1 or 2. See Applications Section for option details.
* Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Electrical Characteristics: TA = 25°C
Symbol
VCC
Parameter
Supply Voltage, Positive
Conditions
Min
4.3
-
Typ
5
Max
Unit
V
5.5
ICC
Supply Current, Positive
Supply Voltage, Negative
Supply Current, Negative
13
-6
-
0
-
mA
V
VGS
-8
-
IGS
-3
mA
VENL
VENH
IEN
Input Voltage, Logic 0, Pulse Enable
Input Voltage, Logic 1, Pulse Enable
Input Current, Pulse Enable
0
2
-
0
3.3
0.3
V
V
4.3
40
-
-
-
uA
V
VGTH
VDTH
Input, Gate Feedback Threshold to VGS
Input, Drain Feedback Threshold
-
2.7
-
65% SWG
V
VGC
VGCR
IGC
Output Voltage, Pulsed/Fixed Gate
Output Voltage, Pulsed/Fixed Gate Ripple
Output Gate Current, Peak
-8
-
-3.5
50
0
V
mVp-p
mA
Ω
-
-
50
-
ROFF
RON
ION
Output Drive, Open Drain, OFF State
Output Drive, Open Drain, ON State
Output Drive, Current, ON State
-
4M
1.2
100
-
-
VDS = 50 V
Temp. = +85°C
-
Ω
-
200
mA
Absolute Maximum Ratings4,5
Recommended Operating Conditions
Parameter
Absolute Maximum
Parameter
Typical
Supply (+) Voltage, VCC
Supply (-) Voltage, VGS
+4.3 V to +5.5 V
-10 V to 0 V
-0.3 V to +4.5 V
-10 V to 0 V
0 V to +60 V
-200 mA
Supply (+) Voltage, VCC
Supply (-) Voltage, VGS
+4.8 V to +5 V
-8 V to -2 V
Logic Voltage, ENS, GSE
Analog (-) Voltage, GCI, GFB
Switch Driver Voltage, SWG
Switch Driver Sink Current, SWG
Lead Soldering Temp (10 s)
Operating Temperature
Logic Voltage, ENS, GSE
Analog (-) Voltage, GCI, GFB
Switch Driver Sink Current, SWG
Operating Temperature
0 V to +4.3 V
-8 V to -2 V
-1 mA to -200 mA
-40°C to +85°C
+260°C
-40°C to +85°C
-65°C to +150°C
Storage Temperature
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Timing Characteristics: TA = 25°C
Symbol Parameter
Conditions
Min
Typ
Max
Unit
tD1
Open Drain ON Propagation Delay7
-
100
150
ns
RPULL-UP = 700 Ω
VDD = 50 V
IR = 71 mA avg.
Switch Disconnected
tD3
Open Drain OFF Propagation Delay7
Open Drain Rise Time8
-
-
-
70
116
58
100
150
100
ns
ns
ns
tRISE1
tFALL1
tD1
tD3
Open Drain Fall Time8
MOS Switch ON Propagation Delay7
MOS Switch OFF Propagation Delay7
MOS Switch Rise Time8
-
-
-
200
1100
126
-
-
-
ns
ns
ns
tRISE1
RLOAD = 1200 Ω
VDD = 50 V
ILOAD = 42 mA avg.
tFALL1
tD2
MOS Switch Fall Time8
-
-
-
-
-
820
156
148
55
-
ns
ns
ns
ns
ns
Gate Bias ON Propagation Delay7
Gate Bias OFF Propagation Delay7
Gate Bias Rise Time8
200
200
100
100
MOS CISS = 760 pF
RDS,ON = 205 mΩ
tD4
tRISE2
tFALL2
Gate Bias Fall Time8
44
7. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest.
8. Rise and fall times are measured between 10% and 90% of the steady state signal.
Timing Diagrams
EXTERNAL +5V TO
ENABLE LOGIC
+5V
Vcc
PULSE ENABLE FOR
GATE & DRAIN SWITCH
+5V
ENS
0
+50V
0
+50V
SWG
OPEN DRAIN OUTPUT
90%
10%
90%
0
9
10%
VDD (Q1)
MOSFET SWITCH OUTPUT
-3V
90%
10%
90%
10%
-8V
GCO
PULSED GATE OUTPUT
RF OUTPUT
RF
tD1
t D2
t D4
tRISE1
t
RISE2
t FALL2
t D3
t FALL1
9. Q1 refers to an external p-Channel MOSFET that pulses the drain of the DUT. See Applications Section for more information.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Applications Section
Functional Description
The MABC-001000-DPS00L GaN Bias Controller/
Sequencer Module circuitry provides proper
sequencing and generation of the gate voltage and
pulsed drain voltage for a device under test (DUT).
Reference the Product View and Pin Configuration
table on page 1. The basic functions of the circuits
within the module are described as follows:
Pin 9 (SWG) MOS Switch Driver Output
○
An N-Channel MOSFET develops the
pulsed signal (SWG) to drive the
resistive divider network for the gate of an
external p-Channel HEXFET as shown in
Figure 1 on page 5. The input signal for the
internal MOSFET is provided by the output
from the sequencing circuits.
Overhead Voltages for the Circuits within the
MABC-001000-DPS00L Module
Sequencing Circuits
○
Pin 11 (P4V) is the +5V Vcc Input that
supplies the positive voltage for the circuits
within the module.
○
A voltage comparator circuit senses if the
negative gate voltage is present as an input
on Pin 1 (GFB) - Gate Voltage (-) Feedback.
○
Pin 5 (VGS) is the Gate (-) Supply Voltage
that is also used to supply the negative
voltage for the circuits within the module.
○
A logic circuit provides the switched input
enable signal for the N-Channel MOSFET.
The following 3 signals must be at correct
levels to generate the enable logic
signal:
Negative Gate Voltage for the Device Under
Test (DUT)
Pin 12 (ENS) MOS Switch Enable TTL
Negative gate voltage (GFB) is present
P4V voltage is present.
○
A voltage follower op-amp circuit provides a
low impedance output to Pin 3 (GCO) Gate
Voltage (-) Control Output. Pin 3 (GCO)
output is connected to the gate terminal of a
DUT as shown in Figure 1 on page 5.
○
The reference voltage for the voltage
follower is provided by the Pin 4 (GCI) Gate
Voltage (-) Analog Input. This input
reference voltage is developed by an
external potentiometer/ resistive divider
circuit as shown in Figure 1 on page 5. It is
recommended to use the -8 V to -3 V
voltage that is also applied to Pin 5 (VGS).
○
Reference: The external potentiometer is
adjusted to set the gate voltage Pin 3 (GCO)
to the DUT. Alternative voltage inputs such
as a temperature compensation circuit or a
Digital-to-Analog (DAC) converter could also
be supplied to Pin 4 (GCI).
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Applications Section
Module Layout Guidelines
Application Option 1:
Reference the Product View, Pin Configuration
Table on page 1, and the Recommended Landing
Pattern on page 7.
Fixed Gate with Pulsed Drain Biasing
Figure
1
shows
a
block diagram of the
MABC-001000-DPS00L module with the
recommended external components to support this
application option. See Table 1 for component
recommendations and values.
The following recommendations should be followed
when the MABC-001000-DPS00L module is used to
bias a high-power RF device or amplifier. The input
and output locations were determined so that the
layout and signal routing could be optimized when
+5 V
+50 V
interfacing with
assembly.
a
high-power amplifier
R4
R5
1
3
R1
CSTORAGE
VR1
MABC-001000-
DPS00L
4
5
The negative gate voltage input and outputs are
located on the left side of the module and should
be located as close as possible to the gate bias
11
9
R2
R3
-8 V
6
Q1
TTL
pads
on
the
high-power
amplifier
assembly.
DUT
RFIN
RFOUT
The positive pulsed voltages are located on the
right side of the module and should be located
as close as possible to the external MOSFET
switch. The MOSFET switch drain should be
located as close as possible to the drain bias
pads on the high-power amplifier assembly. The
charge storage capacitors should be
located as close as possible to the MOSFET
switch source terminal pads.
CIN
COUT
Figure 1. Fixed Gate/Pulsed Drain Biasing
Part
Value
MFG
MFG P/N
ERJ-2GEJ272X
R1
2.7 kΩ Panasonic
R2,R3 1.02 kΩ
R4,R5 402 Ω
Vishay CRCW25121K02FKEGHP
The module ground pads are located at Pins 7,
13, and 14.
Vishay
Bourns
CRCW2512402RFKEG
3224W-1-103E
VR1
Q1
10 kΩ
Route all signal lines and ground returns to be
as short as possible and implement a ground
plane on the back of the printed wiring board
(PWB) if that option is available to the
designer. Following these layout criteria will
minimize circuit parasitics that degrade the
performance of the pulsed signal.
P-Channel
MOSFET
IR
IRF5210SPBF
Table 1. Recommended Parts List for Fixed
Gate/Pulsed Drain Biasing
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Applications Section
Application Option 2:
Pulsed Gate and Pulsed Drain Biasing
A block diagram showing a typical application of
the MABC-001000-PB2PPR sample board is
shown in Figure 2 below. Figures 3 and 4 show
layouts of the MABC-001000-PB2PPR sample
board with/without the MABC-001000-DPS00L
module installed.
The additional external circuitry on the
MABC-001000-PB2PPR
provides the added capability of pulsed gate
biasing. It is important to note that the
sample
board
Figure 3. Populated MABC-001000-PB2PPR
evaluation boards can be configured for either
Option 1 or 2. A Full schematic, assembly
layout, and Bill of Materials are available upon
request.
Evaluation Board
+50 V
TTL
-8 V
DUT
RFIN
RFOUT
VDD
P4V
TTL
-8V
+5 V
MABC-001000-
PB2PPR
VG_A VD_PULSED
VD_PULSED
VG_B
MABC-001000-
PB2PPR
P4V
VDD
+5 V
RFOUT
-8V
TTL
RFIN
DUT
-8 V
TTL
+50 V
(a)
(b)
Figure 4. MABC-001000-PB2PPR with
MABC-001000-DPS00L Mounted
Figure 2. Pulsed Gate/Pulsed Drain Biasing:
(a) North Biasing; (b) South Biasing
Multiple GaN Device Control (No RF redundancy)
IN
OUT
OUT
GaN
Typical Application Circuits
Single GaN Device Control
IN
GaN
IN
OUT
GaN
VPOT
VPOT
VTEMP
DAC
VTEMP
DAC
10
9
10
9
3
3
4
5
4
5
MABC-001000-DPS00L
MABC-001000-DPS00L
8
8
-8VDC
PWM
-8VDC
PWM
6
6
11
11
50VDC
50VDC
+5V
+5V
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABC-001000-DPS00L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
Physical Dimensions10,11,12
Recommended Landing Pattern7
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
This module is sensitive to electrostatic discharge
(ESD) and can be damaged by static electricity.
Proper ESD control techniques should be used
when handling these HBM class 1B devices.
10. All dimensions are in inches[mm].
11. Reference Application Note M538 for lead-free solder reflow
recommendations.
12. Plating is 100% Sn over BeCu.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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