MAGX-000035-01500P_技术文档

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Features

Functional Schematic

 GaN on SiC D-Mode Transistor Technology

 Unmatched, Ideal for Pulsed Applications

 50 V Typical Bias, Class AB

 Common-Source Configuration

 Thermally-Enhanced 3 x 6 mm 14-Lead DFN

 MTTF = 600 years (T_J< 200°C)

 Halogen-Free “Green” Mold Compound

 RoHS* Compliant and 260°C Reflow Compatible

 MSL-1

Description

The MAGX-000035-01500P is a GaN on SiC

unmatched power device offering the widest RF

frequency capability, most reliable high voltage

operation, lowest overall power transistor size, cost

and weight in a “TRUE SMT”^TMplastic-packaging

technology.

Use of an internal stress buffer technology allows

reliable operation at junction temperatures up to

200°C. The small package size and excellent RF

performance make it an ideal replacement for costly

flanged or metal-backed module components.

Pin Configuration²

Pin No.

Function

No Connection

V_GG/RF_IN

Pin No.

Function

1

2

3

4

5

6

7

8

No Connection

V_DD/RF_OUT

Ordering Information¹

9

Part Number

Package

10

11

12

13

14

15

V_GG/RF_IN

MAGX-000035-01500P

MAGX-000035-PB1PPR

Bulk Packaging

Sample Board

V_GG/RF_IN

No Connection

Paddle³

No Connection

1. Reference Application Note M513 for reel size information.

2. M/A-COM Technology Solutions recommends connecting

unused package pins to ground.

3. The exposed pad centered on the package bottom must be

connected to RF and DC ground.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

1

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Typical Performance⁴: V_DD= 50 V, I_DQ= 35 mA, T_A= 25°C

Parameter

Gain

30 MHz

25

1 GHz

23

2.5 GHz

17

3.5 GHz

14

Units

dB

Saturated Power (P_SAT

Power Gain at P_SAT

PAE @ P_SAT

)

18

16.5

18

15

14

W

22

14

11

dB

75

68

60

55

%

4. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on

page 4.

Electrical Specifications: Freq. = 1.6 GHz, T_A= 25°C, V_DD= +50 V, Z₀= 50 Ω

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

RF FUNCTIONAL TESTS

CW Output Power (P2.5 dB)

V_DD= 36 V, I_DQ= 35 mA

V_DD= 50 V, I_DQ= 35 mA

P_OUT

-

7

-

W

Pulsed Output Power (P2.5 dB)

1 ms and 10% Duty Cycle

12.5

17

Pulsed Power Gain (P2.5 dB)

Pulsed Drain Efficiency (P2.5 dB)

Load Mismatch Stability (P2.5 dB)

Load Mismatch Tolerance (P2.5 dB)

G_P

17

55

-

19.5

65

-

dB

%

-

V

_DD= 50 V, I_DQ= 35 mA

η_D

V_DD= 50 V, I_DQ= 35 mA

VSWR-S

VSWR-T

5:1

-

10:1

-

Electrical Characteristics: T_A= 25°C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

DC CHARACTERISTICS

Drain-Source Leakage Current

Gate Threshold Voltage

V_GS= -8 V, V_DS= 175 V

_DS= 5 V, I_D= 2 mA

_DS= 5 V, I_D= 500 mA

I_DS

V_{GS (th)}

G_M

-

-3

-

1.0

-2

-

mA

V

-5

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

V

0.35

S

V_DS= 0 V, V_GS= -8 V, F = 1 MHz

C_ISS

C_OSS

C_RSS

-

4.2

1.8

0.2

-

pF

Output Capacitance

V

_DS= 50 V, V_GS= -8 V, F = 1 MHz

Reverse Transfer Capacitance

V_DS= 50 V, V_GS= -8 V, F = 1 MHz

2

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Absolute Maximum Ratings ^5,6,7,8,9

Parameter

Absolute Max.

Input Power

Drain Supply Voltage, V_DD

Gate Supply Voltage, V_GG

Supply Current, I_DD

P_OUT- G_P+ 2.5 dBm

+65 V

-8 V to 0 V

800 mA

Power Dissipation, CW @ 85ºC

Power Dissipation (P_AVG), Pulsed @ 85°C

Junction Temperature¹⁰

13 W

17 W

200°C

Operating Temperature

-40°C to +95°C

-65°C to +150°C

Storage Temperature

5. Exceeding any one or combination of these limits may cause permanent damage to this device.

6. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits.

7. For saturated performance it is recommended that the sum of (3 * V_DD+ abs (V_GG)) < 175 V.

8. CW operation at V_DDvoltages above 36 V is not recommended.

9. Operating at nominal conditions with T_J≤ 200°C will ensure MTTF > 1 x 10⁶hours. Junction temperature

directly affects device MTTF and should be kept as low as possible to maximize lifetime.

10. Junction Temperature (T_J) = T_C+ Ө_JC* ((V * I) - (P_OUT- P_IN))

Typical CW thermal resistance (Ө_JC) = 15.7°C/W

a) For T_C= 83°C,

T_J= 200°C @ 36 V, 398 mA, P_OUT= 7.2 W, P_IN= 0.22 W

Typical transient thermal resistances:

b) 300 µs pulse, 10% duty cycle, Ө_JC= 5.33°C/W

For T_C= 83°C,

T_J= 170°C @ 50 V, 603 mA, P_OUT= 14.3 W, P_IN= 0.41 W

c) 1 ms pulse, 10% duty cycle, Ө_JC= 5.85°C/W

For T_C= 83°C,

T_J= 172°C @ 50 V, 576 mA, P_OUT= 14.0 W, P_IN= 0.41 W

d) 1 ms pulse, 20% duty cycle, Ө_JC= 6.81°C/W

For T_C= 83°C,

T_J= 186°C @ 50 V, 570 mA, P_OUT= 13.8 W, P_IN= 0.41 W

3

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Evaluation Board Details and Recommended Tuning Solutions

Parts measured on evaluation board (8-mils thick

RO4003C). Electrical and thermal ground is

provided using copper-filled via hole array (not

pictured), and evaluation board is mounted to a

metal plate.

Matching is provided using lumped elements as

shown at left. Recommended tuning solutions for 3

frequency ranges are detailed in the parts list

below.

Bias Sequencing

Turning the device ON

1. Set V_Gto the pinch-off (V_P), typically -5 V.

2. Turn on V_Dto nominal voltage (50 V).

3. Increase V_GSuntil the I_DScurrent is reached.

4. Apply RF power to desired level.

Turning the device OFF

1. Turn the RF power off.

2. Decrease V_Gdown to V_P.

3. Decrease V_Ddown to 0 V.

4. Turn off V_G.

Parts List (N/A = not applicable for this tuning solution)

Part

Frequency = 1.6 GHz

Frequency = 2.2 - 2.5 GHz

Frequency = 2.6 - 3.6 GHz

C1

C2

C3

C4

C5

C6

C7

C8

C9

C10

C11

C12

C13

R1

R2

R3

L1

0402 27 pF, ±5%, 200 V, ATC

0603, 5.6 pF, ±0.1 pF, 250 V, ATC

0603, 18 pF, ±10%, 250 V, ATC

0805, 1000 pF, 100 V, 5%, AVX

0505, 2.2 pF, ±5%, 250 V, ATC (Vertical)

N/A

0402 18 pF, ±5%, 200 V, ATC

0402, 2.2 pF, ±0.1pF, 200 V, ATC

N/A

0402 18 pF, ±5%, 200 V, ATC

0402, 1.2 pF, ±0.1 pF, 200 V, ATC

N/A

0805, 1000 pF, 100 V, 5%, AVX

0603, 0.8 pF, ±0.1 pF, 250 V, ATC

0603, 1.5 pF, ±0.1 pF, 250 V, ATC

0402 18 pF, ±5%, 200 V, ATC

0402 10 pF, ±5%, 200 V, ATC

0805, 1000 pF, 100 V, 5%, AVX

1210, 1 µF, 100 V, 20%, ATC

0402, 3.9 pF, ±0.1 pF, 200 V, ATC

N/A

0805, 1000 pF, 100 V, 5%, AVX

N/A

0402, 1.0 pF, ±0.1 pF, 200 V, ATC

0402 18 pF, ±5%, 200 V, ATC

N/A

0505, 36 pF, ±5%, 250 V, ATC (Vertical)

0505, 18 pF, ±5%, 250 V, ATC

0805, 1000 pF, 100 V, 5%, AVX

1210, 1 µF, 100 V, 20%, ATC

N/A

0805, 1000pF, 100V, 5%, AVX

1210, 1 µF, 100 V, 20%, ATC

0402, 2.0 pF, ±0.1 pF, 200 V, ATC

0402 10 pF, ±5%, 200 V, ATC

100 Ω, 0603, 5%

N/A

12 Ω, 0603, 5%

200 Ω, 0603, 5%

1.2 Ω, 0603, 5%

1.0 Ω, 0603, 5%

1.2 Ω, 0603, 5%

9.1 Ω, 0603, 5%

0603 HP, 5.1 nH, 5%

0603 HP, 24 nH, 5%

N/A

0402, 0.8 nH,10%

Shorting tab

L2

0603, 1.8 nH, 10%

Shorting tab

L3

N/A

0603, 10nH, 10%

4

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Lead-Free 3x6 mm 14-Lead DFN^†

†

Reference Application Note S2083 for lead-free solder reflow recommendations.

Meets JEDEC moisture sensitivity level 1 requirements.

Plating is Ni/Pd/Au.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Nitride Devices and Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

Class 1B devices.

5

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Applications Section

S-Parameter Data: T_A= 25°C, V_DD= +50 V, I_DQ= 35 mA

MAGX00035_01500P_50

Swp Max

6GHz

3.698 GHz

r 0.0486879

x 0.177179

S(1,1)

MAGX00035_015000P_50

S(2,2)

MAGX00035_015000P_50

3.703 GHz

r 0.105546

x -0.304886

2.699 GHz

r 0.0493891

x 0.031524

1.304 GHz

r 0.421823

x -1.10236

2.699 GHz

r 0.156665

x -0.525263

1.296 GHz

r 0.0528072

x -0.265641

Swp Min

0.03GHz

S p ar G ra p h 2

4 0

3 0

2 0

1 0

0

DB (|S (2,1)|)

M A G X 000 35_015 000P _50

DB (G M ax())

M A G X 000 35_015 000P _50

DB (M S G ())

M A G X 000 35_015 000P _50

-1 0

0 .0 3

2 .0 3

4 .0 3

6

F re q u e n c y (G H z )

6

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Applications Section

Thermal Performance: Freq. = 1.6 GHz, T_C= 85°C, V_DD= +50 V, I_DQ= 25 mA, Z₀= 50 Ω

Power (Output & Dissipated) vs. Transient Junction Temperature, Pulse Duration and Duty Cycle

18

17

16

15

14

13

12

220

200

180

160

140

120

100

Max. Transient Junction Temp.

Power Dissipation

1.6 GHz Power Output

Pulse Width (µs), Duty Cycle (%)

Pulse Width,

Duty Cycle

100 µs,

10%

100 µs,

20%

300 µs,

10%

300 µs,

20%

500 µs,

10%

500 µs, 1000 µs, 1000 µs, 8000 µs,

20%

15.1

13.9

10%

15.2

14

20%

15.1

13.8

9.2%

16.5

13.3

Power Dissipation (W)

1.6 GHz P_OUT(W)

15.6

14.5

15.1

14.4

16.3

14.3

15.9

14

15.2

14.4

Max. Transient

Junction Temp. (°C)

131.9

148.3

169.6

185.9

165.1

180.2

172

185.9

182

Junction temperature measured using High-Speed Transient (HST) temperature detection microscopy.

7

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Applications Section

Typical Performance Curves (reference 1.6 GHz parts list):

1.6 GHz, 1 ms Pulse, 10% Duty Cycle, V_DD= +50 V, T_A= 25°C, Z₀= 50 Ω

Output Power vs. Input Power

Gain vs. Input Power

26

20

Idq = 80 mA

Idq = 35 mA

Idq = 80 mA

Idq = 35 mA

24

22

20

18

16

12

8

4

0

16

10

15

20

25

10

15

20

25

Input Power (dBm)

PAE vs. Input Power

70

60

50

40

30

Idq = 80 mA

Idq = 35 mA

20

10

15

20

25

Input Power (dBm)

8

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Applications Section

Pulsed OIP3 data

Pulse width 8.28 ms, Duty cycle 9%

V_DD= 50 V, I_DQ= 70 mA, Freq = 1.62 GHz, 1 MHz spacing on tones

P_IN

P_OUTper tone

(dBm)

OIP3

(dBm)

8

31.1

32.0

32.9

33.7

34.5

46

47

50

47

9

10

11

12

Typical Performance Curves (reference 2.2 - 2.5 GHz parts list):

2.2 - 2.5 GHz, CW, V_DD= 28 V, I_DQ= 35 mA, T_A= 25°C, Z₀= 50 Ω

Output Power vs. Input Power

Gain vs. Input Power

16

40

38

36

34

32

30

28

14

12

2.2 GHz

2.3 GHz

2.4 GHz

2.5 GHz

2.2 GHz

2.3 GHz

2.4 GHz

2.5 GHz

10

8

15 16 17 18 19 20 21 22 23 24 25 26 27 28

Input Power (dBm)

15 16 17 18 19 20 21 22 23 24 25 26 27 28

Input Power (dBm)

9

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000035-01500P

GaN Wideband 15 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V2

Applications Section

Typical Performance Curves (reference 2.6 - 3.6 GHz parts list):

2.6 - 3.6 GHz, 3 ms Pulse, 10% Duty Cycle, V_DD= 50 V, I_DQ= 35 mA, T_A= 25°C, Z₀= 50 Ω

Gain vs. Frequency

P_SATvs. Frequency

18

24

16

14

12

10

8

22

20

18

16

14

2.6

2.8

3.0

3.2

3.4

3.6

2.6

2.8

3.0

3.2

3.4

3.6

Frequency (GHz)

PAE vs. Frequency

Small Signal Gain vs. Frequency

18

70

16

14

12

10

8

65

60

55

50

45

2.6

2.8

3.0

3.2

3.4

3.6

2.6

2.8

3.0

3.2

3.4

3.6

Frequency (GHz)

10

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298


型号：	MAGX-000035-01500P
厂家：	TE CONNECTIVITY
描述：	GaN on SiC D-Mode Transistor Technology Common-Source Configuration 氮化镓对SiC D模式晶体管技术共源配置晶体晶体管
文件：	总10页 (文件大小：303K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MAGX-000035-01500P [TE]

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