MAG-100027-050 [TE]
Next generation high power RF semiconductor technology;
| 型号： | MAG-100027-050 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Next generation high power RF semiconductor technology |
| 文件： | 总9页 (文件大小：12931K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaN RF Power Products
Next generation high power RF semiconductor technology
MACOM continues to develop industry-leading gallium nitride (GaN) RF power products. Our product portfolio
leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and
custom solutions for our radar, EW, ISM, and communications customers.
As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream
applications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting.
MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully
matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our
proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent
RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz.
MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon technology
to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factors—
including 2 W to 600 W P1db CW power transistors in ceramic and overmolded plastic DFN and TO-272 packages,
as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers
improve upon the high power and efficiency performance of LDMOS while at the at the same time providing
the high frequency performance of GaAs. Only MACOM delivers GaN performance at silicon cost structures
to drive adoption.
Why choose GaN?
GaN advantages include:
> High breakdown voltage
> Superior power density
> High RF gain and efficiency
> Multi-octave bandwidth
> High frequency operation
> Excellent thermal conductivity
> GaN performance at silicon cost structures
For over 45 years, MACOM engineers have been redefining RF power and are now applying their
GaN expertise to an array of commercial, industrial, scientific, medical and wireless applications.
Turn to MACOM for superior performance, high power GaN solutions.
LDMOS
–
MACOM GaN on Silicon
>10% Improvement
4-6 W/mm
Benefits
Power Efficiency “>2GHz”
Lower Operating Costs, Simpler Cooling
Smaller Footprint and Lower Costs
Time-to-Market and Smaller Footprint
Capacity and Surge Capability
Competitive Bill of Materials
Competitive Bill of Materials
Power Density 1-1.5 W/mm
Easy Matching difficult
Supply Chain 8"
easy
6"and 8"
Cost Silicon
Silicon
Linearity DPD friendly
DPD friendly
Support all ISM Brands Limited to 2.45 GHz Can be used at >2.45 GHz Broader Choice for Your Applications
1
RF Energy
MACOM GaN enables RF Energy applications with exceptional efficiency and gain
Features and Benefits
MACOM GaN delivers cost, bandwidth, power density, and efficiency advantages in an array of form factors:
> Higher efficiency and reliability
> Higher linearity
> Increased precision and control
> Excellent gain, low power, and lower cost structure
> Power levels from 2–1000 W
> Frequencies from 890 MHz to 2.45 GHz
> Packages from QFN to TO-272 to ceramic
Description
Radio frequency (RF) energy applications use controlled electromagnetic radiation to heat items or to power all
kinds of processes. Today, magnetron tubes commonly generate this energy. Tomorrow, it will be generated by
an all solid-state semiconductor chain.
Solid-state RF energy offers numerous benefits unavailable via alternate solutions: low-voltage drive,
semiconductor-type reliability, smaller form factor, and an “all-solid-state electronics” footprint. Perhaps its most
compelling attributes are fast frequency, phase- and power-agility complemented by hyper-precision. Collectively,
the technology’s attributes yield an unprecedented process control range, even energy distribution, and fast
adaption to changing load conditions. Ideal for applications including: automotive ignition, industrial cooking,
industrial drying, medical ablation, plasma street lighting.
Block Diagram
RF Energy Cooking System
In development
In development
I/Q
I/Q
MIXER
MIXER MODULATOR
MODULATOR
RF SYNTHESIS
RF SYNTHESIS
HPA
HPA
COOKING CAVITY
I-DAC
I-DAC
VGA
VGA
OSCILLATOR
OSCILLATOR
AMPLIFIER SWITCH
AMPLIFIER
SWITCH
Q-DAC
Q-DAC
COUPLER
COUPLER
High Power Amplifiers
MAGe-100809-600*
MAGe-100809-1K0*
MAGe-100825-002*
MAGe-100825-005*
MAGe-100825-010*
MAGe-102425-015*
MAGe-102425-030*
MAGe-102425-050*
MAGe-102425-100*
MAGe-102425-300*
High Power Amplifiers
MAGe-100809-600*
MAGe-100809-1K0*
MAGe-100825-002*
MAGe-100825-005*
MAGe-100825-010*
MAGe-102425-015*
MAGe-102425-030*
MAGe-102425-050*
MAGe-102425-100*
MAGe-102425-300*
In development
In development
In development
*
*
2
Basestation
MACOM GaN transforms the network with ease of use and cost effectiveness
Features and Benefits
> Optimized to meet the most demanding bandwidth, performance, and efficiency needs
> Multi-band system: single radio supporting > 100 MHz of bandwidth
> High frequency: enables 1.8 GHz to 6 GHz
> Compact and lightweight: higher power density with smaller package, higher efficiency with smaller heat sink
> Easy to linearize and correct with standard digital pre-distortion (DPD) systems
> CapEx savings: smaller PCBs, lower heat sink cost, single GaN device replaces multiple LDMOS devices
> OpEx Savings: high efficiency reduces utility bill
> Massive MIMO pre-5G sets new standard for integration with high efficiency and high power density
> Faster time to market: simpler devices lead to shorter development times, broadband means fewer PAs
to deal with when covering all bands, excellent applications support
Description
MACOM's new MAGb series is the industry's first commercial basestation-optimized family of GaN transistors
to achieve leadership efficiency, bandwidth and power gain with the linearity and cost structure like LDMOS,
with a path to better than LDMOS cost. Leveraging MACOM's Gen4 GaN technology, this new series enables
wireless carriers to deploy the latest LTE releases and significantly reduce operating expenses at highly competitive
price points, with robust and scalable CMOS-like supply chain combined with MACOM’s best in class applications
and design support team with decades of experience.
Block Diagram
Wireless
Access TDD
Low Noise Amplifier
MAAL-011078
Low Noise Amplifier
MAAL-010704
MAAL-011134
ADC
LNA
DSA
LNA
HIGH ISOLATION
ADC
ADC
SWITCH
SP2T, SP4T, SP5T
HIGH POWER SWITCH
(TDD ONLY)
Rx
Tx
ADC
ADC
TDD
CIRCULATOR
High Isolation Switch
MAAL-011078
MAAL-011134
PRE-
DRIVER
DSA
GaN
GaN
ADC
DRIVER
GaN Power Amplifiers
Request information
Digital Attenuator Pre-Driver
CPRI INTERFACE
POWER
AMPLIFIERS
MAATSS0015
MAATSS0017
MAAD-000523
MAAM-009286
MAAM-009560
3
ISM, Communications & Instrumentation
MACOM—the first choice for GaN in communications, multi-market and ISM applications
Features and Benefits
> Broadband, unmatched transistors can be used for a variety of applications including communications,
instrumentation and industrial, scientific and medical (ISM)
> Very rugged: allows GaN transistors to withstand high VSWR mismatches during power on/start up
and during operation without damaging the transistor
> High voltage: reduces bias current load on power supply allowing for reduced cost power supplies
> Excellent thermal performance: allows reduced heat sink costs for easier PCB designs
> High RF gain and efficiency
> MTTF of 100 year+ (channel temperature <200°C)
> Non-magnetic parts available
> EAR99 export classification
Description
As gallium nitride grows from its initial role in military and radar applications to expand into commercial
markets, MACOM is uniquely positioned to enable those demanding applications. Leveraging our GaN experience
and supply chain, MACOM satisfies many of the commercial requirements that have limited GaN penetration in
broader markets. Packaging choices range from ceramic flanged and earless, to discrete plastic, including plastic
laminate modules that enable traditional SMT PCB production techniques. The portfolio of 5-300 W devices
allows customers a wide set of options to build line-ups for their ISM applications.
Block Diagram
MRI
Driver Amplifiers
MAAM-009116
XF1001-SC
GRADIENT
GRADIENT
TIMING
X, Y, Z
AMPLIFIER x3
Receive Coil
MA44781
GRADIENT
DAC
AND
COILS
CONTROL
MADP-011048
RF Amplifiers
NPT2010
NPT2018
NPT2020
NPT2021
NPT2022
MRF137
MRF141
MRF148A
MRF150
Low Noise Amplifiers
MAAL-009120
MAAL-010200
Transmit
Receive Coil
MA4P7446F-1091T
MA4P7452F-1072T
MA4P7461F-1072T
MA4P7474F-1072T
MA4P7470F-1072T
MADP-000235-10720T
MA4P1200NM-401T
MA4P1250NM-1072T
MA4P7435NM-1091T
MA4P7441F-1091T
MADP-000504-10720T
MADP-011034-10720T
AMP
AMP
LNA
PROCESSORS
AND
RECEIVE
COIL
ADC
ADC
FILTER
DISPLAY
CONTROLS
LNA
FILTER
MRF151
MRF151G
MRF154
TRANSMIT/
RECEIVE
COIL
FREQUENCY SYNTHESIZER
MRF157
RF
DU28120T
DU28120V
DU28200M
DU2840S
DU2860T
DU2860U
DU2880T
DU2880U
AMPLIFIER
DAC
DAC
TIMING
AND
WAVEFORM
GENERATION
Transmit Coil
MA4PK2000
MA4PK2001
MA4PK2002
MA4PK2003
MA4PK2004
MA4PK3000
MA4PK3001
RF
AMPLIFIER
TRANSMIT
COIL
MA4PK3002
MA4PK3003
MA4PK3004
MA4P709-150
4
MILCOM
MACOM’s GaN solutions offer customers the flexibility in designing systems
to fit their unique requirements
Features and Benefits
> MACOM’s rich heritage in supporting MILCOM radios for the last 50-60 years is still going strong
> Extensive portfolio of RF Power Products enable the right system choices
> Proven track record of high quality and reliability
> Wideband products enable new multifunction system capability requiring complex waveforms and efficient,
economical designs
> Small size, easy to match products enable fast time-to-market
> High gain and 50 V operation provide efficient operation and significantly reduce size of matching networks
> MACOM GaN is mature technology, inexpensive, leverages readily available Si process services,
and delivers consistent quality
> Proven track record in non-obsolescence of the legacy Power MOSFET for the last 30-40 years,
helping customers to support the A&D market
Description
MACOM’s GaN portfolio of plastic power transistors afford MILCOM system designers the most cost effective
solutions across a growing range of frequency bands while not compromising performance. Supporting voltage
operation at 50 V with high gain to reduce input power requirements, the transistors maximize power and
cooling efficiency and provide robust performance. Engineered using leading edge power transistor packaging
techniques and innovative semiconductor designs, MACOM’s high power transistor products provide optimal
operation for CW and pulsed applications.
Block Diagram
Land Mobile Radio
PLL
Hybrid ICs
Buffer IC
GaAs ICs
MAAM-009116
VCO
Hybrid ICs
LNAs and GPAs
GaAs ICs
MAAL-010704
MAAL-011078
MAAL-011229
Limiter
Diode
MADL-011021
Attenuator
MAATSS0018
MAATCC0006
200 W Switch
MASW-011040
Attenuator
Diode VVAs MAADSS0016
GaAs VVAs MAAD-000523
GaAs DATs
MAAVSS0004
DRIVER
MIXER
Mixer
GaAs ICs
Diode ICs
IF AMPLIFIER
IF Amplifier
AMPLIFIER
POWER AMPLIFIERS
Power Amplifiers
MASW-011041 MRF Devices
GaN Devices
NPA1008
Driver
Amplifier
GaAs ICs
MAAM-009286
MAAP-011232
XF1001
GaAs ICs
MAAM-011206
200 W Switch
HARMONIC
FILTERING
Diode Devices
Hybrid ICs
NPA1006
NPT2021
NPT2022
NPT2024
5
RF Power Products: GaN
Multipurpose / RF Power Transistors GaN on Si: CW and Pulsed
Operating
Voltage
(V)
Output Power
Part
Number
Min Freq
(MHz)
Max Freq
(MHz)
Psat
(W)
Gain
(dB)
Efficiency
(%)
Test Freq
(MHz)
Package
NPA1006
20
1000
2000
2500
2500
2700
2700
4000
4000
4000
6000
6000
6000
6000
2700
2700
2700
28
50
50
28
28
50
28
28
28
28
50
28
28
50
50
50
12.5
100
4
14
20
17
>45
>60
>55
>50
>45
65
900
900
6 x 5 mm DFN-8
TO-272
NPT2022
1
NPT2021
1
2500
2000
1900
900
TO-272
NPA1007
30
10
14
12
6 x 5 mm DFN-8
4 x 4 mm PQFN-24
TO-272-4
NPA1008
20
1
5
NPT2024
200
25
25
25
4
22
13
13
13
9
NPT1012B
1
>50
>50
>50
>50
>50
>50
>50
65
3000
3000
3000
5800
2500
2500
2500
2700
2700
2700
AC360B-2
NPTB00025AB
NPTB00025B
MAGx-011086
NPT2018
1
AC360B-2
1
AC360B-2
1
4 x 4 mm QFN-24
6 x 3 mm PDFN-14
SOIC-8NE
1
12.5
5
17.5
17
NPTB00004A
NPTB00004D
MAGx-100027-050
1
1
5
17
SOIC-8NE
1
50
100
300
17
TO-272S-2
*
*
MAGx-100027-100
1
17
65
TO-272S-2
*
MAGx-100027-300
1
16
63
TO-272S-4
In development
*
RF Energy / RF Power Transistors GaN on Si: CW
Operating
Voltage
(V)
Output Power
Psat
Part
Number
Min Freq
(MHz)
Max Freq
(MHz)
Gain
(dB)
Efficiency
(%)
Test Freq
(MHz)
(W)
Package
MAGe-100809-600
896
896
928
50
50
50
50
50
50
50
50
50
50
600
1000
2
21
73
72
73
73
73
73
73
72
72
70
915
P-282
*
MAGe-100809-1K0
928
20
915
P-283
*
MAGe-100825-002
896
2500
2500
2500
2500
2500
2500
2500
2500
19.5
19.5
19.5
18.5
18.5
17.5
17.5
16.5
2450
2450
2450
2450
2450
2450
2450
2450
6 x 3 mm DFN-14
6 x 3 mm DFN-14
7 x 7 mm PQFN-20
7 x 7 mm PQFN-20
7 x 7 mm PQFN-20
TO-272S-2
*
MAGe-100825-005
896
5
*
MAGe-100825-010
896
10
*
MAGe-102425-015
2400
2400
2400
2400
2400
15
*
MAGe-102425-030
MAGe-102425-050
30
50
100
300
*
*
MAGe-102425-100
TO-272S-2
*
MAGe-102425-300
TO-272S-4
*
In development
*
GaN and GaAs Device Bias Sequencer
Positive
Supply
Voltage (V)
Positive
Supply Current
(mA)
Negative
Negative
Supply Current
(mA)
Output Gate
Voltage
(V)
Output
Gate Current
(mA)
Pulse Enable
TTL Voltage
(V)
Part
Number
Supply
Voltage (V)
Package
MABC-001000-DP000L
MABC-001000-DPS00L
50
50
14
14
-6
-6
-3
-3
-8 to 0
-8 to 0
50
50
3.3
3.3
SMJ2307
SMJ2307
6
GaN Package Guide
Package Type: Ceramic Air Cavity
Package Type: Plastic Packages
AC-200B-2
AC-200S-2
AC-360S-2
SOT89-3LD
SOIC-EP
AC-360B-2
3 x 6 mm PDFN-14LD
4 mm PQFN-24LD
AC-400S-2
AC-650B-4
5 x 6 mm PDFN-8LD
7 mm PQFN-20LD
TO-272-2
TO-272-4
AC-780B-2
AC-780B-4
AC-780S-2
AC-780S-4
TO-272S-2
TO-272S-2B
TO-272S-4
AC-1230B-4
AC-1230S-4
7
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