MADP-011029 [TE]
3 Terminal LPF Broadband Shunt Structure;
| 型号： | MADP-011029 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 3 Terminal LPF Broadband Shunt Structure |
| 文件： | 总9页 (文件大小：1171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Features
Functional Schematic
3 Terminal LPF Broadband Shunt Structure
50 MHz - 12 GHz Broadband Frequency
>100 W Peak Power Handling
< 0.1 dB Shunt Insertion Loss
> 25 dB Shunt Isolation
< 20°C/W Thermal Resistance
Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
RoHS* Compliant and 260°C Reflow Compatible
RFOUT
RFIN
6
5
4
1
2
3
GND
GND
GND
GND
Description
7
The MADP-011029 is a lead-free 1.5 x 1.2 mm
TDFN surface mount plastic package that provides
both low and high signal frequency operation from
50 MHz to 12 GHz. The higher breakdown voltage
and lower thermal resistance of the PIN diode
provides peak power handling in excess of 100 W.
Pin Configuration3
This device is ideally suitable for usage in higher
incident power switches, phase shifters, attenuators,
and limiter microwave circuits over
frequency where higher performance surface mount
diode assemblies are required.
Pin No.
Pin Name
RFIN
Description
RF Input
Ground
a
broad
1
2
3
4
5
6
GND
GND
Ground
Ordering Information1,2
GND
Ground
Part Number
Package
GND
Ground
RFOUT
RF Output
MADP-011029-14150T
MADP-011029-000SMB
3000 piece reel
Sample board
7
Paddle4
Ground
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC, and thermal ground.
1. Reference Application Note M513 for reel size information.
2. All RF Sample boards include 5 loose parts.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Electrical Specifications: TA = +25°C
Parameter
Test Conditions
+ 50 mA DC
Units
V
Min.
0.7
—
Typ.
0.9
Max.
1.1
Forward Voltage
Reverse Leakage Current
Total Capacitance5
-200 V DC
nA
pF
Ω
|- 20|
0.31
1.5
|-1000|
0.40
1.9
-50 V @ 1 GHz
+10 mA @ 1 GHz
—
Series Resistance 6
—
Parallel Resistance6
-Vdc = -40 V, @ 100 MHz
KΩ
—
1000
—
+If = 10 mA / -Ir = -6 mA
(50% Control Voltage, 90% Output Voltage)
Minority Carrier Lifetime
µs
—
—
1.0
20
2.0
CW Thermal Resistance
( Infinite Heat Sink at Thermal
Ground Plane)
I High = 4 A, I low = 10 mA @ 10 kHz
+If = 50 mA @ 1 GHz
ºC/W
—
Power Dissipation7,8
( Infinite Heat Sink at Thermal
Ground Plane)
W
—
7.5
—
Insertion Loss
Isolation
F = 1 GHz, -Vdc = -10 V
dB
dB
—
0.1
25
—
—
F = 1 GHz, +I bias = +10 mA
23
5. Ct ( Total Capacitance ) = CJ ( Junction Capacitance ) + Cp ( Parasitic Package Capacitance ).
6. Rs and Rp are measured on an HP4291A Impedance Analyzer.
7. De-rate power dissipation linearly by -50 mW/ºC to 0 W @ +175ºC: Pd (T) = Pd (+25ºC) - ΔP = Pd (+25º) - (50 mV/ºC) (ΔT).
8. PD = ΔTj / Θ or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.
Absolute Maximum Ratings9,10
Parameter
Absolute Maximum
Handling Procedures
Please observe the following precautions to avoid
damage:
DC Forward Voltage @
+250 mA
1.2 V
DC Forward Current
DC Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
250 mA
|-400 V|
Static Sensitivity
These devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these Class 1B devices.
+175°C
-65°C to +125°C
-65°C to +150°C
9. Exceeding any one or combination of these limits may cause
permanent damage to this device.
10. MACOM does not recommend sustained operation near these
survivability limits.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
500 - 5000 MHz Parts List12
PCB Layout
Part
C1
Value
62 pF
Case Style
0402
0402
0402
0402
0402
C2, C3
FB1
R1
100 pF
470 Ω @ 1 GHz
150 Ω
L1
82 nH
12. Max DC voltage with recommended components not to
exceed 100 V.
Assembly Recommendations
PCB Schematic
Devices may be soldered using standard
Pb60/Sn40, or RoHS compliant solders. Leads are
plated NiPdAuAg to ensure an optimum solderable
connection.
For recommended Sn/Pb and RoHS soldering profile
See Application Note M538 on the MACOM website.
Cleanliness and Storage
These devices should be handled and stored in a
clean environment. Ends of the device are
NiPdAuAg plated for greater solderability. Exposure
to high humidity (>80%) for extended periods may
cause the surface to oxidize. Caution should be
taken when storing devices for long periods.
General Handling
Device can be handled with tweezers or vacuum
pickups and are suitable for use with automatic
pick-and-place equipment.
11. R1 is not needed when using the recommended ferrite FB1.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Typical 1 GHz Parametric Curves
Series Resistance vs. Forward Current
Capacitance vs. Reverse Voltage
0.40
0.35
0.30
0.25
0.20
1000
100
10
1
0.1
0.001
0
10
20
30
40
0.010
0.100
Reverse Bias (V)
Forward Bias (A)
Parallel Resistance vs. Reverse Voltage
1000000
100000
10000
0
10
20
30
40
Reverse Bias (V)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Typical RF Small Signal Performance Curves
Insertion Loss
Return Loss
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
0
-10
-20
-30
-40
-50
0 V
10 V
50 V
0 V
10 V
50 V
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Frequency (GHz)
Frequency (GHz)
Isolation
-10
-15
-20
-25
-30
10 mA
25 mA
50 mA
-35
0
2
4
6
8
10
12
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Lead-Free 1.5 x 1.2 mm 6-Lead TDFN†
NOTES:
1. REFERENCE JEDEC MO-153-AB FOR ADDITIONAL DIMENSIONAL AND
TOLERANCE INFORMATION.
2. ALL DIMENSIONS SHOWN AS INCHES/MM.
†
Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is NiPdAuAg.
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Applications Section
Schematic of High Power SP2T Shunt Switch using MADP-011029-14150T PIN Diodes
F = Octave Bandwidth from 1 to 12 GHz
Pinc = +40 dBm CW
Pinc = +50 dBm, 10 µs PW, 1% Duty
B1
B2
J0
J1
J2
Θ = 90°
Θ = 90°
Θ = 90°
Θ = 90°
½
L = 11.807 / (εeff * F * 4 ) inches, θ = β * L = ( 2 π / λ ) * L = 90°
Frequency is in GHz, εeff is Effective Dielectric Constant of Transmission Line Medium
RF State
B1 Bias
B2 Bias
J0-J1 Low Loss &
J0-J2 Isolation
-50 V @ 0 mA
+1 V @ +20 mA
J0-J2 Low Loss &
J0-J1 Isolation
+1 V @ +20 mA
-50 V @ 0 mA
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Applications Section
Schematic of 3 Stage Limiter using MADP-011029-14150T
F = 1000 - 8000 MHz
Pinc = +47 dBm CW
Pinc = +50 dBm, 10 µs P.W., 1% Duty
C1
C2
RFIN
RFOUT
D1
D3
D2
L1
Part
PN
Case Style
Description
Quantity
D1
MADP-011029-14150T
MADL-011023-14150T
MADL-011023-14150T
33 nH
ODS-1415
Input PIN Diode
1
1
1
1
1
1
D2
D3
L1
ODS-1415
ODS-1415
0402
2nd Stage PIN Diode
3rd Stage PIN Diode
RF Choke / DC Return
DC Block
C1
C2
27 pF
0402
27 pF
0402
DC Block
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MADP-011029-14150
High Power PIN Diode
50 MHz - 12 GHz
Rev. V3
Microwave Model of MADP-011029-14150T
1
2
3
1
2
Ls
Ls
Cj
Rj
Cpkg/2
Cpkg/2
3
Rj = Rs (Forward Bias Current)
Rj = Rp (Reverse Bias Voltage)
Parameter
Value
8.0E-14 F
4.0E-10 H
0.9 Ω
Cpackage
L bond = Ls
Rs
Rp
5E+5 Ω
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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